日本におけるXAFSの25年とPF 高エネ機構・物構研 野村

XAFS beam lines in Japan
KEK・PF
NOMURA Masaharu
1. Overview of XAFS activity
2. Progress of XAFS beam line technology at PF
3. Progress of XAFS beam line technology at SPring-8
4. Key points for designing XAFS beam lines
1982
1983
1984
1985
1986
1987
1988
1989
1990
1991
1992
1993
1994
1995
1996
1997
1998
1999
2000
2001
2002
2003
2004
20
1983
1984
1985
1986
1987
1988
1989
1990
1991
1992
1993
1994
1995
1996
1997
1998
1999
2000
2001
2002
2003
2004
Number of XAFS proposals
申請課題数
採択課題数
proposals
80
60
40
approved
proposals
0
Number of publications
XAFS activities at Photon Factory
Proposals
publications
120
90
valid for 2 years
80
100
70
60
10B
7C
6B
12C
9A
50
40
30
20
10
0
FY
year
XAFS activities at SPring-8
60
120
申請
採択
100
BL01B1
Valid for a half year
50
publications
40
60
30
2004A
2003B
2003A
2002B
2002A
2001B
2001A
0
2000B
0
2000A
10
1999B
20
1998B
20
1998A
40
1997B
課題数
80
1998
1999
2000
2001
year
2002
2003
2004
XAFS activities
• XAFS as a daily tool
- transmission, fluorescence, CEY
• surface XAFS, total reflection XAFS
• fluorescent XAFS with MSSD
towards ultra dilute systems
• utilization of soft X-ray
• micro XAFS
• With polarization control - MCD, NCD…
• time-resolved XAFS - quick, dispersive…
• site-resolved XAFS, state resolved XAFS
Photon Factory
BL-10B
The first XAFS beam line in
Japan
Since: 1982 Age :
bending source
22
BL-10B made XAFS as a daily tool.
Still producing many papers.
More than 950 publications
Photon Factory BL-12C
1011
Fixed focus position and shape
• Double crystal mono. +
bent cylindrical mirror (Rh
coat)
• Fluorescent XAFS with
MSSD
1010
flux @ 300mA
since: 1994 age: 10
bending source
publications: more than
160 publications
109
7C Si(111) w. foc.
12C Si(111)
12C Si(311)
108
0
5
10
15
E/keV
20
25
Photon Factory BL-9A
1012
13B 1*1
9A Si(111)
12C Si(111)
flux @ 300mA
• New optics using bent conical
mirrors.
high flux with high energy
resolution
• Control higher orders by using
parallely aligned mirrors
<10-6 , E>4keV)
extension to SX
1011
1010
0
5
10
E/keV
弯曲円錐台鏡
二結晶分光器
bending source
弯曲円錐台鏡
15
20
SPring-8 BL01B1
col. mirror
Since 1997
wide energy range: 4~
117keV
high energy resolution
109~1011ph/s
DXM
foc. mirror
easy to change lattice plane
fully automatic beam line alignment
wide experimental hutch
various sample environment - furnace,
cryostat
various detection modes - Lytle
detector, MSSD, CEY
Wide energy range of BL01B1

Ca K-edge (4.0 keV)~Pb K-edge (82 keV)
S/N ratio of measurement system ~ 3*104
30
20
10
0
k3(k)

-10
-20
-30
-40
0
5
10
15
20
25
30
k (A-1)

La K-edge (38.9 keV) XAFS at 10 K
Sample: LaAlO3 pellet
By Uruga et al.
Fully automatic beam line alignment system



Switch of diffraction plane
Change of glancing angle of mirrors
Precise adjustment




Bent radius of mirrors
Diffraction condition
Fixed-exit beam condition
Height

⇒
⇒
⇒
⇒
Table
Rocking scan
Slit scan
Table, Scan
Elevation stages, 2nd Mirror, Slits, Experimental base
Measurement
system
SR light
SPring-8 BL37XU
Downstream shutter (A branch)
Standard double crystal
Horizontal-deflected mirrors (A branch)
monochromator (A branch)
Downstream shutter (B branch)
Single-bounce highenergy monochromator
(B branch)
B branch for high-energy X-rays
A branch with standard optics
Undulator source
Microbeam experiments
~1010ph/s in 1mm2 with
KB mirrors
120
120
As
100
80
80
60
60
40
40
20
20
0
0
0
40
80
0
120
80
80
60
60
40
40
20
20
0
0
40
80
0
120
80
Cu
40
80
120
80
60
micron
60
micron
1.0
120
Ga
100
0
40
20
0
0
20
40
60
micron
80
60
20
40
60
micron
80
80
micron
20
40
20
0
0
0
20
40
60
micron
80
0.4
0.2
11.86
11.87
X-ray energy / keV
11.88
毛髪中のAs K-XANESスペクトル
60
40
0.6
11.85
0
S
80
0.8
As2O3
職業性
急性
40
20
0
micron
80
Normarized intensity / a.u.
Zn
100
Zn
40
120
120
As
Cu
100
0
20
40
60
micron
80
ヒ素の暴露経路による分布の違い(上段:職業性、下段:急性)
(BL39XU, 3mm/pixel)
11.89
Beam line with
focusing system
↓
Fluorescent XAFS
with Lytle detector
10mmol dm-3 Cu aq.
trans.
fluo.
Multi-element SSD
•S/N = S/(S+B)1/2, S/B~1/200
•Separation of fluorescent signal and
scattering is the key. Thus require high
energy resolution and high throughput
Not easy to optimize the condition
Not low maintenance load
Very expensive
Dead time correction is required
4×10-4 Au in AgX
Lytle detector
MSSD
Au5908
8
Au5a38
0.7
(b)
(a)
0.6
7
0.5
6
mt
mt
0.4
5
0.3
4
0.2
3
2
11.5
0.1
12
12.5
E/keV
19素子SSD
13
0
11.5
ut(raw)
ut(cor)
12
E/keV
12.5
13
Key points to design XAFS beam lines
•
•
•
•
•
wide energy range (4(2.2) -- 23 keV or wider)
Fairly high energy resolution (~10-4)
simple beam line optics
fixed, fairly small focused beam
negligible higher order content (<10-4)
mirror (lower E), detune (higher E)
• various detection modes
transmission, fluorescent detection, CEY
• wide space for sample attachments
cryocooler, furnace etc.
• Nearby chemistry lab., exhaust handling
軟X線領域での実験
従来はUHV中で電子収量法
最近ではHe雰囲気中で
転換電子収量法
蛍光法 も可能に
ガソリンエンジン油中の添加剤
粘着テープ中のイオウ、塩素
石炭中のイオウ
Li電池電極中のイオウ
空気中のアルゴン
MoS2のXAFS
Total electron yield
Fluorescence & CEY
S1622
fluo
CEY
1.6
0.155
SK
1.4
Mo LⅡ
Mo LⅢ
1.2
0.15
0.8
0.145
0.6
0.4
at BL-11B
0.14
0.2
at BL-9A
0
0.135
2480
2520
2560
E/eV
2600
2640
CEY
fluo
1