PSD 112

Three Phase
Rectifier Bridges
PSD 112
IdAVM
VRRM
= 127 A
= 800-1800 V
Preliminary Data Sheet
VRSM
V
800
1200
1400
1600
1800
VRRM
V
800
1200
1400
1600
1800
Type
PSD 112/08
PSD 112/12
PSD 112/14
PSD 112/16
PSD 112/18
~
~
~
Symbol
Test Conditions
IdAVM
IFSM
TC = 90°C, module
TVJ = 45°C
t = 10 ms (50 Hz), sine
VR = 0
t = 8.3 ms (60 Hz), sine
127
1200
1300
A
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1000
1100
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
7200
7200
A2 s
A2 s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
5000
5000
A2 s
A2 s
-40 ... + 150
150
-40 ... + 125
°C
°C
°C
2500
3000
V∼
V∼
5
5
270
Nm
Nm
g
∫ i2 dt
TVJ
TVJM
Tstg
VISOL
Md
Weight
50/60 HZ, RMS
IISOL ≤ 1 mA
Maximum Ratings
t = 1 min
t=1s
Mounting torque
Terminal connection torque
typ.
(M6)
(M6)
Features
• Package with screw terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered, E148688
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
Symbol
Test Conditions
Characteristic Value
IR
VR = VRRM
VR = VRRM
≤
≤
0.3
5.0
mA
mA
VF
VTO
rT
RthJC
IF = 300 A
TVJ = 25°C
For power-loss calculations only
TVJ = TVJM
≤
1.7
0.8
4
V
V
mΩ
per diode; DC current
per module
0.9
0.15
K/W
K/W
RthJK
per diode; DC current
per module
1.08
0.18
K/W
K/W
dS
Creeping distance on surface
10.0
mm
dA
a
Creeping distance in air
Max. allowable acceleration
9.4
50
mm
m/s2
TVJ = 25°C
TVJ = TVJM
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
PSD 112
300
10
IF(OV)
-----IFSM
IFSM (A)
TVJ=45°C
TVJ=150°C
[A]
250
1.6
200
900
4
2
As
780
1.4
1.2
150
TVJ=45°C
1
100
0 VRRM
TVJ = 150°C
TVJ=150°C
0.8
1/2 VRRM
50
TVJ = 25°C
IF
0.6
1 VRRM
10
0
0.5
1.0
1.5
VF [V]
0.4
2.0
10
Fig. 1 Forward current versus
voltage drop per diode
400
[W]
0
10
1
t[ms] 10
2
10
3
1
85
TC
90
0.15 0.09
350
= RTHCA [K/W]
0.22
95
100
300
4
t [ms]
110
0.34
10
130
DC
sin.180°
rec.120°
rec.60°
rec.30°
[A]
110
105
250
6
Fig. 3 ∫i2dt versus time
(1-10ms) per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
PSD 112
2
3
90
115
200
120
0.59
150
DC
sin.180°
rec.120°
rec.60°
rec.30°
100
50
PVTOT
0
IFAVM
50
125
130
50
135
1.34
140
145
I dAV
150
0
°C
0
100
[A]
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient
temperature
50
100
150
200
T C (°C)
Fig.5 Maximum forward current
at case temperature
K/W
ZthJK
1.2
1
0.8
Z thJC
0.6
0.4
0.2
Zth
0.01
0.1 t[s] 1
10
Fig. 6 Transient thermal impedance per diode
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions

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