RCE-DR

Updated information on SUNAM
SUNAM'ss RCERCE-DR process and
recent results
IEA ExCo Meeting,
9.-11.
9.
11. May 2012, Heidelberg
GyeWon Hong, SeungHyun Moon
Superconducting Nano & Advanced Materials
Su
0
SUNAM
Semi in-line pilot line for 2G wire
 Site
Sit area : 5
5,500
500 m2,
Building area : 1,750 m2,
Gross floor area : 3
3,050
050 m2.
 Class < 10,000 clean
room area : 1,000 m2 .
1
SUNAM
SuNAM’s 2G Wire Architecture
Protecting layer (1.5 mm)
Ag
ReBCO
LaMnO3
Epi-MgO
p g
IBAD-MgO
Y2O3
Al2O3
Hastelloy
or SUS
DC sputter
S
Superconducting
d ti
llayer (1 ~ 3 mm))
RCE
C
Buffer layer ~20 nm
sputter
Homoepi-MgO layer ~ 20 nm
IBAD-MgO layer ~ 10 nm
Seed layer (Y2O3)
~ 7 nm
Diffusion barrier (Al2O3)
~ 40 nm
Hastelloy C276 (Ni-alloy tape)
or
SUS-tape
IBAD
(sputter &
E-beam)
Electro
-polishing
po s g
( + Cu electroplating (+ lamination))
2
SUNAM
RCE process

Reactive Co-Evaporation (RCE) :

Using inherently least expensive sources
High deposition rate can be used & adjustable composition
Especially easy to scalable to large deposition area

Very promising methods for HTS wafer production : Theva,
Theva STI


RCE
RCE-CDR
process
(Y, Gd, Sm)
3
Ba
Cu
SUNAM
SuNAM develops RCERCE-DR process.
Conventional RCERCE-CDR process




RCE-CDR : Reactive Co-Evaporation
by Cyclic Deposition & Reaction
(EDDC(KAIST/ KERI, batch) &
LANL/STI, R2R(planned))
KAIST/
KERI
CDR : Co-evaporation at low O2
pressure followed by reaction in high
PO2 in cyclic manner
manner.
Pulsed deposition : low average
growth rate.
High speed(> 100 rpm), high
temperature(> 800 oC) mechanically
rotated drum is required : complexity,
complexity
cost, difficult to scale up
Massive(> 100’s of
kg on scale-up)
LANL/
STI
4
SUNAM
New SuNAM RCERCE-DR process

RCE-DR : Reactive Co-Evaporation
by Deposition & Reaction (SuNAM,
R2R) : Patent pending(PCT)

High rate co-evaporation at low
temperature & pressure to the target
thickness(> 1 m) at once in



deposition zone (6 ~ 10nm/s)
Fast (<< 30 sec. ) conversion from
amorphous glassy phase to
superconducting phase at high
temperature and oxygen pressure in
reaction zone
Simple, higher deposition rate & area,
low system cost
Easy to scale up :single path
Conventional
CDR path
(repeat more
than >>1,000
times)
5
SuNAM
DR path
(single
time)
SUNAM
RCE – DR Results on Stainless steel substrate
600
500
IC (A)
400
300
200
Length (m)
100
470
Ave IC Max IC
(A)
(A)
508
527
Min IC
(A)
440
1 sigma
(%)
3.0
0
0
100
200
300
400
Length (m)
6
SUNAM
RCE – DR Results on Stainless steel substrate
500
Ic ( A / 10 mm )
400
300
200
100
0
0
200
400
600
800
1000
Ic x L :
Length ( m )
7
(1) 275A x 1,005m = 277,380
(2) 355A x 920m = 326,600
SUNAM
RCE – DR Results on Hastelloy substrate
900
800
700
Ic ( A / cm )
600
500
400
300
200
Tot.Length
((m))
Avg.Ic
((A))
Max.Ic
((A))
Min Ic
((A))
1 sigma
((%))
1000.2
692.5
796.2
421.7
10.7
100
Ic x L :
0
0
100
200
300
400
500
600
Length ( m )
700
800
900
1000
422A x 1,000m =421,700
This shows the average vlaues for each 2 meters.
8
SUNAM
Development of HTS 2G wire
422A/1000 m
SuNAM
(2012.1)
572 A/816
/
m
Fujikura
355 A/920 m
(2011.02)
SuNAM
(2011.10)
153 A/1311 m
SuperPower
(2008.08)
350 A/504 m
Fujikura
(2008.06)
173 A/595 m
SuperPower
(2007 01)
(2007.01)
282 A/1065m
SuperPower
405 A/610 m
(2009.08)
SuNAM
466 A/540 (2011.10)
m
AMSC
(2010.10)
370 A/470 m
SuNAM
((2011.07))
310 A/500 m
SWCC
213 A/245 m
SRL-ISTEC
(2008.05)
(2005.08)
275 A/470 m
SuNAM
YBCO
9
(2010.10)
SUNAM
Development of HTS 2G Wire
Criticcal Curreent: I c (A
A/cm-w@777K, s.f.)
(2011.4)
20mx1,000A
(2009.10)
(2010.10)
800 15mx700A
100mx700A
750
Japanese Strategy
700
(2009.9)
650
170
170mx645A
645A
600
(2010.10)
(2008.8)
615mx609A
(2011.2)
550 40mx600A
816mx572A
(2010.10) 540mx466A
500
(2012.1)
450
1000mx422A
(2011.10)
(2008.2)
400
610mx405A
(2011.10)
(2010.2)
504mx350A
350
920mx355A
IcxL
(2009.8) 540mx337A
200mx300A
300
(2005.8)
400kAm
((2008.10)) 500mx300A
245mx213A
250
(2009.8)
(2007.10) 500mx250A
300kAm
1065mx282A
200 (2006.7)
(2007.9)
(2007.10)
200mx205A (2011.07)
200kAm
150 100mx253A
790mx190A
470mx370A
(2008.8)
(2009.2)
100
1.3kmx153A 100kAm
198mx205A
US
Strategy
50
10kAm
0
00
200
400
600
800
1000
1200
1400
200
400
600
800
1000
1200
1400
Piece Length of Coated Conductor : L (m)
10
SUNAM
RCE--DR : Mechanical Properties
RCE
1.1
800
600
400
200
hastelloy substrate; R C E-Sm BC O C C
stainless steel substrate; G dBC O C C tape
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.8
0.7
0.6
0.5
0.4
0.3
0.0
0.0



 rev. = 0.56%
Sm BC O C C with hastelloy substrate
loading
unloading
G dBC O CC with stainless steel substrate
loading
unloading
0.2
0.4
0.6
0.8
U niaxial strain, %
100
200
300
400
500
600
700
800
900
1000
Tensile stress, MPa
0.8
0.2
G dBCO -C C Tape
w ith SU S substrate
I c0 = 167.5A
loading
unloading
0
 rev. = 0.73%
0.4
 rev. = 812 M Pa
0.9
1.4
1.0
0.6
 95% Ic = 581 MPa
1.0
Uniaxial strain, %
Normalized critica
N
al current, Ic/Ic0
Uniaxia
al stress, MPa
1000
Normalized c
critical curren
nt, Ic/Ic0
at 77K

1.0
1.2
1.4
11
5 % reduction of Ic @ 581 MPa
Reversible strain limit : 812 MPa
Reversible strain limit :


~ 0.56
0 56 % ffor S
SmBCO/Hastelloy
BCO/H t ll
~ 0.73 % for GdBCO/SUS
Mechanical Properties of CC on SUS
good enough
SUNAM
Thank you for your attention!
contact : SeungHyun Moon
[email protected],
@i
[email protected]
h
@k
k
12
SUNAM

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