XPDV2320R 50 GHz Photodetector Product Brief

50 GHz Photodetector
XPDV2320R
PRODUCT BRIEF
KEY FEATURES
OVERVIEW
High bandwidth with flat response
The photodetector XPDV2320R is designed to exhibit an optimized frequency
response in both, power and phase. It is ideally suited for OC-768/STM-256
long haul systems. The high power capability of up to 10 dBm allows for use
of optical amplification at the detector input, and results in a high output
voltage swing of up to 1V avoiding the need for electrical amplification. The
photodetector is optimized for dual operations at 1310 nm as well as 1550
nm.
Excellent pulse behavior
Unsurpassed High-Power handling
capability
High responsivity
Support of 1300 and 1550 nm
Unique on-chip integrated bias
network
Well matched to 50 Ω
APPLICATIONS
 DWDM
 Communication systems at 40 Gb/s
(OC-768) and beyond
Microwave Photonics of up to 60 GHz
High-Speed Lightwave characterization
A waveguide integrated pin diode provides an excellent linearity, high
responsivity and a superior flatness of the RF response. An integrated biasing
network guarantees a highly reliable component.
50 GHz Photodetector
BLOCK DIAGRAM AND TYPICAL PERFORMANCE
100 nF *
PD chip
250
0
200
50Ω
40 pF
30Ω
100 nF
1
V bias
Response (mV)
rf out
Response (dB)
optical
connector
3
-3
-6
150
100
50
-9
2
* optional
-12
GND
0
0
10
20
30
Frequency (GHz)
40
-50
50
0
50
Time (ps)
100
OPERATING CONDITIONS
Parameter
Symbol
Operating Case Temperature
Tcase
Relative Humidity
Wavelength Range
Condition
Min
RH
non condensing
λ
1)
Average Optical Input Power Range
Popt
Photodiode Reverse Voltage
VPD
Typ
Max
Unit
0
+75
°C
5
85
%
1300
1330
nm
1530
1620
nm
10
dBm
2.8
3.3
3.8
V
Min
Typ
Max
Unit
OPTICAL AND ELECTRICAL SPECIFICATIONS 1
Parameter
Symbol
Condition
R
optimum polarization
Photodiode DC Responsivity
XPDV2320R @ 1310 nm
XPDV2320R @ 1550 nm
0.45
A/W
0.65
A/W
Polarization Dependent Loss
XPDV2320R @ 1310 nm
PDL
XPDV2320R @ 1550 nm
0.4
0.7
dB
0.3
0.5
dB
dB
Optical Return Loss
XPDV2320R @ 1310 nm
ORL
24
XPDV2320R @ 1550 nm
27
3dB cut-off Frequency
f3dB
2)
Photodiode Dark Current
Idark
Tcase = 25°C
5
200
nA
3)
9
10
ps
Pulse Width
Notes:
45
50
GHz
1) λ = 1550 nm, Vbias = 2.8 V, T = 25°C
2) Measured using Agilent 50 GHz Lightwave component analyzer
3) Measured using Tektronix oscilloscope with 50 GHz sampling head
Visit our website
1389 Moffett Park Drive
Sunnyvale, CA 94089
Phone: +1 408-548-1000
Sales:
+1 408-541-5690
Email: [email protected]
www.finisar.com
©2014 Finisar Corporation. All rights reserved. Finisar is a registered trademark of Finisar Corporation.
Features and specifications are subject to change without notice. 2/14