2SJ280(L), 2SJ280(S) データシート

2SJ280(L), 2SJ280(S)
シリコン P チャネル MOS FET
高速度電力スイッチング
R07DS1207JJ0100
Rev.1.00
特
長
LDPAK
4
• 低オン抵抗
4
• 低電圧駆動(4V 駆動)
• スイッチング速度が速い
• アバランシェ保証
1 2
1
絶 対 最 大 定 格
項
目
記号
定格値
単位
VDSS
–60
V
ゲート・ソース電圧
VGSS
±20
V
ID
–30
A
ID
1
(pulse)*
–120
A
IDR
–30
A
ドレイン電流
せん頭ドレイン電流
逆ドレイン電流
アバランシェ電流
アバランシェエネルギ
許容チャネル損失
IAP*
3
EAR*
–30
A
3
77
mJ
2
75
W
Pch*
チャネル温度
Tch
150
°C
保存温度
Tstg
–55~+150
°C
注) 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. TC = 25°C における許容値
3. Tch = 25°C における許容値,Rg ≥ 50Ω
3
3
D
(Ta = 25°C)
ドレイン・ソース電圧
2
G
S
1. ゲート
2. ドレイン
3. ソース
4. ドレイン
2SJ280(L), 2SJ280(S)
電
気
的
特
性
(Ta = 25°C)
記号
Min
ドレイン・ソース破壊電圧
V(BR)DSS
–60
—
—
V
ID = –10mA, VGS = 0
ゲート・ソース破壊電圧
V(BR)GSS
±20
—
—
V
IG = ±200µA, VDS = 0
ゲート遮断電流
IGSS
—
—
±10
µA
VGS = ±16V, VDS = 0
ドレイン電流
IDSS
—
—
–250
µA
VDS = –50V, VGS = 0
VGS(off)
–1.0
—
–2.25
V
VDS = –10V, ID = –1mA
|yfs|
17
25
—
S
VDS = –10V, ID = –15A*
RDS(on)
—
0.033
0.043
Ω
ID = –15A, VGS = –10V*
—
0.045
0.06
Ω
ID = –15A, VGS = –4V*
項
目
ゲート・ソース遮断電圧
順伝達アドミタンス
ドレイン・ソースオン抵抗
Typ
Max
単位
測定条件
入力容量
Ciss
—
3300
—
pF
VDS = –10V, VGS = 0,
出力容量
Coss
—
1500
—
pF
f = 1MHz
帰還容量
Crss
—
480
—
pF
ターン・オン遅延時間
td(on)
—
30
—
ns
VGS = –10V, ID = –15A,
tr
—
170
—
ns
RL = 2Ω
td(off)
—
500
—
ns
tf
—
390
—
ns
VDF
—
–1.5
—
V
IF = –30A, VGS = 0
trr
—
200
—
ns
IF = –30A, VGS = 0,
上昇時間
ターン・オフ遅延時間
下降時間
ダイオード順電圧
逆回復時間
diF / dt = 50A / µs
注) 1. パルス測定
2
1
1
1
2SJ280(L), 2SJ280(S)
Maximum Safe Operation Area
Power vs. Temperature Derating
–500
–300
s
D a
S( r
on ea
)
O
is pe
lim ra
ite tion
d in
by t
R his
=
)
°C
25
D (A)
Drain Current I
Drain Current I D (A)
μs
m
–10
s
–2.5 V
μs
Drain Current I D (A)
10
–30
–20
–50
–40
–3 V
c
(T
–40
–10
–30 –100
Typical Transfer Characteristics
Typical Output Characteristics
–10 V
–6 V
–4 V
–3.5 V
–3
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
–50
10
–3
Ta = 25°C
–1
–0.5
–0.1 –0.3
–1
150
=
100
m
50
1
0
–10
n
PW atio
r
pe
O
25
–30
0
10
50
–100
DC
Channel Dissipation Pch (W)
75
Tc = 25°C
–25°C
75°C
Pulse Test
–30 V = –10 V
GS
–20
–10
VGS = –2 V
0
0
–2
–4
–6
–8
–10
Drain to Source Voltage VDS (V)
0
–1
–2
–3
–4
–5
Gate to Source Voltage VGS (V)
3
2SJ280(L), 2SJ280(S)
Drain-Source Saturation Voltage
vs. Gate-Source Voltage
Static Drain-Source on State
Resistance vs. Drain Current
0.5
Pulse Test
–1.6
–1.2
I D = –30 A
–0.8
–20 A
Static Drain-Source on State
Resistance R DS(on) (Ω )
Drain to Source Saturation Voltage
V DS (on) (V)
–2.0
0.2
0.1
–10 A
–0.4
–10 V
0.02
0.01
0
–2
–4
–6
–8
–10
Gate to Source Voltage VGS (V)
0.005
–2
Static Drain-Source on State
Resistance vs. Temperature
0.08
0.06
100
Pulse test
I D = –30 A
0.04
0
–40
50
20
VGS = –4 V
–10 A, –20 A
0.02
–5 –10 –20
–50 –100 –200
Drain Current I D (A)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
|y fs | (s)
Static Drain-Source on State
Resistance RDS(on) ( Ω )
0.1
4
VGS = –4 V
0.05
–10 V
I D = –30 A
–10 A, –20 A
0
40
80
120
160
Case Temperature TC (°C)
Pulse Test
VDS = –10 V
Tc = 25°C
–25°C
75°C
10
5
2
1
–0.5 –1
–2
–5 –10 –20
Drain Current I D (A)
–50
2SJ280(L), 2SJ280(S)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain-Source Voltage
10000
Ciss
C (pF)
200
100
Capacitance
50
di/dt = 50 A/ μ s, VGS = 0
Ta = 25°C
20
10
5
–1
–60
–80
–100
0
VDD = –10 V
–25 V
–50 V
–4
VDS
–8
VDD = –10 V
–25 V
–50 V
I D = –30 A
40
80
120
160
Gate Charge Qg (nc)
VGS = 0,
f = 1 MHz
–10
–20
–30
Drain to Source Voltage
–40
–50
VDS (V)
1000
0
–12
VGS
–16
–20
200
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
–40
100
Switching Characteristics
Dynamic Input Characteristics
–20
Crss
10
0
–2
–5 –10 –20
–50 –100
Reverse Drain Current I DR (A)
0
Coss
1000
td(off)
Switching Time t (ns)
Reverse Recovery Time t rr (ns)
500
500
tf
200
100
tr
50
td(on)
20
10
–0.5 –1
VGS = –10 V, VDD =: –30 V
PW = 2 μs, duty <
= 1%
–2
–5 –10 –20
Drain Current I D (A)
–50
5
2SJ280(L), 2SJ280(S)
Maxmum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
100
(mJ)
AR
Pulse Test
–40
VGS = –10 V
–30
–20
–5 V
0, 5V
–10
0
0
I AP = –30 A
VDD = –25 V
duty < 0.1%
Rg >
=50 Ω
80
Repetive Avaranche Energy E
Reverse Drain Current
I DR (A)
–50
60
40
20
0
25
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
50
75
100
125
Channel Temperature Tch (°C)
Avalanche Test Circuit and Waveform
E AR =
VDS
Monitor
Rg
L
I AP
Monitor
D.U.T
VDSS
1 •L•I 2•
AP
2
VDSS – V DD
V(BR)DSS
I AP
VDD
ID
Vin
–15 V
50 Ω
0
6
VDD
VDS
150
Normalized Transient Thermal Impedance γS (t)
2SJ280(L), 2SJ280(S)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
1.0
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch–c (t) = γS (t) · θch–c
θch–c = 1.67°C/W, TC = 25°C
PDM
0.02
0.03
1
se
0.0 t Pul
o
h
0.01
10 μ
T
1S
100 μ
1m
10 m
Pulse Width PW (s)
100 m
D = PW
T
PW
1
10
Waveforms
Switching Time Test Circuit
Vin
10%
Vin Monitor
Vout Monitor
90%
D.U.T
50 Ω
Vin
–10 V
VDD
.
=. 30 V
90%
90%
RL
Vout
td (on)
10%
10%
tr
td (off)
tf
7
2SJ280(L), 2SJ280(S)
外
RENESAS Code
PRSS0004AE-A
Previous Code
LDPAK(L) / LDPAK(L)V
法
MASS[Typ.]
1.40g
1.3 ± 0.2
1.37 ± 0.2
2.54 ± 0.5
MASS[Typ.]
1.30g
(1.5)
(1.4)
4.44 ± 0.2
1.3 ± 0.15
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
10.2 ± 0.3
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
0.4 ± 0.1
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
2.54 ± 0.5
8
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
1.3 ± 0.2
Unit: mm
7.8
6.6
1.7
2.54 ± 0.5
RENESAS Code
PRSS0004AE-B
2.49 ± 0.2
11.0 ± 0.5
0.76 ± 0.1
JEITA Package Code
SC-83
Unit: mm
4.44 ± 0.2
1.3 ± 0.15
0.2
0.86 +– 0.1
Package Name
LDPAK(S)-(1)
図
10.2 ± 0.3
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
寸
7.8
7.0
JEITA Package Code
-
(1.4)
Package Name
LDPAK(L)
形
2.2
ࡈὀព᭩ࡁ
1. ᮏ㈨ᩱ࡟グ㍕ࡉࢀࡓᅇ㊰ࠊࢯࣇࢺ࢙࢘࢔࠾ࡼࡧࡇࢀࡽ࡟㛵㐃ࡍࡿ᝟ሗࡣࠊ༙ᑟయ〇ရࡢືస౛ࠊᛂ⏝౛ࢆㄝ᫂ࡍࡿࡶࡢ࡛ࡍࠋ࠾ᐈᵝࡢᶵჾ࣭ࢩࢫࢸ࣒ࡢタィ࡟࠾࠸
࡚ࠊᅇ㊰ࠊࢯࣇࢺ࢙࢘࢔࠾ࡼࡧࡇࢀࡽ࡟㛵㐃ࡍࡿ᝟ሗࢆ౑⏝ࡍࡿሙྜ࡟ࡣࠊ࠾ᐈᵝࡢ㈐௵࡟࠾࠸࡚⾜ࡗ࡚ࡃࡔࡉ࠸ࠋࡇࢀࡽࡢ౑⏝࡟㉳ᅉࡋ࡚ࠊ࠾ᐈᵝࡲࡓࡣ➨୕
⪅࡟⏕ࡌࡓᦆᐖ࡟㛵ࡋࠊᙜ♫ࡣࠊ୍ษࡑࡢ㈐௵ࢆ㈇࠸ࡲࡏࢇࠋ
2. ᮏ㈨ᩱ࡟グ㍕ࡉࢀ࡚࠸ࡿ᝟ሗࡣࠊṇ☜ࢆᮇࡍࡓࡵៅ㔜࡟సᡂࡋࡓࡶࡢ࡛ࡍࡀࠊㄗࡾࡀ࡞࠸ࡇ࡜ࢆಖドࡍࡿࡶࡢ࡛ࡣ࠶ࡾࡲࡏࢇࠋ୓୍ࠊᮏ㈨ᩱ࡟グ㍕ࡉࢀ࡚࠸ࡿ᝟ሗ
ࡢㄗࡾ࡟㉳ᅉࡍࡿᦆᐖࡀ࠾ᐈᵝ࡟⏕ࡌࡓሙྜ࡟࠾࠸࡚ࡶࠊᙜ♫ࡣࠊ୍ษࡑࡢ㈐௵ࢆ㈇࠸ࡲࡏࢇࠋ
3. ᮏ㈨ᩱ࡟グ㍕ࡉࢀࡓ〇ရࢹ㸫ࢱࠊᅗࠊ⾲ࠊࣉࣟࢢ࣒ࣛࠊ࢔ࣝࢦࣜࢬ࣒ࠊᛂ⏝ᅇ㊰౛➼ࡢ᝟ሗࡢ౑⏝࡟㉳ᅉࡋ࡚Ⓨ⏕ࡋࡓ➨୕⪅ࡢ≉チᶒࠊⴭసᶒࡑࡢ௚ࡢ▱ⓗ㈈⏘ᶒ
࡟ᑐࡍࡿ౵ᐖ࡟㛵ࡋࠊᙜ♫ࡣࠊఱࡽࡢ㈐௵ࢆ㈇࠺ࡶࡢ࡛ࡣ࠶ࡾࡲࡏࢇࠋᙜ♫ࡣࠊᮏ㈨ᩱ࡟ᇶ࡙ࡁᙜ♫ࡲࡓࡣ➨୕⪅ࡢ≉チᶒࠊⴭసᶒࡑࡢ௚ࡢ▱ⓗ㈈⏘ᶒࢆఱࡽチ
ㅙࡍࡿࡶࡢ࡛ࡣ࠶ࡾࡲࡏࢇࠋ
4. ᙜ♫〇ရࢆᨵ㐀ࠊᨵኚࠊ」〇➼ࡋ࡞࠸࡛ࡃࡔࡉ࠸ࠋ࠿࠿ࡿᨵ㐀ࠊᨵኚࠊ」〇➼࡟ࡼࡾ⏕ࡌࡓᦆᐖ࡟㛵ࡋࠊᙜ♫ࡣࠊ୍ษࡑࡢ㈐௵ࢆ㈇࠸ࡲࡏࢇࠋ
5. ᙜ♫ࡣࠊᙜ♫〇ရࡢရ㉁Ỉ‽ࢆࠕᶆ‽Ỉ‽ࠖ࠾ࡼࡧࠕ㧗ရ㉁Ỉ‽ࠖ࡟ศ㢮ࡋ࡚࠾ࡾࠊ
ྛရ㉁Ỉ‽ࡣࠊ௨ୗ࡟♧ࡍ⏝㏵࡟〇ရࡀ౑⏝ࡉࢀࡿࡇ࡜ࢆពᅗࡋ࡚࠾ࡾࡲࡍࠋ
ᶆ‽Ỉ‽㸸
ࢥࣥࣆ࣮ࣗࢱࠊOAᶵჾࠊ㏻ಙᶵჾࠊィ ᶵჾࠊAVᶵჾࠊ
ᐙ㟁ࠊᕤసᶵᲔࠊࣃ࣮ࢯࢼࣝᶵჾࠊ⏘ᴗ⏝ࣟ࣎ࢵࢺ➼
㧗ရ㉁Ỉ‽㸸 ㍺㏦ᶵჾ㸦⮬ື㌴ࠊ㟁㌴ࠊ⯪⯧➼㸧ࠊ஺㏻⏝ಙྕᶵჾࠊ
㜵⅏࣭㜵≢⿦⨨ࠊྛ✀Ᏻ඲⿦⨨➼
ᙜ♫〇ရࡣࠊ┤᥋⏕࿨࣭㌟య࡟༴ᐖࢆཬࡰࡍྍ⬟ᛶࡢ࠶ࡿᶵჾ࣭ࢩࢫࢸ࣒㸦⏕࿨⥔ᣢ⿦⨨ࠊேయ࡟ᇙࡵ㎸ࡳ౑⏝ࡍࡿࡶࡢ➼㸧 ࠊࡶࡋࡃࡣከ኱࡞≀ⓗᦆᐖࢆⓎ⏕ࡉ
ࡏࡿ࠾ࡑࢀࡢ࠶ࡿᶵჾ࣭ࢩࢫࢸ࣒㸦ཎᏊຊไᚚࢩࢫࢸ࣒ࠊ㌷஦ᶵჾ➼㸧࡟౑⏝ࡉࢀࡿࡇ࡜ࢆពᅗࡋ࡚࠾ࡽࡎࠊ౑⏝ࡍࡿࡇ࡜ࡣ࡛ࡁࡲࡏࢇࠋ ࡓ࡜࠼ࠊពᅗࡋ࡞࠸⏝
㏵࡟ᙜ♫〇ရࢆ౑⏝ࡋࡓࡇ࡜࡟ࡼࡾ࠾ᐈᵝࡲࡓࡣ➨୕⪅࡟ᦆᐖࡀ⏕ࡌ࡚ࡶࠊᙜ♫ࡣ୍ษࡑࡢ㈐௵ࢆ㈇࠸ࡲࡏࢇࠋ ࡞࠾ࠊࡈ୙᫂Ⅼࡀ࠶ࡿሙྜࡣࠊᙜ♫Ⴀᴗ࡟࠾ၥ࠸
ྜࢃࡏࡃࡔࡉ࠸ࠋ
6. ᙜ♫〇ရࢆࡈ౑⏝ࡢ㝿ࡣࠊᙜ♫ࡀᣦᐃࡍࡿ᭱኱ᐃ᱁ࠊືస㟁※㟁ᅽ⠊ᅖࠊᨺ⇕≉ᛶࠊᐇ⿦᮲௳ࡑࡢ௚ࡢಖド⠊ᅖෆ࡛ࡈ౑⏝ࡃࡔࡉ࠸ࠋᙜ♫ಖド⠊ᅖࢆ㉸࠼࡚ᙜ♫〇
ရࢆࡈ౑⏝ࡉࢀࡓሙྜࡢᨾ㞀࠾ࡼࡧ஦ᨾ࡟ࡘࡁࡲࡋ࡚ࡣࠊᙜ♫ࡣࠊ୍ษࡑࡢ㈐௵ࢆ㈇࠸ࡲࡏࢇࠋ
7. ᙜ♫ࡣࠊᙜ♫〇ရࡢရ㉁࠾ࡼࡧಙ㢗ᛶࡢྥୖ࡟ດࡵ࡚࠸ࡲࡍࡀࠊ༙ᑟయ〇ရࡣ࠶ࡿ☜⋡࡛ᨾ㞀ࡀⓎ⏕ࡋࡓࡾࠊ౑⏝᮲௳࡟ࡼࡗ࡚ࡣㄗືసࡋࡓࡾࡍࡿሙྜࡀ࠶ࡾࡲ
ࡍࠋࡲࡓࠊᙜ♫〇ရࡣ⪏ᨺᑕ⥺タィ࡟ࡘ࠸࡚ࡣ⾜ࡗ࡚࠾ࡾࡲࡏࢇࠋᙜ♫〇ရࡢᨾ㞀ࡲࡓࡣㄗືసࡀ⏕ࡌࡓሙྜࡶࠊே㌟஦ᨾࠊⅆ⅏஦ᨾࠊ♫఍ⓗᦆᐖ➼ࢆ⏕ࡌࡉࡏ
࡞࠸ࡼ࠺ࠊ࠾ᐈᵝࡢ㈐௵࡟࠾࠸࡚ࠊ෕㛗タィࠊᘏ↝ᑐ⟇タィࠊㄗືస㜵Ṇタィ➼ࡢᏳ඲タィ࠾ࡼࡧ࢚࣮ࢪࣥࢢฎ⌮➼ࠊ࠾ᐈᵝࡢᶵჾ࣭ࢩࢫࢸ࣒࡜ࡋ࡚ࡢฟⲴಖド
ࢆ⾜ࡗ࡚ࡃࡔࡉ࠸ࠋ≉࡟ࠊ࣐࢖ࢥࣥࢯࣇࢺ࢙࢘࢔ࡣࠊ༢⊂࡛ࡢ᳨ドࡣᅔ㞴࡞ࡓࡵࠊ࠾ᐈᵝࡢᶵჾ࣭ࢩࢫࢸ࣒࡜ࡋ࡚ࡢᏳ඲᳨ドࢆ࠾ᐈᵝࡢ㈐௵࡛⾜ࡗ࡚ࡃࡔࡉ࠸ࠋ
8. ᙜ♫〇ရࡢ⎔ቃ㐺ྜᛶ➼ࡢヲ⣽࡟ࡘࡁࡲࡋ࡚ࡣࠊ〇ရಶู࡟ᚲࡎᙜ♫Ⴀᴗ❆ཱྀࡲ࡛࠾ၥྜࡏࡃࡔࡉ࠸ࠋࡈ౑⏝࡟㝿ࡋ࡚ࡣࠊ≉ᐃࡢ≀㉁ࡢྵ᭷࣭౑⏝ࢆつไࡍࡿ
RoHSᣦ௧➼ࠊ㐺⏝ࡉࢀࡿ⎔ቃ㛵㐃ἲ௧ࢆ༑ศㄪᰝࡢ࠺࠼ࠊ࠿࠿ࡿἲ௧࡟㐺ྜࡍࡿࡼ࠺ࡈ౑⏝ࡃࡔࡉ࠸ࠋ࠾ᐈᵝࡀ࠿࠿ࡿἲ௧ࢆ㑂Ᏺࡋ࡞࠸ࡇ࡜࡟ࡼࡾ⏕ࡌࡓᦆᐖ࡟
㛵ࡋ࡚ࠊᙜ♫ࡣࠊ୍ษࡑࡢ㈐௵ࢆ㈇࠸ࡲࡏࢇࠋ
9. ᮏ㈨ᩱ࡟グ㍕ࡉࢀ࡚࠸ࡿᙜ♫〇ရ࠾ࡼࡧᢏ⾡ࢆᅜෆእࡢἲ௧࠾ࡼࡧつ๎࡟ࡼࡾ〇㐀࣭౑⏝࣭㈍኎ࢆ⚗Ṇࡉࢀ࡚࠸ࡿᶵჾ࣭ࢩࢫࢸ࣒࡟౑⏝ࡍࡿࡇ࡜ࡣ࡛ࡁࡲࡏࢇࠋࡲ
ࡓࠊᙜ♫〇ရ࠾ࡼࡧᢏ⾡ࢆ኱㔞◚ቯරჾࡢ㛤Ⓨ➼ࡢ┠ⓗࠊ㌷஦฼⏝ࡢ┠ⓗࡑࡢ௚㌷஦⏝㏵࡟౑⏝ࡋ࡞࠸࡛ࡃࡔࡉ࠸ࠋᙜ♫〇ရࡲࡓࡣᢏ⾡ࢆ㍺ฟࡍࡿሙྜࡣࠊࠕእ
ᅜⅭ᭰ཬࡧእᅜ㈠᫆ἲࠖࡑࡢ௚㍺ฟ㛵㐃ἲ௧ࢆ㑂Ᏺࡋࠊ࠿࠿ࡿἲ௧ࡢᐃࡵࡿ࡜ࡇࢁ࡟ࡼࡾᚲせ࡞ᡭ⥆ࢆ⾜ࡗ࡚ࡃࡔࡉ࠸ࠋ
10. ࠾ᐈᵝࡢ㌿኎➼࡟ࡼࡾࠊᮏࡈὀព᭩ࡁグ㍕ࡢㅖ᮲௳࡟᢬ゐࡋ࡚ᙜ♫〇ရࡀ౑⏝ࡉࢀࠊࡑࡢ౑⏝࠿ࡽᦆᐖࡀ⏕ࡌࡓሙྜࠊᙜ♫ࡣఱࡽࡢ㈐௵ࡶ㈇ࢃࡎࠊ࠾ᐈᵝ࡟࡚ࡈ㈇
ᢸࡋ࡚㡬ࡁࡲࡍࡢ࡛ࡈ஢ᢎࡃࡔࡉ࠸ࠋ
11. ᮏ㈨ᩱࡢ඲㒊ࡲࡓࡣ୍㒊ࢆᙜ♫ࡢᩥ᭩࡟ࡼࡿ஦๓ࡢᢎㅙࢆᚓࡿࡇ࡜࡞ࡃ㌿㍕ࡲࡓࡣ」〇ࡍࡿࡇ࡜ࢆ⚗ࡌࡲࡍࠋ
ὀ1. ᮏ㈨ᩱ࡟࠾࠸࡚౑⏝ࡉࢀ࡚࠸ࡿࠕᙜ♫ࠖ࡜ࡣࠊࣝࢿࢧࢫ ࢚ࣞࢡࢺࣟࢽࢡࢫᰴᘧ఍♫࠾ࡼࡧࣝࢿࢧࢫ ࢚ࣞࢡࢺࣟࢽࢡࢫᰴᘧ఍♫ࡀࡑࡢ⥲ᰴ୺ࡢ㆟Ỵᶒࡢ㐣༙ᩘ
ࢆ┤᥋ࡲࡓࡣ㛫᥋࡟ಖ᭷ࡍࡿ఍♫ࢆ࠸࠸ࡲࡍࠋ
ὀ2. ᮏ㈨ᩱ࡟࠾࠸࡚౑⏝ࡉࢀ࡚࠸ࡿࠕᙜ♫〇ရࠖ࡜ࡣࠊὀ㸯࡟࠾࠸࡚ᐃ⩏ࡉࢀࡓᙜ♫ࡢ㛤Ⓨࠊ〇㐀〇ရࢆ࠸࠸ࡲࡍࠋ
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