Si(111)上HfO /GaSb MOSキヤパシタの作製

Si(111)ୖHfO2/GaSb MOS䜻䝱䝟䝅䝍䛾స〇
Keyword : CMOS䚸III-V᪘໬ྜ≀༙ᑟయ䚸High-k⤯⦕⭷
⊂❧⾜ᨻἲே㻌 ≀㉁䞉ᮦᩱ◊✲ᶵᵓ
ᄂᆮỉ
Ꮡ୎
ḟୡ௦CMOS䜈䛾㧗⛣ືᗘ䝏䝱䝛䝹ᮦᩱ䛸䛧䛶III-V᪘໬ྜ≀༙ᑟయ䛾ᑟධ䛜᳨ウ䛥䜜䛶
䛚䜚䚸n䝏䝱䝛䝹䛸䛧䛶InGaAs䛜䚸p䝏䝱䝛䝹䛸䛧䛶GaSb䛜ὀ┠䛥䜜䛴䛴䛒䜚䜎䛩䚹
ᄂᆮỉ
ཀྵẟ
III-V᪘໬ྜ≀༙ᑟయ䜢Siᇶᯈୖ䛻㞟✚䛥䛫䜛䛯䜑䛻䛿䚸Siᇶᯈୖ䛻ⷧ䛟䛶Ⰻ㉁䛺III-V⤖ᬗ
ᒙ䜢ᙧᡂ䛩䜛ᚲせ䛜䛒䜚䜎䛩䛜䚸Si䛸III-V᪘༙ᑟయ䛷䛿᱁Ꮚᐃᩘ䛜኱䛝䛟␗䛺䜛䛯䜑䚸䛭䜜
䛻㉳ᅉ䛧䛯⤖ᬗᛶຎ໬䜢ᢚไ䛩䜛ᚲせ䛜䛒䜚䜎䛩䚹
இέᇢᄂᆮἚἦἕἁἋ
¾ 䛒䜙䛛䛨䜑In䛷⤊➃䛧䛯Si(111)⾲㠃ୖ䛻ᩘཎᏊᒙ䛾
InAsᒙ䜢஧ḟඖᡂ㛗䛥䛫䜛䚹
¾ InAs/Si(111)ୖ䛻䛚䛔䛶㧗ရ㉁䛺GaSb⭷䛾஧ḟඖ
ᡂ㛗䛻ᡂຌ䚹
¾ InAs/Si(111)ୖ䛻HfO2/GaSb MOS䜻䝱䝟䝅䝍䜢స〇䛧䛯䚹
¾ స〇䛧䛯MOS䜻䝱䝟䝅䝍䛿GaSb(001)䜔GaSb(111)Aᇶᯈୖ
䛻స〇䛧䛯MOS䜻䝱䝟䝅䝍䛸ྠ➼䛾⏺㠃≉ᛶ䜢♧䛩䚹
૨ᴾ ྂᴾ
㻌 㻌A. Ohtake et al., Appl. Phys. Lett. 104, 032101 (2014)
㻌 N. Miyata et al., Appl. Phys. Lett. 104, 232104 (2014)
㻌
LJƱNJ
ܱဇ҄ƷႸ೅
z㻌 Si(111)ୖ䛻ᴟⷧInAsᒙ䜢ᡂ㛗䛥䛫䜛䛣䛸䛻䜘䜚䚸㧗
ရ㉁䛾GaSbⷧ⭷䛾ᡂ㛗䛻ᡂຌ䛧䛯
z㻌 n䝏䝱䝛䝹(InGaAs)䛚䜘䜃p䝏䝱䝛䝹(GaSb)䛾཮
᪉䛻໬ྜ≀༙ᑟయ䜢⏝䛔䛯CMOS䝕䝞䜲䝇䛾ᐇ⌧
z㻌 GaSb/Si(111)ୖ䛻HfO2 MOS䜻䝱䝟䝅䝍䜢స〇䛧䛯 z㻌 ᮏᡭἲ䛿GaSb/InAs/InP⣔䛻䜒㐺⏝ྍ⬟䛷䛒䜚䚸
䛣䛾ᵓ㐀䜢⏝䛔䛯㉥እ᳨ฟ䝕䝞䜲䝇䜈䛾ᛂ⏝䜒ᮇ
z㻌 స〇䛧䛯MOS䜻䝱䝟䝅䝍䛿GaSbᇶᯈୖ䛾ሙྜ䛸ྠ
ᚅ䛷䛝䜛
➼䛾⏺㠃≉ᛶ䜢♧䛩 㻌
ඛ➃䝣䜷䝖䝙䜽䝇ᮦᩱ䝴䝙䝑䝖㻌 㔞Ꮚ䝘䝜ᵓ㐀䜾䝹䞊䝥㻌 ኱➉㻌 ᫭ᾈ
E-mail : OHTAKE.Akihiro䖃nims.go.jp
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