adnition trio heraedit e tr tw Find oFiuntdwohuer moeentmineet in vantioovnati anndoin and in e at rigceh,t rihgerhet ahter e p, la one polance m m co i. se kemn mi.co ennse kfu le n e fu .t le w e w .t w w ww WEW NEN TS700V High Voltage BCDMOS TS700V High Voltage 0.80.8 µmµm BCDMOS TS700V High Voltage 0.8mm BCDMOS TS700V 0.8µm very high voltage BCDMOS technology providing customers a unique opportunity TS700V is very high voltage BCDMOS technology providing customers a unique TS700V is 0.8µm ais0.8mm very high voltage BCDMOS technology providing customers aopportunity unique opportunity to design products in the rapidly growing high voltage segment of consumer applications, such as as to design products in the rapidly growing high voltage segment of consumer applications, such assuch to design products in the rapidly growing high-voltage segment of consumer applications, electric vehicles, green energy and household electronics. electric vehicles, green energy andand household electronics. electric vehicles, green energy, household electronics. Key Features Features KeyKey Features TS700V is a feature rich 0.8mm BCDMOS bulk technology with integrated 750V MOSFET devices. The process TS700V a feature rich 0.8µm BCDMOS bulk technology integrated 700V MOSFET devices. TS700V is very a is feature 0.8µm BCDMOS technology withwith integrated 700V MOSFET devices. combines high rich voltage devices withbulk standard analog/digital circuits on the same die. This addresses, process combines very high voltage devices standard analog/digital circuit on the same TheThe process combines very high voltage devices withwith standard analog/digital circuit on the same among many others, the next generation LED lighting, offline switches and gate-driver applications. addresses, among many others, generation lighting, offline switches die.die. ThisThis addresses, among many others, the the nextnext generation LED LED lighting, offline switches and and Gate-Driver applications. Gate-Driver applications. • • • • Double Poly including capacitors and high 750V enhancement and depletion NMOS • Floating High-Side operation up to 600V • NPN, Substrate-PNP isolated VPNP Floating High-Side operation upup to • NPN, Substrate-PNP and and fullyfully isolated VPNP resistivity resistors Floating High-Side operation to600V 600V • 700V enhancement depletion NMOS •MOS capacitors, Zener diode and metal 700V enhancement andand depletion NMOS • MOS capacitors, 6.2V6.2V Zener diode and metal NPN, Substrate-PNP and fully isolated VPNP 5V and 20V fully isolated CMOS • and 5VCMOS: and fully isolated CMOS 5V 20V20V fully isolated CMOS fuse fuse MOS capacitors 20V high-side capable (VDSmax = 50V) • 20V CMOS: high capable (Vdsmax = 50V) •Sophisticated EKV models for MOS transistors 20V CMOS: high sideside capable (Vds max = 50V) EKVdiode models for MOS transistors 6.2V Zener Mid-voltage DMOS transistors (30V NMOS ISO, • Sophisticated • Mid-voltage DMOS transistors • Mid-voltage DMOS transistors available available EKV models for MOS transistors 40V NMOS & 45V PMOS) • Double including capacitors • Double PolyPoly including capacitors andand highhigh resistivity resistors resistivity resistors Applications Applications LCD and Plasma TVs/Flat Panel Displays Applications Industrial Motor Control • LCD, PDP panel displays PDP andand flat flat panel displays use use highhigh • LCD, Lamp Ballast LED Lighting Telecom Wire Line Applications •LED • LED Lighting OffLighting line Switchers •Telecom Wire Applications • Telecom Wire LineLine Applications Gate Drivers voltage technology for driver voltage technology for driver ICs ICs • Industrial Motor Control • Industrial Motor Control • Lamp Ballast • Lamp Ballast • Line Off Line Switcher • Off Switcher • Gate Driver • Gate Driver Cross Section TS700V Cross Section TS700V Cross-Section TS700V Electron Microscope View Driftzone Driftzone Body/Sub Body/Sub Source Source TiTiN PPSD PPSD Gate Gate Drain Met 2 Met 2 Met 1 Met 1 SIROX/BCM SIROX/BCM TiTiN HV GATE HV GATE NCON Drain NCON PRES PRES SVPWELL SVPWELL NLDD NLDD NPSD NPSD SVNWELL SVNWELL P-Substrate P-Substrate TSI Semiconductors, 7501 Foothills Blvd., Roseville, CA 95747 www.tsisemi.com [email protected] Headquarters: TELEFUNKEN Semiconductors GmbHGmbH & Co. & KG, Theresienstraße 2, D-74072 Heilbronn Headquarters: TELEFUNKEN Semiconductors Co. KG, Theresienstraße 2, D-74072 Heilbronn Phone: +49 71+49 31 71 / 67310,/ Fax: 31 71 / 6731 29/ 67 33 29 33 Phone: 67 0,+49 Fax:71+49 USA Office: TELEFUNKEN Semiconductors USA, 4433 Drive, Drive, San Jose, 95134 USA Office: TELEFUNKEN Semiconductors USA,Fortran 4433 Fortran SanCA Jose, CA 95134 PhonePhone +1 408+1/ 538 00,38 Fax: 408+1 / 538 03 38 03 408 38 / 538 00,+1 Fax: 408 38 / 538 Technology Parameters characteristic details Minimum feature size Substrate Isolation Well construction Gate Oxides Metallization Mask Levels 0.8 mm bulk <100> p-type junction based, 1 mm LOCOS NWELL / PWELL 17.5 nm / 45 nm 2 metals 21+ (depending on options) Electrical Device Parameters device Vth Rdson Idsat Vdsmax 700V NMOS enhancement 700V NMOS depletion NDMOS PDMOS 5V NCMOS 5V PCMOS 20V NCMOS high-side capable 20V PCMOS high-side capable 2 -3 0.8 -0.8 1 -1 2 -1.5 <45 (A* > 0.55mm2) <45 (A* > 0.55mm2) <0.1 <0.4 <0.25 <0.3 >25 >25 >250 >100 350 150 >180 >200 700 700 >30V 45V 10 10 50 50 device VPNP Beta Vearly VCE max >20 >70 50 *A = Area CADENCE Process Design Kit Technology specific content Schematic Symbols CDF Simulation (Spectre) Models and Callback Fixed Cells Parameterized Cells Technology Specific Setup Verification DRC LVS PEX Flow Step/Tool Schematic Design Entry COMPOSER Simulation Spectre Analog Artist Cell- Block- and Chip Physical Design Virtuoso XL Cell- Block- and Chip Verification DIVA/ASSURA/CALIBRE TSI Semiconductors, 7501 Foothills Blvd., Roseville, CA 95747 www.tsisemi.com [email protected] About TSI Semiconductors TSI Semiconductors offers World Class Analog & Mixed Signal Foundry Processes and Services for RF, Power Management, High Voltage, and High Temperature Automotive Applications. TSI Semiconductors' experienced engineering teams also excel at installing customer-specific processes to meet our customers' requirements in Analog & Mixed Signal applications. The complete array of services provided by TSI Semiconductors can take any set of specifications and create a totally transparent turnkey solution, from chipset development to fully qualified and packaged products. Headquarters: TSI Semiconductors 7501 Foothills Blvd. Roseville, CA 95747 (916)786-3900 Visit us online at www.tsisemi.com or drop us a line at [email protected] TSI Semiconductors, 7501 Foothills Blvd., Roseville, CA 95747 www.tsisemi.com [email protected]
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