Univeersity of California C at Berkeley College of Engineering Mechanical Eng gineering Departmeent ME1 118, Spring 2015 2 L Liwei Lin Prob blem Set #11 Due Feb b. 5 (Thursd day) Probllem 1 (Moore’s Law) On Ap pril 13, 2005,, Gordon Moo ore himself sttated in an intterview that M Moore’s law ccannot be sustaiined indefiniteely. Using Moore’s M law an nd available eempirical dataa you can findd as recent ass possib ble, calculate the year in which w the size of a transistoor will be the size of a singgle atom. Do you expect this to occur o in yourr lifetime? (Y You are encouuraged to readd more on thiss issue such aas ore’s Law” in Wikipedia. Please P specify y the foundatiions/assumpttions of your ccalculations) “Moo Probllem 2 (Sensittivity) We diiscussed abou ut the “hot-wiire” sensor in class withoutt going into ddetail analyses. Let’s assum me that using micro-machin m ning processees, we can maake a “hot-wirre” sensor of 1μm in diameeter and 5μm in length. While W if we usee nano-machiining process,, one can makke a “hotwire” sensor of 1nm m in diameterr and 5μm in length. If thee materials prroperties in booth cases are the saame, you are asked a to calcu ulate the ratio o of sensitivityy for the two cases – please make all necessary other asssumptions. Probllem 3 (DNA)) We mentioned m DN NA briefly in the t class and this is a follo w-up questioon. A host on a radio program stated thaat one gram off DNA has the ability to sttore as much iinformation aas 1 trillion CDs. Is this true? (Please specify the foundaations/assumpptions of youur calculationss) Probllem 4 (MOSF FET) The diagram d show ws a standard MOSFET. M (1) Draw the crross-sectionall view diagram m in the areas underr the two dash h lines. (2) Asssuming that that t the drawiing in scale annd the minim mum feature size iss 45nm for th he gate length. Calculate how many MO OSFET can bee placed in ann area of 1”x11”