Photomask Japan 2014 Oral Presentations

Photomask Japan 2014
Oral Presentations
(as of April 10)
Date
Session Session
time
No.
10:1011:10
11:1012:10
April
15
12:1012:30
13:4014:40
15:0015:50
15:5016:30
1
2
3
4
5
6
Session Title
Opening Session
Inspection &
Cleaning
NIL
Writing
Technologies
Lithography
Related
Technologies
Program
Presentation Title
No.
Name
Affiliation
Keynote Photomask - The Semiconductor Industry Enabler
Dr. C. S. Yoo
Taiwan Semiconductor
Manufacturing Company, Ltd.
Dr. Natalia Davydova
ASML
Mr. Nacer Zine El
Abidine
STMicroelectronics
Mr. Tao Luo
Maglen Pte Ltd
Dr. davide dattilo
Suss MicroTec
Mr. Yusuke Kawano
Dai Nippon Printing Co., Ltd.,
Dr. Sang Hee Lee
Samsung Electronics
Mr. Hidekazu
Takekoshi
Nuflare Technology,Inc.
Mr. Keisuke Yagawa
Toshiba Corp., (Japan)
1-1
Achievements and Challenges of EUV Mask Imaging
(Invited)
Improved OPC model including an accurate mask model
2-1
for advanced nodes
Multi-column ebeam reticle inspection using permanent
2-2
magnet lens
Efficient ozone, sulfate and ammonium free resist
2-3
stripping process
Development status of sub-10 nm quartz template with
3-1
Side-wall Process
Challenges and Technical Requirements for Multi-Beam
4-1
Mask Writer Development
EBM-9000: EB mask writer for product mask fabrication
4-2
of 16nm half-pitch generation and beyond
High performance mask fabrication process for the next4-3
generation mask production
5-1
CD-improvement is developing and validating the
(Invited) imaging theory
Prof. Masato Shibuya
TOKYO POLYTECHNIC
UNIVERSITY
Osaka prefecture university
graduate school
5-2
Built-in Lens Mask Lithography
Mr. Naoki Ueda
6-1
Prexision display mask writer improvement related to
placement performance and mura
Mr. John-Oscar Larson Micronic Mydata AB
6-2
Demands for Masks in 1.5μm Generation
Mr. Nozomu Izumi
FPD masks
Canon Inc.
Photomask Japan 2014
Oral Presentations
Date
Session Session
time
No.
9:009:30
9:3010:30
8
9
Session Title
Invited session
Metrology
Program
Presentation Title
No.
8-1
Big Glass Panel Discussion
Dr. Paul Ackmann
(Invited)
Novel CD-SEM measurement methodology for complex
9-1
Mr.Hiroshi Fukaya
OPCed patterns
9-2
Production Worthy In-die Mask Registration Metrology
Proximity Corrected Accurate In-Die Registration
Metrology
EUV Mask Process Specifics and Development
10-1
Challenges
Capping layer damage and development of a robust
10-2
capping material for EUV mask
Extreme ultraviolet mask roughness: requirements,
10-3
characterization, and modeling
Etched Multilayer Extreme-Ultra Violet Mask is Better
10-4
than Binary Mask
11-1 Actinic Mask Imaging: Emulating Current and Future
(Invited) Litho Tools with the SHARP EUV Microscope
9-3
10:5012:10
10
EUVL(1)
April
16
13:2014:50
11
Global Foundaries
Advantest Corporation, Japan
Mr. Shunsuke Sato
Toppan Printing Co. Ltd.
Dr. Slawomir Czerkas
KLA Tencor MIE GmbH
Dr. Pavel Nesladek
AMTC Dresden
Mr. IL-YONG JANG
SEMATECH
Dr. patrick naulleau
lawrence berkeley national
laboratory
Prof. Hye-Keun Oh
Hanyang University
Dr. Kenneth A.
Goldberg
SEMATECH
Progress of the AIM EUV: First Light and Beyond
Mr. Anthony Garetto
Carl Zeiss SMS
11-3
Learning from native defects on EUV mask blanks
Dr. Emily Gallagher
IBM Microelectronics
EUVL(2)
12-1
12-2
12
Affiliation
11-2
11-4
15:1016:50
Name
EUVL(3)
Development of Micro Coherent EUV Scatterometry
Dr. Tetsuo Harada
Microscope for Phase Defect Observation
Towards reduced impact of EUV mask defectivity on
Mr. Rik Jonckheere
wafer
EUV Patterned mask inspection performance of an
advanced Projection Electron Microscope (PEM) system Mr. Ryoichi Hirano
for hp 16 nm and beyond
University of Hyogo
IMEC
EUVL Infrastructure Development
Center, Inc.
12-3
Screening EUV mask absorbers for defect repair
Mr. Takeshi Isogawa
Toppan Photomasks Inc.
12-4
Defect analysis on Actinic Blank Inspection tool
Mr. Tomohiro Suzuki
Lasertec Corporation
12-5
Performance in practical use of actinic EUVL mask
blank inspection
Dr. Takeshi Yamane
EIDEC

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