Home Search Collections Journals About Contact us My IOPscience A simple approach to the synthesis of BCN graphene with high capacitance This content has been downloaded from IOPscience. Please scroll down to see the full text. 2015 Nanotechnology 26 045402 (http://iopscience.iop.org/0957-4484/26/4/045402) View the table of contents for this issue, or go to the journal homepage for more Download details: IP Address: 148.251.237.47 This content was downloaded on 02/02/2015 at 04:35 Please note that terms and conditions apply. Nanotechnology Nanotechnology 26 (2015) 045402 (7pp) doi:10.1088/0957-4484/26/4/045402 A simple approach to the synthesis of BCN graphene with high capacitance Shuo Dou1, Xiaobing Huang2, Zhaoling Ma1, Jianghong Wu1 and Shuangyin Wang1 1 State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, People’s Republic of China 2 College of Chemistry and Chemical Engineering, Hunan University of Arts and Science, Changde, People’s Republic of China E-mail: [email protected] Received 27 July 2014, revised 20 November 2014 Accepted for publication 27 November 2014 Published 6 January 2015 Abstract Boron and nitrogen co-doped graphene (BCN graphene) was prepared through a simple thermal annealing approach in the presence of a single compound, melamine diborate. The as-prepared samples were characterized by scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, Raman spectra and electrochemical techniques. The BCN graphene shows significantly enhanced specific capacitance due to boron and nitrogen codoping, which permits higher overall doping levels. S Online supplementary data available from stacks.iop.org/NANO/26/045402/mmedia Keywords: graphene, doping, supercapacitor (Some figures may appear in colour only in the online journal) 1. Introduction addition to nitrogen, boron doped carbon materials were also reported as the electrode materials of supercapacitors, showing enhanced performance [7, 8, 15]. Our previous work showed that N and B co-doping of vertically aligned carbon nanotubes could effectively enhance the specific capacitance due to the synergistic capacitive effect [8]. Graphene with sp2 hybridized carbon atoms has attracted significant attention due to its unique properties and promising applications in a variety of fields including energy storage and conversion, sensors, and electronic devices [16–19]. For supercapacitors, various types of graphene have been investigated to improve the specific capacitance. Fan et al treated graphite oxide with a slow heating rate using Mg(OH)2 nanosheets as template to get a supercapacitor electrode materials with ultrahigh specific gravimetric and volumetric capacitances of 456 F g−1 and 470 F cm−3 [20]. Wang et al prepared MnO2-graphene foam and CNT-graphene foam by solution casting and subsequent electrochemical methods to assemble flexible all-solid-state asymmetric supercapacitor. The asymmetric supercapacitor can be cycled reversibly in a high-voltage region of 0–1.8 V and exhibit high energy density, remarkable rate capability, reasonable cycling Supercapacitors, having a high power density, quick charge/ discharge (CD) rate and long life-cycle, are promising power sources for portable systems and automotive applications [1]. Supercapacitance arises normally from the electrical doublelayer charge storage with or without additional pseudocapacitance [2–6]. Due to their high surface area and excellent conductivity, carbon nanomaterials such as carbon nanotube, graphene and ordered mesoporous carbon are considered as typical electrode materials for supercapacitors and much attention has been paid to improving their structure and properties for supercapacitor applications [2–6]. Both theoretical calculations and experimental characterizations have proved that chemical doping with foreign atoms such as nitrogen element can achieve this goal [7–14]. It has been assumed that nitrogen doping changes the electron donor/ acceptor characteristics of carbon depending on the type of the groups formed between the nitrogen and carbon atoms, contributing to the enhancement of capacitance property [8]. The heteroatoms on carbon materials would provide acid/base characteristics for improved pseudocapacitance [11]. In 0957-4484/15/045402+07$33.00 1 © 2015 IOP Publishing Ltd Printed in the UK S Dou et al Nanotechnology 26 (2015) 045402 performance and excellent flexibility [21]. Heteroatom doping of graphene could further extend its potential applications. Of the most typical materials, nitrogen doped graphene (N-graphene) was prepared through chemical vapour deposition, thermal annealing, hydrothermal treatment, chemical synthesis etc, showing promising supercapacitive performance [7, 10, 11]. Besides, boron doped graphene (B-graphene) was also demonstrated to be a good supercapacitor electrode material. For example, Han et al prepared B-graphene by reduction of graphene oxide (GO) with a borane-tetrahydrofuran under reflux via a one-pot synthesis using a liquid process and was studied as supercapacitor electrode materials, showing enhanced performance over the undoped graphene due to the presence of B [12]. Manthiram et al prepared Bgraphene through a Fried-Ice way for supercapacitor applications [22]. In order to further improve the performance of doped graphene, dual atoms co-doped graphene or carbon nanotubes have been extensively investigated for electrocatalysis and supercapacitor [7, 17, 23–27]. Müllen et al prepared boron and nitrogen co-doped graphene (BCN graphene) in the presence of ammonia boron trifluoride by a hydrothermal method, showing improved supercapacitor performance [7]. Previously, we also prepared BCN graphene by thermally annealing GO with boric acid under the gas flow of ammonia and argon [17]. The as-obtained BCN graphene showed significant electrochemical performance as the efficient metal-free electrocatalysts for oxygen reduction reaction. However, this technique involves the use of toxic ammonia with safety concerns. Therefore, the development of a safe and efficient technique for the preparation of BCN graphene is still a challenge. In this work, we developed a novel thermal annealing method of GO to prepare BCN graphene using a single dopant chemical, melamine diborate, as the B and N source. The schematic is illustrated in figure 1(a). Oda et al [28] have demonstrated that melamine diborate could be applied to prepare BCN compound, which we used for synthesis of BCN graphene in this work. The use of the single B and N precursor simplifies the synthetic process and makes it safe without using ammonia as the N source. For comparison, single atom doped graphene, that is, B-graphene and N-graphene were also prepared in a similar way using boric acid and melamine as the heteroatom sources, respectively. The capacitance behaviour of the as-prepared doped graphene was investigated by cyclic voltammetry and CD techniques and it was found that BCN graphene shows the highest capacitance compared to N-graphene, B-graphene and undoped graphene, contributed by the efficient heteroatom doping. Besides, the BCN graphene also shows excellent rate capability and high durability as the electrode materials for supercapacitors. in ethanol under sonication for 90 min to obtain a homogeneous dispersion. Ethanol was removed by the rotary evaporation. The collected solid mixtures were dried in vacuum oven at 60 °C for 24 h. Finally, the doping process was carried out by annealing GO and melamine diborate at 600, 700, 800, 900 and 1000 °C for 2 h in argon to form BCN graphene (denoted as BCN-600, BCN-700, BCN-800, BCN900, BCN-1000, respectively). The undoped graphene was also prepared under the same condition in the absence of dopants for comparison. Similarly, B-graphene was prepared by thermally annealing GO (100 mg) in the presence of boric acid (508 mg) at 700 °C which was denoted as B-graphene; and N-graphene was prepared by thermally annealing GO (100 mg) in the presence of melamine (492 mg) at 700 °C which was denoted as N-graphene. 2.2. Physical characterizations The morphology of BCN was observed by scanning electron microscope (SEM, Hitachi, S-4800) and transmission electron microscope (TEM, JEOL, JEM-2010). X-ray photoelectron spectroscopic (XPS) measurements were performed on an ESCALAB 250Xi using a monochromic Al x-ray source (200 W, 20 eV). The Raman spectra were collected on a Raman spectrometer (Labram-010) using 632 nm laser. The Brunauer−Emmmett−Teller (BET) specific surface area characterizations of the samples were probed by a nitrogen adsorption−desorption method at 77 K (SSA-4200). 2.3. Electrochemical test All the electrochemical tests including cyclic voltammograms (CVs) and galvanostatic CD were carried out using an electrochemical workstation (CHI 760E, CH Instrument, USA) with a typical three-electrode. A platinum mesh was used as counter electrode and saturated calomel electrode as reference electrode. At first, 5 mg electrode material was added into 1 ml ethanol to get a well dispersed suspension (5 mg ml−1) under sonication. Then, 50 μl nafion solution (5 wt%) as a binder was added into the catalyst suspension. To prepare the electrode, 20 μl catalyst suspension was dropped onto the surface of a pre-polished glassy carbon electrode (GCE). After fully dried at room temperature, the catalyst casted GCE was used as the working electrode to measure its capacitance in 1 M H2SO4 aqueous solution saturated with N2. 3. Results and discussion During the thermal annealing at high temperature, the decomposed B and N could be successfully incorporated into graphene. To investigate the structural morphology of the asobtained BCN graphene, the SEM images were collected for BCN-700, as shown in figure 1(b). It can be seen from figures 1(b) and S1 (in the supplementary data, available at stacks.iop.org/NANO/26/045402/mmedia) that graphene-like nanosheets are observed for BCN graphene, confirming that the doping process reserves the intrinsic morphology of 2. Methods 2.1. Materials preparation GO was prepared by modified Hummers method [29]. GO (100 mg) and melamine diborate (1000 mg) were first mixed 2 S Dou et al Nanotechnology 26 (2015) 045402 a) Annealing GO C Melamine diborate B o c) Intensity / a.u. b) N ID/IG=1.1894 graphene ID/IG=1.2041 B-graphene ID/IG=1.3356 N-graphene ID/IG=1.4003 BCN-700 500 1000 1500 2000 2500 Raman shift / cm-1 3000 Figure 1. (a) Schematic of preparation BCN graphene; (b) SEM image of BCN graphene obtained by thermal annealing at 700 °C; and (c) Raman spectra of BCN graphene, and undoped graphene. graphene, which is also supported by the TEM image in figure S1. The specific surface area of the doped graphene materials were characterized by the BET method. Figure S2 shows the nitrogen adsorption/desorption isotherms of BCN700, B-graphene and N-graphene. The BET specific area of BCN-700 is 84.9 m2 g−1. Compared to B-graphene (76.7 m2 g−1) and N-graphene (99.7 m2 g−1), the BCN-700 exhibits a very similar specific surface area to that of the B, N single-doped graphene samples. Raman spectrum is an efficient tool to investigate the electronic properties of carbon-based materials [30]. In figure 1(c), we collected the Raman spectra of BCN-700, Bgraphene, N-graphene and undoped graphene. As can be seen from the Raman spectra, the D band and G band are located around 1330 cm−1 and 1580 cm−1, respectively. It has been found that the G band arises from the bond stretching of all sp2-bonded pairs, while the D band is associated with the sp3 carbon of defect sites. In the Raman spectra of carbon-based materials, ID/IG is an interesting indicator of the defect level. It can be seen from figure 1(c) that doped graphene shows higher ID/IG ratio than undoped graphene (1.19) owing to the incorporation of defects by B- or/and N-doping. By comparing the ID/IG values of BCN-700 (1.40), N-graphene (1.34), and B-graphene (1.24), it is found that BCN-700 shows the highest ID/IG ratio, indicating more defects generated by the dual-atom co-doping. The BCN graphene obtained at different temperatures was also characterized by Raman to observe the temperature effect on its electronic properties. It can be observed from figure S3 that, as the annealing temperature increases from 600 to 1000 °C, the ID/ IG ratio of BCN graphene decreases from 1.43 to 1.33. The decrease in the ID/IG ratio with the temperature increase may be due to the improved graphitic degree of the BCN graphene caused by reduction effect and ‘self-repairing’ of the graphene layer at higher annealing temperature [33]. To analyze the composition of the as-prepared materials and the chemical states of the key elements (doped heteroatoms) in the materials, XPS was employed. As expected, BCN-700 shows the C, B, and N signals indicating the successful doping of B and N into graphene (figure 2(a)). The presence of an O 1s peak in the BCN-700 is possibly due to the residues of the incompletely removed oxygen-containing functional groups of GO. The XPS survey also gives the contents of B (3.95 atom%) and N (19.73 atom%) in the BCN-700. Correspondingly, 1.72 atom% of B and 9.4 atom% of N has been doped into graphene in the B-graphene and Ngraphene, respectively. It could be observed that the codoping in BCN-700 could significantly increase the doping content of the both B and N by forming the B–N bond. The chemical states of C, N and B in BCN graphene were further investigated with fine-scanned XPS spectra. The XPS C1s spectra given in figure 2(b) clearly show an almost total loss of the oxygen component above 286 eV, while the carbon peak at 284.6 eV becomes more asymmetric and broadened due to B and N incorporation into the sp2 network of graphene upon annealing with melamine diborate [31]. As shown in figure 2(b), the XPS C1s peak could be deconvoluted into five peaks at around 284.0, 284.6, 285.2, 286.4 and 288.0 eV, attributed to C–B, C=C, C–N or C–C, C=O, and O–C=O bonds, respectively. We further examined the B1s XPS peak, as shown in figure 2(c). It could be found that the B1s XPS could be deconvoluted into three sub-peaks, attributed to BC, 3 S Dou et al Nanotechnology 26 (2015) 045402 Figure 2. (a) The survey scan of XPS on BCN graphene, B-graphene, and N-graphene; high resolution of (b) C1s XPS peak; (c) B1s XPS peak and (d) N1s XPS peak of BCN-700. Table 1. XPS analysis of the samples. Samples BCN-600 BCN-700 BCN-800 BCN-900 BCN-1000 B (atom%) N (atom%) 3.08 3.95 2.72 1.04 0.8 21.47 19.73 17.85 6.72 7.89 could be speculated that the reduction effect and ‘selfrepairing’ of the graphene layer at higher annealing temperature increase the graphitic level and make the heteroatoms difficult to dope into graphene layers. The doping of B and N atoms results in an improvement of capacitance to pristine graphene which was confirmed by the electrochemical measurements. CVs were employed to investigate the electrochemical behaviour of BCN-700, Ngraphene, B-graphene, and undoped graphene in 1.0 M H2SO4 aqueous electrolyte solution at a potential interval from 0 to 0.9 V, as shown in figure 3(a). The figure shows the CV curves of different electrodes at a scan rate of 50 mV s−1, from which it could be observed that all the doped graphene electrodes reveal a larger capacitive response than the undoped graphene electrode. Besides, the dual atoms codoped BCN-700 shows the largest capacitive response compared to B-graphene and N-graphene, implying the co-doping of B and N might show enhanced capacitance. It should be pointed out that a more obvious redox couple at 0.38 V of the anodic scan and 0.32 V of the cathodic scan is observed for Bgraphene, which is due to the higher relative percentage of BO species, as confirmed by the XPS characterizations in figure S3(a) [34]. However, the redox couple does not exist in BCN graphene, it may be due to the relative low amount of BN or BCO, and BO bonds. Similarly, for N1s XPS peak, in addition to the pyridinic N, pyrrolic N, and graphitic N, a novel C–N–B bond is observed at around 399.2 eV, as shown in figure 2(d). The above high-resolution XPS analysis confirms that B and N are covalently bonded with C in graphene lattice, and also B and N are also partially bonded (B–N bond) covalently with each other. Also, we have investigated the doping content of B and N atoms at different temperatures. As the annealing temperature increases, the content of B and N atom in BCN graphene samples decreases obviously, as shown in table 1 and figure S5. It has been also demonstrated that oxygen groups in GO were removed at high temperature and the removal process of oxygen provided an active site for heteroatom doping into graphene frameworks [31–33]. And, it 4 S Dou et al Nanotechnology 26 (2015) 045402 Figure 3. (a) CV curves of BCN-700, B-graphene, N-graphene and undoped graphene in 1.0 M H2SO4 electrolyte solution at a scan rate of 50 mV s−1; (b) CV curves of BCN-700 at various scan rates up to 1000 mV s−1. Figure 4. (a) CD curves of BCN-700, B-graphene, N-graphene and undoped graphene in 1.0 M H2SO4 electrolyte solution at a current density of 0.2 A g−1; (b) CD curves of BCN graphene obtained at different annealing temperatures. BO species in BCN graphene, as evidenced by the B1s XPS peak in figure 2(c), which would suppress the Faradaic pseudocapacitance behaviour of the BO species. Figure 3(b) shows the CV curve of BCN-700 electrode at different scan rates from 50 to 1000 mV s−1; it could be observed that the rectangular shape of the CV curve is still kept at such a high scan rate of 1000 mV s−1, due to the unique electronic and surface structure of BCN graphene [3, 13]. In order to obtain the specific capacitance of the electrode materials, the galvanostatic CD curves were collected with the voltage windows the same as for the above CV curves on the four electrode materials. As shown in figure 4(a), the discharging time of the doped graphene is significantly longer than that of undoped graphene, indicating that the heteroatom doping offers a much larger capacitance, which agrees well with the observation with the CV curves. Once again, BCN700 shows longer discharging time, that is, larger capacitance than B-graphene and N-graphene due to the higher doping levels of the B and N co-doping. For the galvanostatic CD, the IR drop of BCN-700 is much smaller than that of Bgraphene and N-graphene, while the undoped graphene shows largest IR drop. The IR drop is caused by the equivalent series resistance, which includes electrode resistance, electrolyte resistance and the interfacial resistance between the electrode and the electrolyte [35]. The smaller IR drop on BCN graphene is attributed to the improved electrode affinity with electrolyte due to the high heteroatom doping level. The specific capacitances of the electrode materials were calculated based on the CD curves in figure 4(a), the specific capacitance for the BCN-700 electrode is 130.7 F g−1 at 0.2 A g−1, which is much higher than N-graphene (111.3 F g−1), B-graphene (82.9 F g−1) as well as undoped graphene (77.4 F g−1). It could be deduced that the heteroatom doping modified the electronic properties and surface properties of graphene, making the BCN graphene samples more accessible to store charges for supercapacitors. In addition, B and N co-doping enables a higher doping level and further enhances the specific capacitance of graphene. We also examined the capacitance performance of BCN graphene prepared at different annealing temperatures, as shown by the CD curves in figure 4(b). It could be found that BCN graphene obtained at 700 °C shows the best capacitance performance over other BCN graphene samples and this is possibly due to the high doping level of B and N atoms in the graphene frameworks. However, it is unanticipated that the BCN graphene obtained at 600 °C shows higher doping level than at 5 S Dou et al Nanotechnology 26 (2015) 045402 Figure 5. (a) Plot of the specific capacitance of BCN-700, B-graphene, N-graphene and undoped graphene against the current loadings; (b) durability testing of BCN-700 at a current density of 5 A g−1. 4. Conclusions 700 °C (table 1), but the specific capacitance of BCN-600 is much lower than that of BCN-700. In order to understand this result, we performed further XPS analysis on the samples, as shown in figure S5(c). We can see from it that all the N1s XPS peaks could be deconvoluted into four peaks like BCN700. As the temperature increases, the percentage of B–N bond decreases. It could be found that BCN-600 has relatively higher B–N, which is electrochemically inactive, leading to relatively poor capacitance performance [10, 36]. For an ideal supercapacitor, it should be able to deliver the same energy under varying operation conditions. Thus, it is necessary to investigate the capacitance retentions at different current load. Figure 5(a) shows the specific capacitances against the discharge current loads for the BCN-700 electrode in comparison with the other three electrodes. For the undoped graphene electrode, the specific capacitance at a discharge current density of 5 A g−1 drops by 43.3% of the capacitance at 0.2 A g−1. However, for the BCN-700, B-graphene, and N-graphene electrodes, the capacitance drops only by about 26.9%, 37.7% and 41.6%, respectively. This comparison result indicates that the doped graphene electrode exhibits an improved rate capability while the dual atoms codoped BCN graphene shows the best one. The excellent rate capability on BCN graphene could be attributed to the improved interfacial contact between electrode and electrolyte granting the effective accessibility for electrolyte ions, and the modified electronic properties of graphene by the B and N codoping. For the real application in supercapacitor devices, the stability of the electrode materials is also very critical. The durability of the BCN graphene electrode was examined by using the continuous CD cycling tests at a current density of 5 A g−1. Figure 5(b) shows the specific capacitance retention of BCN graphene electrode as a function of cycle number. It could be observed that the specific capacitance still remains at 97.5% of its initial capacitance after 2000 cycles, indicating that BCN graphene shows good stability for the supercapacitor application. In summary, we successfully prepared B and N co-doped BCN graphene by a simple thermal annealing approach using a single dopant, melamine diborate, as both B and N sources. The method is simple and safe without involving ammonia gas as the toxic N source. Our physical characterizations demonstrate that the co-doping could significantly increase the doping content of heteroatoms, both B and N atoms, and further enhance the capacitance performance. The as-prepared BCN-700 was subjected to the electrochemical testing to identify its capacitive behaviour as the electrode materials for supercapacitors with comparison to B-graphene, N-graphene and undoped graphene. The electrochemical results indicate that BCN graphene shows the highest specific capacitance, good rate capability and good durability. It is believed that the as-prepared BCN graphene could find other potential applications in the field of lithium ion batteries, fuel cells, electrocatalysis, sensors, and electronic devices etc. Acknowledgments This work was supported by National Natural of Science Foundation of China (Grant No.: 51402100) Marie Curie International Incoming Fellowship Programme of European Commission, Youth 1000 talent Programme of China (Grant No. 531109020032), and Inter-discipline Programe (Grant No. 531107040755). 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