xR SiC Series... UJ2D1250Z Die Form

xR SiC Series...
50A - 1200V SiC Schottky Diode...
UJ2D1250Z Die Form...
Features
4.25mm
175°C maximum operating junction temperature
Extremely fast switching not dependent on
temperature
Essentially no reverse or forward recovery
Anode Pad
Opening
4.56mm
4.56mm
Positive temperature coefficient for safe operation
and ease of paralleling
Typical Applications
Power converters
Industrial motor drives
Switching-mode power supplies
Power factor correction modules
4.25mm
Part Number
Anode Metal
Cathode Metal
Packaging
UJ2D1250Z
Al (5mm)
Ti/Ni/Au
(0.07/0.1/0.1mm)
Die on tape
Descriptions
United Silicon Carbide, Inc offers the xR series of high-performance SiC Schottky diodes. With zero reverse
recovery charge and 175°C maximum junction temperature, USCI’s diodes are ideally suited for highfrequency and high-efficiency power systems with minimum cooling requirements.
Maximum Ratings
Parameter
DC Blocking Voltage
Symbol
VR
Repetitive Peak Reverse Voltage, Tj=25°C
Maximum DC Forward Current (1)
Non-Repetitive Forward Surge Current
Non-Repetitive Avalanche Energy (1)
Maximum Junction Temperature
(1)
Test Conditions
VRRM
Units
V
1200
V
IF
TC = 137°C
50
A
IFSM
TC = 25°C, 8.3ms
Half Sine Pulse
400
A
EAS
Tj = 25°C, L = 10mH,
Ipk=9A, VDD=100V
426
mJ
175
°C
-55 to 175
°C
TJ,max
TSTG, TJ
Storage and Operation Temperature
(1)
Assumes a maximum junction-to-case thermal resistance of 0.25°C/W.
Rev 1.00
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Value
1200
1
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xR SiC Series...
50A - 1200V SiC Schottky Diode...
UJ2D1250Z Die Form...
Electrical Characteristics
TJ = +25°C unless otherwise specified
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Total Capacitive Charge
QC
Total Capacitance
Test Conditions
Value
Typ
1.5
IF = 50A, TJ = 25°C
Min
-
IF = 50A, TJ =175°C
-
2.5
3
VR=1200V, Tj=25°C
-
20
600
VR=1200V, TJ=175°C
-
100
1800
C
VR=600V, IF=30A,
di/dt=480A/ms
VR=1V, f=1MHz
2500
VR=300V, f=1MHz
250
VR=600V, f=1MHz
178
Max
1.7
Units
V
mA
158
nC
pF
Typical Performance
100
1.E-03
10-3
90
- 55°C
80
25°C
Forward Current, IF (A)
Reverse Current, IR (A)
1.E-04
10-4
150°C
10-5
1.E-05
175°C
10-6
1.E-06
10-7
1.E-07
10-8
1.E-08
200
70
60
50
- 55°C
40
25°C
30
100°C
20
150°C
10
175°C
0
400
600
800
1000
Reverse Voltage, VR (V)
1200
Figure 1 Typical reverse characteristics
Rev 1.00
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0
1
2
3
Forward Voltage, VF (V)
4
Figure 2 Typical forward characteristics
2
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xR SiC Series...
50A - 1200V SiC Schottky Diode...
UJ2D1250Z Die Form...
3500
Capacitance, C (pF)
3000
2500
2000
1500
1000
500
0
0.1
1
10
100
Reverse Voltage, VR (V)
1000
Figure 3 Capacitance vs. reverse voltage
Mechanical Characteristics
Parameter
Die Dimensions (L x W)
Top Anode Pad Opening (L x W)
Wafer Size
Anode Metallization (Al)
Cathode Metallization (Ti/Ni/Au)
Die Thickness
Typical Value
4.56 x 4.56
4.25 x 4.25
100
5
0.07/0.1/0.1
150
Units
mm
mm
mm
mm
mm
mm
Disclaimer
United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and
technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any
errors or inaccuracies within.
Information on all products and contained herein is intended for description only. No license, express or implied, to any
intellectual property rights is granted within this document.
United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon
Carbide, Inc. products and services described herein.
Rev 1.00
http://www.unitedsic.com
3
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