FTK4828 - 회사 홈페이지(www.firstsilicon.co.kr)

SEMICONDUCTOR
FTK4828
TECHNICAL DATA
Dual N-Channel MOSFET
DESCRIPTION
The FTK4828 uses advanced trench
te chnology to provide excellent
RDS(ON) and low gate charge.
This device is suitable for use as a load switch
or in PWM applications.
N-channel N-channel
Schematic diagram
D2 D2 D1 D1
8
7
6
5
Q4828
1
FEATURES
2
3
4
S2 G2 S1 G1
VDS (V) = 60V
ID = 4.5A (VGS = 10V)
RDS(ON) < 56mΩ (VGS = 10V)
RDS(ON) < 77mΩ (VGS = 4.5V)
Marking and pin Assignment
SOP-8
top view
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Units
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current (t ≤10s) (note 1)
ID
4.5
A
Pulsed Drain Current (note 2)
IDM
20
A
Power Dissipation
PD
1.25
W
RθJA
100
℃/W
IAR,IAS
19
A
EAR,EAS
18
mJ
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~ 150
℃
Thermal Resistance from Junction to Ambient (t ≤10s) (note 1)
Avalanche Current (note 2)
Repetitive Avalenche Energy 0.1mH (note 2)
2013. 03. 15
Revision No : 0
1/4
FTK4828
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR)DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =60V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±20V, VDS = 0V
Gate threshold voltage (note 3)
VGS( h)
VDS =VGS, ID =250µA
Drain-source on-resistance (note 3)
RDS(on)
60
V
1
µA
±100
nA
3
V
VGS =10V, ID =4.5A
56
mΩ
VGS =4.5V, ID =3A
77
mΩ
Forward tranconductance (note 3)
gFS
VDS =5V, ID =4.5A
Diode forward voltage (note 3)
VSD
IS=1A, VGS = 0V
1
S
6
1
V
540
pF
DYNAMIC PARAMETERS (note 4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
60
pF
Crss
25
pF
td(on)
4.7
ns
VDS =30V,VGS =0V,f =1MHz
SWITCHING PARAMETERS (note 4)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
VGS=10V,VDS=30V,
2.3
ns
td(off)
RL=6.7Ω,RGEN=3Ω
15.7
ns
1.9
ns
tf
Total Gate Charge (10V)
Qg
Total Gate Charge (4.5V)
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS =30V,VGS =10V,ID =4.5A
10.5
nC
5.5
nC
1.6
nC
2.2
nC
Notes :
1. The value in any given application depends on the user’s specific board design.
2. Repetitive rating : Pulse width limited by junction temperature.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.
4. These parameters have no way to verify.
2013. 03. 15
Revision No : 0
2/4
FTK4828
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Output Characteristics
Transfer Characteristics
20
20
Pulsed
V GS= 10V
V GS= 5.0V
V DS= 5V
V GS= 4.5V
DRAIN CURRENT
DRAIN CURRENT
15
ID
(A)
15
ID
(A)
Pulsed
10
V GS= 4.0V
5
10
T a=100℃
T a=25℃
5
V GS= 3.5V
0
0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
1
2
3
GATE TO SOURCE VOLTAGE
T a=25℃
Pulsed
Pulsed
(mΩ)
T a=25℃
V GS
5
(V)
150
RDS(ON)
150
4
RDS(ON) —— ID
200
ON-RESISTANCE
RDS(ON)
ON-RESISTANCE
0
(V)
RDS(ON) —— VGS
200
(mΩ)
V DS
5
100
ID= 4.5A
50
0
V GS= 4.5V
100
V GS= 10V
50
0
2
4
6
8
GATE TO SOURCE VOLTAGE
V GS
10
0
5
15
ID
20
(A)
IS —— VSD
Threshold Voltage
2.2
10
DRAIN CURRENT
(V)
20
T a=25℃
(A)
IS
1
2.0
SOURCE CURRENT
THRESHOLD VOLTAGE
Pulsed
2.1
V TH
(V)
10
ID= 250uA
1.9
0.1
1.8
1.7
25
50
75
AMBIENT TEMPERATURE
2013. 03. 15
100
Ta
(℃ )
Revision No : 0
125
0.01
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
1.0
V SD
1.2
(V)
3/4
FTK4828
SOP-8 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
NOTES：
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
2013. 03. 15
Revision No : 0
4/4

Download Report