Kick-off Symposium TUM-IAS / IBM Fellowship Programs February 4, 2015 | 15:00 | TUM-IAS | Lichtenbergstr. 2 a, Garching 15:00 - 15:15 Gerhard Abstreiter, TUM-IAS, and Martin Mähler, IBM Deutschland Welcome remarks and Fellowship nominations 15:15 - 16:15 Heike Riel, IBM Research – Zurich, and TUM-IAS Rudolf Diesel Industry Fellow “III-V Nanowires – from materials to nanoscale devices” 16:15 - 16:30 Julian Treu, TUM “Growth of high-uniformity surface passivated InGaAs-based nanowires on Si” 16:30 - 16:45 Bernhard Loitsch, IBM and TUM “Advanced optical properties of GaAs nanowires” 16:45 - 17:00 Stefanie Morkötter, TUM “Transport in delta-doped GaAs-AlGaAs core-shell nanowire transistors“ 17:00 - 17:15 Nadine Erhard, TUM “Ultrafast optoelectronics in nanowire heterostructures” Reception Co-organizers: Alexander Holleitner, Gregor Koblmüller, Walter Schottky Institut, TUM Technische Universität München · Institute for Advanced Study Lichtenbergstraße 2 a · 85748 Garching · Tel +49.89.289.10550 · [email protected] · www.tum-ias.de
© Copyright 2024 ExpyDoc