MEMORY MODULE DDR3 SDRam 1Gx16-BGA 3D3D16G16WB2659 DDR3 Synchronous Dynamic Ram 16Gbit DDR3 SDRam organized as 1Gx16 based on 512Mx16 Pin Assignment (Top View) BGA 96 (Pitch : 0.80 mm) Main applications: Embedded Systems Workstations Servers Super Computers Test Systems Features and Benefits - 96 balls JEDEC standard ball-out Combines two 8Gbx8 devices in one package Vdd=VddQ = +1.5V Differential bidirectional data strobe 8n-bit prefetch architecture 8 internal banks per memory Nominal and dynamic on-die termination Programmable CAS latency Posted CAS additive latency Fixed burst lengths of 8 and burst chp (BC) of 4 Selectable BC4 or BL8 on-the-fly Self refresh mode Write leveling Multipurpose register Output driver calibration Clock rate available : 1333 Mbps Commercial, Industrial and Military temperature range. FUNCTIONAL Block Diagram 1 General description CS0#, CKE0, ODT0, ZQ0 2 3D Plus offers a new 16Gbit DDR3 SDRAM cube compatible with the JEDEC standard footprint. This product embeds 2 chips with a capacity of 8Gb (512Mx16) each. They can be addressed with separate CS, CKE, ODT and ZQ. Our products are available at 1333 Mbps in Commercial, Industrial and Military temperature range. CS1#, CKE1, ODT1, ZQ1 DQ0, DQ15 512Mx16 (All other signals are common to the devices) Thanks to the high density patented technology the memories are embedded in a small form factor device without compromising electrical or thermal performance. This device is ideal for high density memory applications that require high speed transfer and compatibility with standard servers and networking equipment. DDR3 Memory Module Preliminary 3D Plus SA reserves the right to cancel product or specifications without notice 3DFP-0659-REV 1 – MARCH 2014 MEMORY MODULE DDR3 SDRam 1Gx16-BGA 3D3D16G16WB2659 DDR3 Synchronous Dynamic Ram 16Gbit DDR3 SDRam organized as 1Gx16 based on 512Mx16 A A1 D E1 b e Parameter Max 4 0.2 15.2 12.2 0.4 0.8 Dimensions (mm) ABSOLUTE MAXIMUM DC RATINGS DC OPERATING CONDITIONS Supply Voltage I/O Supply Voltage Min 3.6 0.17 14.8 11.8 Symbol Min Max Unit VDD VDDQ 1.425 1.425 1.575 1.575 V V Parameter Voltage on any ball relative to VSS Input Leakage Current Vref Supply Leakage Current Storage temperature Symbol Min Max Unit VIN, VOUT Ii IVref TSTG -0.4 -4 -2 -55 +1,875 +4 +2 +150 V µA µA °C Electrical Characteristics Parameter Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability 3D3D16G16WB2659 Operating Current (one bank active) Precharge Power Down Current Room Temp Self Refresh Symbol Value Unit IDD1 160 68 75 mA mA mA IDD2P0 IDD6 X Temperature Range CN = 0°C ~ +70°C IB = -40°C ~ +85°C SB = -40°C ~ +95°C MB = -55°C ~ + 125°C Main Sales Office: 3D PLUS FRANCE 408, rue Hélène Boucher ZI. 78532 BUC Cedex USA 6401 Eldorado Parkway Suite 238 Mckinney, TX 75070 Tel : 33 (0)13 0 83 26 50 Fax : 33 (0)1 39 56 25 89 Web : www.3d-plus.com e-mail : [email protected] Tel : (241) 733-8505 Tel : (241) 733-8506 e-mail : [email protected] DISTRIBUTOR 3D PLUS USA, Inc DDR3 Memory Module Preliminary 3D Plus SA reserves the right to cancel product or specifications without notice 3DFP-0659-REV 1 – MARCH 2014
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