学术讲座题目：The materials physics of complex oxides 时间：2012 年 6 月 13 日上午 10:00 地点：微纳电子大厦 525 会议室报告人：Ahn 博士（Mechanical Engineering & Materials Science, Applied Physics &Physics, Yale Univ.） Complex oxide materials exhibit a tremendous diversity of behavior encompassing a range of functional properties, such as magnetism, ferroelectricity, multiferroicity, and superconductivity. As diverse as this behavior is, an even richer spectrum of possibilities becomes available if one starts to combine different complex oxides together with atomicscale precision to create new artificially structured, heterogeneous systems. In these nanostructured materials, cross-coupling between the functionalities of the individual component materials allows one material to modify the properties of the other constituent. In this talk, we describe the electrostatic control of strongly correlated behavior, such as magnetism and superconductivity, using intense electric fields, and we discuss applications of this approach to address current challenges in the modern electronics industry. CHARLES H. AHN Department of Applied Physics, P.O. Box 208284 YaleUniversity New Haven, Connecticut06520-8284 Phone: 203-432-6421 Email: [email protected] EDUCATION HarvardCollege, A.B. summa cum laude in Chemistry and Physics StanfordUniversity, M.S. in Applied Physics StanfordUniversity, Ph.D. in Applied Physics Postdoctoral Fellow/Maitre Assistant, University of Geneva APPOINTMENTS William K. Lanman Jr. Professor of Applied Physics and Physics and of Mechanical Engineering and Materials Science, Yale University, 2010-present Professor, Departments of Applied Physics and Physics, Yale University, 2007-2010 Associate Professor, Departments of Applied Physics and Physics, Yale University 2004-2007 Assistant Professor, Departments of Applied Physics and Physics, Yale University 2000-2004 SELECTED AWARDS AND HONORS Fellow of the American Physical Society, 2011. Fellow of the Connecticut Academy of Science and Engineering, 2011 American Vacuum Society Peter Mark Memorial Award, 2003. Alfred P. Sloan Fellowship, 2003-2005. YaleUniversity Junior Faculty Fellowship, 2003-2004. David and Lucile Packard Fellowship in Science and Engineering, 2001-2006. RESEARCH INTERESTS Professor Ahn’s research focuses on the growth and characterization of strongly correlated oxide films and heterostructures and on the fabrication of devices based on these structures. Current areas of investigation include: (i) electric field effects, (ii) multifunctional materials, (iii) high-κ dielectric materials, and (iv) applications in spintronics. Professor Ahn’s research program relies on expertise in the growth of high quality, epitaxial oxide thin films and heterostructures using advanced physical vapor deposition techniques, such as molecular beam epitaxy and off-axis magnetron sputtering. The research group has developed an array of techniques to characterize structural, electronic, and magnetic properties, and fabricates device structures based upon new materials concepts and structures.