MOSFET 30A 450~500V

MOSFET 30A 450~
450~500V
PD4M441H/440H
PD4M441H
P2H4M441H
PD4M440H
P2H4M440H
P2H4M441H/440H
108.0
108.0
質量 Approximate Weight :220g
質量 Approximate Weight :220g
■最大定格 Maximum Ratings
項
目
Rating
ドレイン・ソース間電圧
VDSS
Drain-Source Voltage
ゲート・ソース間電圧
Gate-Source Voltage
ドレイン電流(連続)
Duty=50%
Continuous Drain Current
D.C.
パルスドレイン電流
Pulsed Drain Current
全損失
Total Power Dissipation
動作接合温度範囲
Operating Junction Temperature Range
保存温度範囲
Storage Temperature Range
絶縁耐圧
RMS Isolation Voltage
締付トルク
1
Mounting Torque
記 号
Symbol
単位
耐 圧・クラス Grade
PD4M441H/P2H4M441H PD4M440H/P2H4M440H Unit
450
500
V
VGS=0V
VGSS
±20
V
ID
30(Tc=25℃)
21(Tc=25℃)
A
IDM
60(Tc=25℃)
A
PD
230(Tc=25℃)
W
Tjw
−40∼+150℃
℃
Tstg
−40∼+125℃
℃
Viso
Ftor
2000
端子 - ベース間,AC1 分間 Terminals to Base, AC 1 min .
3.0(本体取付 Module Base to Heat sink)
2.0(ネジ端子部 Bus bar to Main Terminals)
V
N・m
■電気的特性 Electrical Characteristics(@TC=25℃ unless otherwise noted)
項 目
Characteristic
ドレイン遮断電流
Zero Gate Voltage Drain Current
ゲート・ソース間しきい値電圧
Gate-Source Threshold Voltage
ゲート・ソース間漏れ電流
Gate-Source Leakage Current
ドレイン・ソース間オン抵抗(MOSFET部)
Static Drain-Source On-Resistance
ドレイン・ソース間オン電圧
Drain-Source On-Voltage
順伝達コンダクタンス
Forward Transconductance
入力容量
Input Capacitance
出力容量
Output Capacitance
帰還容量
Reverse Transfer Capacitance
ターン・オン遅延時間
Turn-On Delay Time
上昇時間
Rise Time
ターン・オン遅延時間
Turn-Off Delay Time
下降時間
Fall Time
記号
Symbol
条 件
Condition
特性値(最大)
Maximum Value
最小
標準
最大
Min.
Typ.
Max.
単位
Unit
VDS=VDSS, VGS=0V
─
─
1
Tj=125℃, VDS=VDSS, VGS=0V
─
─
4
VDS=VGS, ID=1mA
2
3.2
4
V
VGS=±20V, VDS=0V
─
─
1
μA
rDS
(on)
VGS=10V, ID=15A
─
190
210
mΩ
VDS
(on)
VGS=10V, ID=15A
─
3.3
3.5
V
gfg
VDS=15V, ID=15A
─
27
─
S
─
5.2
─
nF
─
1.1
─
nF
Crss
─
0.18
─
nF
t(on)
d
─
100
─
ns
─
60
─
ns
─
180
─
ns
─
50
─
ns
IDSS
VGS(th)
IGSS
Ciss
Coss
tr
t(off)
d
VGS=0V
VDS=25V
f=1MHz
VDD=1/2VDSS
ID=15A
VGS=−5V, +10V
RG=7Ω
tf
mA
■内部ダイオード定格・特性 Source-Drain Diode Ratings and Characteristics(@TC=25℃ unless otherwise noted)
項 目
Characteristic
ソース電流(連続)
Continuous Source Current
パルスソース電流
Pulsed Source Current
ダイオード順電圧
Diode Forward Voltage
逆回復時間
Reverse Recovery Time
逆回復電荷
Reverse Recovery Charge
記号
Symbol
IS
条 件
Condition
D. C.
ISM
VSD
trr
Qr
IS=30A
IS=30A
−diS/dt=100A/μs
特性値(最大)
Maximum Value
最小
標準
最大
Min.
Typ.
Max.
単位
Unit
─
─
21
A
─
─
60
A
─
─
1.8
V
─
100
─
ns
─
0.15
─
μC
■熱抵抗特性 Thermal Characteristics
項 目
Characteristic
記号
Symbol
熱抵抗(接合部−ケース間)
Thermal Resistance, Junction to Case
Rth
(j-c)
接触熱抵抗(ケース−冷却フィン間)
Thermal Resistance, Case to Heatsink
Rth
(c-f)
条 件
Condition
特性値(最大)
Maximum Value
最小
標準
最大
Min.
Typ.
Max.
MOSFET
─
─
0.56
Diode
─
─
2.0
サーマルコンパウンド塗布
Mounting surface flat, smooth, and greased
─
─
0.1
─ 308 ─
単位
Unit
℃/W
M
O
S
F
E
T
モ
ジ
ュ
ー
ル
■定格・特性曲線
6V
30
20
VGS=5V
10
4V
2
4
6
8
10
DRAIN TO SOURCE VOLTAGE VDS (V)
VGS=0V f=1kHz
8
Ciss
6
4
Coss
Crss
1
2
5
10
20
50
DRAIN TO SOURCE VOLTAGE VDS (V)
RG=7Ω VDD=250V TC=25℃ 80μs Pulse Test
td(on)
100
tr
50
tf
10
1
2
5
10
20
DRAIN CURRENT ID (A)
50
Fig. 10 Maximum Safe Operating Area
TC=25℃ Tj=150℃MAX Single Pulse
Operation in this area
100 is limited by RDS (on)
8
4
20
100μs
0
40
80
120
160
200
TOTAL GATE CHRAGE Qg (nC)
40
30
Tj=125℃
Tj=25℃
20
0
0
0.4
0.8
1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
Fig. 11-1
Normalized Transient Thermal
impedance(MOSFET)
10ms
0.5
0.2
240
1
0.5
toff
DC
1
2
ton
0.2
0.05
250μs Pulse Test
Fig. 11-2
Normalized Transient Thermal
impedance(DIODE)
1
ID=15A VDD=250V TC=25℃ 80μs Pulse Test
5
−441H −440H
5
10 20
50 100 200 500 1000
DRAIN TO SOURCE VOLTAGE VDS (V)
─ 309 ─
2
5
10
20
50
100
SERIES GATE IMPEDANCE RG (Ω
)
200
IS=30A IS=15A Tj=150℃
500
200
trr
100
50
IR
20
10
5
1.6
0
100
200
300
400
-dis/dt (A/μs)
500
600
2
10 0
5
2
10 -1
Per Unit Base
Rth(j-c)=0.56℃/W
1 Shot Pulse
5
2
10 -2 -5
10
10 -4
1ms
2
160
Fig. 9 Typical Reverse Recovery Characteristics
10
5
0
40
80
120
JUNCTION TEMPERATURE Tj ( ℃)
0.1
NORMALIZED TRANSIENT
THERMAL IMPEDANCE
[rth(j-c) / Rth(j-c)]
DRAIN CURRENT ID (A)
10μs
0
-40
2
200
50
10A
ID=20A
10
20
15A
4
VDD=100V
250V
400V
60
SOURCE CURRENT IS (A)
td(off)
8
Fig. 6 Typical Switching Time
Fig. 6 Vs. Series Gate impedance
50
200
ID=30A
12
16
Fig. 8 Typical Source-Drain Diode Forward
Fig. 8 Characteristics
500
SWITCHING TIME t (ns)
4
8
12
GATE TO SOURCE VOLTAGE VGS (V)
12
0
100
Fig. 7 Typical Switching Time
Fig. 7 Vs. Drain Current
1000
0
16
GATE TO SOURCE VOLTAGE VGS (V)
CAPACITANCE C (nF)
10
0
10A
2
Fig. 5 Typical Gate Charge
Fig. 5 Vs. Gate-Source Voltage
12
2
15A
0
12
Fig. 4 Typical Capacitance
Fig. 4 Vs. Drain-Source Voltage
4
VGS=10V 250μs Pulse Test
16
SWITCHING TIME t (μs)
0
ID=30A
6
NORMALIZED TRANSIENT
THERMAL IMPEDANCE
[rth(j-c) / Rth(j-c)]
0
TC=25℃ 250μs Pulse Test
8
DRAIN TO SOURCE ON VOLTAGE VDS (on)(V)
10V
40
Fig. 3 Typical Drain-Source On Voltage
Fig. 3 Vs. Junction Temperature
DRAIN TO SOURCE ON VOLTAGE VDS (on)(V)
TC=25℃ 250μs Pulse Test
50
DRAIN CURRENT ID (A)
Fig. 2 Typical Drain-Source On-Voltage
Fig. 2 Vs. Gate-Source Voltage
REVERSE RECOVERY TIME trr (ns)
REVERSE CURRENT IR (A)
Fig. 1 Typical Output Characteristics
10 -3
10 -2
10 -1
PULSE DURATION t (s)
10 0
10 1
2
10 0
5
2
10 -1
Per Unit Base
Rth(j-c)=2.0℃/W
1 Shot Pulse
5
2
10 -2 -5
10
10 -4
10 -3
10 -2
10 -1
PULSE DURATION t (s)
10 0
10 1