˯໗እᅈ˟ửܱྵẴỦ ૼ૰ἣὁὊҞ˳ݰἩἿἊỹἁἚ ίᵦᵐᵐᵌᵖ῍ᵦᵐᵕᵌᵐὸ ᵩᶃᶗᴾᵵᶍᶐᶂᶑ Large-scale SiC Wafer, SiC Switching Device, HT Packaging ಒ ᙲ ᭗ԼឋᵔḜᵱᶇᵡኽᧈể᭗ᡮɟᝦỸỹἡьẆ᭗ԼឋỺἦᧈửܱྵ ẴỦểểờỆẆወӳᚸ̖ἩἻἕἚἧỻὊἲửನሰẲềࣱ̮᫂ỉỸỹἡെ ᨞ỂỉʖยửӧᏡểẲẺẇộẺẆૼᙹನᡯἙἢỶἋႆể٭੭֥ܱᚰ ỆợụᵱᶇᵡἙἢỶἋỉἯἘὅἉἵἽửܱᚰẲẺẇܱᘺؕႴ২ᘐỂỊẆ᎑ ༏ᢿԼửဇẟẺ᭗ภܱᘺ২ᘐỉӧᏡࣱửܱᚰẲẺẇ ᭗ԼឋὉٻӝࢲỸỹἡᙌᡯ২ᘐ ᭗᎑ןἋỶἕἓὅἂἙἢỶἋᙌᡯ২ᘐ Ṽ ᭗᎑ן᪸؏ỉૼᙹನᡯἙἢỶἋửܱᚰ Ṽ ᭗ԼឋᵔḜỸỹἡỉ˯ἅἋἚ҄ỆᙸᡫẲ ⁅⁛‵⇊∙⇚⇩⇮↝ ⇊∙⇧ܱ҄ྵ 䞉 㛗ᑻ䠖㻡㻜㼙㼙 䞉 㧗ရ㉁䠖㌿ᐦᗘ䍺㻝㻜㻜㻜㼏㼙㻙㻞 䞉 㧗㏿ᡂ㛗䠖䍻㻡㻜㻜䃛㼙㻛㼔 䞉 㻢䜲䞁䝏㧗ᆒ୍䞉పḞ㝗䜶䝢 ᵏᵓᵓᶋᶋ 䞉 䝇䞊䝟䞊䝆䝱䞁䜽䝅䝵䞁ᵓ㐀 䞉 㧗⪏ᅽ䝖䝺䞁䝏㻹㻻㻿 䞉 㧗㏿ཌ⭷䜶䝢ᡂ㛗ᢏ⾡ 䞉 䝬䝹䝏䜶䝢ἲ㻛䝖䝺䞁䝏ᇙᡠἲ Si-face Source Gate c-axis n+ 䠄᪥㐍ศᐊ䠅 ᡂ㛗⤖ᬗ┿ p+ Gate 2nd implantation at 5.5 MeV 5.5 Pm p-base a-face SiO2 n+ p n 2.5Pm 2.5Pm p n p 1st implantation at 7 MeV Cross-sectional SEM image a-axis 䜺䝇ἲ C-face • 4䜲䞁䝏䚸43mm • ᡂ㛗㏿ᗘ䠖 3.6mm/h 䠄᪥㐍ศᐊ䠅 SiC ConventionalPN-TEG ⪏ᅽ䠖3800V ≉ᛶ䜸䞁ᢠ䠖8.3m:cm2 SJ-PN-TEG (TCAD simulation) SJ-PN-TEG ⁐ᾮἲ 50mm 2012.08 : 䝕䞁䝋䞊 䝥䝺䝇䝸䝸䞊䝇 ᅜෆึ 䠒䜲䞁䝏ᐇ⌧ 䠄ᐩὠᣐⅬ䠅 ୡ⏺᭱㧗ရ㉁䠆 䠒䜲䞁䝏ᐇド 䠄᪥㐍ศᐊ䠅 70mm 䠆䠖㌿ᐦᗘ䠖㻤㻢㻟ಶ㻛㼏㼙㻞 (Experimental result) • Al, Nྠῧຍ䛷 p, nఏᑟᆺไᚚ • ᣑᡂ㛗㒊䛷 ㉸పḞ㝗 䠄䛴䛟䜀㞟୰◊䠅 Best Paper Award@ISPSD2014 䢵䢰䢵䣭䣘⣭儬児兗儥䣏䣑䣕䢯䣈䣇䣖 兂兏儥儌儸䣕䣌䢯儤儈儎兠儭 Ṽ ᭗᎑ןᵱᶇᵡἙἢỶἋỉἉἋἘἲܱᘺ 䠄ఀศᐊ䠅 ➨㻟ୡ௦⤖ᬗᡂ㛗ᢏ⾡ 㻢䇿㻿㼕㻯䜴䜵䝝䛾ᐇ⌧ 䞉 ᐜ㔞㧗⪏ᅽ㻹㻻㻿 䋻㻌ᐜ㔞儹兏䣕䣫䣅儵兓兠兆儜光兠兏 ᭗јྙ⇌⇍⇵ьɟᝦ⇽∓⇡⇟ 兟 㕲㐨㌴୧䛻ᦚ㍕䚸ᦆኻ๐ῶ䜢ᐇド䠄䕦㻡㻡㻑 㼢㼟 㻿㼕㻙㻵㻳㻮㼀䠅 䞉 ཱྀᚄᑐᛂ᪂つ䜴䜵䝝ຍᕤせ⣲䝥䝻䝉䝇㧗ᗘ 䞉 ୍㈏ຍᕤ䝥䝻䝉䝇䛸䛧䛶䛾㧗ຠ⋡ ᭗᎑༏ᢿԼỉܱᘺؕႴ২ᘐ 䠒䜲䞁䝏୍㈏ຍᕤᕤ⛬䠖䠕䠊䠓䠤䜢ᐇ⌧ ษ᩿䠄9h)䠇୰㛫ᕤ⛬[◊๐䡡◊☻](20min௨ෆ)䠇䠟䠩䠬(⣙20min) 㻞ẁ㝵㻯㻹㻼 㧗㏿䞉㧗ရ㉁୧❧ 㙾㠃◊๐ 㻏㻤㻜㻜㻜 Ṽ ᎑༏ᢿԼỉ᭗ภܱᘺ২ᘐỉӧᏡࣱܱᚰ 䞉 㧗⪏⇕㒊ရ䛾㛤Ⓨ䠄㻲㻯㻾㻭䠗儹儅儈兗償免元儧儓儝ᢏ◊⤌ྜ䠅 䞉 㻿㼕㻯⣲Ꮚ䛾㏆ഐ䛻㧗⪏⇕㒊ရ䜢ᐇ䛩䜛❧యᐇ 㻯㻹㻼 ᙉ㓟ᆺ䠄㧗㏿䠅 㻯㻹㻼㧗㏿ Ṽ ࣱ̮᫂ỉỸỹἡെ᨞ỂỉʖยửӧᏡỆ έᬝ↝⋄⋟⊱⋁⋎⋟⊱⊾ನሰ↖Οˮࣱᄩ̬ 䞉 㧗ศゎ⬟⏬ീ䛻䜘䜛Ḟ㝗ㄆ㆑ 㻯㻙㻰㻵㻯䠇㻼㻸⏬ീ 䞉 㟁≉䛸Ḟ㝗䛾⣣䛴䛡䚸⤫ィฎ⌮ 䞉 Ḟ㝗ᵓ㐀䛸ᙧᡂ䝯䜹䝙䝈䝮ゎᯒ 㧗⪏⇕㓄⥺ᇶ ᯈ 䝠䞊䝖䝅䞁䜽 㧗⪏⇕ᢠ SiC⣲Ꮚ 䠄225Υືస䠅 㧗⪏⇕ᨺ⇕ᇶᯈ ཷື㒊ရΰ㍕ᙧ㧗 ືస䝰䝆䝳䞊䝹䠄1.2kV-50A䚸Tjmax䠖250Υ䠅 40 Ps/div 25V 10 A/div Vgs:5 V/div 50 A 㧗㏿ษ᩿ᢏ⾡ 㧗⪏⇕䝁䞁䝕䞁䝃 100 V/div 600 V 㻯㻹㻼㻌 ゐ፹ᛂᆺ䠄↓₯യ䠅 40 ns/div -5V ⤫ྜホ౯儻免儧儬儹儍兠兄 225Υ䝩䝑䝖䝥䝺䞊䝖ୖ䛷50A䝇䜲䝑䝏䞁䜾ືస䜢☜ㄆ 䛊ཧ⏬ᶵ㛵䛋 ᪫䝎䜲䝲䝰䞁䝗ᕤᴗ䞞䚸䜹䝹䝋䝙䝑䜽䜹䞁䝉䜲䞞䚸䝃䞁䜿䞁㟁Ẽ䞞䚸㟁ᕤ䞞䚸᪂᪥ᮏ〇㚩ఫ㔠䞞䚸䞞䝍䜹䝖䝸䚸䞞䝕䜱䝇䝁䚸䞞䝕䞁䝋䞊䚸䞞ᮾⰪ䚸䞞ᮾ䝺䝸䝃䞊䝏䝉䞁䝍䞊䚸䝖䝶䝍⮬ື㌴䞞䚸䞞㇏⏣୰ኸ◊✲ᡤ䚸㇏⏣㏻ၟ䞞䚸 ᪥⏘⮬ື㌴䞞䚸䝟䝘䝋䝙䝑䜽䞞䚸᪥❧ᡂ䞞䚸䞞᪥❧〇సᡤ䚸ᐩኈ㟁ᶵ䞞䚸䞞䝣䝆䝭䜲䞁䝁䞊䝫䝺䞊䝔䝑䝗䚸䞞ᮏ⏣ᢏ⾡◊✲ᡤ䚸୕⳻㟁ᶵ䞞䚸䞞᫂㟁⯋䚸䝻䞊䝮䞞䚸㻔⊂㻕⏘ᴗᢏ⾡⥲ྜ◊✲ᡤ䚸㛵すᏛ㝔Ꮫ䚸㟁୰◊䚸ྡ䚸㜰䚸ྡᕤ䚸 ୰㒊䚸ᶓᅜ䚸≀ᮦᶵᵓ䚸ᮾ ২ᘐᄂᆮኵӳഏɭˊἣὁὊỺἾἁἚἿἝἁἋᄂᆮႆೞನίᵤᵳᵮᵣᵲὸ ἩἿἊỹἁἚἼὊἒ ᇌᄂᆮႆඥʴ ငಅ২ᘐዮӳᄂᆮ ښ Ψ
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