⤖ᬗḞ㝗䛻䜘䜛䜾䝷䝣䜵䞁䛾㟁Ẽఏᑟไᚚ
Keyword : 䜾䝷䝣䜵䞁䚸㟁Ẽఏᑟไᚚ䚸㟁⏺ຠᯝ䚸䜲䜸䞁↷ᑕ
⊂❧⾜ᨻἲே㻌 ≀㉁䞉ᮦᩱ◊✲ᶵᵓ
ᄂᆮỉ
Ꮡ୎
ཎᏊᒙཌ䛥䛾ᴟⷧ⭷䛾㟁Ẽఏᑟయ䛷䛒䜛䜾䝷䝣䜵䞁䛿ᵝ䚻䛺䜶䝺䜽䝖䝻䝙䜽䝇ᛂ⏝䛜ᮇᚅ䛥
䜜䜛䛜䚸䝞䞁䝗䜼䝱䝑䝥䜢ᣢ䛯䛺䛔䛣䛸䛛䜙䚸㟁ὶ䛾ὶ䜜䜔䛩䛥䛾㟁Ẽⓗ䛺ไᚚ䛜㞴䛧䛔䛣䛸
䛜䝪䝖䝹䝛䝑䜽䛸䛺䛳䛶䛔䜛䚹
ᄂᆮỉ
ཀྵẟ
䜾䝷䝣䜵䞁䛾㟁Ẽఏᑟ䜢㟁Ẽⓗ䛻ไᚚྍ⬟䛻䛩䜛䚹䛭䛾䛯䜑䛻䚸䜾䝷䝣䜵䞁䛻ᑐ䛩䜛䜲䜸䞁
↷ᑕ䛻䜘䜚ཎᏊ䝃䜲䝈䛾⤖ᬗḞ㝗䜢ᑟධ䛧䚸2ḟඖ㟁Ꮚ⣔䛾ᒁᅾ≧ែ䜢⌧ฟ䛥䛫䜛䛣䛸䛷䚸
䜶䝛䝹䜼䞊䜼䝱䝑䝥䜢⏕ᡂ䛩䜛䚹᭦䛻䚸䛣䛾ᢏ⾡䜢⏝䛔䛯䝖䝷䞁䝆䝇䝍䛾ືస䜢ᐇド䛩䜛䚹
இέᇢᄂᆮἚἦἕἁἋ
ཎᏊ1ᒙศ䛾ཌ䛥䛧䛛䛺䛔2ḟඖ㟁Ẽఏᑟయ䛷䛒䜛䜾䝷䝣䜵䞁䛿䚸ᴟ䜑䛶㧗
䛔㟁Ⲵ⛣ືᗘ䜔チᐜ㟁ὶᐦᗘ䛾㧗䛥䚸ᙉ䛔ᶵᲔⓗᙉᗘ䚸㏱᫂ᗘ䛾㧗䛥➼䛾
≉㛗䛻䜘䜚ᑗ᮶䛾䜶䝺䜽䝖䝻䝙䜽䝇ᮦᩱ䛸䛧䛶㧗䛔ὀ┠䜢㞟䜑䛶䛝䛯䚹䛧䛛䛧
䛺䛜䜙䚸䝣䜵䝹䝭䜶䝛䝹䜼䞊௜㏆䛻䝞䞁䝗䜼䝱䝑䝥䛜䛺䛔䛯䜑䛻䚸䝅䝸䝁䞁➼䛾
༙ᑟయ䛾䜘䛖䛺㟁⏺ຠᯝ䛻䜘䜛㟁ὶ䜸䞁䞉䜸䝣ືస䛜㞴䛧䛔䛣䛸䛜䚸䜾䝷䝣䜵
䞁䛾䜶䝺䜽䝖䝻䝙䜽䝇ᛂ⏝䛻䛚䛔䛶᭱኱䛾㞀ቨ䛸䛺䛳䛶䛝䛶䛔䛯䚹
䛣䛾ၥ㢟䜢ᅇ㑊䛩䜛䛯䜑䛻䚸䜾䝷䝣䜵䞁䛻ᑐ䛧䛶㧗㟁ᅽ䛷ຍ㏿䛥䜜䛯䝦䝸䜴
䝮䜲䜸䞁䜢↷ᑕ䛧䛶⤖ᬗḞ㝗䜢ᑟධ䛩䜛䠄ᅗ1䠅䛸䛔䛖ᡃ䚻䛾⊂⮬䛾ᢏ⾡䜢㛤
Ⓨ䛧䛶䛝䛯䚹䛣䛾ᢏ⾡䛷䛿䚸ᑟධ䛥䜜䛯Ḟ㝗䛻䜘䜛㟁Ꮚ䛾ᩓ஘䛾⤖ᯝ䚸㟁Ꮚ
䛜✵㛫ⓗ䛻ᒁᅾ䛩䜛⌧㇟䜢฼⏝䛧䛶䚸㟁Ẽఏᑟ䛜ᢚไ䛥䜜䜛䜶䝛䝹䜼䞊ᖏ
䠄䜼䝱䝑䝥䠅䜢⏕ᡂ䛩䜛䠄ᅗ2䠅䚹䛣䛾䜶䝛䝹䜼䞊䜼䝱䝑䝥䛻䜘䜚䚸䝀䞊䝖ไᚚ䛷㟁
ὶ䛾䜸䞁䞉䜸䝣ືస䛜ᐊ 䛷䜒ྍ⬟䛷䛒䜛䛣䛸䜢ᐇド䛧䛯䚹
䜶䝺䜽䝖䝻䝙䜽䝇䜈䛾ᛂ⏝౛䛸䛧䛶䚸ᅗ3䛻♧䛩䜲䜸䞁↷ᑕ䝏䝱䝛䝹䜢᭷䛩䜛
䝕䝳䜰䝹䝀䞊䝖ᆺ䝖䝷䞁䝆䝇䝍䜢ヨస䛧䚸䛭䛾ືస䜢ᐇド䛧䛯䚹䛣䛾⣲Ꮚ䛿2䛴
䛾䝖䝑䝥䝀䞊䝖䜢᭷䛧䛶䛚䜚䚸䝀䞊䝖㟁ᅽ䛻䜘䜛䜶䝛䝹䜼䞊䝞䞁䝗᧯స䛷䜼䝱䝑
䝥䜢㟁Ⲵ㍺㏦䛾㞀ቨ䛸䛧䛶ᚑ᮶ᆺᵓ㐀䛾ሙྜ䜘䜚䜒᭷ຠ䛻స⏝䛥䛫䜛䛣䛸䛜
ྍ⬟䛸䛺䜛䚹᭦䛻䚸୍᪉䛾䝀䞊䝖㟁ᅽ䛾ᴟᛶ䛻䜘䜚䝖䝷䞁䝆䝇䝍ᴟᛶ䠄N/Pᆺ䠅
䜢㟁Ẽⓗ䛻཯㌿ྍ⬟䛺⣲Ꮚ䛜ᐇ⌧䛧䛯䚹
ᮏᢏ⾡䛷䛿䚸䜾䝷䝣䜵䞁䜢ᚤ⣽ຍᕤ䛩䜛䛣䛸䛺䛟኱䛝䛺䝅䞊䝖䛾䜎䜎䝖䝑䝥䝎
䜴䞁ຍᕤ䛷ᢅ䛖䛣䛸䛜ྍ⬟䛷䛒䜚䚸ᚑ䛳䛶᪤Ꮡ䛾䝖䝷䞁䝆䝇䝍ຍᕤ䝥䝻䝉䝇䛾
⠊ᅖෆ䛷స〇ྍ⬟䛸䛔䛖≉㛗䛜䛒䜛䚹䜎䛯䚸⣲Ꮚస〇ᇶᯈ䜢௵ព䛻㑅ᢥྍ
⬟䛷䛒䜚䚸௚䛾ཎᏊⷧ⭷䛸䛾✚ᒙ䛻䜘䜛᭦䛺䜛Ⓨᒎ䛾ྍ⬟ᛶ䛜኱䛝䛔䚹
૨ᴾ ྂᴾ
He+
ᅗ䠍
E
Extended
gap
Localized
Extended
ᅗ䠎
DOS
He+
Top Gate
Drain
Source
ᅗ䠏
㻌 㻌ACS Nano 7, p.5694 (2013).
㻌 Technical Digest of IEEE IDEM2012,㻌 p.72.
㻌 䝟䝸䝔䜱 Vol.28, No.5, p.32 (2013ᖺ5᭶ྕ); 䝟䝸䝔䜱 Vol.28, No.10, p.40 (2013ᖺ10᭶ྕ).
LJƱNJ
ܱဇ҄ƷႸ೅
z㻌
z㻌
z䜲䜸䞁↷ᑕ䜾䝷䝣䜵䞁䜢䝏䝱䝛䝹䛻ᛂ⏝䛧䛯䝕䝳䜰䝹
z㻌
䝀䞊䝖ᆺ䝖䝷䞁䝆䝇䝍䛷䚸㟁Ẽⓗ䛻ᴟᛶไᚚྍ⬟䛺䝖䝷 z㻌
䞁䝆䝇䝍ືస䜢ᐇ⌧䛧䛯
z䜾䝷䝣䜵䞁䜈䛾䜲䜸䞁↷ᑕ䛷⤖ᬗḞ㝗䜢ᑟධ䛧䚸㟁⏺
ຠᯝ䛻䜘䜛㟁ὶไᚚ䛻ᡂຌ䛧䛯
ᴟⷧ⭷䝖䝷䞁䝆䝇䝍
䝻䝆䝑䜽LSI
㏱᫂㟁ᴟ
≀⌮䞉໬Ꮫ䝉䞁䝃
䝟䜲㟁Ꮚ䜶䝺䜽䝖䝻䝙䜽䝇䝴䝙䝑䝖㻌 䝟䜲㟁Ꮚ䜶䝺䜽䝖䝻䝙䜽䝇䜾䝹䞊䝥㻌 ୰ᡶ㻌 ࿘
E-mail : NAKAHARAI.Shu䖃nims.go.jp
URL : http://www.nims.go.jp/pi-ele_g/member/nakaharai.html㻌 㻌 㻌 㻌 㻌 㻌 㻌 㻌
— 231 —

原子層堆積法を用いたナノ電子デバイス

BP400600表[更新済み]