SEMICONDUCTOR FTK4828 TECHNICAL DATA Dual N-Channel MOSFET DESCRIPTION The FTK4828 uses advanced trench te chnology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. N-channel N-channel Schematic diagram D2 D2 D1 D1 8 7 6 5 Q4828 1 FEATURES 2 3 4 S2 G2 S1 G1 VDS (V) = 60V ID = 4.5A (VGS = 10V) RDS(ON) < 56mΩ (VGS = 10V) RDS(ON) < 77mΩ (VGS = 4.5V) Marking and pin Assignment SOP-8 top view Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (t ≤10s) (note 1) ID 4.5 A Pulsed Drain Current (note 2) IDM 20 A Power Dissipation PD 1.25 W RθJA 100 ℃/W IAR,IAS 19 A EAR,EAS 18 mJ Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ 150 ℃ Thermal Resistance from Junction to Ambient (t ≤10s) (note 1) Avalanche Current (note 2) Repetitive Avalenche Energy 0.1mH (note 2) 2013. 03. 15 Revision No : 0 1/4 FTK4828 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =60V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V Gate threshold voltage (note 3) VGS( h) VDS =VGS, ID =250µA Drain-source on-resistance (note 3) RDS(on) 60 V 1 µA ±100 nA 3 V VGS =10V, ID =4.5A 56 mΩ VGS =4.5V, ID =3A 77 mΩ Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A Diode forward voltage (note 3) VSD IS=1A, VGS = 0V 1 S 6 1 V 540 pF DYNAMIC PARAMETERS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 60 pF Crss 25 pF td(on) 4.7 ns VDS =30V,VGS =0V,f =1MHz SWITCHING PARAMETERS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr VGS=10V,VDS=30V, 2.3 ns td(off) RL=6.7Ω,RGEN=3Ω 15.7 ns 1.9 ns tf Total Gate Charge (10V) Qg Total Gate Charge (4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =30V,VGS =10V,ID =4.5A 10.5 nC 5.5 nC 1.6 nC 2.2 nC Notes : 1. The value in any given application depends on the user’s specific board design. 2. Repetitive rating : Pulse width limited by junction temperature. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. 4. These parameters have no way to verify. 2013. 03. 15 Revision No : 0 2/4 FTK4828 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Output Characteristics Transfer Characteristics 20 20 Pulsed V GS= 10V V GS= 5.0V V DS= 5V V GS= 4.5V DRAIN CURRENT DRAIN CURRENT 15 ID (A) 15 ID (A) Pulsed 10 V GS= 4.0V 5 10 T a=100℃ T a=25℃ 5 V GS= 3.5V 0 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE 1 2 3 GATE TO SOURCE VOLTAGE T a=25℃ Pulsed Pulsed (mΩ) T a=25℃ V GS 5 (V) 150 RDS(ON) 150 4 RDS(ON) —— ID 200 ON-RESISTANCE RDS(ON) ON-RESISTANCE 0 (V) RDS(ON) —— VGS 200 (mΩ) V DS 5 100 ID= 4.5A 50 0 V GS= 4.5V 100 V GS= 10V 50 0 2 4 6 8 GATE TO SOURCE VOLTAGE V GS 10 0 5 15 ID 20 (A) IS —— VSD Threshold Voltage 2.2 10 DRAIN CURRENT (V) 20 T a=25℃ (A) IS 1 2.0 SOURCE CURRENT THRESHOLD VOLTAGE Pulsed 2.1 V TH (V) 10 ID= 250uA 1.9 0.1 1.8 1.7 25 50 75 AMBIENT TEMPERATURE 2013. 03. 15 100 Ta (℃ ) Revision No : 0 125 0.01 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE 1.0 V SD 1.2 (V) 3/4 FTK4828 SOP-8 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) NOTES: 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. 2013. 03. 15 Revision No : 0 4/4
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