原子層堆積法を用いたナノ電子デバイス

ཎᏊᒙሁ✚ἲ䜢⏝䛔䛯䝘䝜㟁Ꮚ䝕䝞䜲䝇
Keyword : ALDᡂ⭷ᢏ⾡䚸High-k⤯⦕⭷䚸䝯䝰䝸䚸䝖䝷䞁䝆䝇䝍
⊂❧⾜ᨻἲே㻌 ≀㉁䞉ᮦᩱ◊✲ᶵᵓ
ᄂᆮỉ
Ꮡ୎
䝇䝬䞊䝖䝁䝭䝳䝙䝔䜱䞊䜢ᐇ⌧䛩䜛䛯䜑䛻䛿䚸ከ䛟䛾᝟ሗ㔞䜢ฎ⌮䛩䜛䛯䜑䛾ከᵝ䛺㟁Ꮚ䝕䝞
䜲䝇䛜ᮃ䜎䜜䚸䛭䛾୰䛻䛿㧗㞟✚໬䛧䛯䝘䝜㟁Ꮚ䝕䝞䜲䝇䜒ྵ䜎䜜䛶䛔䜛䚹䝘䝜㟁Ꮚ䝕䝞䜲
䝇䛿3ḟඖᵓ㐀䛜୺ὶ䛻䛺䜚䚸㟁ᴟཬ䜃⤯⦕⭷䜒䝘䝜䜸䞊䝎䞊䛷ไᚚ䛩䜛ᚲせ䛜䛒䜛䚹
ᄂᆮỉ
ཀྵẟ
㟁ᴟ⭷ཬ䜃⤯⦕⭷䛾ᙧᡂ䛻⏝䛔䜙䜜䛶䛝䛯ᚑ᮶䛾ᡂ⭷ᢏ⾡䛻௦䜟䛳䛶䚸ཎᏊᒙሁ✚ᒙ
(ALD)ἲ䛿䚸䜸䞁䜾䝇䝖䝻䞊䝮䜸䞊䝎䛷⭷ཌไᚚ䛷䛝䚸䛧䛛䜒ᐊ 䛷䜒⭷ᙧᡂ䛷䛝䜛฼Ⅼ䜢
᭷䛧䛶䛔䜛䚹ᮏ◊✲䛷䛿䚸ప ᗘ䛾ALDἲ䛷స〇䛧䛯䝖䝷䝆䝇䝍⏝High-k䝀䞊䝖⤯⦕⭷ཬ䜃
䜸䞊䝹High-kᒙ䛾䝏䝱䞊䝆䝖䝷䝑䝥䝯䝰䝸䞊䛾≉ᛶ䛻䛴䛔䛶ሗ࿌䛩䜛䚹
இέᇢᄂᆮἚἦἕἁἋ
䝖䝷䞁䝆䝇䝍⏝High-k⭷
"
Fresh
Pt
Program
50
!
40
(Ta/Nb)Ox
E = 15MV/cm
"
#
Voltage (V)
Al2O3
P-Si
$
Anatase-TiO2
30
20
(Ta/Nb)Ox HfAlO
10
0
ཎᏊᒙሁ✚ἲ
⾲㠃྾╔཯ᛂᚊ㏿
ཎᩱ䜺䝇
HfO2C)
Target
Al2O3
k- value
Capacitance (PF/cm2)
䝏䝱䞊䝆䝖䝷䝑䝥䝯䝰䝸
HfSiO
HfO2a) HfO2
b)
Al2O3
a) Amorphous, b) Monoclinic, c) Cubic
0
200
400
600
800
1000 1200
Process temperature (ºC)
ཎᏊᒙሁ✚ἲ䜢⏝䛔䛶䚸ప ᗘ䛷㧗ㄏ㟁⋡䛺
(Ta/Nb)Oxཬ䜃Anatase-TiO2⭷䜢ᙧᡂ䛷䛝䛯䚹
䜸䞊䝹High-kᒙ䛾䝏䝱䞊䝆䝖䝷䝑䝥䝯䝰䝸䛷䚸Ⰻ
ዲ䛺䝥䝻䜾䝷䝮≉ᛶ䛜ᚓ䜙䜜䛯䚹
ALD⭷
ᡂ⭷㏿ᗘ䠖 䡚1 nm/cycle
ᡂ⭷ ᗘ䠖 r. t. 䡚 300 qC
ᇶᯈ
૨ᴾ ྂᴾ
㻌 㻌T. Nabatame et al., J. Vac. Sci. Technol. B 32 (2014) 03D121-1.
㻌 T. Nabatame et al., Thin Solid Films 520 (2012) 3387-3391.
㻌 S. Aikawa, T. Nabatame, K. Tsukagoshi, Appl. Phys. Lett. 103 (2013) 172105-1.
ࣖဇЎ᣼ƱʻࢸƷ‫᧏ޒ‬
ܱဇ҄ǁӼƚƨᛢ᫆
z㻌 ᚑ᮶䛾䝅䝸䝁䞁ཬ䜃䜺䝷䝇ᇶᯈ䛾㟁Ꮚ䝕䝞䜲䝇䛾௚ z㻌 ప䝁䝇䝖䛷኱㠃✚ᙧᡂ䛜ྍ⬟䛸䛺䜛ALDཎᩱཬ䜃
䛻䚸䝋䞊䝷䞊䝉䝹䛾High-k䝟䝅䝧䞊䝅䝵䞁⭷ཬ䜃䝣䝺
ALD⿦⨨䛾㛤Ⓨ
䜻䝅䝤䝹ᇶᯈ䛾᭷ᶵ䝕䝞䜲䝇䛜ᣲ䛢䜙䜜䜛
z㻌 ᭦䛺䜛䝯䝰䝸䠃䝖䝷䞁䝆䝇䝍≉ᛶྥୖ䛾䛯䜑䛻䚸㧗
z㻌 ≉チ1௳
ㄏ㟁⋡䛺High-kᮦᩱཬ䜃㟁ᴟᮦᩱ䛾㛤Ⓨ
MANA䝣䜯䜴䞁䝗䝸㻌 ⏕⏣┠㻌 ಇ⚽
E-mail : NABATAME.Toshihide䖃nims.go.jp
URL : http://www.nims.go.jp/nfs/2dnano㻌 㻌 㻌 㻌 㻌 㻌 㻌 㻌
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