A Novel Self-Calibration Scheme for 12-bit 50MS/s SAR ADC In-Seok Jung Yong-Bin Kim Department of Electrical and Computer Engineering Northeastern University Boston, United States [email protected] Department of Electrical and Computer Engineering Northeastern University Boston, United States [email protected] Abstract— This paper presents a low-power 12-bit 50MS/s successive approximation register (SAR) analog-to-digital converter (ADC) using single input condition for Built-In Self Test (BIST) that uses a novel self-calibration scheme to reduce both offset voltage of a comparator and capacitor mismatch of the DAC. The proposed self-calibration scheme changes the offset voltage of the comparator continuously for every step to decide onebit code. The changed offset voltage of the comparator is able to cancel not only inherent offset voltage of the comparator but also the mismatch of DAC. Consequently, the total mismatch error of both the comparator and capacitor of DAC can be reduced. Compared to the converters that use the conventional procedure, INL and DNL are reduced by about 47% and 52%, respectively. The prototype was designed using 0.13μm single poly 6 metal standard CMOS technology. The ADC achieves a SNDR of 65.6 dB and consumes 4.62 mW. The ADC core occupies an active area of only 240μm×298μm Using 1.2V supply and the sampling rate of 50 MS/s,. margin and doubled input range. However, in order to generate differential input from single-ended input, the balun is required for suitable input frequency range and this component is not only hard to be integrated but also has high cost. Therefore, it makes more sense to use single-ended input ADC for on-chip BIST hardware implementation. However, in general, it is not easy to design the high resolution ADC using single-ended input because of the inherent drawbacks of single-ended input such as noise issues. Among single-ended ADCs, pipe-line ADC type has been used in the conventional BIST algorithm implementation. However, successive approximation (SAR) analog-to-digital converter(ADC) is being magnified for mid-range sampling speed(50∼100Mhz) recently [4] because SAR ADC is more suitable than pipe-line ADC for BIST system due to its lower power consumption and less area overhead comparing to the inherited specification of pipe-line ADC. Although SAR ADCs are used in many different applications and has good advantages such as low power and small die area compared other ADCs using other architecture such as pipeline, there are several drawbacks such as the mismatch of capacitor array for charge-redistribution and offset voltage of comparator of ADC. In order to overcome those problems, a single-ended input SAR ADC using a novel self-calibration method is proposed in this paper. In more detail, this paper presents a SAR ADC design in 130nm CMOS process that uses a chargeredistribution DAC to achieve a high resolution and low power consumption. The proposed ADC exploits offset control technique for the comparator to reduce the capacitor matching issue of the metal-insulator-metal(MIM) capacitors in nanoscale CMOS technologies to obtain 12-bit resolution while dissipating low power. The power consumption of the SAR control logic circuit is further reduced by highly optimizing the the control logic using asynchronous circuits. The offset controller measures the comparator offset during each bit conversion period and store the offset code into register one time, and the effective input voltage of the comparator for each conversion period is adjusted continuously with the offset code stored in the register. The remainder of this paper is organized as follows. Section I. I NTRODUCTION With technology scaling, the cost for test and measurement is becoming a dominant factor for integrated circuits because test cost remains the same even if the unit chip cost decreases with the decrease of the minimum feature size. In particular, test cost of communication components including RF circuits is more expensive because they should test more specifications such as linearity, IMD3, and S parameters. One of the solutions for these problem is to employ Built-In-Self-Test(BIST). By integrating BIST with the circuits, the increased yield and reduced test cost can be accomplished [1]. The BIST methodology in [2] uses FFT , ADC, and control circuit that connects the feedback loop between the output of FFT and the monotonic capacitor array [2], [3]. The ADC is used to convert the analog output of the Device-UnderTest(DUT) to digital signal, and then the converted digital value as ADC output is observed through FFT. To get the useful output value of the FFT, either FFT having high the number of FFT point or High resolution ADC is needed. The BIST methodology used in [2] is one-chip solution that includes ADC in the chip to convert the output of DUT directly, which means that the ADC should be single-ended input. It is well known that differential input in ADC has several advantages compared to single-ended input such as high noise 978-1-4799-4132-2/14/$31.00 ©2014 IEEE 5 σ(Δβ) Aβ =√ β W ·L II introduces the mismatch factors of SAR ADC using chargeredistribution DAC, and Section III describes the proposed SAR ADC using self calibration method. The simulated results including post layout simulation are discussed in Section IV to prove the proposed design, followed by the conclusion in Section V. where, ΔVt is the threshold voltage deferences, current factor differences Δβ (β = μCox W/L [8]), W is the transistor gate-width and L the transistor gate-length, and the proportionality constants AV t and Aβ are technology-dependent. The effect of the mismatch become serious with scaling process. The matching of the minimal size device degrades with scaling. This is an important concern for the design of circuits since the device mismatch starts affecting the noise margin [9] and mismatch mitigation techniques cannot be widely applied due to their large area overhead [7]. Obviously, according to equation (3), the transistor size need to be increased by factor of 4 in order to reduce the offset by 2 times. This calculation shows that the sizing is not practical due to the excessive area and power consumption cost. However offset calibration is necessary to efficiently achieve good accuracy. The basic idea for the calibration is to deliberately introduce some imbalance to compensate for the offset. Such imbalance can be either by capacitance loading [10] or current injection [11], or even voltage difference [12]. To calibrate the offset voltage, the differential inputs of the comparator are usually tied together to a certain common mode voltage, which should be the same as that when the comparator is in real operation, and the comparator output is monitored and fed back to the state machine to control the imbalance. II. D EVICE MISMATCH ANAYSIS OF SAR ADC Two main mismatch errors in SAR ADC are capacitor mismatch error of the DAC and offset error of the comparator. A. DAC mismatch The conversion linearity of the SAR ADC is subject to circuit components’ non-idealities. In case of charge redistribution SAR ADC, when matching is accurate, the SAR ADC performs an ideal binary search to convert the sampled analog input into an N-bit binary code. The mismatch of capacitor is composed of global and local effects. The edge effect and the oxide effect of the capacitor are other two variables in different point of view. The relationship is given by the equation (1). ΔC = Kle C −3/2 + Kge C −1 + Klo C −1 + Kgo (1) C Where the Kle is the local edge effect factor, Kge is the global edge effect factor, Klo is the local oxide effect factor, and Kgo is the global oxide effect [5]. When capacitor mismatch is present, the ADC transfer curve is highly distorted, especially when small capacitors are used for fast settling and to reduce power consumption. As a result, the decision levels may no longer be uniformly distributed over the full input range. The relationship between capacitor mismatch error δ and the resolution of N-bit charge redistribution SAR ADC is given by equation (2) [6]. √ 1 + δ + 1 + 2δ − 3δ 2 Nmax = log2 ( ) (2) 2δ When the technology is definite, the capacitor mismatch error δ is fixed, and the maximum value of capacitor array N can be calculated by equation (2). III. P ROPOSED SELF - CALIBRATION METHODOLOGY Figure 1 shows an example of 4-bit SAR ADC operation to get digital output codes and their SAR architecture, where the VDAC signal in Figure 1(a) is shown. In the case of time period for second MSB decision and LSB decision, the errors can be occurred by mismatch errors in this particular case. In addition, the value of mismatch errors in the second time period, e(a) and e(b) should be same. The proposed self calibration method adjust the input refereed offset voltage of the comparator in figure 1(b) for each conversion period. In the first step called M OD1, the offset controller in Figure 2 measure the offset voltage of the comparator, then adjust the 8 capacitor arrays of Figure 2. The digital code to adjust offset voltage of the comparator is stored in 8-bit register. For 12-bit SAR ADC, 12 registers with 8-bit word-line are required. After all of the 12 codes are saved, the offset controller changes the offset voltage of the comparator continuously by using the stored code in the registers. More details about getting the code to adjust the offset voltage of the comparator are as follows. Firstly, the Vin is set up to Vref /2 as reference voltage, i.e., 0.6V. At the same time, DAC sets up its output voltage at the Vref /2 using the capacitor array and charge redistribution algorithm, This voltage is not going to be exactly Vref /2 because there is a mismatch error. Therefore, reference voltage is different from DAC output voltage as much as mismatch error. The comparator offset controller finds the error code for the capacitor arrays B. Offset mismatch An ADC offset is a random additive error typically resulting from the comparator offset. In a single-channel ADC, the offset error creates a DC tone and the comparator is usually designed to have input-referred noise less than 1 LSB. With low power supply voltage, 1 LSB should be less than V ref /2N bit. For example, 1 LSB is 244.14 μV in the 12-bit SAR ADC using 1V Vref . The input referred offset of the comparator used in the ADC will possibly degrade the overall ADC performance, so it is better to be minimized. Such offset is primarily function of threshold mismatch, current factor mismatch, and transistor dimension as below [7] AV t σ(ΔVt ) = √ W ·L (4) (3) 6 Can be a error (V) Sampling Can be a error SHA VIN Input referred offset error Sampled input 2NC 2C C C e(a) Vref/2 Mismatch error of DAC SAR Logic Offset Controller VREF 8bit Register X12 Cap-DAC DAC Driver e(b) Time (t) Fig. 2. The proposed SAR ADC structure (a) A example of 4-bit SAR ADC operation VIN 6$5 /RJLF SHA OO error DAC &DSDFLWLYH'$& &RPS SAR Logic 2IIVHW &RQWUROOHU 6+ (b) A example of SAR ADC architecture OO Fig. 1. A example of 4-bit SAR ADC operation (a) and SAR ADC architecture (b) Fig. 3. that minimize the mismatch error by changing the number of connected capacitor arrays. To avoid a high-frequency clock generator and a pulse width modulator (PWM) for SAR logic, the proposed ADC uses an asynchronous control circuit to internally generate the necessary clock signals and to reduce switching power consumption. The generated clock signal is used for the comparator and SAR logic. However, for M OD1 operation, the SAR ADC uses input sampling clock frequency because M OD1 process does not have to be run fast. In the proposed design, the sampling frequency is 50MHz and the comparator is operated by the same clock during M OD1 operation. For normal operation, the SAR logic does not support the offset controller and it bypasses the output of the comparator to DAC driver. However, SAR needs to support both offset controller and DAC during M OD1. The eight capacitor arrays connected to the comparator are used to adjust the effective input voltage of the comparator by compensating the offset voltage. The offset controller and 8-bit registers are synthesized using digital standard cell library supported by the process foundry company. The layout of the proposed ADC 0.058 mm2 . The switches for capacitors are placed close to the capacitor arrays to reduce any parasitic components. The logic control circuit has been optimized for power consumption and area using asynchronous logic, and the layout of the digital logic circuit is more compact. The input signal capacitance for sample and Hold Amplifier (S/H) and total capacitance of capacitive DAC are 1.05 pF and 20.24 pF, respectively. The size of the synthesized offset controller including registers is 0.0081 mm2 , and the area overhead of the proposed method is 12 %. The summarized overall performance of the proposed ADC is shown in Table I. The proposed ADC achieves an ENOB of 11.04 bit and SNDR of 65.6 dB for 25 MHz input frequency. At 50 MS/s, the average power consumption including the output buffers and the offset controller is 4.62 mW. Compared to the ADC operation without the offset controller, the power increased consumption is 23%. However, the power consumption of the offset controller will be decreased further with process scaling. The simulated static performance for differential nonlinearity (DNL) and integral nonlinearity (INL) of the proposed ADC are shown in figure 4. The peak DNL values are between -0.82 to 0.75 LSB and the peak INL values are -1.42 to 1.05 LSB. Figure 5 shows the dynamic performance of the proposed ADC with the data of simulated SNDR and SFDR vs. input frequency of 50MS/s. When the input frequency is 1 MHz, IV. S IMULATION RESULT The proposed work is designed in a 130nm standard CMOS process for fabrication. Figure 3 shows the layout and floorplan of the core part. The occupied total area including powerring of the ADC is 0.072 mm2 , with the ADC core taking only 7 the ADC has peak SNDR and SFDR of 65.6 dB and 75.1 dB, respectively. TABLE I &0. .5$ +0. .5$ P ERFORMANCE SUMMARY OF THE PROPOSED SAR ADC V. C ONCLUSION Specifications This work Process Resolution Total area Active area Supply Input range Sampling rate DNL / INL (LSB) ENOB SNDR SFDR Power 130 nm 12 b 0.0715 mm2 0.0582 mm2 1.2 V 0.4 - 1.2 V 50 MS/s -0.82∼0.75 / -1.42∼1.05 11.04 @ Fin = 25 MHz 65.6 dB 75.1 dB 4.62 mW A 12-bit 50 MS/s SAR ADC using a novel self-calibration method has been presented in this paper. The proposed method and the proposed offset controller to compensate the offset voltage of the dynamic comparator have also been presented. The proposed method diminishes both mismatch error of the DAC and offset error of the comparator, thus the linearity of the ADC can be increased by 52% with 23% overhead compared to the conventional ADC. Consequently, ENOB is increased by 1.6 in spite of the use of single endedinput SAR ADC. The prototype ADC using 130nm standard CMOS process shows the SNDR of 65.6dB for 25 MHz input frequency and consumes 4.62 mW with output buffer. The proposed ADC will be a good reference to overcome the presumed limit of the resolution of SAR based ADC using single-ended input. R EFERENCES [1] D. Han, S. Bhattacharya, and A. Chatterjee, “Low-cost parametric test and diagnosis of rf systems using multi-tone response envelope detection,” Computers & Digital Techniques, IET, vol. 1, no. 3, pp. 170–179, 2007. [2] H. Chauhan, Y. Choi, M. Onabajo, I.-S. Jung, and Y.-B. Kim, “Accurate and efficient on-chip spectral analysis for built-in testing and calibration approaches,” Very Large Scale Integration (VLSI) Systems, IEEE Transactions on, vol. PP, no. 99, pp. 1–1, 2013. [3] D. Han, B. S. Kim, and A. Chatterjee, “Dsp-driven self-tuning of rf circuits for process-induced performance variability,” Very Large Scale Integration (VLSI) Systems, IEEE Transactions on, vol. 18, no. 2, pp. 305–314, 2010. [4] C.-C. Liu, S.-J. Chang, G.-Y. Huang, and Y.-Z. Lin, “A 10-bit 50-ms/s sar adc with a monotonic capacitor switching procedure,” Solid-State Circuits, IEEE Journal of, vol. 45, no. 4, pp. 731–740, 2010. [5] J.-B. Shyu, G. Temes, and F. Krummenacher, “Random error effects in matched mos capacitors and current sources,” Solid-State Circuits, IEEE Journal of, vol. 19, no. 6, pp. 948–956, 1984. [6] Z. Lin, H. Yang, L. Zhong, J. Sun, and S. Xia, “Modeling of capacitor array mismatch effect in embedded cmos cr sar adc,” in ASIC, 2005. ASICON 2005. 6th International Conference On, vol. 2, 2005, pp. 982– 986. [7] P. Kinget, “Device mismatch and tradeoffs in the design of analog circuits,” Solid-State Circuits, IEEE Journal of, vol. 40, no. 6, pp. 1212– 1224, 2005. [8] Y. Tsividis and C. McAndrew, Operation and Modeling of the MOS Transistor. Oxford University Press New York, 1999, vol. 2. [9] M. Pelgrom, H. Tuinhout, and M. Vertregt, “Transistor matching in analog cmos applications,” in Electron Devices Meeting, 1998. IEDM ’98. Technical Digest., International, 1998, pp. 915–918. [10] M.-J. Lee, W. Dally, and P. Chiang, “Low-power area-efficient highspeed i/o circuit techniques,” Solid-State Circuits, IEEE Journal of, vol. 35, no. 11, pp. 1591–1599, 2000. [11] K. Hu, T. Jiang, J. Wang, F. O’Mahony, and P. Chiang, “A 0.6 mw/gb/s, 6.4-7.2 gb/s serial link receiver using local injection-locked ring oscillators in 90 nm cmos,” Solid-State Circuits, IEEE Journal of, vol. 45, no. 4, pp. 899–908, 2010. [12] Z. Cao, S. Yan, and Y. Li, “A 32 mw 1.25 gs/s 6b 2b/step sar adc in 0.13 μm cmos,” Solid-State Circuits, IEEE Journal of, vol. 44, no. 3, pp. 862–873, 2009. %QFG Fig. 4. Simulated INL and DNL at 64MS/s Fig. 5. Simulated SNDR and SFDR performance versus input frequency at 64MS/s 8
© Copyright 2024 ExpyDoc