MBB600TV6A

6in1 IGBT Module
Spec.No.IGBT-SP-10011-R5 (P1/8)
MBB600TV6A
Silicon N-channel IGBT
1. FEATURES
* High speed, low loss IGBT module.
* Low thermal impedance due to direct liquid cooling.
* High reliability, high durability module.
o
2. ABSOLUTE MAXIMUM RATINGS (Tc=25 C )
Item
Symbol
Unit
Specification
VCES
VGES
IC
ICp
IF
IFM
Tjmax
V
V
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Forward Current
DC
1ms
DC
1ms
Maximum Junction Temperature
Temperature under switching
conditions
Storage Temperature
Isolation Voltage
Terminals (M6)
Screw Torque
Mounting (M5)
o
C
650
20
600
1200
600
1200
175
Tjop
o
C
-40 ~ +150
Tstg
VISO
-
o
C
VRMS
-40 ~ +125
2,500 (AC 1 minute)
6.0
4.0
A
A
N·m
(1)
(2)
Notes: Recommended Value (1)5.5±0.5N·m (2)3.5±0.5N·m
3. ELECTRICAL CHARACTERISTICS
Item
Symbol
Unit
Min.
Typ.
Max.
I CES
IGES
mA
nA
Collector Emitter Saturation Voltage
VCE(sat)
V
Gate Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn On Time
Switching Times
Fall Time
Turn Off Time
VGE(TO)
Cies
tr
ton
tf
toff
V
nF
VF
V
trr
Eon(full)
Eoff(full)
Err(full)
s
mJ/P
mJ/P
mJ/P
R
kΩ
1.3
6.0
1.1
-
1.65
1.9
6.7
53
0.15
0.50
0.35
1.20
1.45
1.5
0.35
20
45
15
5
0.16
1.0
±500
2.1
7.5
0.4
0.9
0.8
2.0
1.8
0.8
30
65
23
-
mA
-
-
0.1
K /W
K /W
-
-
Collector Emitter Cut-Off Current
Gate Emitter Leakage Current
Peak Forward Voltage Drop
Reverse Recovery Time
Turn On Loss
Turn Off Loss
Reverse Recovery Loss
Thermistor Resistance
Leakage Current between Thermistor
and Other Terminals
IGBT
Rth(j-w)
Thermal Resistance
FWD
Rth(j-w)
s
Test Conditions
o
Vce=650V, Vge=0V, Tj=25 C
o
Vge=20V, Vce=0V, Tj=25 C
o
Ic=600A, Vge=15V, Tj=25 C
o
Ic=600A, Vge=15V, Tj=150 C
o
Vce=5V, Ic=600mA, Tj=25 C
o
Vce=10V, Vge=0V, f=100kHz, Tj=25 C
Vcc=300V, Ic=600A
Ls=30nH , R(ext)=4.7Ω, Cge=56nF
o
Vge=+15V/0V, Tj=150 C
Inductive load
o
If=600A, VGE=0V, Tj=25 C
o
If=600A, VGE=0V, Tj=150 C
VCC=300V, Ic=600A,
Ls=30nH, Rg(ext)=4.7Ω, Cge=56nF
o
Vge=+15V/0V, Tj=150 C
Inductive load
o
Tc=25 C
o
Tc=150 C
V=600Vp
0.145 Junction to water/fin, 10l/min, 50%LLC
0.21 (per 1 arm)
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
6in1 IGBT Module
Spec.No.IGBT-SP-10011-R5 (P2/8)
MBB600TV6A
4. PACKAGE OUTLINE DRAWING
Unit in mm
Weight : 900g
6in1 IGBT Module
Spec.No.IGBT-SP-10011-R5 (P3/8)
MBB600TV6A
5. CIRCUIT DIAGRAM
Thermistor T1, T2 and T3 are located on the
same ceramic substrate with the IGBT and
diode chips of phase U, V and W, respectively.
Note: This temperature measurement is not
suitable for the short circuit or short term overload detection and should be used only for the
module protection against long term overload or
malfunction of the cooling system.
6. PRODUCT LABEL
7. DEFINITION OF THE SYMBOLS
6in1 IGBT Module
Spec.No.IGBT-SP-10011-R5 (P4/8)
MBB600TV6A
8. STATIC CHARACTERISTICS
TYPICAL
VGE=15V14V13V12V
1200
TYPICAL
VGE=15V14V13V
1200
Tj=150℃
Tj=25℃
12V
Voltage sence:
CS* -E* (*:1～6)
1000
Voltage sence:
CS* -E* (*:1～6)
1000
10V
400
コレクタ電流 IC(A)
600
11V
800
Collector Current
800
Collector Current
コレクタ電流 IC(A)
11V
600
10V
400
9V
9V
200
200
0
0
0
2
4
6
8
0
10
8
コレクタ・エミッタ間電圧 VCE(V)
Collector to Emitter Voltage
10
Collector Current vs. Collector to Emitter Voltage
TYPICAL
TYPICAL
12
Tj=150℃
Tj=25℃
Voltage sence:
CS* -E* (*:1～6)
Voltage sence:
CS* -E* (*:1～6)
8
6
4
Ic=1200A
2
Collector to Emitter Voltage
10
コレクタ・エミッタ間電圧 VCE(V)
Collector to Emitter Voltage
6
Collector to Emitter Voltage
12
コレクタ・エミッタ間電圧 VCE(V)
4
コレクタ・エミッタ間電圧 VCE(V)
Collector Current vs. Collector to Emitter Voltage
10
2
8
6
4
Ic=1200A
2
Ic=600A
Ic=600A
0
0
0
5
10
15
20
0
5
10
15
ゲート・エミッタ間電圧 VGE(V)
ゲート・エミッタ間電圧 VGE(V)
Gate to Emitter Voltage
Gate to Emitter Voltage
Collector to Emitter Voltage vs. Gate to Emitter Voltage
20
Collector to Emitter Voltage vs. Gate to Emitter Voltage
6in1 IGBT Module
Spec.No.IGBT-SP-10011-R5 (P5/8)
MBB600TV6A
TYPICAL
Vcc=300V
Ic=600A
Tj=25℃
VGE=0
Tj=25℃
Tj=150℃
1000
Voltage sence:
CS* -E* (*:1～6)
15
順電流 IF(A)
10
Forward Current
800
Gate to Emitter Voltage
ゲート・エミッタ間電圧 VGE(V)
TYPICAL
1200
20
600
400
5
200
0
0
0
2000
1000
0
1
2
ゲート電荷 QG(nC)
3
4
5
順電圧 VF(V)
Forward Voltage
Gate Charge
Gate Charge Characteristics
Forward Voltage of Free-Wheeling Diode
9. DYNAMIC CHARACTERISTICS
TYPICAL
2.5
VCC=300V
VGE=+15V/0V
Rgon/RGoff=4.7Ω
Cge=56nF
Tj=150℃
Ls≒30nH
Inductive Load
VCC=300V
VGE=+15V/0V
Cge=56nF
IC=600A
Tj=150℃
Ls≒30nH
Inductive Load
2
1.5
1
tf
toff
1.5
Switting Time
t (μS)
2
スイッチング時間 t(μS)
toff
スイッチング時間
Switching Time
TYPICAL
2.5
ton
1
tr
trr
0.5
0.5
ton
trr
tf
tr
0
0
0
100
200
300
400
500
コレクタ電流 IC(A)
Collector Current
Switching Time vs. Collector Current
600
700
0
5
10
ゲート抵抗 RG(Ω)
Gate Resistance
15
Switching Time vs. Gate Resistance
20
6in1 IGBT Module
Spec.No.IGBT-SP-10011-R5 (P6/8)
MBB600TV6A
TYPICAL
TYPICAL
Eoff
Voltage sense；
CS* - E* (*：1～6)
30
Eon
20
Err
10
Eon
VCC＝300V
VGE＝ +15/0V
IC＝ 600A
Cge=56nF
Tj＝150℃
Ls≒30nH
Inductive Load
100
80
Voltage sense；
CS* - E* (*：1～6)
60
Eoff
Switching Loss
40
スイッチング損失 Eon,Eoff,Err(mJ/pulse)
120
VCC＝300V
VGE＝+15/0V
RG＝4.7Ω
Cge=56nF
Tj＝150℃
Ls≒30nH
Inductive Load
50
Switching Loss
スイッチング損失 Eon,Eoff,Err(mJ/pulse)
60
40
20
Err
0
0
0
100
200
300
400
500
600
0
700
5
Voltage sence:
CS* - E* (*:1～6）
10l/min(LLC50%)
過渡熱抵抗 Rth(j-w)(K/W)
Transient Thermal Impeadance
VGE＝+15V/0V
Tj≦150℃
1000
IC(A)
20
1
10000
コレクタ電流
15
Switching Loss vs. Gate Resistance
Switching Loss vs. Collector Current
Collector Current
10
ゲート抵抗 RG(Ω)
Gate Resistance
コレクタ電流 IC(A)
Collector Current
100
10
1
0
100
200
300
400
500
600
700
コレクタ・エミッタ間電圧 VCE(V)
Collector to Emitter Voltage
Reverse Bias Safe Operation Area (RBSOA)
800
Diode
0.1
IGBT
0.01
0.001
0.001
0.01
0.1
時間 t(s)
Time
1
Transient Thermal Impedance Characteristics
10
6in1 IGBT Module
Spec.No.IGBT-SP-10011-R5 (P7/8)
MBB600TV6A
1600
Voltage sence:
CS* - E* (*:1～6）
VGE=+15/0V
Tj≦150℃
1400
逆回復電流 IR(A)
Reverse Recovery Current
1200
1000
800
600
400
200
0
0
100
200
300
400
500
600
700
800
コレクタ・エミッタ間電圧 VCE(V)
Collector to Emitter Voltage
Reverse Recovery Safe Operation Area (RRSOA)
10. THERMISTOR
B value
3375K±2％（25～50℃）
Operating temperature range
‐50～150℃
Thermal time constant（in still air)
Approx. 10 sec.
10
For reference(Data from manufacturer)
1
0.1
120
100
80
60
温度 (℃)
Temperature
Resistance vs. Temperature
40
20
0
抵抗値 (kΩ)
Resistance
Table1 Specifications of Thermistor(For reference)
Nominal zero-power resistance
5kΩ ±3％（25℃）
6in1 IGBT Module
Spec.No.IGBT-SP-10011-R5 (P8/8)
MBB600TV6A
HITACHI POWER SEMICONDUCTORS
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-related medical
equipment, fuel control equipment and various kinds of safety equipment), safety should
be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department
staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi Power Semiconductor Device, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part,
without the expressed written permission of Hitachi Power Semiconductor Device, Ltd.
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
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