IRG8CH20K10F INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC(Nominal) = 15A TJ(max) = 175°C G VCE(on) typ = 1.7V @ IC= 15A E n-channel Applications Industrial Motor Drives UPS HEV Inverter Welding G C E Gate Collector Emitter Features Low VCE(on) Trench IGBT Technology Benefits High Efficiency in a Wide Range of Applications Low Switching Losses Suitable for a Wide Range of Switching Frequencies Very Soft Turn-off Characteristics Reduced EMI and Overvoltage in Motor Drive Applications 10µs Short Circuit SOA Rugged Transient Performance for Increased Reliability Square RBSOA Tight Parameter Distribution Positive VCE(on) Temperature Coefficient Tj(max) = 175°C Increased Reliability Base part number Package Type IRG8CH20K10F Die on Film Mechanical Parameter Die Size Minimum Street Width Emiter Pad Size (Included Gate Pad) Gate Pad Size Area Total / Active Thickness Wafer Size Notch Position Maximum-Possible Chips per Wafer Passivation Front side Front Metal Backside Metal Die Bond Reject Ink Dot Size 1 www.irf.com Excellent Current Sharing in Parallel Operation © 2014 International Standard Pack Form Quantity Wafer 1 Orderable part number IRG8CH20K10F 4.71 x 4.26 mm2 75 µm See Die Drawing 1.0 x 0.6 mm2 20 /10 140 µm 200 mm 0 Degrees 1372 pcs. Silicon Nitride, Polyimide Al, Si (4µm) AI, Ti, Ni, Ag Electrically conductive epoxy or solder 0.25 mm diameter minimum Submit Datasheet Feedback February 11, 2014 IRG8CH20K10F Maximum Ratings Parameter Collector-Emitter Voltage, TJ=25°C DC Collector Current Clamped Inductive Load Current Gate Emitter Voltage Operating Junction and Storage Temperature VCE IC ILM VGE TJ, TSTG Static Characteristics (Tested on wafers) @ TJ=25°C Parameter Min. V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 VCE(sat) Collector-to-Emitter Saturated Voltage ––– VGE(th) Gate-Emitter Threshold Voltage 5.0 ICES Zero Gate Voltage Collector Current ––– IGES Gate Emitter Leakage Current ––– Typ. ––– ––– ––– 1.0 ––– Max. 1200 45 ± 30 -40 to +175 Units V A A V °C Max. Units Conditions ––– VGE = 0V, IC = 250µA 2.0 V V GE = 15V, IC = 15A, TJ = 25°C 6.5 IC = 600µA , VGE = VCE 25 µA VCE = 1200V, VGE = 0V ± 100 nA VCE = 0V, VGE = ±30V Electrical Characteristics (Not subject to production test- Verified by design/characterization) Parameter Collector-to-Emitter Saturated Voltage Min. ––– ––– 10 Typ. 1.7 2.1 ––– Max. Units Conditions ––– VGE = 15V, IC = 15A , TJ = 25°C VCE(sat) V ––– VGE = 15V, IC = 15A , TJ = 175°C SCSOA Short Circuit Safe Operating Area ––– µs VGE=15V, VCC=600V VP ≤1200V,TJ=150°C RBSOA Reverse Bias Safe Operating Area TJ = 175°C, IC = 45A FULL SQUARE VCC = 960V, Vp 1200V VGE = +20V to 0V Ciss Input Capacitance ––– 1790 ––– VGE = 0V Coss Output Capacitance ––– 70 ––– pF VCE = 30V ƒ = 1.0MHz Crss Reverse Transfer Capacitance ––– 50 ––– Qg Total Gate Charge (turn-on) — 100 — IC = 15A Qge Gate-to-Emitter Charge (turn-on) — 9.0 — nC VGE = 15V VCC = 600V Qgc Gate-to-Collector Charge (turn-on) — 60 — Switching Characteristics (Inductive Load-Not subject to production test-Verified by design/characterization) Parameter Min. Typ. Max. Units Conditions td(on) Turn-On delay time — 40 — IC = 15A, VCC = 600V RG = 22, VGE=15V tr Rise time — 20 — TJ = 25°C td(off) Turn-Off delay time — 290 — tf Fall time — 150 — ns td(on) Turn-On delay time — 40 — IC = 15A, VCC = 600V RG = 22, VGE=15V tr Rise time — 20 — TJ = 175°C td(off) Turn-Off delay time — 360 — tf Fall time — 410 — Notes: The current in the application is limited by TJMax and the thermal properties of the assembly. VCC = 80% (VCES), VGE = 20V. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Actual test limits take into account additional losses in the measurement setup. Pulse width ≤ 400µs; duty cycle ≤ 2%. Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 11, 2014 IRG8CH20K10F Die Drawing NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MICRO-METER 2. CONTROLLING DIMENSION: MICRO-METER 3. DIE WIDTH AND LENGTH TOLERANCE: -50µm 4. DIE THICKNESS = 140 MICRO-METER REFERENCE: IRG8CH20K10F IRG8P25N120KDPBF IRG8P25N120KD-EPBF 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 11, 2014 IRG8CH20K10F Additional Testing and Screening For Customers requiring product supplied as Known Good Die (KGD) or requiring specific die level testing, please contact your local IR Sales Shipping Sawn Wafer on Film. Please contact your local IR sales office for non-standard shipping options Handling Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. Product must be handled only in a class 10,000 or better-designated clean room environment. Singulated die are not to be handled with tweezers. A vacuum wand with a non-metallic ESD protected tip should be used. Wafer/Die Storage Proper storage conditions are necessary to prevent product contamination and/or degradation after shipment. Note: To reduce the risk of contamination or degradation, it is recommended that product not being used in the assembly process be returned to their original containers and resealed with a vacuum seal process. Sawn wafers on a film frame are intended for immediate use and have a limited shelf life. Further Information For further information please contact your local IR Sales office. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 11, 2014
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