ҩည٧͇ IGBT CONTENTS B ■ Ignition IGBT P. B8 ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ P. B9 ࣂ ISO/TS 16949 ᝢ www.rohm.com.cn Ὠὦὡέ ■ Field Stop Trench IGBT ・・・・・・・・・・・・・・・・・・・・・・・・・・・ ҩည٧͇ IGBT ▶Field Stop Trench IGBT Field Stop Trench IGBT ● Field Stop Trench IGBT ঋᤳԟᏥ Surface Mounted type Leaded type VCES IC (V) (A) 〈Tc=25℃〉〈Tc=100℃〉 TO-252 (D-PAK) LPDS (D2-PAK) TO-247N SCSOA guaranteed High Speed Switching − Built in FRD 4 650V RGT8BM65D 1 RGT8NS65D 2 3 8 RGT16NS65D 15 RGT30NS65D 4 20 RGT40NS65D 5 Built in FRD RGT40TS65D 6 RGTH40TS65 11 RGTH40TS65D 25 RGT50TS65D 7 RGTH50TS65 12 RGTH50TS65D 16 17 30 RGT60TS65D 8 RGTH60TS65 13 RGTH60TS65D 18 40 RGT80TS65D 9 RGTH80TS65 14 RGTH80TS65D 19 50 RGT00TS65D 10 RGTH00TS65 15 RGTH00TS65D 20 Field Stop Trench IGBT No. B Part No. IC(A) IF(Diode)(A) VCES (V) Tc=100℃ PD (W) VCE(sat) typ. (V) tsc min. (μsec) Tc=25℃ Tc=100℃ VF(Diode) typ. (V) Package Tc=25℃ TO-252 1 RGT8BM65D 650 8 4 62 1.65 5 7 4 1.45 2 RGT8NS65D 650 8 4 65 1.65 5 7 4 1.45 3 RGT16NS65D 650 16 8 94 1.65 5 16 8 1.4 4 RGT30NS65D 650 30 15 133 1.65 5 26 15 1.5 5 RGT40NS65D 650 40 20 161 1.65 5 35 20 1.45 1.45 Equivalent Circuit Diagram LPDS Ὠὦὡέ 6 RGT40TS65D 650 40 20 144 1.65 5 35 20 7 RGT50TS65D 650 48 25 174 1.65 5 35 20 1.45 8 RGT60TS65D 650 55 30 194 1.65 5 40 20 1.35 9 RGT80TS65D 650 70 40 234 1.65 5 40 20 1.35 10 RGT00TS65D 650 85 50 277 1.65 5 50 30 1.45 11 RGTH40TS65 650 40 20 144 1.6 − − − − 12 RGTH50TS65 650 50 25 174 1.6 − − − − 13 RGTH60TS65 650 58 30 194 1.6 − − − − 14 RGTH80TS65 650 70 40 234 1.6 − − − − 15 RGTH00TS65 650 85 50 277 1.6 − − − − 16 RGTH40TS65D 650 40 20 144 1.6 − 35 20 1.45 17 RGTH50TS65D 650 50 25 174 1.6 − 35 20 1.45 18 RGTH60TS65D 650 58 30 194 1.6 − 40 20 1.35 19 RGTH80TS65D 650 70 40 234 1.6 − 40 20 1.35 20 RGTH00TS65D 650 85 50 277 1.6 − 50 30 1.45 * TO-247N * ὉЮᎵFRD B8 www.rohm.com.cn ҩည٧͇ IGBT ▶Ignition IGBT Ignition IGBT ● Ignition IGBT ၸΒ Boost coil IGBT + Battery − Spark plug B IC G 5V Generator S Ignition IGBT Part No. ☆RGPZ10BM40 VCES (V) VGE (V) Ic (A) PD (W) Eas (mJ) VCE(sat) typ. (V) 430±30 ±10 10 107 250 1.6 Package Equivalent Circuit Diagram TO-252 ☆RGPR10BM40 ±10 430±30 10 107 250 1.6 B ■ֵՏౝឬ R G T H 4 0 ① ② ③ T S ④ ① IGBT ② ROHMጆѴՏሥ ③ ႂึ[IC] 〈TC=100℃〉 Β 8 → 4A 16 → 8A 30 → 15A 40 → 20A 00 → 50A ④NJᜈ Β BM → TO-252 NS → LPDS TS → TO-247N 6 5 D ⑤ ⑥ ⑤NJႂԌ[VCES] Β 65 → 650V ⑥NJథЮᎵFRD NJNJΒNJD → ЮᎵFRD ■ࡆࠩ (Ӭͮ : mm) TO-252 LPDS TO-247N(3pin) (D2-PAK)〈TO-263〉 〔SC-83〕 2.2 0.5 2.3 0.75 0.5 0.9 2.1±0.2 0.76 5.0±0.2 2.0±0.2 20.0±0.3 10.0 (3) 0.8 (1)(2) 0.85 2.9 6.1 (4) φ3.6±0.1 21.0±0.3 6.6 5.2 4.0±0.2 1.0 6.0±0.2 16.0±0.3 1.2±0.2 3.1±0.2 0.62 0.6±0.15 2.4±0.3 5.45 Each lead has same dimensions Each lead has same dimensions Each lead has same dimensions www.rohm.com.cn B9 Ὠὦὡέ ☆:धԦ˖
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