スライド 1

Temperature dependence of
chemical potential in Bi2212
Experiment
試料
Bi2Sr2-xLaxCaCu2O8+d
= 0.02, 0.03, 0.05, 0.06,
Bi2Sr2Y0.2Ca0.8Cu2O8+d
= 0.08, 0.15
(Tc~30 K, 85 K)
測定
・XPS
励起光 Mg Ka線(1253.6 eV)
分解能 0.7 eV
T = 8.5 K, 100 K, 200 K, 300 K
・ARPES
励起光 19 eV
分解能 14 meV
T= 10 K, 100K, 200K, 300K
Temperature Dependence of Core-level Spectra (=0.02)
Temperature Dependence of Core-level Spectra (=0.03)
Temperature Dependence of Core-level Spectra (=0.05)
Temperature Dependence of Core-level Spectra (=0.06)
Temperature Dependence of Core-level Spectra (=0.08)
Temperature Dependence of Core-level Spectra (=0.15)
Temperature Dependence of Energy Position I
(Relative to energy at 8.5 K)
ホールのドープとともに温度変化によるシフト量が抑制
Temperature Dependence of Energy Position II
Temperature Dependence of Energy Position III
(Relative to energy at =0.06)
非超伝導相ではすべての元素が同じ方向にシフトし
超伝導相でSr以外は逆にシフト
Comparison with Theoretical Works
Sr_8.5K (Experiment)
Sr_100K
Sr_200K
Sr_300K
T = 200 K (t-J model)
T = 400 K
T = 600 K
T = 800 K
T = 1000 K
Chemical Potential Shift (eV)
0.4
0.2
J. Jaklic and P. Prelovsek,
PRL. 77, 892 (1996)
0.0
-0.2
0.00
0.05
0.10
0.15
0.20
Hole concentration 
0.25
0.30
Temperature dependence of valence band spectra I
=0.03
Core-levelと同程度のシフト
Temperature dependence of valence band spectra II
=0.08
=0.03に比べてわずかな変化
Hysteresis (Doping Dependence)
(Low→High→Low Temperature)