Three Phase PSD 105 = 160 A Rectifier Bridges = 800

Three Phase
Rectifier Bridges
PSD 105
IdAVM
VRRM
= 160 A
= 800-1800 V
Preliminary Data Sheet
VRSM
V
800
1200
1400
1600
1800
VRRM
V
800
1200
1400
1600
1800
Type
PSD 105/08
PSD 105/12
PSD 105/14
PSD 105/16
PSD 105/18
~
~
~
Symbol
Test Conditions
IdAVM
IFSM
TC = 85°C, module
TVJ = 45°C
t = 10 ms (50 Hz), sine
VR = 0
t = 8.3 ms (60 Hz), sine
160
1500
1650
A
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1350
1500
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
11250
11300
A2 s
A2 s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
9120
9350
A2 s
A2 s
-40 ... + 150
150
-40 ... + 150
°C
°C
°C
2500
3000
V∼
V∼
5
5
240
Nm
Nm
g
∫ i2 dt
TVJ
TVJM
Tstg
VISOL
Md
Weight
50/60 HZ, RMS
IISOL ≤ 1 mA
Maximum Ratings
t = 1 min
t=1s
Mounting torque
Terminal connection torque
typ.
(M5)
(M5)
Features
• Package with screw terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered, E 148688
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
Symbol
Test Conditions
Characteristic Value
IR
VR = VRRM
VR = VRRM
≤
≤
0.3
8.0
mA
mA
VF
VTO
rT
RthJC
IF = 150 A
TVJ = 25°C
For power-loss calculations only
TVJ = TVJM
≤
1.6
0.8
5
V
V
mΩ
per diode; DC current
per module
0.83
0.138
K/W
K/W
RthJK
per diode; DC current
per module
1.13
0.188
K/W
K/W
dS
dA
a
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
14
14
50
mm
mm
m/s2
TVJ = 25°C
TVJ = TVJM
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
PSD 105
10
IF(OV)
-----IFSM
200
TVJ=45°C
1.6
160
TVJ=150°C
1500
1350
1.4
T=150°C
120
2
As
IFSM (A)
A
5
1.2
10
4
TVJ=45°C
1
80
TVJ=150°C
0 VRRM
0.8
1/2 VRRM
T=25°C
40
0.6
IF
1 VRRM
10
0.4
0
10
1.5 V
Fig. 1 Forward current versus
voltage drop per diode
VF
500
[W]
1
0
10
1
t[ms] 10
2
10
3
1
2
3
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
4
t [ms]
6
10
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
80
TC
PSD 105
0.11 0.06
= RTHCA [K/W]
0.16
400
85
90
95
100
DC
sin.180°
rec.120°
rec.60°
rec.30°
120
105
0.26
300
160
[A]
110
115
80
120
0.46
200
125
DC
sin.180°
rec.120°
rec.60°
rec.30°
100
PVTOT
0
130
1.06
140
IdAV
145
0
°C
150
25
IFAVM
75
125
[A]
0
Tamb
40
135
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient
temperature
50
100
150
200
TC(°C)
Fig.5 Maximum forward current
at case temperature
K/W
Z thJK
1.2
1
Z thJC
0.8
0.6
0.4
0.2
Z th
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions

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