Overview of the Compound Semiconductor

Overview of the Compound Semiconductor
Materials Committee Activities
Compound Semiconductor Materials Standards
Committee
Charter
• To develop standards required for the
transfer of compound semiconductor and
related materials from supplier to user and for
equipment design. These standards exist in
support of integrated circuits, microwave
devices, and opto-electronic applications.
Participating Companies*
Global Compound Semiconductor Materials Technical Committee
3M
Air Liquide
AIST
AIXTRON
Brewer Science
Bridgestone
ChemTrace
Chunghwa Picture Tubes
Climax Molybdenum
Cree
Dow Corning
DuPont
Entegris
FM Approvals
Fraunhofer
Freiberger
Global Power Device
GLOBALFOUNDRIES
Green Solar Tech
Harbin Institute
HCL America
Hitachi
Infineon Technologies
IQE
Istituto CNR-IMEM
JolyWood Sunwatt
Lehighton Electronics
LPE spa
Nanometrics
Norstel
Northrop Grumman
NOVASiC
Novati Technologies
Pall Corporation
Panasonic
Rasa Industries
Samsung
SemiMap Scientific
Shin-Etsu Handotai
Showa Denko
SiCrystal
SOL Corporation
SUMCO Corporation
Sumika Chemical
Sumitomo
Suss MicroTec
TBEA SunOasis
Toshiba
Yingli Green Energy
Zygo Corporation
* Partial List
Published Standards [1/2]
Doc #
Details
SEMI M9
Specifications for Polished Monocrystalline Gallium Arsenide Wafers
SEMI M15
Polished Wafer Defect Limits Table for Semi-Insulating Gallium Arsenide Wafers
SEMI M23
Specification for Polished Monocrystalline Indium Phosphide Wafers
SEMI M36
SEMI M37
SEMI M39
SEMI M42
SEMI M46
SEMI M54
Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density
Gallium Arsenide Wafers
Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density
Indium Phosphide Wafers
Test Method for Measuring Resistivity and Hall Coefficient and Determining Hall
Mobility in Semi-Insulating GaAs Single Crystals
Specification for Compound Semiconductor Epitaxial Wafers
Test Method for Measuring Carrier Concentrations in Epitaxial Layer Structures by
ECV Profiling
Guide for Semi-Insulating (SI) GaAs Material Parameters
Published Standards [2/2]
Doc #
SEMI M55
SEMI M63
SEMI M64
SEMI M65
SEMI M75
SEMI M79
SEMI M81
SEMI M82
SEMI M83
Details
Specification for Polished Monocrystalline Silicon Carbide Wafers
Guideline: Test Method for Measuring the Al Fraction in AlGaAs on GaAs
Substrates by High Resolution X-Ray Diffraction
Test Method for the EL2 Deep Donor Concentration in Semi-Insulating (SI) Gallium
Arsenide Single Crystals by Infrared Absorption Spectroscopy
Specifications for Sapphire Substrates to use for Compound Semiconductor
Epitaxial Wafers
Specifications for Polished Monocrystalline Gallium Antimonide Wafers
Specification for Round 100 mm Polished Monocrystalline Germanium Wafers for
Solar Cell Applications
Guide to Defects Found in Monocrystalline Silicon Carbide Substrates
Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium
Arsenide Single Crystals by Infrared Absorption Spectroscopy
Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of
III-V Compound Semiconductors
North America Compound
Semiconductor Materials Committee
Leadership
• Committee Co-chairs
– Jim Oliver (Northrop Grumman)
– Russ Kremer (Freiberger CM USA)
Current Committee Structure
NA Compound Semiconductor
Materials Committee
C: Jim Oliver (Northrop Grumman)
C: Russ Kremer (Freiberger CM USA)
Electrical Properties TF
Silicon Carbide TF
L: Austin Blew / (Lehighton Electronics)
L: Open
Gallium Nitride (GaN) TF
L: Judy Kronwasser (NOVASiC)
M55 5-Year Review TF
L: Judy Kronwasser (NOVASiC)
Meeting Information
• Last meeting
– May 21 in conjunction with CS MANTECH 2014
Denver, Colorado, USA
• Next meeting
– Virtual Meeting via Web meeting and
Teleconference
• November 2014
Recent Ballot Results
Document
#
Document Title
4979
New Standard: Specification for Round, Polished GaN
Wafers
5593
Line Item Revision to SEMI M9.7-0708, Specification for
Round 150 mm Diameter Polished Monocrystalline Gallium
Arsenide Wafers (Notched)
Line Item 1 – Addition of Thickness, center point of 550 um
to §4, Physical Requirements
Committee
Action
Failed and
returned to the TF
for rework
Passed
committee review.
(Superclean)
Documents under Development
Doc #
4979A
Details
New Standard: Specification for Polished Monocrystalline C-Plane
Gallium Nitride Wafers
5220
New Standard: Test Method for Measuring Vanadium Concentration in
Silicon Carbide by Secondary Ion Mass Spectrometry
5593
Line Item Revision to SEMI M9.7-0708, Specification for Round 150 mm
Diameter Polished Monocrystalline Gallium Arsenide Wafers (Notched)
Task Force Updates [1/5]
• Electrical Properties TF / ASTM F1.15 Subcommittee (1/3)
– GaN HEMT Mobility Round Robin Update
• II-VI Incorporated sent five samples of their 3” Silicon Carbide
substrates
• Dr. Xiang Ming Pan (IQE-RF) will assist with growing the Epi
• Round Robin Work Group
– The first round: non-contact / non-destructive measurement on wafers such
as GaN on SiC
– The second round: wafers will be cleaving into 10 x10 mm with ohmic for
measure by Destructive Hall measurements
» The round robin needs help in developing procedures for cleaving the
wafers and making contacts
» Volunteers are welcomed to confirm, test schedules and condition for
non-destructive / destructive testing
» Please contact the round robin leader, Danh Nguyen at
[email protected] or 610-377-5990
Task Force Updates [2/5]
• Electrical Properties TF / ASTM F1.15
Subcommittee (2/3)
– F1.15 GaN Epitaxial Wafer Reference Material TF
• Goal: Develop test methods for evaluating transport
properties of GaN epi-layers
• The TF was able to obtain wafer samples from
Ostendo (formerly TDI, Inc.) and Kyma
– Samples from Ostendo are GaN on Sapphire, 2 inch and
includes one unintentionally doped n-type and one Si doped
– Sample from Kyma is GaN on Sapphire, 3 inch and is
unintentionally doped n-type
Task Force Updates [3/5]
• Electrical Properties TF / ASTM F1.15 Subcommittee (3/3)
– F1.15 GaN Epitaxial Wafer Reference Material TF
(continued)
• Electrical hall testing was performed on the wafer samples obtained
– Results of the electrical hall testing on the sample from Kyma will be used
in the follow-up GaN round robin measurements
– The sample wafers will then be shipped to Danh Nguyen
• The TF will carry on with its testing of non-destructive and
destructive methods for electrical, optical and microstructural on the
samples obtained
– electrical: Eddy-current; Hall; C-V, CTLM;
– optical: PL, CL, Raman;
– microstructural: TEM, XRD
Task Force Updates [4/5]
• SEMI M55 (Polished Monocrystalline Silicon Carbide Wafers) Five-Year
Review TF
– The TF will await further word regarding the IP review of SEMI M55 from
Arnd Weber (SiCrystal)
• Silicon Carbide (SiC) TF
– The TF is still looking for a TF leader
– The TF deferred to the EU Silicon Carbide TF where most of the SiC
activities have been occurring
• The EU Silicon Carbide TF reviewed Intellectual Property (IP) for the SiC 100
mm and SiC 150 mm documents
• Document 5370 (Revision to add a subordinate standard to SEMI M55, 150
mm SiC Wafer Specification) pending publication.
• Document 3784E (100 mm SiC Wafer Specification) is currently being drafted
and will be balloted in Cycle 4-2014.
Task Force Updates [5/5]
• Gallium Nitride (GaN) TF
– Document 4979, (Polished Monocrystalline GaN
Wafers)
• The document was failed by the committee after
receiving useful feedback and comments from voters.
• The TF will continue to improve the document based
on feedback received from the voters.
– The TF will reballot the document as 4979A sometime in
2014 before the next meeting in November 2014.
Thank You!
For more information or to participate
in any NA CSM activities, please contact
Michael Tran ([email protected])
Europe Compound Semiconductor
Materials Committee
Leadership
• Committee Co-chair
– Arnd Weber; SiCrystal, Germany
• 2nd Co-chair position vacant
– Looking for a 2nd co-chair
Meeting Information
•
Last meeting
•
•
•
Nuremburg, Germany
April 10th, 2014
Next meeting
•
To be decided
ECS Committee Structure & Leaders
Compound Semiconductor
Materials Committee
Co-Chair:
Arnd Weber - SiCrystal
5-year review TF
L: Hans-Christian Alt / HM
New
Silicon Carbide TF
L: Arnd Weber - SiCrystal
Contactless Resistivity and
Mobility Mapping TF
L: Wolfgang Jantz - Semimap
Global SiC Task Force
• Leader: Arnd-Dietrich Weber, SiCrystal
• Rationale: Create a basic standard for SiC wafer material
and a specification for 2” ,3”, 100mm and 150mm SiC
wafers
• Status: 100mm wafers (document 3784E)
Relaunch of technical work completed
Approved for Ballot Cycle 4 in 2014
• SiC 150mm wafer standard (Document 5370):
Committee approval of superclean ballot review.
-> Publication in progress.
Contactless Capacitive Resistivity
Measurement of SI-Semiconductors TF
• Leader: Wolfgang Jantz, Semimap
• Rationale : Create a standard for Capacitive Measurements
(separate from NA TF addressing resistivity measurements in
general; transfer and upgrading of DIN50448 )
Members of TF : U. Kretzer/FCM, H.-Ch.. Alt/FH München
Invitation to Hitachi Cable and J. Oliver/Northrop Grumman
• Ballot 5075 (reapproval of M54 s.i. GaAs material parameters)
passed
• Reapproved SNARF/TFOF (procedural issue)
• Work on a draft is ongoing, preparation of round robin
New: 5-year Review TF
• Leader: Hans-Christian Alt, FHM
Rationale: perform 5-year review of GaAs related
documents:
SEMI M46, SEMI M63, SEMI M64
• New SNARFS:
– SEMI M46: Guideline: test method for measuring the al fraction in
AlGaAs on GaAs substrates by high resolution x-ray diffraction
– SEMI M63: test method for measuring carrier concentrations in
epitaxial layer structures by ecv profiling
– SEMI M64: test method for the El2 deep donor concentration in
semi-insulating (Si) gallium arsenide single crystals by infrared
absorption spectroscopy
Recently Issued Ballot
Cycle 4-2014
Document #
3874E
Document Title
Committee Action
Specification for 100 mm round polished mono
SiC Material and Wafer
crystalline 4H and 6H silicon carbide wafers to SEMI
Specification
M55-0308
Ballot Results
• Ballot 5370: Specification for 150mm Silicon
Carbide single-crystalline substrates
– Ballot passed committee review
• Return Percentage: 60.29%
• Accept percentage: 100%
– Ballot is awaiting further review by the Audits &
Review Subcommittee.
Thank You!
For more information or to participate
in any Europe CSM activities, please
contact Andrea Busch
([email protected])
Japan Compound Semiconductor
Materials Committee
General Information
• Leadership
– Co-chairs
• Masayoshi Obara/ Shin-Etsu Handotai Co., Ltd.
– Compound Semiconductor Materials committee
representative to the JRSC
– GCS voting member
• OPEN
• Meeting
– No TC meeting for long time
Compound Semiconductor Materials
Committee Organization
Japan Compound
Semiconductor Materials Committee
Masayoshi Obara / SEH
TBD
International SiC TF
Taizo Hoshino/
Nippon Steel
5 year Review TF
Leader: Open
Sapphire Substrate TF
Toshiro Kotaki/
Namiki Precision Jewel
Global 200mm GaAs
Specification TF
Leader: Open
Current Status
• No activity. However, the committee is
interested in the activity related to the
sapphire wafer specification under HB LED
TC.
• Need to discuss whether or not the following
task forces disband or energize
– Global 200mm GaAs Wafer Specification TF
– Five-year Review TF
Thank you!
For more information, please contact:
Junko Collins, SEMI Japan
[email protected]
Get Involved!
• Get your company support
• Register today: www.semi.org/standardsmembership
• SEMI Standards Technical Committees
Assembly & Packaging
Automated Test Equipment
Compound Semiconductor Mat’ls
Environmental Health & Safety
Facilities
FPD Materials & Components
FPD Metrology
Gases
High-Brightness LED
Information & Control
Liquid Chemicals
MEMS / NEMS
Metrics
Micropatterning
Photovoltaic
Photovoltaic Automation
Photovoltaic Materials
Physical Interfaces & Carriers
Silicon Wafer
Traceability
3DS-IC
(three-dimensional stacked integrated circuits)
Staff Contacts
Global Compound Semiconductor Materials Committee
North America
Michael Tran
408.943.7019
[email protected]
Japan
Junko Collins
81.3.3222.5819
[email protected]
Europe
Andrea Busch
33.4.3878.9652
[email protected]