商品ラインアップを拡大 Expand Product Lineup SiC-MOSFETs 650V Series, 1200V Series 第２世代 SiC-MOSFET 2nd Generation SiC-MOSFETs Features Characteristics ●高速スイッチング ton=70nsec (typ.) toff=98nsec (typ.) ●低オン抵抗（温度変化小） 100 Low ON-resistance (Small temperature dependency) Loss (W) Low body diode Qrr and trr [Si-IGBTと比較, 30kHz 駆動時] ●高温環境で駆動 SCT2080KE SCH2080KE SCT2160KE SCT2280KE SCT2450KE SCT2120AF SCTMU001F S2307 S2301 S2306 S2308 S2305 S2302 S2206 Turn-OFF switching loss スイッチング時の 損失を IGBT比73%低減 導通損失 Compared to IGBTs loss reduced by 73% オフ損失 20 Conduction loss Compared to IGBTs Loss Reduced by 73% SiC-MOSFET Si-IGBT ∗ton=td (on) +tr, toff=td (off) +tf Circuit Diagram Lineup Part No. IGBT比73% ロスを削減 60 0 Tj (Max) =175˚C Supports high temperature operation オン損失 Turn-ON switching loss オフ損失 Turn-OFF switching loss 導通損失 Conduction loss Turn-ON switching loss 40 Significantly reduced power loss by 73% (Compared to Si-IGBTs, when operating at 30kHz) （30kHz駆動時 when operating at 30 kHz） オン損失 80 ●寄生ダイオードの逆回復動作が極めて小さい ●電力損失を大幅削減、 スイッチング損失73%減 Comparison of Loss 120 High-speed switching VDSS (V) RDS (on) (mΩ) 1200 1200 1200 1200 1200 650 400 1200 1200 1200 1200 1200 1200 650 80 80 160 280 450 120 120 45 80 160 280 450 1200 120 ID Max. (A) 40 40 22 14 10 29 30 68∗ 40∗ 22∗ 14∗ 10∗ 3.5∗ 29∗ Package Co-Packed Diode − Yes − − − − − − − − − − − − TO-247 [3pin] TO-220AB [3pin] Bare Chip SCH2080KE SCT2080KE Drain Drain 世界初SBD 同梱タイプ SBD SBD Co-packed Gate パッケージ内にSiC-SBDが 内蔵されています。 Gate SiC-SBD is integrated into the package Source Source ∗Limited by Tj=175˚C 第３世代 SiCトレンチMOSFET 3rd Generation SiC Trench MOSFETs Features Structural Diagram ●低オン抵抗によりインバータのパワー密度向上を実現 Low ON resistance improves inverter power density Metal SiO2 ●高速スイッチングが可能 N+ High-speed switching P+ ●寄生ダイオードの逆回復動作が極めて小さい P Source trench Minimal reverse recovery behavior of the parasitic diode Poly-Si Gate trench SiC n- Drift layer ●寄生ダイオード通電による素子劣化を解消 SiC sub Metal Eliminates degradation caused by parasitic diode conduction SiC Trench MOSFET ●Qg、寄生容量が小さい Small Qg and parasitic capacitance Characteristics Trade-off curve between Rdson and Ciss Lineup 5000 4500 RDS (on) (mΩ) 1200 22 1200 30 1200 40 650 17 650 22 650 30 4000 Package 3500 Ciss (pF) VDSS (V) TO-247-3L Bare chip 2G DMOS SCT2080KE 80mΩ 1200V 3000 2500 at same chip area Ciss 35%↓ Ron 50%↓ 2000 1500 at same Ron, Ciss 70%↓ 1000 Trench MOS 1200V 40mΩ 500 Trench MOS 1200V 80mΩ 0 0 20 40 60 80 100 RDS (on) @25˚C (mΩ) 120 140 160
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