eGaN® FET TECHNOLOGY
TECHNOLOGY BRIEF: TB001
Enhancement-Mode Gallium Nitride
Power Transistor Technology
EFFICIENT POWER CONVERSION
The End of the Road for Silicon…
Disruptive solutions offer a path to new levels
of end product differentiation. Gallium nitride
power transistors will get you there.
Here are the advantages of GaN FETs vs.
Silicon MOSFETs in your power design:
• Easy to use
• Cost effective
40 V MOSFET
200 V GaN Transistor
200 V MOSFET
10
6.5
Q G (nC)
• Enables new capabilities
40 V GaN Transistor
100
xR
3.2
Imp
xR
L
rov ower
ed FOM
Per
for
ma
1
• Reliable
edu
edu
ctio
n
ctio
n
nce
0.1
1
10
RDS(on)(m )
100
1000
GaN Enables New Capabilities
GaN is Easy To Use
• Higher Switching Frequency – lower switching losses and
lower drive power
• Works like an N-Channel MOSFET only MUCH faster
• Higher Efficiency – lower conduction and switching losses,
zero reverse recovery losses
• Comprehensive Design Support – industry studies, technical
articles, device models , application notes, white papers, demo
boards
• Smaller Footprint – Higher power density
GaN is Cost Effective
GaN is Reliable
• GaN on Silicon – inexpensive substrate
• Proven Technology
• Built on Existing CMOS Fab Process – reduced number of
process steps
• Secure Supply Chain
• Lowers System Cost – allows smaller and fewer passive
components
• GaN is Inherently Radiation Hardened
EPC – THE LEADER IN eGaN® FETS | WWW.EPC-CO.COM | COPYRIGHT 2014 |
| PAGE 1
TECHNOLOGY BRIEF: TB001
eGaN® FET TECHNOLOGY
Enhancement-Mode Gallium Nitride Transistors (eGan® FETs)
9 MM
10 MM
11 MM
12 MM
13 MM
14 MM
Field Plate
A GaN transistor is a wide bandgap device with superior
conductivity compared to traditional silicon transistors
resulting in smaller devices and lower capacitance for the
same RDS(on). AlGaN
Protection Dielectric
S
Enhancement-mode (normally-off ) operation allows power
designers to take advantage of the performance benefits of
gallium nitride in a switching application.
G
D
GaN
Two Dimensional
Electron Gas (2DEG)
Aluminum Nitride
Isolation Layer
Si
Capacitance and inductance impede switching speed.
eGaN FETs’ small size and lateral structure give ultra low
capacitance while the Land Grid Array (LGA) package gives
low inductance enabling unprecedented switching performance in terms of speed, voltage overshoot and ringing. Zero QRR also reduces losses at high frequency
eGaN FET’s switching performance enables higher power density, higher frequency, higher switching precision, higher bus voltage, and less voltage overhead.
The technology can be scaled over many power and voltage levels.
~3V overshoot @ 15 A
12
VIN =28 V
Gate to Source Voltage (V)
10
IOUT =15 A
~1.1ns Rise Time at 28 V
8
MOSFET
6
eGaN FET
4
2
0
5 V/ div
0
10
20
30
40
20 ns/ div
50
Total Gate Charge (nC)
EPC – THE LEADER IN eGaN® FETS | WWW.EPC-CO.COM | COPYRIGHT 2014 |
| PAGE 2
TECHNOLOGY BRIEF: TB001
eGaN® FET TECHNOLOGY
Applications
• Wireless Power – 6.78 MHz is perfect for eGaN FETs
• RF Amplifier – lower cost below 2 GHz
• Envelope Tracking – Double the efficiency of your RF power amplifier
• Motor Drive – higher frequency reduces motor size
• LiDAR – Short pulse width at high current = high resolution imaging
• Medical – enhanced image resolution at lower cost
• Class D Audio – smaller with better sound quality
• Analog Switching – higher power and higher frequency at higher voltages
• Isolated DC-DC Converter – higher power density
• LED Lighting – higher power density and better control
• POL Converter – higher efficiency with better transient response
Design Support Available @ www.epc-co.com
Application Demonstration Boards
LIBRARY
Desi eGaN
gn S
upp
®
Development Boards
MARKETS
or t
applications
POWER
CONVE
RSION
PUBLI
CATION
S
DEVICE MODELS
VIDEO
LIBRARY
assembly
resources
eGaN
eGaN FET Assembling
Technology Characteristics eGaN FETs
Application
Notes
WHITE
PAPERS
Volume 1
Volume 2
Volume 3
eGaN
eGaN
Lead Free/
Devices
Reliability
RoHS
in Circuits
Volume 4
Volume 5
Volume 6
Reliability
UNIVERSITY RESEARCH
Encyclopedia of Frequently Asked Questions
Technical Archive
Conference Presentations
Application Videos
EPC – THE LEADER IN eGaN® FETS | WWW.EPC-CO.COM | COPYRIGHT 2014 |
| PAGE 3
TECHNOLOGY BRIEF: TB001
eGaN® FET TECHNOLOGY
eGaN FET Selector Guide
Part Number
Configuration
VDS
EPC2100
Dual
Asymmetrical
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Asymmetrical
Dual
Single
Single
Single
Single
Dual
Asymmetrical
Dual
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
30
EPC2023
EPC2024
EPC2015
EPC2014C
EPC8004
EPC8007
EPC8008
EPC2020
EPC2101
EPC2102
EPC8009
EPC8005
EPC8002
EPC2021
EPC2105
EPC2103
EPC2022
EPC2001C
EPC2016C
EPC2007C
EPC8010
EPC8003
EPC2018
EPC2010C
EPC2019
EPC2012C
EPC2025
EPC2027
30
40
40
40
40
40
40
60
60
60
65
65
65
80
80
80
100
100
100
100
100
100
150
200
200
200
300
450
Max RDS(ON)
(mΩ)
@5VGS
QG typ
(nC)
QGS typ
(nC)
QGD max
(nC)
QOSS typ
(nC)
8
2
1.3
1.5
4
16
110
160
325
2.0
11.5
2.7
4.4
130
275
530
2.5
14.5
3.5
5.5
3.2
7
16
30
160
300
25
25
50
100
150
400
3.5
15
20
19
10.50
2.00
0.37
0.302
0.177
16
2.7
12
6.8
0.37
0.218
0.141
15
2.5
10
6.5
13
7.50
3.40
1.60
0.360
0.315
5.00
3.70
1.80
1.00
1.90
1.70
1.4
4.6
5.80
6.40
3.00
0.70
0.12
0.097
0.067
5.00
1
3.7
2.3
0.12
0.077
0.059
3.80
1
3.2
2
3.70
2.40
1.10
0.60
0.130
0.110
1.30
1.30
0.60
0.30
0.61
0.60
0.57
2.6
1.90
2.00
2.20
0.30
0.047
0.025
0.012
2.00
0.50
2.5
1.4
0.055
0.018
0.009
2.10
0.50
2
1.3
2.00
1.20
0.55
0.30
0.060
0.034
2.60
0.70
0.35
0.20
0.30
0.25
5.5
28
28
32
18.50
4.00
0.63
0.406
0.211
42
9
45
23/31
0.94
0.414
0.244
56
11
55
29/39
62
31.00
16.00
8.30
2.200
1.100
40.00
40.00
18.00
10.00
20.00
19.00
QRR (nC)
ID (A)
Pulsed
0
9.5
38
60
60
33
10
2.7
2.7
2.7
60
9.5
38
23
2.7
2.7
2*
60
9.5
38
23
60
36
18
6
2.7
2.7
12
22
8.5
5
4
4
100
400
590
550
150
60
7.5
6
2.9
470
80
350
215
7.5
3.8
2
420
75
320
195
360
150
75
40
7.5
5
60
90
42
22
20
12
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
LGA
Package
(mm)
6.1 x 2.3
6.1 x 2.3
6.1 x 2.3
4.1 x 1.6
1.7 x 1.1
2.1 x 0.85
2.1 x 0.85
2.1 x 0.85
6.1 x 2.3
6.1 x 2.3
6.1 x 2.3
2.1 x 0.85
2.1 x 0.85
2.1 x 0.85
6.1 x 2.3
6.1 x 2.3
6.1 x 2.3
6.1 x 2.3
4.1 x 1.6
2.1 x 1.6
1.7 x 1.1
2.1 x 0.85
2.1 x 0.85
3.6 x 1.6
3.6 x 1.6
2.7 x 0.95
1.7 x 0.9
1.95 x 1.95
1.95 x 1.95
Demonstration Boards for eGaN FETs Available:
Part Number
Description
Featured Product
EPC9101
EPC9102
EPC9105
EPC9106
EPC9107
EPC9111/12
EPC9118
EPC9013
EPC90xx
1MHz Buck Converter: 19 V to 1.2 V, 18 A
1/8th Brick Converter: 48 V to 12 V, 17 A
1.2 MHz Intermediate Bus Converter: 48 V to 12 V, 30 A
250 W / 4 Ohm Class D Audio Amplifer
Buck Converter: 28 V to 3.3 V, 15 A
A4WP compliant, ZVS Class-D Wireless Power System
48 V to 5 V 400 kHz Buck Converter
Multiple Half Bridges in Parallel (35 A)
Half Bridge Plus Driver
EPC2015/EPC2014
EPC2001
EPC2001/EPC2015
EPC2016
EPC2015
EPC2014/EPC2007
EPC2001/EPC2021
EPC2001
Available for most part numbers
Schematics, bill of materials, and gerber files for all demo boards are available at epc-co.com
* Preliminary information - subject to change without notification.
For More Information
Please contact [email protected]
or your local sales representative
Visit our website: epc-co.com
EFFICIENT POWER CONVERSION
Sign-up to receive EPC updates at
bit.ly/EPCupdates or text “EPC” to 22828
EPC – THE LEADER IN eGaN® FETS | WWW.EPC-CO.COM | COPYRIGHT 2014 |
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
| PAGE 4

GaN: Raising the Bar for Power Conversion Performance

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