The eGaN® FET Journey Continues Giving New Life to Moore’s Law Efficient Power Conversion Corporation EPC - The Leader in GaN | August, 2014 | www.epc-co.com 1 Agenda • Moore’s Law is Alive and Well for GaN FETs – RDS(on) Improvements – Figure of Merit Improvements • Where is GaN Going? – DC-DC Converters – Wireless Power – Envelope Tracking • A Look Into the Future • Summary EPC - The Leader in GaN | August, 2014 | www.epc-co.com 2 On-Resistance Comparison 6 Generation 2 2011 RDS(on) (mΩ) 5 4 2.3x 3 2 Generation 4 2014 2.6x 1 0 0 20 40 60 80 100 120 Drain-to-Source Voltage (V) VGS=5 V EPC - The Leader in GaN | August, 2014 | www.epc-co.com 3 Hard Switching FOM FOMHS=(QGD+QGS2)·RDS(on) (pC·Ω) 50 45 40 1.4x 35 Generation 2 2011 30 25 20 15 2.4x 10 2.4x 5 Generation 4 2014 0 0 50 100 150 200 250 Drain-to-Source Voltage (V) VDS=0.5·VDSS, IDS=20 A EPC - The Leader in GaN | August, 2014 | www.epc-co.com 4 Hard Switching FOM 250 FOMHS=(QGD+QGS2)·RDS(on) (pC·Ω) EPC Gen 4 EPC Gen 2 Vendor A 200 Vendor B Vendor C Vendor D Vendor E 150 100 5x 50 8x 4.8x 0 0 50 100 150 200 250 Drain-to-Source Voltage (V) VDS=0.5·VDSS, IDS=20 A EPC - The Leader in GaN | August, 2014 | www.epc-co.com 5 Soft Switching FOM FOMSS=(QG+QOSS)·RDS(on) (pC·Ω) 900 800 1.3x 700 Generation 2 2011 600 500 400 300 1.3x Generation 4 2014 200 1.5x 100 0 0 50 100 150 200 250 Drain-to-Source Voltage (V) VDS=0.5·VDSS EPC - The Leader in GaN | August, 2014 | www.epc-co.com 6 Soft Switching FOM FOMSS=(QG+QOSS)·RDS(on) (pC·Ω) 2500 EPC Gen 4 EPC Gen 2 2000 Vendor A Vendor B 1500 3.2x 1000 500 2.4x 2.5x 0 0 50 100 150 200 250 Drain-to-Source Voltage (V) VDS=0.5·VDSS EPC - The Leader in GaN | August, 2014 | www.epc-co.com 7 Die Layout EPC - The Leader in GaN | August, 2014 | www.epc-co.com 8 EPC - The Leader in GaN | August, 2014 | www.epc-co.com 9 Hard Switching Buck Converter EPC - The Leader in GaN | August, 2014 | www.epc-co.com 10 Low Voltage Buck Converter 94 eGaN FET Generation 4 Efficiency (%) 93 92 91 eGaN FET Generation 2 90 89 88 30 V MOSFET Module 87 fsw=0.5 MHz fsw=1 MHz 86 2 6 10 14 18 22 26 30 34 38 42 46 50 Output Current (A) VIN=12 V VOUT=1.2 V EPC - The Leader in GaN | August, 2014 | www.epc-co.com 11 Hard Switching Buck Converter EPC - The Leader in GaN | August, 2014 | 12 www.epc-co.com 12 Efficiency (%) Higher Voltage Performance 98.5 98 97.5 97 96.5 96 95.5 95 94.5 94 93.5 93 92.5 92 eGaN FET Generation 2 eGaN FET Generation 4 80 V MOSFET fsw=300 kHz fsw=500 kHz 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 Output Current (A) VIN=48 V VOUT=12 V EPC - The Leader in GaN | August, 2014 | 13 www.epc-co.com 13 Envelope Tracking Battery or DC/DC Converter RFIC W/O ET With ET PA HF ET DC/DC Converter ET Signal PA RFIC Reference: Nujira.com website EPC - The Leader in GaN | August, 2014 | www.epc-co.com 14 Very High Frequency eGaN FETs EPC8004 eGaN FET Gen 3 FOM EPC2014 eGaN FET EPC - The Leader in GaN | August, 2014 | www.epc-co.com 15 Efficiency Results 42 VIN to 20 VOUT, 10 MHz 95% 6 93% 91% 5 Efficiency 87% 4 85% 83% 3 81% 79% 2 77% 75% Power Loss (W) 89% 1 73% EPC8005 71% 0 0 10 20 30 40 Output power (W) EPC - The Leader in GaN | August, 2014 | www.epc-co.com 16 Switching Waveforms 10 MHz switching, no load, large dead-time 10V/div, 100mA/div, 10ns/div Expected commutation based on eGaN FET COSS Switch-node voltage Bootstrap QRR EPC - The Leader in GaN | August, 2014 | Actual commutation based on total COSS – including IC capacitance www.epc-co.com 17 42 VIN to 20 VOUT, 10 MHz 95% 93% 91% 89% 87% 85% 83% 81% 79% 77% 75% 73% 71% 6 With improved driver 5 4 3 With improved driver 2 Power Loss (W) Efficiency Improving HF Performance 1 EPC8005 0 10 20 30 0 40 Output power (W) EPC - The Leader in GaN | August, 2014 | www.epc-co.com 18 Wireless Power The global wireless charging market is estimated to grow to $10B by 2018, a CAGR of 42.6%. EPC - The Leader in GaN | August, 2014 | www.epc-co.com 19 Wireless Power Setup eGaN FETs RF connection Device Coil 25mm Coil Feedback Source Board EPC - The Leader in GaN | August, 2014 | Source Coil Device Board 50mm RF connection www.epc-co.com 20 Class-E Power Amplifier VDD Le Cs LRFck + Q1 EPC2012 Source Coil Connection Csh Zload V/I Le = 500 nH 3.56 x VDD Csh = 100 pF Underneath Coil VDS ID 50% EPC - The Leader in GaN | August, 2014 | LM5113 Gate Driver LRFchck = 150 µH time www.epc-co.com 21 ZVS Class-D Power Amplifier LM5113 Gate Drive EPC8009 x2 Source Coil Connection V/I VDD VDS ILZVS ID Dead-time LZVS = 500 nH Preset CZVS = 1 µF time EPC - The Leader in GaN | August, 2014 | www.epc-co.com 22 Performance Comparison Vout = 15 V 25 η ZVS-CD 80 η CE-2012 75 Pout 20 70 15 65 10 60 55 Output Power [W] Efficiency [%] 85 5 Category 3 Power zone 50 45 0 0 20 40 EPC - The Leader in GaN | August, 2014 | 60 80 100 120 140 DC Load Resistance [Ω] 160 180 200 www.epc-co.com 23 Other Key Applications • • • • • • • LiDAR High Resolution MRI Imaging Network and Server Power Supplies AC Adapters Class-D Audio Energy Efficient Lighting Robotics EPC - The Leader in GaN | August, 2014 | www.epc-co.com 24 Moore’s Law Revival Gen 2 2010-2013 40 V - 200 V ~500 MHz Generation 3 Higher Frequency 1 -3 GHz Launched September 2013 Generation 4 2 X Performance Improvement June 2014 Integrated Circuits Summer 2014 High Voltage September 2014 Generation 5 2 x Performance Improvement December 2014 EPC - The Leader in GaN | August, 2014 | www.epc-co.com 25 Summary • eGaN FETs continue to improve rapidly – even faster than Moore’s Law! • Hard-switched POLs using forth-generation eGaN FETs realize double the benefit in efficiency when compared with second-generation eGaN FETs. • eGaN FETs are enabling efficient RF envelope tracking for 4G-LTE base stations. • New topologies that apply eGaN FETs in loosely coupled wireless power are the most efficient and stable. • GaN is always better than silicon! EPC - The Leader in GaN | August, 2014 | www.epc-co.com 26
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