Event Programme

FINAL PROGRAM
th
11 Sept 2014
1. Substrate
Manufacture
Activity
Introduction and workshop opening
Current Status of 100mm Semi-Insulating SiC
substrates grown by HTCVD
Progress on manufacturing of Semi-Insulating SiC
substrates by Physical Vapour Transport
Progress in Highly Resistive Crystals Grown by
Ammonothermal Method
Coffee Break
Presenter
Session Chairs
B. Magnusson,
Norstel
M. Vogel, SiCrystal
T Martin, IQE
A Barnes, ESA
Parasitic Effects of Buffer Design on Static- and
Dynamic- Parameters of AlGaN/GaN High
Electron Mobility Transistors
AlGaN/GaN HEMTs with Carbon Doped GaN
Buffer Layer
D. Bisi, University of
Padova
11:00
Manga: Manufacturable GaN: SiC Substrates and
GaN epi Wafers Supply Chain
M. Mikkula, IAF
11:20
European GaN –on- SiC and GaN-on-Si Epitaxial
Wafers for Electronics
M. Germain, EpiGaN
11:40
The Development of GaN Electronic Device
Epitaxy at IQE Europe
Lunch
T. Martin, IQE
p-Channel GaN HFETs for Application in Harsh
Environments
Evaluation of AlN/GaN/AlGaN Double
Heterostructure on SiC Substrate for High Power
Millimeter Wave Applications
GaN Microwave and High Power Switching
Devices: Status and Perspectives at FBH
H. Hahn, University of
Aachen
F Medjoub, IEMN
08:45
09:00
09:20
09:40
2. Epitaxy and
materials
10:00 to
10:20
10:20
10:40
3. Devices
12:00 to
13:00
13:00
13:20
13:40
14:10
Large-area GaN-on-Si HFET 600 V Power
Devices for Highly-efficient, Fast-switching
Converter Applications
Status and perspectives on high voltage (>1.7kV)
SiC rectifiers
P. Waltereit, IAF
Fabrication and Performance of Microwave
Diamond Devices for Space Applications
Coffee Break
E. Limiti, University of
Rome Tor Vergata
M Pirola, Politecnico
Torino
16:10
Characterization of 0.25um and 0.5um
AlGaN/GaN HEMT Devices for High Power
Switching Applications
50W High Efficiency GaN L-band SSPA Output
Section
C-band GaN single-chip front-end MMIC
16:30
Magnus: Mid-project Status Report
P. Dueme, Thales
16:50
R. Quay, IAF
17:30
Advanced GaN/(In)AlGaN MMICs for Applications
in Space from K-band to W-band Frequencies
0.15µm InAlN/GaN HEMTs on SiC Technology for
K and Ka-Bands Applications
Drinks and poster exhibition
19:15
Depart for evening dinner
15:10 to
15:30
15:30
15:50
17:10
F Vitobello, ESA
H Blanck, UMS
J. Wuerfl, FBH
Break
14:50
W Scheidler, EDA
J Wuerfl, FBH
P. Gamarra, TRT
14:00 to
14:10
14:30
4. Circuits
M. Zajac, Ammono
P. Godignon, CNM
J. Lhortolary, TAS(Fr)
M. Van Heijningen,
TNO
S. Piotrowicz, III-V
Lab
E Limiti, Rome University.
J-L Roux, CNES
FINAL PROGRAM
POSTERS
TITLE
1. Thorough Study of the Evolution of the Microstructure of Thick
GaN Crystals for Homoepitaxial Processing of GaN Devices
2. Excitation Power Dependent Photoluminescence Spectroscopy
of InAlN/AlGaN Quantum Wells on Sapphire Substrate
3. Nearly perfect crystalline quality of GaN high electron mobility
transistor structure grown on native GaN substrate
4. Investigation of ZnO (ALE) / GaN (MOCVD) Heterostructures for
Advanced Wide Bandgap Semiconductor Cold Cathodes
5. Hot-wall MOCVD Grown High-quality GaN HEMT Structure:
bottom-to-top Optimization
6. MOCVD Growth of Epitaxial BGaN Layers
7. Comparison of InAlN and AlGaN High Electron Mobility
Transistors for High Temperature Space Applications
8. Fibre-coupled Light Emitting Diodes with Peak Emission at
250nm
9. Performance of AlGaN/GaN HEMTs of Varying Sizes on Silicon,
Sapphire and SiC Substrates
10. 0.25 Ω-mm Ohmic Contacts to AlN/GaN HEMT Structure with
in-situ SiN Passivation
11. Investigation of Charge Redistribution with Substrate Biases in
AlGaN/GaN HEMTs
12. AlGaN-based UV LEDs Emitting at Wavelengths Below 250 nm
13. Towards highly positive and scalable threshold voltage in
normally-off III-N HEMTs
14. Energy Gap Fluctuations Induced by Random Alloy Disorder in
InGaN/GaN Nanostructures
15. GaN/Si Acoustic Devices Towards Sensing Applications
16. Time-domain Waveform Measurements Under Large Signal RF
Overdrive Stress in HEMT Technology
17. Critical Failure Mechanism of 0.25µm AlGaN/GaN Technology at
Very High Stress HTOL
AUTHOR
E. Meissner, IAF
S Norouzian-Alam, MTSL Tyndall
E. Janzen, Linkoping University
O Kim-Hak, CNES
E. Janzen, Linkoping University
T. Malinauskas, Vilinius University
M. Smith, MTSL Tyndall
M. Akhter, MTSL Tyndall
A. Al-Khalidi, Glasgow University
A. Al-Khalidi, Glasgow University
M. Caesar, Bristol University
S. Einfeldt, FBH
J. Kuzmik, Slovak Academy
M. Auf der Maur, University of
Rome Tor Vergata
A. Stefanescu, IMT Bucharest
A. Benvegnu, Xlim Labs
D. Carisetti, TRT
FINAL PROGRAM
th
12 Sept 2014
Activity
Presenter
Session Chairs
G Meneghesso,
University of
Padova
O. Bengtsson, FBH
F Doukhan, DGA
G Meneghesso, Padova Uni
gg
5. Reliability
08:45
09:00
09:20
09:40
10:00
10:20 to
10:40
5. Assembly +
Packaging
10:40
Self-consistent Electro-thermo-mechanical
Simulation of Strain in Nitride HEMTs
11:00
11:20
GREAT
Metal-Diamond Composites: High Thermal
Conductive Composites with Tailored
Coefficient of Thermal Expansion
Future GaN need for power switching packaging and assembly
11:40
6. Demonstrators
and System
Needs
Welcome + Day 1 resume
Simple Technique for Failure Modes
Detection on High-performances Space
Designed GaN HEMTs
DC and RF burn-in of RF power GaN HEMTs
- a method for pre-test stabilisation and
technology benchmarking
Global Methodology to Assess GaN
Reliability from Defect Localization to Failure
Mechanism: Study Case on GaN HEMT
Selex ES 0.25 µm Source Field Plate GaNHEMT Performances and Reliability
Evaluation
Coffee Break + Poster Exhibition
2
C. Bouexiere, DGA
A. Pantellini, Selex
M Auf der Maur,
University of Rome
Tor Vergata
J Laetti, TESAT
E. Neubauer, RHP
M. Dollon, Airbus
12:00 to
13:00
13:00
Lunch
P-band High Power SSPA Based on GaN
HEMTs
P.G. Arpesi, Selex
13:20
Elegant Bread-Board for 240 W P-band
Power Assembly in GaN
M Van Heijningen,
TNO
13:40
GaN market survey
P. Fayt, TAS(B)
14:00 to
14:20
14:20
Coffee Break + Poster Exhibition
14:40
15:00
15:20
15:30
The Italian Perspectives on the Application of
GaN Technology in Future SAR and RADAR
Systems
GaN’s destiny : from circuits to Thales
systems
Next Generation GaN HEMT Technology at
UMS
Workshop summary and closing remarks
Workshop close
C. Lanzieri, Selex
Y Mancuso, Thales
Airborne Systems
H. Blanck, UMS
M Nikulainen, ESA
L Marchand, ESA

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