PDMB150E6C

QS043-402-20398(2/5)
PDMB150E6
IGBT Module-Dual
150 A,600V
2-Ø6.5
48.0
16.0
14.0
5
4
3-M5
23.0
9
14
9
3
5
4
4-fasten tab
#110 t=0.5
14
7
16
16
17
7
4-fasten tab
#110 t= 0.5
16
6
7
.0
30 +1
- 0 .5
23
23
3-M5
17.0
21.2 7.5
14
23.0
7
6
8
5(E1)
4(G1)
2
1
2-Ø 5.5
12
12
17
35
7
6
3
94
80 ± 0 .2 5
12 11
23
2
1
11
4
12
.0
30 +1
- 0 .5
(C1)
3
12.0 11.0 12.0 11.0 12.0
4
(E2)
2
94.0
80 ±0.25
7(G2)
6(E2)
4 18.0
(C2E1)
1
□ 外 形 寸 法 図 : OUTLINE DRAWING
4
□ 回 路 図 : CIRCUIT
PDMB150E6C
PDMB150E6
PDMB150E6C
Dimension:[mm]
□ 最 大 定 格 : MAXIMUM RATINGS
(TC=25℃)
Item
Rated
Symbol
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
Value
Unit
VCES
600
V
VGES
±20
V
IC
ICP
150
300
A
コ レ ク タ 損 失
Collector Power Dissipation
PC
560
W
接
合
温
度
Junction Temperature Range
Tj
-40~+150
℃
保
存
温
度
Storage Temperature Range
Tstg
-40~+125
℃
VISO
2,500
V(RMS)
DC
1ms
コ レ ク タ 電 流
Collector Current
絶
縁
耐
圧(Terminal to Base AC,1minute)
Isolation Voltage
Module Base to Heatsink
締 め 付 け ト ル ク
Mounting Torque
Busbar to Main Terminal
□ 電 気 的 特 性
Ftor
3(30.6)
PDMB150E6
2(20.4)
PDMB150E6C
2(20.4)
2(20.4)
N・m
(kgf・cm)
: ELECTRICAL CHARACTERISTICS (TC=25℃)
Characteristic
コ レ ク タ 遮 断 電 流
Collector-Emitter Cut-Off Current
ゲ ー ト 漏 れ 電 流
Gate-Emitter Leakage Current
Symbol
Test Condition
Min.
Typ.
Max.
Unit
ICES
VCE= 600V, VGE= 0V
-
-
1.0
mA
IGES
VGE= ±20V,VCE= 0V
-
-
1.0
μA
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
VCE(sat)
IC= 150A,VGE= 15V
-
2.1
2.6
V
ゲ ー ト し き い 値 電 圧
Gate-Emitter Threshold Voltage
VGE(th)
VCE= 5V,IC= 150mA
4.0
-
8.0
V
入
力
容
量
Input Capacitance
Cies
VCE= 10V,VGE= 0V,f= 1MHZ
-
7,500
-
pF
スイッチング時間
Switching Time
tr
ton
tf
toff
VCC=
R L=
RG=
VGE=
-
-
-
-
0.15
0.25
0.10
0.35
0.30
0.40
0.35
0.70
μs
上 昇 時 間
ターンオン時間
下 降 時 間
ターンオフ時間
Rise
Turn-on
Fall
Turn-off
□フリーホイーリングダイオードの 特 性: FREE
Time
Time
Time
Time
WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃)
Item
順
電
流
Forward Current
300V
2.0Ω
5.1Ω
±15V
DC
1ms
Characteristic
順
電
圧
Peak Forward Voltage
逆 回 復 時 間
Reverse Recovery Time
Rated
Symbol
IF
IFM
Symbol
Test Condition
Value
150
300
Unit
A
Min.
Typ.
Max.
Unit
VF
IF= 150A,VGE= 0V
-
1.9
2.4
V
trr
IF= 150A,VGE= -10V
di/dt= 300A/μs
-
0.15
0.25
μs
Min.
-
-
Typ.
-
-
Max.
0.22
0.45
Unit
□ 熱 的 特 性 : THERMAL CHARACTERISTICS
Characteristic
熱
抵
抗
IGBT
Thermal Impedance
Diode
Symbol
Rth(j-c)
Test Condition
Junction to Case
(Tc測定点チップ直下)
℃/W
00
日本インター株式会社
http://store.iiic.cc/
QS043-402-20398(3/5)
PDMB150E6
PDMB150E6C
Fig.1- Output Characteristics (Typical)
Fig.2- Output Characteristics (Typical)
T C=25°C
300
VGE=20V
VGE=20V
12V
15V
250
T C=125°C
300
12V
15V
250
Collector Current I C (A)
Collector Current I C (A)
11V
200
150
10V
100
9V
50
11V
200
150
10V
100
9V
50
8V
8V
0
0
1
2
3
4
0
5
0
1
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage V CE (V)
8
6
4
2
4
8
12
16
300A
IC=60A
14
150A
12
10
8
6
4
2
0
20
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
350
250
10
VCE =300V
200
8
200V
150
6
100V
100
4
50
2
100
200
300
400
500
0
600
Gate to Emitter Voltage VGE (V)
12
0
VGE=0V
f=1MHZ
T C=25°C
14
300
0
100000
16
RL =2.0(
TC=25°C
30000
Capacitance C (pF)
Collector to Emitter Voltage V CE (V)
10
400
Collector to Emitter Voltage V CE (V)
300A
150A
0
5
T C=125°C
16
12
0
4
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
T C=25°C
16
IC=60A
3
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
14
2
10000
Cies
3000
Coes
1000
Cres
300
100
0.1
Total Gate Charge Qg (nC)
0.2
0.5
1
2
5
10
20
50
100
200
Collector to Emitter Voltage VCE (V)
00
日本インター株式会社
http://store.iiic.cc/
QS043-402-20398(4/5)
PDMB150E6
PDMB150E6C
Fig.7- Collector Current vs. Switching Time (Typical)
1
10
VCC=300V
RG=5.1 (
VGE=±15V
T C=25°C
Resistive Load
tOFF
0.6
tf
0.4
tON
0.2
2
1
0.5
toff
0.2
ton
tr(V CE)
tf
0.1
0.05
tr(VCE)
0
VCC=300V
IC=150A
VGE=±15V
T C=25°C
Resistive Load
5
Switching Time t (µs)
Switching Time t (µs)
0.8
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
0
50
100
150
200
0.02
250
3
10
Collector Current IC (A)
Fig.10- Series Gate Impedance vs. Switching Time
10
VCC=300V
RG=5.1(
VGE=±15V
T C=125°C
Inductive Load
tOFF
tON
tf
0.1
tr(Ic)
VCC=300V
IC=150A
VGE=±15V
T C=125°C
Inductive Load
5
Switching Time t (µs)
Switching Time t (µs)
1
100
Series Gate Impedance RG (( )
Fig.9- Collector Current vs. Switching Time
10
30
0.01
2
1
0.5
toff
0.2
ton
0.1
tf
0.05
tr(IC )
0.001
0
50
100
150
200
0.02
250
3
10
Collector Current IC (A)
Fig.11- Collector Current vs. Switching Loss
Fig.12- Series Gate Impedance vs. Switching Loss
VCC=300V
RG=5.1(
VGE=±15V
T C=125°C
Inductive Load
12
EOFF
8
EON
ERR
4
0
50
100
150
200
250
Switching Loss ESW (mJ/Pulse)
Switching Loss ESW (mJ/Pulse)
100
300
16
0
30
Series Gate Impedance RG (( )
VCC=300V
IC=150A
VGE=±15V
T C=125°C
Inductive Load
100
EON
30
EOFF
10
ERR
3
1
3
10
30
100
Series Gate Impedance RG (( )
Collector Current IC (A)
00
日本インター株式会社
http://store.iiic.cc/
QS043-402-20398(5/5)
PDMB150E6
PDMB150E6C
Fig.13- Forward Characteristics of Free Wheeling Diode
(Typical)
T C=25°C
Fig.14- Reverse Recovery Characteristics (Typical)
1000
200
150
100
50
1
2
3
500
trr
200
100
50
10
4
IRrM
20
0
150
300
Forward Voltage VF (V)
450
600
750
900
-di/dt (A/µs)
Fig.15- Reverse Bias Safe Operating Area
1000
RG=5.1( , VGE=±15V, T C<125°C
500
200
Collector Current I C (A)
0
100
50
20
10
5
2
1
0.5
0.2
0.1
0
200
400
600
800
Collector to Emitter Voltage V CE (V)
Fig.16- Transient Thermal Impedance
3
Transient Thermal Impedance Rth (J-C) (°C/W)
Forward Current I F (A)
250
0
IF=150A
T C=25°C
T C=125°C
T C=125°C
Peak Reverse Recovery Current I RrM (A)
Reverse Recovery Time trr (ns)
300
1
FRD
3x10
IGBT
-1
1x10 -1
3x10 -2
1x10 -2
T C=25°C
3x10 -3
1 Shot Pulse
1x10 -3
10 -5
10 -4
10 -3
10 -2
10 -1
1
10 1
Time t (s)
00
日本インター株式会社
http://store.iiic.cc/