2SJ280(L), 2SJ280(S) シリコン P チャネル MOS FET 高速度電力スイッチング R07DS1207JJ0100 Rev.1.00 特 長 LDPAK 4 • 低オン抵抗 4 • 低電圧駆動（4V 駆動） • スイッチング速度が速い • アバランシェ保証 1 2 1 絶 対 最 大 定 格 項 目 記号 定格値 単位 VDSS –60 V ゲート・ソース電圧 VGSS ±20 V ID –30 A ID 1 (pulse)* –120 A IDR –30 A ドレイン電流 せん頭ドレイン電流 逆ドレイン電流 アバランシェ電流 アバランシェエネルギ 許容チャネル損失 IAP* 3 EAR* –30 A 3 77 mJ 2 75 W Pch* チャネル温度 Tch 150 °C 保存温度 Tstg –55～+150 °C 注) 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. TC = 25°C における許容値 3. Tch = 25°C における許容値，Rg ≥ 50Ω 3 3 D (Ta = 25°C) ドレイン・ソース電圧 2 G S 1. ゲート 2. ドレイン 3. ソース 4. ドレイン 2SJ280(L), 2SJ280(S) 電 気 的 特 性 (Ta = 25°C) 記号 Min ドレイン・ソース破壊電圧 V(BR)DSS –60 — — V ID = –10mA, VGS = 0 ゲート・ソース破壊電圧 V(BR)GSS ±20 — — V IG = ±200µA, VDS = 0 ゲート遮断電流 IGSS — — ±10 µA VGS = ±16V, VDS = 0 ドレイン電流 IDSS — — –250 µA VDS = –50V, VGS = 0 VGS(off) –1.0 — –2.25 V VDS = –10V, ID = –1mA |yfs| 17 25 — S VDS = –10V, ID = –15A* RDS(on) — 0.033 0.043 Ω ID = –15A, VGS = –10V* — 0.045 0.06 Ω ID = –15A, VGS = –4V* 項 目 ゲート・ソース遮断電圧 順伝達アドミタンス ドレイン・ソースオン抵抗 Typ Max 単位 測定条件 入力容量 Ciss — 3300 — pF VDS = –10V, VGS = 0, 出力容量 Coss — 1500 — pF f = 1MHz 帰還容量 Crss — 480 — pF ターン・オン遅延時間 td(on) — 30 — ns VGS = –10V, ID = –15A, tr — 170 — ns RL = 2Ω td(off) — 500 — ns tf — 390 — ns VDF — –1.5 — V IF = –30A, VGS = 0 trr — 200 — ns IF = –30A, VGS = 0, 上昇時間 ターン・オフ遅延時間 下降時間 ダイオード順電圧 逆回復時間 diF / dt = 50A / µs 注) 1. パルス測定 2 1 1 1 2SJ280(L), 2SJ280(S) Maximum Safe Operation Area Power vs. Temperature Derating –500 –300 s D a S( r on ea ) O is pe lim ra ite tion d in by t R his = ) °C 25 D (A) Drain Current I Drain Current I D (A) μs m –10 s –2.5 V μs Drain Current I D (A) 10 –30 –20 –50 –40 –3 V c (T –40 –10 –30 –100 Typical Transfer Characteristics Typical Output Characteristics –10 V –6 V –4 V –3.5 V –3 Drain to Source Voltage VDS (V) Case Temperature Tc (°C) –50 10 –3 Ta = 25°C –1 –0.5 –0.1 –0.3 –1 150 = 100 m 50 1 0 –10 n PW atio r pe O 25 –30 0 10 50 –100 DC Channel Dissipation Pch (W) 75 Tc = 25°C –25°C 75°C Pulse Test –30 V = –10 V GS –20 –10 VGS = –2 V 0 0 –2 –4 –6 –8 –10 Drain to Source Voltage VDS (V) 0 –1 –2 –3 –4 –5 Gate to Source Voltage VGS (V) 3 2SJ280(L), 2SJ280(S) Drain-Source Saturation Voltage vs. Gate-Source Voltage Static Drain-Source on State Resistance vs. Drain Current 0.5 Pulse Test –1.6 –1.2 I D = –30 A –0.8 –20 A Static Drain-Source on State Resistance R DS(on) (Ω ) Drain to Source Saturation Voltage V DS (on) (V) –2.0 0.2 0.1 –10 A –0.4 –10 V 0.02 0.01 0 –2 –4 –6 –8 –10 Gate to Source Voltage VGS (V) 0.005 –2 Static Drain-Source on State Resistance vs. Temperature 0.08 0.06 100 Pulse test I D = –30 A 0.04 0 –40 50 20 VGS = –4 V –10 A, –20 A 0.02 –5 –10 –20 –50 –100 –200 Drain Current I D (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (s) Static Drain-Source on State Resistance RDS(on) ( Ω ) 0.1 4 VGS = –4 V 0.05 –10 V I D = –30 A –10 A, –20 A 0 40 80 120 160 Case Temperature TC (°C) Pulse Test VDS = –10 V Tc = 25°C –25°C 75°C 10 5 2 1 –0.5 –1 –2 –5 –10 –20 Drain Current I D (A) –50 2SJ280(L), 2SJ280(S) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain-Source Voltage 10000 Ciss C (pF) 200 100 Capacitance 50 di/dt = 50 A/ μ s, VGS = 0 Ta = 25°C 20 10 5 –1 –60 –80 –100 0 VDD = –10 V –25 V –50 V –4 VDS –8 VDD = –10 V –25 V –50 V I D = –30 A 40 80 120 160 Gate Charge Qg (nc) VGS = 0, f = 1 MHz –10 –20 –30 Drain to Source Voltage –40 –50 VDS (V) 1000 0 –12 VGS –16 –20 200 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) –40 100 Switching Characteristics Dynamic Input Characteristics –20 Crss 10 0 –2 –5 –10 –20 –50 –100 Reverse Drain Current I DR (A) 0 Coss 1000 td(off) Switching Time t (ns) Reverse Recovery Time t rr (ns) 500 500 tf 200 100 tr 50 td(on) 20 10 –0.5 –1 VGS = –10 V, VDD =: –30 V PW = 2 μs, duty < = 1% –2 –5 –10 –20 Drain Current I D (A) –50 5 2SJ280(L), 2SJ280(S) Maxmum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current vs. Source to Drain Voltage 100 (mJ) AR Pulse Test –40 VGS = –10 V –30 –20 –5 V 0, 5V –10 0 0 I AP = –30 A VDD = –25 V duty < 0.1% Rg > =50 Ω 80 Repetive Avaranche Energy E Reverse Drain Current I DR (A) –50 60 40 20 0 25 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage VSD (V) 50 75 100 125 Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform E AR = VDS Monitor Rg L I AP Monitor D.U.T VDSS 1 •L•I 2• AP 2 VDSS – V DD V(BR)DSS I AP VDD ID Vin –15 V 50 Ω 0 6 VDD VDS 150 Normalized Transient Thermal Impedance γS (t) 2SJ280(L), 2SJ280(S) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θch–c (t) = γS (t) · θch–c θch–c = 1.67°C/W, TC = 25°C PDM 0.02 0.03 1 se 0.0 t Pul o h 0.01 10 μ T 1S 100 μ 1m 10 m Pulse Width PW (s) 100 m D = PW T PW 1 10 Waveforms Switching Time Test Circuit Vin 10% Vin Monitor Vout Monitor 90% D.U.T 50 Ω Vin –10 V VDD . =. 30 V 90% 90% RL Vout td (on) 10% 10% tr td (off) tf 7 2SJ280(L), 2SJ280(S) 外 RENESAS Code PRSS0004AE-A Previous Code LDPAK(L) / LDPAK(L)V 法 MASS[Typ.] 1.40g 1.3 ± 0.2 1.37 ± 0.2 2.54 ± 0.5 MASS[Typ.] 1.30g (1.5) (1.4) 4.44 ± 0.2 1.3 ± 0.15 0.3 10.0 +– 0.5 8.6 ± 0.3 (1.5) 10.2 ± 0.3 Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 ± 0.1 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 2.54 ± 0.5 8 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Unit: mm 7.8 6.6 1.7 2.54 ± 0.5 RENESAS Code PRSS0004AE-B 2.49 ± 0.2 11.0 ± 0.5 0.76 ± 0.1 JEITA Package Code SC-83 Unit: mm 4.44 ± 0.2 1.3 ± 0.15 0.2 0.86 +– 0.1 Package Name LDPAK(S)-(1) 図 10.2 ± 0.3 8.6 ± 0.3 11.3 ± 0.5 0.3 10.0 +– 0.5 寸 7.8 7.0 JEITA Package Code - (1.4) Package Name LDPAK(L) 形 2.2 ࡈὀព᭩ࡁ 1. ᮏ㈨ᩱグ㍕ࡉࢀࡓᅇ㊰ࠊࢯࣇࢺ࢙࢘࠾ࡼࡧࡇࢀࡽ㛵㐃ࡍࡿሗࡣࠊ༙ᑟయ〇ရࡢືసࠊᛂ⏝ࢆㄝ᫂ࡍࡿࡶࡢ࡛ࡍࠋ࠾ᐈᵝࡢᶵჾ࣭ࢩࢫࢸ࣒ࡢタィ࠾࠸ ࡚ࠊᅇ㊰ࠊࢯࣇࢺ࢙࢘࠾ࡼࡧࡇࢀࡽ㛵㐃ࡍࡿሗࢆ⏝ࡍࡿሙྜࡣࠊ࠾ᐈᵝࡢ㈐௵࠾࠸࡚⾜ࡗ࡚ࡃࡔࡉ࠸ࠋࡇࢀࡽࡢ⏝㉳ᅉࡋ࡚ࠊ࠾ᐈᵝࡲࡓࡣ➨୕ ⪅⏕ࡌࡓᦆᐖ㛵ࡋࠊᙜ♫ࡣࠊ୍ษࡑࡢ㈐௵ࢆ㈇࠸ࡲࡏࢇࠋ 2. ᮏ㈨ᩱグ㍕ࡉࢀ࡚࠸ࡿሗࡣࠊṇ☜ࢆᮇࡍࡓࡵៅ㔜సᡂࡋࡓࡶࡢ࡛ࡍࡀࠊㄗࡾࡀ࡞࠸ࡇࢆಖドࡍࡿࡶࡢ࡛ࡣ࠶ࡾࡲࡏࢇࠋ୍ࠊᮏ㈨ᩱグ㍕ࡉࢀ࡚࠸ࡿሗ ࡢㄗࡾ㉳ᅉࡍࡿᦆᐖࡀ࠾ᐈᵝ⏕ࡌࡓሙྜ࠾࠸࡚ࡶࠊᙜ♫ࡣࠊ୍ษࡑࡢ㈐௵ࢆ㈇࠸ࡲࡏࢇࠋ 3. ᮏ㈨ᩱグ㍕ࡉࢀࡓ〇ရࢹ㸫ࢱࠊᅗࠊ⾲ࠊࣉࣟࢢ࣒ࣛࠊࣝࢦࣜࢬ࣒ࠊᛂ⏝ᅇ㊰➼ࡢሗࡢ⏝㉳ᅉࡋ࡚Ⓨ⏕ࡋࡓ➨୕⪅ࡢ≉チᶒࠊⴭసᶒࡑࡢࡢ▱ⓗ㈈⏘ᶒ ᑐࡍࡿᐖ㛵ࡋࠊᙜ♫ࡣࠊఱࡽࡢ㈐௵ࢆ㈇࠺ࡶࡢ࡛ࡣ࠶ࡾࡲࡏࢇࠋᙜ♫ࡣࠊᮏ㈨ᩱᇶ࡙ࡁᙜ♫ࡲࡓࡣ➨୕⪅ࡢ≉チᶒࠊⴭసᶒࡑࡢࡢ▱ⓗ㈈⏘ᶒࢆఱࡽチ ㅙࡍࡿࡶࡢ࡛ࡣ࠶ࡾࡲࡏࢇࠋ 4. ᙜ♫〇ရࢆᨵ㐀ࠊᨵኚࠊ」〇➼ࡋ࡞࠸࡛ࡃࡔࡉ࠸ࠋࡿᨵ㐀ࠊᨵኚࠊ」〇➼ࡼࡾ⏕ࡌࡓᦆᐖ㛵ࡋࠊᙜ♫ࡣࠊ୍ษࡑࡢ㈐௵ࢆ㈇࠸ࡲࡏࢇࠋ 5. ᙜ♫ࡣࠊᙜ♫〇ရࡢရ㉁Ỉ‽ࢆࠕᶆ‽Ỉ‽ࠖ࠾ࡼࡧࠕ㧗ရ㉁Ỉ‽ࠖศ㢮ࡋ࡚࠾ࡾࠊ ྛရ㉁Ỉ‽ࡣࠊ௨ୗ♧ࡍ⏝㏵〇ရࡀ⏝ࡉࢀࡿࡇࢆពᅗࡋ࡚࠾ࡾࡲࡍࠋ ᶆ‽Ỉ‽㸸 ࢥࣥࣆ࣮ࣗࢱࠊOAᶵჾࠊ㏻ಙᶵჾࠊィ ᶵჾࠊAVᶵჾࠊ ᐙ㟁ࠊᕤసᶵᲔࠊࣃ࣮ࢯࢼࣝᶵჾࠊ⏘ᴗ⏝ࣟ࣎ࢵࢺ➼ 㧗ရ㉁Ỉ‽㸸 ㍺㏦ᶵჾ㸦⮬ື㌴ࠊ㟁㌴ࠊ⯪⯧➼㸧ࠊ㏻⏝ಙྕᶵჾࠊ 㜵⅏࣭㜵≢⨨ࠊྛ✀Ᏻ⨨➼ ᙜ♫〇ရࡣࠊ┤᥋⏕࣭㌟య༴ᐖࢆཬࡰࡍྍ⬟ᛶࡢ࠶ࡿᶵჾ࣭ࢩࢫࢸ࣒㸦⏕⥔ᣢ⨨ࠊேయᇙࡵ㎸ࡳ⏝ࡍࡿࡶࡢ➼㸧 ࠊࡶࡋࡃࡣከ࡞≀ⓗᦆᐖࢆⓎ⏕ࡉ ࡏࡿ࠾ࡑࢀࡢ࠶ࡿᶵჾ࣭ࢩࢫࢸ࣒㸦ཎᏊຊไᚚࢩࢫࢸ࣒ࠊ㌷ᶵჾ➼㸧⏝ࡉࢀࡿࡇࢆពᅗࡋ࡚࠾ࡽࡎࠊ⏝ࡍࡿࡇࡣ࡛ࡁࡲࡏࢇࠋ ࡓ࠼ࠊពᅗࡋ࡞࠸⏝ ㏵ᙜ♫〇ရࢆ⏝ࡋࡓࡇࡼࡾ࠾ᐈᵝࡲࡓࡣ➨୕⪅ᦆᐖࡀ⏕ࡌ࡚ࡶࠊᙜ♫ࡣ୍ษࡑࡢ㈐௵ࢆ㈇࠸ࡲࡏࢇࠋ ࡞࠾ࠊࡈ᫂Ⅼࡀ࠶ࡿሙྜࡣࠊᙜ♫Ⴀᴗ࠾ၥ࠸ ྜࢃࡏࡃࡔࡉ࠸ࠋ 6. ᙜ♫〇ရࢆࡈ⏝ࡢ㝿ࡣࠊᙜ♫ࡀᣦᐃࡍࡿ᭱ᐃ᱁ࠊືస㟁※㟁ᅽ⠊ᅖࠊᨺ⇕≉ᛶࠊᐇ᮲௳ࡑࡢࡢಖド⠊ᅖෆ࡛ࡈ⏝ࡃࡔࡉ࠸ࠋᙜ♫ಖド⠊ᅖࢆ㉸࠼࡚ᙜ♫〇 ရࢆࡈ⏝ࡉࢀࡓሙྜࡢᨾ㞀࠾ࡼࡧᨾࡘࡁࡲࡋ࡚ࡣࠊᙜ♫ࡣࠊ୍ษࡑࡢ㈐௵ࢆ㈇࠸ࡲࡏࢇࠋ 7. ᙜ♫ࡣࠊᙜ♫〇ရࡢရ㉁࠾ࡼࡧಙ㢗ᛶࡢྥୖດࡵ࡚࠸ࡲࡍࡀࠊ༙ᑟయ〇ရࡣ࠶ࡿ☜⋡࡛ᨾ㞀ࡀⓎ⏕ࡋࡓࡾࠊ⏝᮲௳ࡼࡗ࡚ࡣㄗືసࡋࡓࡾࡍࡿሙྜࡀ࠶ࡾࡲ ࡍࠋࡲࡓࠊᙜ♫〇ရࡣ⪏ᨺᑕ⥺タィࡘ࠸࡚ࡣ⾜ࡗ࡚࠾ࡾࡲࡏࢇࠋᙜ♫〇ရࡢᨾ㞀ࡲࡓࡣㄗືసࡀ⏕ࡌࡓሙྜࡶࠊே㌟ᨾࠊⅆ⅏ᨾࠊ♫ⓗᦆᐖ➼ࢆ⏕ࡌࡉࡏ ࡞࠸ࡼ࠺ࠊ࠾ᐈᵝࡢ㈐௵࠾࠸࡚ࠊ㛗タィࠊᘏ↝ᑐ⟇タィࠊㄗືస㜵Ṇタィ➼ࡢᏳタィ࠾ࡼࡧ࢚࣮ࢪࣥࢢฎ⌮➼ࠊ࠾ᐈᵝࡢᶵჾ࣭ࢩࢫࢸ࣒ࡋ࡚ࡢฟⲴಖド ࢆ⾜ࡗ࡚ࡃࡔࡉ࠸ࠋ≉ࠊ࣐ࢥࣥࢯࣇࢺ࢙࢘ࡣࠊ༢⊂࡛ࡢ᳨ドࡣᅔ㞴࡞ࡓࡵࠊ࠾ᐈᵝࡢᶵჾ࣭ࢩࢫࢸ࣒ࡋ࡚ࡢᏳ᳨ドࢆ࠾ᐈᵝࡢ㈐௵࡛⾜ࡗ࡚ࡃࡔࡉ࠸ࠋ 8. ᙜ♫〇ရࡢ⎔ቃ㐺ྜᛶ➼ࡢヲ⣽ࡘࡁࡲࡋ࡚ࡣࠊ〇ရಶูᚲࡎᙜ♫Ⴀᴗ❆ཱྀࡲ࡛࠾ၥྜࡏࡃࡔࡉ࠸ࠋࡈ⏝㝿ࡋ࡚ࡣࠊ≉ᐃࡢ≀㉁ࡢྵ᭷࣭⏝ࢆつไࡍࡿ RoHSᣦ௧➼ࠊ㐺⏝ࡉࢀࡿ⎔ቃ㛵㐃ἲ௧ࢆ༑ศㄪᰝࡢ࠺࠼ࠊࡿἲ௧㐺ྜࡍࡿࡼ࠺ࡈ⏝ࡃࡔࡉ࠸ࠋ࠾ᐈᵝࡀࡿἲ௧ࢆ㑂Ᏺࡋ࡞࠸ࡇࡼࡾ⏕ࡌࡓᦆᐖ 㛵ࡋ࡚ࠊᙜ♫ࡣࠊ୍ษࡑࡢ㈐௵ࢆ㈇࠸ࡲࡏࢇࠋ 9. ᮏ㈨ᩱグ㍕ࡉࢀ࡚࠸ࡿᙜ♫〇ရ࠾ࡼࡧᢏ⾡ࢆᅜෆእࡢἲ௧࠾ࡼࡧつ๎ࡼࡾ〇㐀࣭⏝࣭㈍ࢆ⚗Ṇࡉࢀ࡚࠸ࡿᶵჾ࣭ࢩࢫࢸ࣒⏝ࡍࡿࡇࡣ࡛ࡁࡲࡏࢇࠋࡲ ࡓࠊᙜ♫〇ရ࠾ࡼࡧᢏ⾡ࢆ㔞◚ቯරჾࡢ㛤Ⓨ➼ࡢ┠ⓗࠊ㌷⏝ࡢ┠ⓗࡑࡢ㌷⏝㏵⏝ࡋ࡞࠸࡛ࡃࡔࡉ࠸ࠋᙜ♫〇ရࡲࡓࡣᢏ⾡ࢆ㍺ฟࡍࡿሙྜࡣࠊࠕእ ᅜⅭ᭰ཬࡧእᅜ㈠᫆ἲࠖࡑࡢ㍺ฟ㛵㐃ἲ௧ࢆ㑂Ᏺࡋࠊࡿἲ௧ࡢᐃࡵࡿࡇࢁࡼࡾᚲせ࡞ᡭ⥆ࢆ⾜ࡗ࡚ࡃࡔࡉ࠸ࠋ 10. ࠾ᐈᵝࡢ㌿➼ࡼࡾࠊᮏࡈὀព᭩ࡁグ㍕ࡢㅖ᮲௳ゐࡋ࡚ᙜ♫〇ရࡀ⏝ࡉࢀࠊࡑࡢ⏝ࡽᦆᐖࡀ⏕ࡌࡓሙྜࠊᙜ♫ࡣఱࡽࡢ㈐௵ࡶ㈇ࢃࡎࠊ࠾ᐈᵝ࡚ࡈ㈇ ᢸࡋ࡚㡬ࡁࡲࡍࡢ࡛ࡈᢎࡃࡔࡉ࠸ࠋ 11. ᮏ㈨ᩱࡢ㒊ࡲࡓࡣ୍㒊ࢆᙜ♫ࡢᩥ᭩ࡼࡿ๓ࡢᢎㅙࢆᚓࡿࡇ࡞ࡃ㌿㍕ࡲࡓࡣ」〇ࡍࡿࡇࢆ⚗ࡌࡲࡍࠋ ὀ1. ᮏ㈨ᩱ࠾࠸࡚⏝ࡉࢀ࡚࠸ࡿࠕᙜ♫ࠖࡣࠊࣝࢿࢧࢫ ࢚ࣞࢡࢺࣟࢽࢡࢫᰴᘧ♫࠾ࡼࡧࣝࢿࢧࢫ ࢚ࣞࢡࢺࣟࢽࢡࢫᰴᘧ♫ࡀࡑࡢ⥲ᰴࡢ㆟Ỵᶒࡢ㐣༙ᩘ ࢆ┤᥋ࡲࡓࡣ㛫᥋ಖ᭷ࡍࡿ♫ࢆ࠸࠸ࡲࡍࠋ ὀ2. ᮏ㈨ᩱ࠾࠸࡚⏝ࡉࢀ࡚࠸ࡿࠕᙜ♫〇ရࠖࡣࠊὀ㸯࠾࠸࡚ᐃ⩏ࡉࢀࡓᙜ♫ࡢ㛤Ⓨࠊ〇㐀〇ရࢆ࠸࠸ࡲࡍࠋ http://www.renesas.com ڦႠᴗ࠾ၥྜࡏ❆ཱྀ ͤႠᴗ࠾ၥྜࡏ❆ཱྀࡢఫᡤࡣኚ᭦࡞ࡿࡇࡀ࠶ࡾࡲࡍࠋ᭱᪂ሗࡘࡁࡲࡋ࡚ࡣࠊᘢ♫࣮࣒࣮࣍࣌ࢪࢆࡈぴࡃࡔࡉ࠸ࠋ ࣝࢿࢧࢫ ࢚ࣞࢡࢺࣟࢽࢡࢫᰴᘧ♫ࠉࠛ100-0004ࠉ༓௦⏣༊ᡭ⏫2-6-2㸦᪥ᮏࣅࣝ㸧 ڦᢏ⾡ⓗ࡞࠾ၥྜࡏ࠾ࡼࡧ㈨ᩱࡢࡈㄳồࡣୗグ࠺ࡒࠋ ࠉ⥲ྜ࠾ၥྜࡏ❆ཱྀ㸸http://japan.renesas.com/contact/ © 2014 Renesas Electronics Corporation. All rights reserved. Colophon 3.0
© Copyright 2024 ExpyDoc
