GaN: Raising the Bar for Power Conversion Performance

The eGaN® FET
Journey Continues
GaN: Raising the Bar for Power
Conversion Performance
David Reusch and Johan Strydom
Efficient Power Conversion Corporation
www.epc-co.com
EPC - The Leader in eGaN® FETs
1
Agenda
• Why GaN?
• What have we learned?
• Higher current applications
• Higher frequency applications
• Summary
EPC - The Leader in eGaN® FETs
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2
Why Gallium Nitride?
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3
Ideal Hard Switching
tVR ∝ QGD tCF ∝ QGS2
VIN
VDS
IDS
IOFF
VGS
VPL
VTH
𝐏𝐏𝐭𝐭 𝐕𝐕𝐕𝐕
𝐕𝐕𝐈𝐈𝐈𝐈 ∗ 𝐈𝐈𝐎𝐎𝐎𝐎𝐎𝐎 ∗ 𝐐𝐐𝐆𝐆𝐆𝐆
≈
𝟐𝟐 ∗ 𝐈𝐈𝐆𝐆
EPC - The Leader in eGaN® FETs
t
𝐏𝐏𝐭𝐭 𝐂𝐂𝐂𝐂
𝐕𝐕𝐈𝐈𝐈𝐈 ∗ 𝐈𝐈𝐎𝐎𝐎𝐎𝐎𝐎 ∗ 𝐐𝐐𝐆𝐆𝐆𝐆𝐆𝐆
≈
𝟐𝟐 ∗ 𝐈𝐈𝐆𝐆
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44
100 V Device Comparison
FOM = (QGD+QGS2)·RDSON (pC·Ω)
90
80
70
100 V MOSFETs
100 V
eGaN FET
60
50
QGS2
QGS2
QGS2
QGD
QGD
QGD
QGS2
40
30
20
QGS2
10
QGD
QGD
0
EPC 2001
FDMC86160
SiR870ADP BSZ150N10LS3 G AON7290
VDS=0.5*VDS, IDS= 10 A
EPC - The Leader in eGaN® FETs
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5
eGaN FET vs MOSFET
100
40 V
eGaN FET
Efficiency (%)
95
90
100 V eGaN FET
85
80
40 V Si
MOSFET
75
70
65
Buck Converter
500 kHz
1 MHz
60
55
80 V Si MOSFET
80 V Si MOSFET
50
10
15
20
25
30
35
40
45
50
55
60
65
Input Voltage (V)
Measured Efficiency VOUT=1.2 V IOUT=10 A
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66
Package Impact on Efficiency
Drain
Gate
Source
SO-8
LFPAK
Device Loss Breakdown
Power Loss (W)
VIN =12V
VOUT =1.2V
IOUT =20A
fsw =1MHz
Die
2
1.5
82%
73%
1
47%
0.5
18%
27%
53%
18%
82%
SO-8
LFPAK
DirectFET
LGA
85
80
75
70
65
0.5
0
SO-8
LFPAK
EPC - The Leader in eGaN® FETs
DirectFET
LGA
eGaN
FET
LGA
90
Efficiency (%)
Package
2.5
DirectFET
1
1.5
2
2.5
3
Switching Frequency (MHz)
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3.5
7
Layout Impact on Efficiency
Measured Efficiency
91
Efficiency (%)
90
89
88
87
86
85
40 V eGaN FET
40 V MOSFET
84
LLoop≈
0.4nH
LLoop≈
1.0nH
LLoop≈
1.7nH
LLoop≈
2.2nH
83
2
4
6
8
10 12 14 16 18 20 22 24
Output Current (A)
EPC Optimal Layout
Ref: D. Reusch, J. Strydom,
“Understanding the Effect of PCB Layout
on Circuit Performance in a High
Frequency Gallium Nitride Based Point of
Load Converter,” APEC 2013
VIN=12 V, VOUT=1.2 V, fsw=1 MHz, L=300 nH
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8
Lower Voltage Comparison
91
90
Efficiency (%)
89
88
87
86
85
40 V Discrete eGaN FET
40 V Discrete MOSFET
25 V Discrete MOSFET
30 V Module MOSFET
84
83
82
81
80
2
4
6
8
10
12
14
16
18
20
22
Output Current (A)
VIN=12 V VOUT=1.2 V fsw=1 MHz L=300 nH
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9
Switching Comparison
30 V Si MOSFET Module
40 V Si MOSFET
40 V
eGaN FET
Switch Node Voltage
20 ns/ div
3 V/Div
VIN=12 V VOUT=1.2 V IOUT=20 A fsw=1 MHz L=300 nH
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10
Extended Operating Range
VIN=12-28 V VOUT=3.3 V
IOUT=15 A fsw=1 MHz
2 x EPC2015
~3V overshoot @ 15 AOUT
~1.1ns rise time @ 15 A
EPC9107
Switching Node
Voltage
VIN=28 V IOUT=15 A
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VIN=28 V
5 V/ div
20 ns/ div
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11
Parallel Power Devices
?
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12
Higher Output Current
T1
T3
SR1
SR3
SR2
SR4
SR4
T4
T2
SR4
SR1
Switch Node Voltage
10 V/ div
5 ns/ div
VIN=48 V VOUT=12 V IOUT=30 A fsw=300 kHz L=3.3 µH GaN FET T/SR: 100 V EPC2001
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13
Paralleling eGaN FETs
T1
T3
SR1
SR3
SR2
SR4
T2
T4
VIN=48 V VOUT=12 V IOUT=30 A fsw=300 kHz L=3.3 µH Fan Speed=200 LFM
GaN FET T/SR: 100 V EPC2001
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14
Parallel eGaN FET Swithcing
1x eGaN FET
2x eGaN FET
4x eGaN FET
Switch Node Voltage
10 V/ div
5 ns/ div
VIN=48 V VOUT=12 V IOUT=30 A/ number of devices fsw=300 kHz GaN FET T/SR: 100 V EPC2001
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15
High Current Applications
98
300 kHz eGaN FET Buck IBC
14 W
Efficiency (%)
97
96
150 kHz Si
Isolated IBC
95
245 kHz Si
Isolated IBC
94
93
92
2
6
10
14
18
22
26
30
34
38
42
Output Current (A)
VIN=48 V VOUT=12 V Fully Regulated IBC
EPC - The Leader in eGaN® FETs
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16
Pushing to Higher Frequency
EPC8004
eGaN FET
Gen 3 FOM
EPC2014
EPC - The Leader in eGaN® FETs
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17
Ultra High Frequency
Buck Converter
VIN=42 V VOUT=20 V fsw=10 MHz eGaN FET T/SR: EPC8005
See High Frequency Talk Today in Session T30!
EPC - The Leader in eGaN® FETs
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18
GaN in the Future
Mass Production
40 V - 200 V
~500 MHz
Ultra High Frequency Family
1 - 3 GHz
Launched Sept 2013
Higher Current
45 A
Higher Voltage
600 V
More functions on a chip
Monolithic half bridge
Driver on power chip
Next Generation Devices
2 x FOM Improvement
EPC - The Leader in eGaN® FETs
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19
Summary
eGaN FETs continue to raise the bar for
power conversion performance
• Better FOM’s
• Better Packaging
• Improved PCB Layout Techniques
• Better In-Circuit Performance
• Good Parallel Performance
• Higher Frequency Devices
Thank You For Your Time ! Questions?
EPC - The Leader in eGaN® FETs
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20
The end of the road
for silicon…..
is the beginning of
the eGaN FET
journey!
EPC - The Leader in eGaN® FETs
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21
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