th 11 Sept 2014 1. Substrate Manufacture Activity Introduction and workshop opening Current Status of 100mm Semi-Insulating SiC substrates grown by HTCVD Progress on manufacturing of Semi-Insulating SiC substrates by Physical Vapour Transport Progress in Highly Resistive Crystals Grown by Ammonothermal Method Coffee Break Presenter Session Chairs B. Magnusson, Norstel M. Vogel, SiCrystal T Martin, IQE A Barnes, ESA Parasitic Effects of Buffer Design on Static- and Dynamic- Parameters of AlGaN/GaN High Electron Mobility Transistors AlGaN/GaN HEMTs with Carbon Doped GaN Buffer Layer D. Bisi, University of Padova 11:00 Manga: Manufacturable GaN: SiC Substrates and GaN epi Wafers Supply Chain M. Mikkula, IAF 11:20 European GaN –on- SiC and GaN-on-Si Epitaxial Wafers for Electronics M. Germain, EpiGaN 11:40 The Development of GaN Electronic Device Epitaxy at IQE Europe Lunch T. Martin, IQE p-Channel GaN HFETs for Application in Harsh Environments Evaluation of AlN/GaN/AlGaN Double Heterostructure on SiC Substrate for High Power Millimeter Wave Applications GaN Microwave and High Power Switching Devices: Status and Perspectives at FBH H. Hahn, University of Aachen F Medjoub, IEMN 08:45 09:00 09:20 09:40 2. Epitaxy and materials 10:00 to 10:20 10:20 10:40 3. Devices 12:00 to 13:00 13:00 13:20 13:40 M. Zajac, Ammono 14:10 Large-area GaN-on-Si HFET 600 V Power Devices for Highly-efficient, Fast-switching Converter Applications Status and perspectives on high voltage (>1.7kV) SiC rectifiers P. Waltereit, IAF Fabrication and Performance of Microwave Diamond Devices for Space Applications Coffee Break E. Limiti, University of Rome Tor Vergata N. Allyon, ESA 16:10 Characterization of 0.25um and 0.5um AlGaN/GaN HEMT Devices for High Power Switching Applications 50W High Efficiency GaN L-band SSPA Output Section C-band GaN single-chip front-end MMIC 16:30 Magnus: Mid-project Status Report P. Dueme, Thales 16:50 R. Quay, IAF 17:30 Advanced GaN/(In)AlGaN MMICs for Applications in Space from K-band to W-band Frequencies 0.15µm InAlN/GaN HEMTs on SiC Technology for K and Ka-Bands Applications Drinks and poster exhibition 19:15 Depart for evening dinner 15:10 to 15:30 15:30 15:50 17:10 F Vitobello, ESA H Blanck, UMS J. Wuerfl, FBH Break 14:50 W Scheidler (tbc), EDA J Wuerfl, FBH P. Gamarra, TRT 14:00 to 14:10 14:30 4. Circuits PRELIMINARY PROGRAM P. Godignon, CNM J. Lhortolary, TAS(Fr) M. Van Heijningen, TNO S. Piotrowicz, III-V Lab E Limiti, Rome University. J-L Roux, CNES POSTERS PRELIMINARY PROGRAM TITLE 1. Thorough Study of the Evolution of the Microstructure of Thick GaN Crystals for Homoepitaxial Processing of GaN Devices 2. Excitation Power Dependent Photoluminescence Spectroscopy of InAlN/AlGaN Quantum Wells on Sapphire Substrate 3. Nearly perfect crystalline quality of GaN high electron mobility transistor structure grown on native GaN substrate 4. Investigation of ZnO (ALE) / GaN (MOCVD) Heterostructures for Advanced Wide Bandgap Semiconductor Cold Cathodes 5. Hot-wall MOCVD Grown High-quality GaN HEMT Structure: bottom-to-top Optimization 6. MOCVD Growth of Epitaxial BGaN Layers 7. Comparison of InAlN and AlGaN High Electron Mobility Transistors for High Temperature Space Applications 8. Fibre-coupled Light Emitting Diodes with Peak Emission at 250nm 9. Performance of AlGaN/GaN HEMTs of Varying Sizes on Silicon, Sapphire and SiC Substrates 10. 0.25 Ω-mm Ohmic Contacts to AlN/GaN HEMT Structure with in-situ SiN Passivation 11. Investigation of Charge Redistribution with Substrate Biases in AlGaN/GaN HEMTs 12. AlGaN-based UV LEDs Emitting at Wavelengths Below 250 nm 13. Towards highly positive and scalable threshold voltage in normally-off III-N HEMTs 14. Energy Gap Fluctuations Induced by Random Alloy Disorder in InGaN/GaN Nanostructures 15. GaN/Si Acoustic Devices Towards Sensing Applications 16. Time-domain Waveform Measurements Under Large Signal RF Overdrive Stress in HEMT Technology 17. Critical Failure Mechanism of 0.25µm AlGaN/GaN Technology at Very High Stress HTOL AUTHOR E. Meissner, IAF S Norouzian-Alam, MTSL Tyndall E. Janzen, Linkoping University O Kim-Hak, CNES E. Janzen, Linkoping University T. Malinauskas, Vilinius University M. Smith, MTSL Tyndall M. Akhter, MTSL Tyndall A. Al-Khalidi, Glasgow University A. Al-Khalidi, Glasgow University M. Caesar, Bristol University S. Einfeldt, FBH J. Kuzmik, Slovak Academy M. Auf der Maur, University of Rome Tor Vergata A. Stefanescu, IMT Bucharest A. Benvegnu, Xlim Labs D. Carisetti, TRT PRELIMINARY PROGRAM th 12 Sept 2014 5. Reliability Activity 08:45 09:00 09:20 09:40 10:00 10:20 to 10:40 5. Assembly + Packaging 10:40 Self-consistent Electro-thermo-mechanical Simulation of Strain in Nitride HEMTs 11:00 11:20 GREAT Metal-Diamond Composites: High Thermal Conductive Composites with Tailored Coefficient of Thermal Expansion Future GaN need for power switching packaging and assembly 11:40 6. Demonstrators and System Needs Welcome + Day 1 resume Simple Technique for Failure Modes Detection on High-performances Space Designed GaN HEMTs DC and RF burn-in of RF power GaN HEMTs - a method for pre-test stabilisation and technology benchmarking Global Methodology to Assess GaN Reliability from Defect Localization to Failure Mechanism: Study Case on GaN HEMT Selex ES 0.25 µm Source Field Plate GaNHEMT Performances and Reliability Evaluation Coffee Break + Poster Exhibition 2 Presenter Session Chairs A Stocco, University of Padova G Meneghesso, Padova Uni F Doukhan, DGA O. Bengtsson, FBH C. Bouexiere, DGA A. Pantellini, Selex M Auf der Maur, University of Rome Tor Vergata K. Hirche, TESAT E. Neubauer, RHP M. Dollon, Airbus 12:00 to 13:00 13:00 Lunch P-band High Power SSPA Based on GaN HEMTs P.G. Arpesi, Selex 13:20 Elegant Bread-Board for 240 W P-band Power Assembly in GaN E. Van der Howen, TNO 13:40 GaN market survey P. Fayt, TAS(B) 14:00 to 14:20 14:20 Coffee Break + Poster Exhibition 14:40 15:00 15:20 15:30 The Italian Perspectives on the Application of GaN Technology in Future SAR and RADAR Systems GaN’s destiny : from circuits to Thales systems Next Generation GaN HEMT Technology at UMS Workshop summary and closing remarks Workshop close C. Lanzieri, Selex Y Mancuso, Thales Airborne Systems H. Blanck, UMS M Nikulainen (tbc), ESA J-L Cazaux, TAS