TECHNICAL INFORMATION

Toray Research Center, Inc.
TECHNICAL
INFORMATION
T00134
Electrical Characterisation of materials by Mercury Probe
Capacitance Voltage Measurement (MCV)
Hg
１．Experimental
MOS
SCHOTTKY
Electrical properties of semiconductors or dielectrics (Low-k, High-k materials) in
MOS devices can be characterized by MCV without electrode deposition.
２．Applications and characteristics
Application
■Determining of Oxide Charge （ＶＦＢ）
■Interface traps measurement （Ｄｉｔ）
■Resistivity profiling （ρ）
Characteristics
■ Electrode deposition have no use
due to Mercury Probe System.
■ Carrier density profiling (PID)
■Good precision
SCHOTTKY ：０．３％（１σ）
ＭＯＳ
：０．１％（１σ）
■Carrier life time measurement （τｇ）
■ Good precision and sensitivity
■Permittivity / Relative dielectric
condtant （ε/ k-value）
■Mapping data of wafer can be
obtained.
■Dielectric integrity and reliability
（ＴＺＤＢ，ＴＤＤＢ）
Toray Research
Center, Inc.
株式会社
東レリサーチセンター
(1/2)
T00134表面科学第２研究室20131205
STC：開(20141121)
３．Examples of CV measurement by Mercury Probe System
Typical C-V curves of SiO2 film (50 nm thickness )
1200
O3 TEOS SiO2
Forward
Reverse
Capacitance / pF
1000
Thermal SiO2
Forward
Reverse
800
ヒステリシス
Hysteresis
600
Vfb
shift
Vfb シフト
400
200
Plasma TEOS SiO2
Forward
Reverse
0
-10
-8
-6
-4
Gate Voltage / V
-2
0
2
“Forward” indicates C-V curve obtained from the gate voltage swept
from negative to positive whereas “Reverse” indicates that from positive
to negative.
We can find the differences of film properties from C-V analysis.
（１）”Vfb shift” indicates that the plasma TEOS film has positive fixed
charges.
（２）”Hysteresis” indicates that the O3-oxidized TEOS film has positive
mobile charges (Na+, K+, Li+, etc.).
（３）The thermal oxidized SiO2 film has good properties compared with
other films.
Toray Research
Center, Inc.
株式会社
東レリサーチセンター
(2/2)
T00134表面科学第２研究室20131205
STC：開(20141121)

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