Three Phase PSDS 83 I = 100 A Rectifier Bridge V = 800

Three Phase
Rectifier Bridge
Slim Version
PSDS 83
IdAV
VRRM
= 100 A
= 800-1800V
Preliminary Data Sheet
VRSM
VDSM
(V)
800
1200
1400
1600
1800
VRRM
VDRM
(V)
800
1200
1400
1600
1800
Type
PSDS 83/08
PSDS 83/12
PSDS 83/14
PSDS 83/16
PSDS 83/18
Features
Symbol
Test Conditions
IdAVM
IFSM
TC = 100 °C,
∫ i2 dt
TVJ
TVJM
Tstg
VISOL
Maximum Ratings
(per module)
100
A
TVJ = 45 °C
t = 10 ms (50 Hz), sine
1200
A
VR = 0
t = 8.3 ms (60 Hz), sine
1300
A
TVJ = TVJM
t = 10 ms (50 Hz), sine
1000
A
VR = 0
t = 8.3 ms (60 Hz), sine
1100
A
TVJ = 45 °C
t = 10 ms (50 Hz), sine
7200
A²s
VR = 0
t = 8.3 ms (60 Hz), sine
7020
A²s
TVJ = TVJM
t = 10 ms (50 Hz), sine
5000
A²s
VR = 0
t = 8.3 ms (60 Hz), sine
5020
A²s
-40... + 150
150
°C
°C
-40... + 125
°C
50/60 Hz, RMS t = 1 min
2500
V∼
5
Nm
(M5)
Weight
Max. terminal connection torque
typ.
5
120
Nm
g
Symbol
Test Conditions
IR
VR = VRRM, TVJ = 25°C
≤
0.3
mA
VR = VRRM, TVJ = TVJM
≤
5
mA
RthJK
ds
dA
a
IF = 100 A,
TVJ = 25 °C
Characteristic Value
≤
1.35
For power-loss calculations only
Planar glass passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL release applied, RoHS conform
Applications
•
•
•
•
•
Supplies for DC power equipment
Input rectifier for PWM inverter
Battery DC power supplies
Field supply for DC motors
etc.
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Max. allowed screw-in depth: 8.5 mm
V
0.8
V
5
mΩ
per diode; DC current
per module
per diode; DC current
0.58
0.097
0.825
per module
0.138
K/W
10.0
9.4
50
mm
mm
m/s²
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
Isolation voltage 3000 V∼
•
•
•
3000
(M5)
VF
VTO
rT
RthJC
Package with screw terminals
Advantages
Max. mounting torque
t=1s
Low profile (overall height: 17 mm)
V∼
Md
IISOL ≤ 1 mA
•
•
•
•
•
•
•
K/W
K/W
K/W
Data according to IEC 60747 refer to a single diode unless otherwise stated
POWERSEM GmbH, Walpersdorfer Str. 53
 2008 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 Email: [email protected]
PSDS 83
200
IF(OV)
-----IFSM
IFSM (A)
TVJ=45°C
TVJ=150°C
1.6
550
500
150
1.4
1.2
100
1
0 VRRM
0.8
50
Tvj= 150°C
0
0.5
1.0
1/2 VRRM
Tvj= 25°C
1.5
0.6
0.4
2.0
VF (V)
0
10
Forward current versus
voltage drop per diode
DC
sin.180°
rec.120°
rec.60°
rec.30°
[A]
120
1 VRRM
1
2
10 t[ms] 10
3
10
Surge overload current
per diode IFSM: Crest value
t: duration
1
K/W
Z thJK
0.8
100
0.6
80
Z thJC
IdAV
0.4
60
40
0.2
20
0
Z th
50
100
150
TC(°C)
200
Maximum forward current
at case temperature
0.01
0.1
1
10
t[s]
Transient thermal impedance per diode
 2008 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20