UMF9N Transistors Power management (dual transistors) UMF9N 2SC5585 and 2SK3019 are housed independently in a UMT package. 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6) 0.2 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 0.65 !External dimensions (Units : mm) !Application Power management circuit ROHM : UMT6 EIAJ : SC-88 !Equivalent circuits (3) (2) 0.1Min. 0.9 0.7 0~0.1 !Structure Silicon epitaxial planar transistor 0.15 2.1 Each lead has same dimensions (1) Tr1 Tr2 (4) (5) (6) !Packaging specifications Type Package Marking Code Basic ordering unit (pieces) UMF9N UMT6 F9 TR 3000 1/5 UMF9N Transistors !Absolute maximum ratings (Ta=25°C) Tr1 Limits Symbol 15 VCBO VCEO 12 VEBO 6 IC 500 Collector current ICP 1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg −55~+150 Range of storage temperature Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Unit V V V mA A mW °C °C ∗1 ∗2 ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Tr2 Symbol Limits Parameter VDSS 30 Drain-source voltage VGSS ±20 Gate-source voltage ID 100 Continuous Drain current 200 IDP Pulsed IDR 100 Continuous Reverse drain current IDRP 200 Pulsed Total power dissipation 150(TOTAL) PD Tch 150 Channel temperature Tstg −55~+150 Range of storage temperature Unit V V mA mA mA mA mW °C °C ∗1 ∗1 ∗2 ∗1 PW≤10ms Duty cycle≤50% ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. !Electrical characteristics (Ta=25°C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 12 15 6 − − − 270 − − Typ. − − − − − 100 − 320 7.5 Max. − − − 100 100 250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=1mA IC=10µA IE=10µA VCB=15V VEB=6V IC=200mA, IB=10mA VCE=2V, IC=10mA VCE=2V, IE=−10mA, f=100MHz VCB=10V, IE=0mA, f=1MHz Symbol IGSS V(BR)DSS IDSS VGS(th) Min. − 30 − 0.8 − − 20 − − − − − − − Typ. − − − − 5 7 − 13 9 4 15 35 80 80 Max. ±1 − 1.0 1.5 8 13 − − − − − − − − Unit µA V µA V Ω Ω ms pF pF pF ns ns ns ns Conditions VGS=±20V, VDS=0V ID=10µA, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100µA ID=10mA, VGS=4V ID=1mA, VGS=2.5V VDS=3V, ID=10mA Tr2 Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate-threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time RDS(on) |Yfs| Ciss Coss Crss td(on) tr td(off) tf VDS=5V, VGS=0V, f=1MHz ID=10mA, VDD 5V, VGS=5V, RL=500Ω, RGS=10Ω 2/5 UMF9N Transistors 0.2 Ta=25° 10 0.4 0.6 0.8 1.0 1.2 1.4 1 10 BASE TO EMITTER VOLTAGE : VBE (V) Ta=125°C 25°C −40°C 10 1 10 100 1000 1000 IE=0A f=1MHz Ta=25°C Cib 1 0.1 Cob 1 10 Ta=−40°C Ta=25°C 1000 Ta=125°C 100 10 1 10 100 100 EMITTER TO BASE VOLTAGE : VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Ta=25°C Pulsed 100 IC/IB=50 10 IC/IB=20 IC/IB=10 1 1 1000 10 100 1000 COLLECTOR CURRENT : IC (mA) 1000 VCE=2V Ta=25°C Pulsed 100 10 1 1 10 100 1000 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) 100 10 1000 IC/IB=20 Pulsed COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) BASER SATURATION VOLTAGE : VBE (sat) (mV) 100 1 100 10000 IC/IB=20 Pulsed Fig.5 Base-emitter saturation voltage vs. collector current Fig.6 Gain bandwidth product vs. emitter current 10 TRANSITION FREQUENCY : IC (A) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Fig.1 Grounded emitter propagation characteristics 1000 Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) Ta=−40°C 100 1 0 Fig.2 DC current gain vs. collector current Ta=25°C 1000 TRANSITION FREQUENCY : fT (MHz) DC CURRENT GAIN : hFE C Ta= −40° C °C 1 VCE=2V Pulsed Ta=125°C 100 10 COLLECTOR CURRENT : IC (mA) 1000 VCE=2V Pulsed Ta=12 5 COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) !Electrical characteristic curves Tr1 Ta=25°C Single Pulsed 1 10ms 100ms 1ms DC 0.1 0.01 0.001 0.01 0.1 1 10 100 EMITTER CURRENT : VCE (V) Fig.8 Safe operation area 3/5 UMF9N Transistors 20m 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 0.2m 0.1m 0 1 3 2 1.5 1 0.5 0 −50 −25 4 VGS=2.5V Pulsed 10 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) Ta=−25°C 25°C 75°C 125°C 0.01 0.005 0.002 0.0005 0.001 0.002 0.005 0.01 0.02 10 5 2 1 0.5 0.001 0.002 5 ID=0.05A 10 15 0.05 0.1 0.2 0.5 DRAIN CURRENT : ID (A) Fig.15 Forward transfer admittance vs. drain current 200m 9 50m Ta=125°C 75°C 25°C −25°C 5m 2m 1m 0.5m 0.2m 0.1m 0 0.5 1 0.5 7 ID=100mA 6 ID=50mA 5 4 3 2 1 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) 20m 10m 0.2 VGS=4V Pulsed 8 0 −50 −25 20 VGS=0V Pulsed 100m 0.05 0.1 Fig.11 Static drain-source on-state resistance vs. drain current ( Ι ) ID=0.1A 5 0.005 0.01 0.02 DRAIN CURRENT : ID (A) Fig.13 Static drain-source on-state resistance vs. gate-source voltage REVERSE DRAIN CURRENT : IDR (A) VDS=3V Pulsed 0.02 0.001 0.0001 0.0002 Ta=125°C 75°C 25°C −25°C 20 GATE-SOURCE VOLTAGE : VGS (V) 0.2 0.05 125 150 10 0 0 0.5 Fig.12 Static drain-source on-state resistance vs. drain current ( ΙΙ ) 0.1 100 Ta=25°C Pulsed DRAIN CURRENT : ID (A) 0.5 75 15 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 20 50 Fig.10 Gate threshold voltage vs. channel temperature Fig.9 Typical transfer characteristics Ta=125°C 75°C 25°C −25°C 25 0 VGS=4V Pulsed CHANNEL TEMPERATURE : Tch (°C) GATE-SOURCE VOLTAGE : VGS (V) 50 50 VDS=3V ID=0.1mA Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) DRAIN CURRENT : ID (A) 50m 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VDS=3V Pulsed 100m 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.16 Reverse drain current vs. source-drain voltage ( Ι ) Fig.14 Static drain-source on-state resistance vs. channel temperature REVERSE DRAIN CURRENT : IDR (A) 200m GATE THRESHOLD VOLTAGE : VGS(th) (V) Tr2 200m Ta=25°C Pulsed 100m 50m 20m VGS=4V 10m 0V 5m 2m 1m 0.5m 0.2m 0.1m 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.17 Reverse drain current vs. source-drain voltage ( ΙΙ ) 4/5 UMF9N Transistors 50 Ciss 10 5 Coss Crss 2 1 Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed tf 500 SWITHING TIME : t (ns) 20 CAPACITANCE : C (pF) 1000 Ta=25°C f=1MHZ VGS=0V td(off) 200 100 50 20 tr td(on) 10 5 0.5 0.1 0.2 0.5 1 2 5 10 20 50 2 0.1 0.2 0.5 1 2 5 10 20 50 100 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA) Fig.18 Typical capacitance vs. drain-source voltage Fig.19 Switching characteristics 5/5
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