Quality and Reliability Report
Third Quarter 2014
Document ID: 14Q3_QR_Report.doc
Note: All rights reserved. No part of this publication may be reproduced or transmitted without prior
approval by Silicon Labs. This document is the property of Silicon Labs and shall be returned upon request.
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Table of Contents
Quality and Reliability Report ............................................................................... 3
Overview .................................................................................................................. 3
Quality Assurance .................................................................................................. 4
Overview .................................................................................................................. 4
Figure 1 – Quality Monitor Flow ............................................................................... 4
Electrical and Visual / Mechanical Outgoing Quality Graphs ................................... 5
Part Numbers by Fab Technology ........................................................................ 6
Failure Rate Estimation ......................................................................................... 9
Failure Rate Calculation Method .............................................................................. 9
FIT Rate Curves and Data ..................................................................................... 10
0.11um OTP Reliability Summary ....................................................................... 44
0.13um OTP Reliability Summary ....................................................................... 45
0.18um Flash Reliability Summary ..................................................................... 46
0.18um OTP Reliability Summary ....................................................................... 47
0.25um HDR Flash Reliability Summary ............................................................ 48
0.35um Non-HE Flash Reliability Summary ....................................................... 49
0.35um HE Flash Reliability Summary ............................................................... 50
Reliability Monitor Program ................................................................................ 51
Overview ................................................................................................................ 51
Stress Descriptions .............................................................................................. 51
Reliability Tests, Procedures and Conditions Table ............................................... 51
Silicon Reliability Test Method and Conditions ................................................ 52
Reliability Monitor Report – Silicon Stresses .................................................... 53
Package Reliability Test Method and Conditions ............................................. 57
Reflow Profile and Moisture Sensitivity Level ................................................... 58
Overview ................................................................................................................ 58
Reflow Profile ......................................................................................................... 58
Moisture Sensitivity Level ....................................................................................... 58
Reliability Monitor Report – Package Stresses ................................................. 59
Revision History ................................................................................................... 65
All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs.
Pg. 2/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Quality and Reliability Report
Overview
Silicon Laboratories is pleased to share this Quality and Reliability Report with our customers and
other interested parties. It provides the latest quality performance data along with failure rate
estimates and reliability monitor data. These data are collected on a continual basis as
qualification, production and reliability monitors are completed. The report is published and
updated quarterly to provide customers visibility to the most recent information. The Quality
Trend charts on page 5 are shown on a rolling five year basis. All other reports include data from
the previous four quarters on a rolling, one year basis.
The report provides data covering:

Estimates of shipped product quality

Long-term operating life estimates

Mean time to failure

Data retention life estimates

Reliability monitor results
Silicon Laboratories is registered to the current versions of ISO 9001, ISO14001, and ISO/TS
16949 (automotive products only) and is committed to quality excellence. That commitment is
demonstrated by extensive product and process qualification. Each product undergoes extensive
qualification testing prior to production release. Silicon Laboratories qualifies integrated circuit
products using JEDEC JESD47, Stress-Test-Driven Qualification of Integrated Circuits or AECQ100, Stress Test Qualification for Integrated Circuits, as appropriate.
Once a product is qualified, on-going product quality and reliability is verified through monitoring
programs. Monitors are scheduled to periodically sample wafer fab technologies and package
technologies. The results are published in this report. Any failures are used to drive corrective
action and process and product improvement.
We hope you find this report useful. Please let us know if you have any specific questions or
suggestions.
All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs.
Pg. 3/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Quality Assurance
Overview
Two elements of product quality are reported – electrical quality and mechanical/visual quality.
We measure electrical quality by taking a sample (monitor) of production parts and retesting the
sample to the datasheet limits (see Figure 1). The sample electrical test may be performed at an
alternate test temperature to verify part performance across the datasheet temperature range.
This sample method identifies defects introduced at the test process step or that have escaped
the test process. Any failures drive corrective actions and product/process improvements.
Visual/Mechanical quality is estimated by sample inspection of the completed product prior to final
pack. Inspection items cover a broad range of characteristics and include mark, count, label,
cover tape workmanship, moisture barrier bag integrity, lead location, part placement, and many
other general workmanship items required for customer satisfaction and product protection during
shipment. Any failures drive corrective actions and process improvements.
Figure 1 – Quality Monitor Flow
Order Fulfillment
Assembly
Test
Electrical DPPM
Scan
FGI
Ship
Mechanical DPPM
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Pg. 4/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Electrical and Visual / Mechanical Outgoing Quality Graphs
14Q3 Sample size = 5,900,915
dppm = 1
14Q3 Sample size = 9,564,989
dppm = 0
All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs.
Pg. 5/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Part Numbers by Fab Technology
PN
5XX
BCXX
C8051F0XX
C8051F1XX
C8051F2XX
C8051F30X
C8051F31X
C8051F32X
C8051F33X
C8051F34X
C8051F35X
C8051F36X
C8051F37X
C8051F37X
C8051F38X
C8051F39X
C8051F4XX
C8051F5XX
C8051F7XX
C8051F8XX
C8051F9XX
C8051TXXX
CF0XX
CF1XX
CF2XX
CF30X
CF31X
CF32X
CF33X
CF34X
CF35X
CF36X
CF37X
CF38X
CF39X
CF4XX
CF5XX
CF7XX
CF8XX
CF9XX
CP2101
CP2102
CP2103
CP2104
CP2105
CP2108
CP2109
CP211X
CP2120
CP213X
CP22XX
CP240X
CP25XX
CP3XXX
CP4000
CTXXX
CY2277
CY2815
CY2831
CY2832
CY2834
CY28353
CY28354
CY2840
CY2841
Technology
0.13 um
0.11 um
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.18 um, embedded flash
0.35 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.25 um, embedded flash
0.25 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, OTP
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.25 um, embedded flash
0.25 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.35 um, embedded flash
0.18 um, OTP
0.18 um, OTP
0.18 um, embedded flash
0.18 um, OTP
0.18 um, OTP
0.35 um, embedded flash
0.18 um, OTP
0.35 um, embedded flash
0.18 um
0.35 um, embedded flash
0.18 um, OTP
0.13 um
0.18 um, OTP
0.6 um - 1.0 um
0.6 um - 1.0 um
0.45 um - 0.5 um
0.45 um - 0.5 um
0.315 um - 0.35 um
0.315 um - 0.35 um
0.25 um
0.25 um
0.25 um
PN
CY2841
CY2844
CY2854
CY2855
CY2880
CY28SR
CY2SST
CY505Y
CYI953
CYI983
CYW134
CYW150
CYW173
CYW256
CYW305
CYW311
CYW320
EM25X
EM26X
EM34X
EM35X
GGXXXFX
GXXFX
GXXXFX
IA10XX
IA11XX
IA12XX
IA13XX
IA14XX
IA21XX
IA32XX
IA35XX
IAP24X
IAP32X
IAP38X
IAP4XX
IAP5XX
IAP6XX
IAP7XX
IAP86X
IAP87X
IAP90X
IAP91X
IAP93X
LGXXXFX
S3UX
Si100X
Si100X
Si101X
Si101X
Si102X
Si102X
Si103X
Si106X
Si106X
Si108X
Si108X
Si1102
Si1102
Si1120
Si1120
Si114X
Si210X
Si2110
Si2113
Technology
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.315 um - 0.35 um
0.25 um
0.315 um - 0.35 um
0.315 um - 0.35 um
0.45 um - 0.5 um
0.45 um - 0.5 um
0.45 um - 0.5 um
0.45 um - 0.5 um
0.45 um - 0.5 um
0.45 um - 0.5 um
0.45 um - 0.5 um
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
Diode
0.6 um - 0.8 um BiCMOS
0.6 um - 0.8 um BiCMOS
0.6 um - 0.8 um BiCMOS
0.6 um - 0.8 um BiCMOS
0.6 um - 0.8 um BiCMOS
0.6 um - 0.8 um BiCMOS
0.315 um - 0.35 um
0.6 um - 0.8 um BiCMOS
0.6 um - 0.8 um BiCMOS
0.6 um - 1.0 um
0.6 um - 0.8 um BiCMOS
0.6 um - 0.8 um BiCMOS
0.6 um - 1.0 um
0.6 um - 1.0 um
0.6 um - 0.8 um BiCMOS
0.315 um - 0.35 um
0.6 um - 1.0 um
0.6 um - 0.8 um BiCMOS
0.6 um - 1.0 um
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, RF
0.18 um, embedded flash
0.18 um, RF
0.18 um, embedded flash
0.18 um, RF
0.18 um, embedded flash
0.11 um
0.18 um, embedded flash
0.11 um
0.18 um, embedded flash
0.6 um - 0.8 um BiCMOS
Diode
0.6 um - 0.8 um BiCMOS
Diode
0.18 um, OTP
0.13 um
0.13 um
0.11 um
PN
Si2113
Si2115
Si2128
Si2136
Si2137
Si2138
Si2140
Si2141
Si2143
Si2145
Si2146
Si2147
Si2148
Si2151
Si2153
Si2155
Si2156
Si2157
Si2158
Si2161
Si2162
Si2163
Si2164
Si2165
Si2166-AXX
Si2166-BXX
Si2167-AXX
Si2167-BXX
Si2168
Si2169
Si216XX
Si2170
Si2171
Si2172
Si2173
Si2176
Si2177
Si2178
Si2180
Si2181
Si2182
Si2185
Si2190
Si2191
Si2196
Si220X
Si221X
Si2400
Si2401
Si2403
Si2404
Si2404-C
Si2404-D
Si2417-D
Si2417-E
Si241X-A
Si241X-B
Si241X-C
Si241X-F
Si241X-G
Si241X-H
Si242X
Si2433
Si2434
Si2434-C
Technology
0.11 um
0.11 um
55 nm
0.11 um
55 nm
55 nm
0.11 um
55 nm
0.11 um
0.11 um
0.11 um
55 nm
55 nm
55 nm
0.11 um
0.11 um
0.11 um
55 nm
55 nm
0.11 um
55 nm
0.11 um
55 nm
0.11 um
0.11 um
55 nm
0.11 um
55 nm
55 nm
55 nm
55 nm
0.11 um
0.11 um
0.11 um
0.11 um
0.11 um
55 nm
55 nm
55 nm
55 nm
55 nm
0.11 um
55 nm
55 nm
0.11 um
0.315 um - 0.35 um
0.25 um
0.45 um - 0.5 um
0.18 um
0.18 um
0.18 um
0.18 um
0.11 um
0.18 um
0.11 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs.
Pg. 6/65
Silicon Laboratories
TITLE
PN
Si2434-C
Si2434-D
Si2435-B
Si2435-C
Si2435-D
Si2435-E
Si2435-F
Si2436
Si2437
Si2438
Si2439
Si2456
Si2457
Si2457-C
Si2457-D
Si2493
Si2493-C
Si2493-D
Si2494
Si27XX
Si3000
Si3005
Si3006
Si3007
Si3008
Si3009
Si3010
Si3011
Si3012
Si3014
Si3015
Si3016
Si3017
Si3018
Si3019
Si302X
Si3050-D
Si3050-E
Si3052
Si3054
Si3056
Si306X
Si307X
Si308X
Si31XX
Si320X
Si3210
Si3211
Si3215
Si3216
Si3217
Si3217X
Si3217X
Si3225
Si3226
Si3226X
Si3226X
Si3227
Si3230
Si3232
Si3233
Si3238
Si3239
Si324X
Si3291X
Quarterly Quality & Reliability Report
Technology
0.18 um
0.11 um
0.18 um
0.18 um
0.18 um
0.11 um
0.11 um
0.18 um
0.18 um
0.18 um
0.11 um
0.18 um
0.18 um
0.18 um
0.11 um
0.18 um
0.18 um
0.11 um
0.11 um
0.11 um
0.45 um - 0.5 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.45 um - 0.5 um
0.45 um - 0.5 um
0.45 um - 0.5 um
0.45 um - 0.5 um
0.25 um
0.25 um
0.25 um
0.45 um - 0.5 um
0.25 um
0.18 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
High Voltage
0.45 um - 0.5 um
0.45 um - 0.5 um
0.45 um - 0.5 um
0.45 um - 0.5 um
0.18 um
0.18 um
High Voltage
0.45 um - 0.5 um
0.18 um
0.18 um
High Voltage
0.18 um
0.45 um - 0.5 um
0.45 um - 0.5 um
0.45 um - 0.5 um
High Voltage
High Voltage
0.18 um
0.25 um
PN
Si3291X
Si340X
Si3450
Si3452
Si3452
Si3453
Si3453
Si3455
Si3456
Si3456
Si3457
Si3457
Si3458
Si3458
Si3459
Si3459
Si346X
Si348X
Si35XX
Si401X
Si402X
Si403X
Si406X
Si41XX
Si4310
Si4311
Si4312
Si4313
Si432X
Si433X
Si435X
Si436X
Si442X
Si4430
Si4431
Si4432
Si4438
Si445X
Si446X
Si46XX
Si4708
Si4709
Si470X-AXX
Si470X-C19
Si471X-AXX
Si472X-AXX
Si4730-AXX
Si4731-AXX
Si4732-AXX
Si474X
Si475X
Si476X
Si477X
Si4780
Si47XX-B1X
Si47XX-B2X
Si47XX-B3X
Si47XX-C3X
Si47XX-C4X
Si47XX-D
Si482X
Si4830
Si4834
Si4836
Si483X-B
Doc ID
Technology
0.25 um
High Voltage
0.18 um
0.18 um, OTP
High Voltage
0.18 um, OTP
High Voltage
High Voltage
0.35 um, embedded flash
High Voltage
0.18 um, OTP
High Voltage
0.18 um, OTP
High Voltage
0.18 um, OTP
High Voltage
0.18 um, OTP
0.35 um, embedded flash
High Voltage
0.13 um
0.6 um - 0.8 um BiCMOS
0.18 um, RF
0.11 um
0.315 um - 0.35 um
0.13 um
0.13 um
0.13 um
0.18 um, RF
0.6 um - 0.8 um BiCMOS
0.18 um, RF
0.11 um
0.11 um
0.6 um - 0.8 um BiCMOS
0.18 um, RF
0.18 um, RF
0.18 um, RF
0.11 um
0.11 um
0.11 um
55 nm
0.11 um
0.11 um
0.13 um
0.11 um
0.13 um
0.13 um
0.13 um
0.13 um
0.11 um
0.13 um
0.11 um
0.11 um
0.11 um
0.35 um, embedded flash
0.13 um
0.13 um
0.13 um
0.13 um
0.13 um
0.11 um
0.11 um
0.13 um
0.13 um
0.11 um
0.11 um
14Q3_QR_Report-01
PN
Si483X-B
Si484X
Si49XX
Si5010
Si50122
Si5013
Si502X
Si504X
Si510X
Si511X
Si512X
Si5211X
Si5213X
Si5214X
Si530X
Si5310
Si53102
Si53112
Si5315
Si5315X
Si5316
Si5317
Si5319
Si5320
Si5321
Si5322
Si5323
Si5324
Si5325
Si5326
Si5327
Si5328
Si533X
Si535X
Si5364
Si5365
Si5366
Si5367
Si5368
Si5369
Si537X
Si5409X
Si700X
Si701X
Si702X
Si804X
Si805X
Si806X
Si822X
Si822X
Si823X
Si823X
Si824X
Si825X
Si826X
Si826X
Si83XX
Si84XX
Si850X
Si851X
Si854X
Si86XX
Si87XX
Si87XX
Si890X
Technology
0.11 um
0.11 um
0.6 um - 0.8 um BiCMOS
0.25 um
0.13 um
0.25 um
0.25 um
0.13 um
0.15 um
0.15 um
0.18 um
0.18 um
0.18 um, RF
0.18 um, RF
0.13 um
0.25 um
0.18 um
0.18 um, RF
0.13 um
0.18 um, RF
0.13 um
0.13 um
0.13 um
0.25 um
0.25 um
0.13 um
0.13 um
0.13 um
0.13 um
0.13 um
0.13 um
0.13 um
0.13 um
0.13 um
0.25 um
0.13 um
0.13 um
0.13 um
0.13 um
0.13 um
0.13 um
0.18 um, OTP
0.18 um, RF
0.18 um, embedded flash
0.18 um, embedded flash
0.25 um
0.25 um
0.25 um
0.25 um
High Voltage
0.25 um
High Voltage
0.25 um
0.25 um, embedded flash
0.25 um
High Voltage
0.6 um - 1.0 um
0.25 um
0.315 um - 0.35 um
0.315 um - 0.35 um
0.6 um - 1.0 um
0.25 um
0.25 um
High Voltage
0.18 um, OTP
All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs.
Pg. 7/65
Silicon Laboratories
TITLE
PN
Si890X
Si890X
SiM3XXXX
SL151
SL15100CZC-1T
SL15100ZC-38AT
SL153
SL15300DZC-56
SL15300EZC-70
SL15300EZC-75
SL15300EZC-77
SL158
SL16XX
SL188X
SL2304
SL2305
SL2309
SL23EP
SL2850
SL2854
SL2861
SL2864
SL2874
SL28770
SL28776
SL28DB
SL28EB636
SL28EB717
SL28EB720
SL28EB731
SL28EB742
SL28EB745
SL28PCIE06
SL28PCIE14
SL28PCIE16
SL28PCIE19
SL28PCIE2
SL28SR
SL3800
SL38000CZC-31BT
SL38020
SL3816
SL38160CZC-30BT
TGXXXFX
TS1001
TS1002
TS1003
TS1004
TS1005
TS11XX
TS12XX
TS3002
TS3004
TS3300
TS3310
TS6XXX
TS7XXX
TSM12XX
TSM60XX
TSM91XX
TSM92XX
TSM97XX
TSM99XX
W1XXX
W4XXX
Quarterly Quality & Reliability Report
Technology
0.18 um, OTP
0.25 um
0.18 um, embedded flash
0.18 um, RF
0.35 um, embedded flash
0.35 um, embedded flash
0.18 um, RF
0.35 um, EEPROM
0.35 um, EEPROM
0.35 um, EEPROM
0.35 um, EEPROM
0.18 um, RF
0.18 um, RF
0.18 um, RF
0.18 um, RF
0.18 um, RF
0.18 um, RF
0.18 um, RF
0.25 um
0.25 um
0.18 um, RF
0.25 um
0.18 um
0.18 um
0.18 um, RF
0.25 um
0.18 um
0.18 um
0.18 um
0.18 um, RF
0.18 um
0.18 um
0.18 um
0.18 um, RF
0.18 um
0.18 um, RF
0.18 um
0.18 um
0.18 um, RF
0.35 um, embedded flash
0.18 um, OTP
0.18 um, RF
0.35 um, embedded flash
0.18 um, embedded flash
High Voltage
High Voltage
0.18 um, OTP
High Voltage
0.18 um, OTP
0.6 um - 1.0 um
High Voltage
0.18 um
High Voltage
High Voltage
0.18 um, OTP
0.6 um - 1.0 um
0.18 um
0.18 um
0.6 um - 1.0 um
0.18 um
0.18 um
0.18 um
0.6 um - 1.0 um
0.45 um - 0.5 um
0.45 um - 0.5 um
PN
W4XXX
WGXXX
ZGXXX
Doc ID
Technology
0.45 um - 0.5 um
0.18 um, embedded flash
0.18 um, embedded flash
14Q3_QR_Report-01
PN
Technology
All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs.
Pg. 8/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Failure Rate Estimation
Failure in Time (FIT)
A long-term, steady-state failure rate is often required by circuit and system engineers for
allocations of the failure rates at the component level during system design. FIT, which stands for
failure-in-time, is a widely used term to describe failure rates of electronic components, and as
used here, represents the number of failures in a billion hours of operation. FIT rates are reported
in the following section as curves and in tables for specific temperatures and assumptions.
Mean Time to Failure (MTTF)
Another way to express failure rates is by mean time to failure (MTTF). MTTF is the inverse of the
FIT rate and is useful for repair and maintenance planning. This relationship can be seen by
examining the units of each measure: MTTF is given in time/failure; FIT is given in failure/time.
MTTF is reported in the tables following the FIT rate curves for each specific fab technology.
Failure Rate Calculation Method
Long-term failure rates are estimated by applying the Arrhenius equation to data collected from
long term operating life tests. A confidence factor is applied based upon the sample size and
number of failures to estimate the maximum failure rate at a specific confidence level. The
calculation details are provided in the table below each of the following FIT rate curves.
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Pg. 9/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
FIT Rate Curves and Data
Process - 0.11 micron
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Pg. 10/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for 0.11 micron
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
6351
6351
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
0
0
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
Calculated Values:
Af
239.4
v
2.0
DH
6351023
X2
4.6
FIT
1.5
MTTF
MTTF
6.6E+08
75370.0
8.61E-05 Boltzman's constant [eV/K]
239.4
2.0
6351023
1.8
0.6
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
1.7E+09 Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
189400.4 Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for 0.11 micron
Tja
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
Af
1971.6
1257.7
814.1
534.4
355.4
239.4
163.2
112.5
78.5
55.3
39.3
28.3
20.5
15.0
11.1
8.2
6.2
4.7
3.5
2.7
FIT (90%)
0.2
0.3
0.4
0.7
1.0
1.5
2.2
3.2
4.6
6.6
9.2
12.8
17.7
24.2
32.8
44.0
58.7
77.7
102.1
133.3
FIT (60%)
0.1
0.1
0.2
0.3
0.4
0.6
0.9
1.3
1.8
2.6
3.7
5.1
7.0
9.6
13.0
17.5
23.4
30.9
40.6
53.0
MTTF
MTTF
90% (yrs) 60% (yrs)
620800
1560035
396021
995177
256342
644173
168250
422801
111901
281202
75370
189400
51380
129114
35431
89035
24703
62076
17405
43737
12387
31128
8901
22368
6455
16222
4723
11869
3485
8759
2593
6516
1944
4886
1469
3691
1118
2809
856
2152
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Pg. 11/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Process - 0.13 micron
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Pg. 12/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for 0.13 micron
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
6636
6636
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
1
1
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
8.61E-05 Boltzman's constant [eV/K]
Calculated Values:
Af
239.4
v
4.0
DH
6635649
X2
7.8
FIT
2.4
239.4
4.0
6635649
4.0
1.3
MTTF
MTTF
7.9E+08
89661.4
4.1E+08
46616.1
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for 0.13 micron
Tja
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
Af
1971.6
1257.7
814.1
534.4
355.4
239.4
163.2
112.5
78.5
55.3
39.3
28.3
20.5
15.0
11.1
8.2
6.2
4.7
3.5
2.7
FIT (90%)
0.3
0.5
0.7
1.1
1.6
2.4
3.6
5.2
7.5
10.6
14.9
20.7
28.6
39.1
53.0
71.2
94.9
125.7
165.1
215.5
FIT (60%)
0.2
0.2
0.4
0.6
0.9
1.3
1.9
2.7
3.9
5.5
7.7
10.8
14.9
20.3
27.5
37.0
49.4
65.3
85.9
112.1
MTTF
MTTF
90% (yrs) 60% (yrs)
383963
738514
244937
471113
158547
304949
104062
200152
69211
133120
46616
89661
31778
61122
21914
42149
15278
29387
10765
20705
7661
14736
5505
10589
3993
7679
2921
5619
2156
4146
1604
3085
1203
2313
908
1747
691
1330
530
1019
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Pg. 13/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Process - 0.15 micron
Failure Rate as a Function of Junction Temperature
Estimated upper bound at two confidence levels
9000.0
8000.0
7000.0
6000.0
FIT Rate
5000.0
FIT (90%)
4000.0
FIT (60%)
3000.0
2000.0
1000.0
0.0
25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120
Junction Temperature [C]
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Pg. 14/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
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Pg. 15/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Process - 0.18 micron
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Pg. 16/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for 0.18 micron
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
12026
12026
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
0
0
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
Calculated Values:
Af
239.4
v
2.0
DH
12025704
X2
4.6
FIT
0.8
MTTF
MTTF
1.3E+09
142713.6
8.61E-05 Boltzman's constant [eV/K]
239.4
2.0
12025704
1.8
0.3
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
3.1E+09 Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
358631.0 Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for 0.18 micron
Tja
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
Af
1971.6
1257.7
814.1
534.4
355.4
239.4
163.2
112.5
78.5
55.3
39.3
28.3
20.5
15.0
11.1
8.2
6.2
4.7
3.5
2.7
FIT (90%)
0.1
0.2
0.2
0.4
0.5
0.8
1.2
1.7
2.4
3.5
4.9
6.8
9.3
12.8
17.3
23.2
31.0
41.0
53.9
70.4
FIT (60%)
0.0
0.1
0.1
0.1
0.2
0.3
0.5
0.7
1.0
1.4
1.9
2.7
3.7
5.1
6.9
9.3
12.3
16.3
21.5
28.0
MTTF
MTTF
90% (yrs) 60% (yrs)
1175490
2953937
749868
1884375
485385
1219745
318582
800577
211886
532458
142714
358631
97288
244479
67088
168589
46774
117541
32956
82817
23455
58940
16854
42353
12223
30717
8944
22475
6600
16585
4910
12338
3681
9251
2781
6989
2116
5318
1622
4075
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Pg. 17/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Process - 0.18 micron w/ embedded flash
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Pg. 18/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for 0.18 micron w/ embedded flash
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
4244
4244
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
0
0
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
Calculated Values:
Af
239.4
v
2.0
DH
4243681
X2
4.6
FIT
2.3
MTTF
MTTF
4.4E+08
50361.4
8.61E-05 Boltzman's constant [eV/K]
239.4
2.0
4243681
1.8
0.9
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
1.1E+09 Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
126555.2 Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for 0.18 micron w/ embedded flash
MTTF
MTTF
Tja
Af
FIT (90%) FIT (60%) 90% (yrs) 60% (yrs)
25
1971.6
0.3
0.1
414812
1042398
30
1257.7
0.4
0.2
264617
664966
35
814.1
0.7
0.3
171285
430429
40
534.4
1.0
0.4
112422
282511
45
355.4
1.5
0.6
74771
187896
50
239.4
2.3
0.9
50361
126555
55
163.2
3.3
1.3
34331
86273
60
112.5
4.8
1.9
23674
59492
65
78.5
6.9
2.8
16506
41479
70
55.3
9.8
3.9
11630
29225
75
39.3
13.8
5.5
8277
20799
80
28.3
19.2
7.6
5948
14946
85
20.5
26.5
10.5
4313
10839
90
15.0
36.2
14.4
3156
7931
95
11.1
49.0
19.5
2329
5853
100
8.2
65.9
26.2
1733
4354
105
6.2
87.9
35.0
1299
3265
110
4.7
116.3
46.3
981
2466
115
3.5
152.9
60.8
747
1877
120
2.7
199.5
79.4
572
1438
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Pg. 19/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Process - 0.18 micron w/ OTP
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Pg. 20/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for 0.18 micron w/ OTP
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
3002
3002
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
0
0
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
8.61E-05 Boltzman's constant [eV/K]
Calculated Values:
Af
239.4
v
2.0
DH
3002496
X2
4.6
FIT
3.2
239.4
2.0
3002496
1.8
1.3
MTTF
MTTF
7.8E+08
89540.5
3.1E+08
35631.8
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for 0.18 micron w/ OTP
Tja
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
Af
1971.6
1257.7
814.1
534.4
355.4
239.4
163.2
112.5
78.5
55.3
39.3
28.3
20.5
15.0
11.1
8.2
6.2
4.7
3.5
2.7
FIT (90%)
0.4
0.6
0.9
1.4
2.2
3.2
4.7
6.8
9.8
13.9
19.5
27.1
37.4
51.1
69.3
93.1
124.2
164.4
216.0
282.0
FIT (60%)
0.2
0.2
0.4
0.6
0.9
1.3
1.9
2.7
3.9
5.5
7.8
10.8
14.9
20.3
27.6
37.1
49.4
65.4
86.0
112.2
MTTF
MTTF
90% (yrs) 60% (yrs)
293488
737519
187222
470478
121188
304538
79541
199883
52902
132940
35632
89541
24290
61040
16750
42092
11678
29347
8228
20677
5856
14716
4208
10575
3052
7669
2233
5611
1648
4141
1226
3081
919
2310
694
1745
528
1328
405
1017
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Pg. 21/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Process - 0.18 micron w/ RF
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Pg. 22/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for 0.18 micron w/ RF
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
1400
1400
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
0
0
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
8.61E-05 Boltzman's constant [eV/K]
Calculated Values:
Af
239.4
v
2.0
DH
1400339
X2
4.6
FIT
6.9
239.4
2.0
1400339
1.8
2.7
MTTF
MTTF
3.7E+08
41761.0
1.5E+08
16618.4
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for 0.18 micron w/ RF
Tja
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
Af
1971.6
1257.7
814.1
534.4
355.4
239.4
163.2
112.5
78.5
55.3
39.3
28.3
20.5
15.0
11.1
8.2
6.2
4.7
3.5
2.7
FIT (90%)
0.8
1.3
2.0
3.1
4.6
6.9
10.1
14.6
21.0
29.7
41.8
58.2
80.2
109.6
148.5
199.7
266.3
352.5
463.2
604.5
FIT (60%)
0.3
0.5
0.8
1.2
1.8
2.7
4.0
5.8
8.3
11.8
16.6
23.1
31.9
43.6
59.1
79.5
106.0
140.3
184.3
240.6
MTTF
MTTF
90% (yrs) 60% (yrs)
136880
343973
87319
219427
56521
142034
37097
93224
24673
62002
16618
41761
11329
28468
7812
19631
5447
13687
3838
9644
2731
6863
1963
4932
1423
3577
1041
2617
769
1931
572
1437
429
1077
324
814
246
619
189
475
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Pg. 23/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Process - 0.25 micron
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Pg. 24/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for 0.25 micron
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
8254
8254
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
0
0
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
Calculated Values:
Af
239.4
v
2.0
DH
8254397
X2
4.6
FIT
1.2
MTTF
MTTF
8.6E+08
97958.1
8.61E-05 Boltzman's constant [eV/K]
239.4
2.0
8254397
1.8
0.5
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
2.2E+09 Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
246162.9 Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for 0.25 micron
Tja
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
Af
1971.6
1257.7
814.1
534.4
355.4
239.4
163.2
112.5
78.5
55.3
39.3
28.3
20.5
15.0
11.1
8.2
6.2
4.7
3.5
2.7
FIT (90%)
0.1
0.2
0.3
0.5
0.8
1.2
1.7
2.5
3.6
5.0
7.1
9.9
13.6
18.6
25.2
33.9
45.2
59.8
78.6
102.6
FIT (60%)
0.1
0.1
0.1
0.2
0.3
0.5
0.7
1.0
1.4
2.0
2.8
3.9
5.4
7.4
10.0
13.5
18.0
23.8
31.3
40.8
MTTF
MTTF
90% (yrs) 60% (yrs)
806851
2027571
514707
1293428
333167
837228
218673
549513
145438
365477
97958
246163
66778
167809
46049
115719
32106
80680
22621
56845
16099
40456
11569
29071
8390
21084
6139
15427
4530
11384
3370
8469
2527
6350
1909
4797
1453
3650
1113
2797
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Pg. 25/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Process - 0.25 micron w/ embedded flash
Failure Rate as a Function of Junction Temperature
Estimated upper bound at two confidence levels
600.0
500.0
FIT Rate
400.0
FIT (90%)
300.0
FIT (60%)
200.0
100.0
0.0
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95 100 105 110 115 120
Junction Temperature [C]
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Pg. 26/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for 0.25 micron w/ embedded flash
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
1694
1694
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
0
0
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
8.61E-05 Boltzman's constant [eV/K]
Calculated Values:
Af
239.4
v
2.0
DH
1693540
X2
4.6
FIT
5.7
239.4
2.0
1693540
1.8
2.3
MTTF
MTTF
4.4E+08
50504.8
1.8E+08
20097.9
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for 0.25 micron w/ embedded flash
MTTF
MTTF
Tja
Af
FIT (90%) FIT (60%) 90% (yrs) 60% (yrs)
25
1971.6
0.7
0.3
165540
415993
30
1257.7
1.1
0.4
105601
265370
35
814.1
1.7
0.7
68355
171773
40
534.4
2.5
1.0
44865
112743
45
355.4
3.8
1.5
29839
74984
50
239.4
5.7
2.3
20098
50505
55
163.2
8.3
3.3
13701
34429
60
112.5
12.1
4.8
9448
23742
65
78.5
17.3
6.9
6587
16553
70
55.3
24.6
9.8
4641
11663
75
39.3
34.6
13.8
3303
8300
80
28.3
48.1
19.1
2374
5964
85
20.5
66.3
26.4
1721
4326
90
15.0
90.6
36.1
1260
3165
95
11.1
122.8
48.9
929
2336
100
8.2
165.1
65.7
691
1738
105
6.2
220.2
87.6
518
1303
110
4.7
291.5
116.0
392
984
115
3.5
383.0
152.4
298
749
120
2.7
499.9
198.9
228
574
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Pg. 27/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Process – 0.315 - 0.35 micron
Failure Rate as a Function of Junction Temperature
Estimated upper bound at two confidence levels
900.0
800.0
700.0
600.0
FIT Rate
500.0
FIT (90%)
400.0
FIT (60%)
300.0
200.0
100.0
0.0
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95 100 105 110 115 120
Junction Temperature [C]
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Pg. 28/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for 0.315 um - 0.35 um
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
1058
1058
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
0
0
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
8.61E-05 Boltzman's constant [eV/K]
Calculated Values:
Af
239.4
v
2.0
DH
1058304
X2
4.6
FIT
9.1
239.4
2.0
1058304
1.8
3.6
MTTF
MTTF
2.8E+08
31560.8
1.1E+08
12559.3
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for 0.315 um - 0.35 um
Tja
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
Af
1971.6
1257.7
814.1
534.4
355.4
239.4
163.2
112.5
78.5
55.3
39.3
28.3
20.5
15.0
11.1
8.2
6.2
4.7
3.5
2.7
FIT (90%) FIT (60%)
1.1
0.4
1.7
0.7
2.7
1.1
4.1
1.6
6.1
2.4
9.1
3.6
13.3
5.3
19.3
7.7
27.7
11.0
39.4
15.7
55.3
22.0
77.0
30.6
106.1
42.2
145.0
57.7
196.5
78.2
264.2
105.1
352.4
140.2
466.4
185.6
612.9
243.9
799.9
318.3
MTTF
MTTF
90% (yrs) 60% (yrs)
103447
259957
65991
165832
42716
107342
28036
70454
18647
46858
12559
31561
8562
21515
5904
14836
4116
10344
2900
7288
2064
5187
1483
3727
1076
2703
787
1978
581
1460
432
1086
324
814
245
615
186
468
143
359
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Pg. 29/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Process - 0.35 micron
Failure Rate as a Function of Junction Temperature
Estimated upper bound at two confidence levels
450.0
400.0
350.0
300.0
FIT Rate
250.0
FIT (90%)
200.0
FIT (60%)
150.0
100.0
50.0
0.0
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95 100 105 110 115 120
Junction Temperature [C]
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Pg. 30/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for 0.35 micron
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
2133
2133
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
0
0
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
8.61E-05 Boltzman's constant [eV/K]
Calculated Values:
Af
239.4
v
2.0
DH
2132616
X2
4.6
FIT
4.5
239.4
2.0
2132616
1.8
1.8
MTTF
MTTF
5.6E+08
63599.0
2.2E+08
25308.6
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for 0.35 micron
Tja
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
Af
1971.6
1257.7
814.1
534.4
355.4
239.4
163.2
112.5
78.5
55.3
39.3
28.3
20.5
15.0
11.1
8.2
6.2
4.7
3.5
2.7
FIT (90%) FIT (60%)
0.5
0.2
0.9
0.3
1.3
0.5
2.0
0.8
3.0
1.2
4.5
1.8
6.6
2.6
9.6
3.8
13.8
5.5
19.5
7.8
27.4
10.9
38.2
15.2
52.7
21.0
72.0
28.6
97.5
38.8
131.1
52.2
174.9
69.6
231.5
92.1
304.2
121.0
397.0
158.0
MTTF
MTTF
90% (yrs) 60% (yrs)
208459
523846
132980
334172
86077
216307
56497
141973
37575
94425
25309
63599
17253
43355
11897
29897
8295
20845
5844
14687
4159
10452
2989
7511
2168
5447
1586
3986
1170
2941
871
2188
653
1641
493
1239
375
943
288
723
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Pg. 31/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Process - 0.35 micron w/ embedded flash
Failure Rate as a Function of Junction Temperature
Estimated upper bound at two confidence levels
900.0
800.0
700.0
600.0
FIT Rate
500.0
FIT (90%)
400.0
FIT (60%)
300.0
200.0
100.0
0.0
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95 100 105 110 115 120
Junction Temperature [C]
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Pg. 32/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for 0.35 micron w/ embedded flash
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
1074
1074
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
0
0
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
8.61E-05 Boltzman's constant [eV/K]
Calculated Values:
Af
239.4
v
2.0
DH
1074312
X2
4.6
FIT
9.0
239.4
2.0
1074312
1.8
3.6
MTTF
MTTF
2.8E+08
32038.2
1.1E+08
12749.3
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for 0.35 micron w/ embedded flash
MTTF
MTTF
Tja
Af
FIT (90%) FIT (60%) 90% (yrs) 60% (yrs)
25
1971.6
1.1
0.4
105012
263889
30
1257.7
1.7
0.7
66989
168340
35
814.1
2.6
1.0
43362
108966
40
534.4
4.0
1.6
28460
71519
45
355.4
6.0
2.4
18929
47567
50
239.4
9.0
3.6
12749
32038
55
163.2
13.1
5.2
8691
21840
60
112.5
19.0
7.6
5993
15061
65
78.5
27.3
10.9
4179
10501
70
55.3
38.8
15.4
2944
7398
75
39.3
54.5
21.7
2095
5265
80
28.3
75.8
30.2
1506
3784
85
20.5
104.5
41.6
1092
2744
90
15.0
142.9
56.9
799
2008
95
11.1
193.6
77.0
590
1482
100
8.2
260.3
103.6
439
1102
105
6.2
347.1
138.1
329
826
110
4.7
459.5
182.8
248
624
115
3.5
603.8
240.3
189
475
120
2.7
788.0
313.6
145
364
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Pg. 33/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Process - 0.45 - 0.5 um SPTM
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Pg. 34/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for 0.45 - 0.5 um SPTM
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
289
289
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
0
0
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
Calculated Values:
Af
239.4
v
2.0
DH
289064
X2
4.6
FIT
33.3
MTTF
MTTF
3.0E+07
3430.4
8.61E-05 Boltzman's constant [eV/K]
239.4
2.0
289064
1.8
13.2
7.6E+07
8620.5
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for 0.45 - 0.5 um SPTM
Tja
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
Af
1971.6
1257.7
814.1
534.4
355.4
239.4
163.2
112.5
78.5
55.3
39.3
28.3
20.5
15.0
11.1
8.2
6.2
4.7
3.5
2.7
FIT (90%)
4.0
6.3
9.8
14.9
22.4
33.3
48.8
70.8
101.5
144.1
202.5
281.8
388.5
531.0
719.6
967.2
1290.0
1707.6
2244.1
2928.7
FIT (60%)
1.6
2.5
3.9
5.9
8.9
13.2
19.4
28.2
40.4
57.3
80.6
112.1
154.6
211.3
286.4
384.9
513.3
679.5
893.0
1165.4
MTTF
MTTF
90% (yrs) 60% (yrs)
28255
71004
18025
45295
11667
29319
7658
19244
5093
12799
3430
8620
2339
5877
1613
4052
1124
2825
792
1991
564
1417
405
1018
294
738
215
540
159
399
118
297
88
222
67
168
51
128
39
98
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Pg. 35/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Process - 0.6 - 1.0um
Failure Rate as a Function of Junction Temperature
Estimated upper bound at two confidence levels
2000.0
1800.0
1600.0
1400.0
FIT Rate
1200.0
FIT (90%)
1000.0
FIT (60%)
800.0
600.0
400.0
200.0
0.0
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95 100 105 110 115 120
Junction Temperature [C]
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Pg. 36/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for 0.6 - 1.0um
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
481
481
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
0
0
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
8.61E-05 Boltzman's constant [eV/K]
Calculated Values:
Af
239.4
v
2.0
DH
481487
X2
4.6
FIT
20.0
239.4
2.0
481487
1.8
8.0
MTTF
MTTF
1.3E+08
14358.9
5.0E+07
5714.0
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for 0.6 - 1.0um
Tja
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
Af
1971.6
1257.7
814.1
534.4
355.4
239.4
163.2
112.5
78.5
55.3
39.3
28.3
20.5
15.0
11.1
8.2
6.2
4.7
3.5
2.7
FIT (90%) FIT (60%)
2.4
1.0
3.8
1.5
5.9
2.3
8.9
3.6
13.5
5.4
20.0
8.0
29.3
11.7
42.5
16.9
61.0
24.3
86.5
34.4
121.6
48.4
169.2
67.3
233.3
92.8
318.8
126.9
432.0
171.9
580.7
231.1
774.5
308.2
1025.2
408.0
1347.2
536.1
1758.2
699.7
MTTF
MTTF
90% (yrs) 60% (yrs)
47064
118270
30023
75447
19434
48836
12755
32054
8484
21319
5714
14359
3895
9788
2686
6750
1873
4706
1319
3316
939
2360
675
1696
489
1230
358
900
264
664
197
494
147
370
111
280
85
213
65
163
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Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Process – 55 nm
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Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for 55 nm
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
1209
1209
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
1
1
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
8.61E-05 Boltzman's constant [eV/K]
Calculated Values:
Af
239.4
v
4.0
DH
1209190
X2
7.8
FIT
13.4
239.4
4.0
1209190
4.0
7.0
MTTF
MTTF
1.4E+08
16338.7
7.4E+07
8494.7
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for 55 nm
Tja
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
Af
1971.6
1257.7
814.1
534.4
355.4
239.4
163.2
112.5
78.5
55.3
39.3
28.3
20.5
15.0
11.1
8.2
6.2
4.7
3.5
2.7
FIT (90%)
1.6
2.6
4.0
6.0
9.1
13.4
19.7
28.6
41.0
58.2
81.8
113.8
156.9
214.4
290.6
390.6
520.9
689.6
906.2
1182.7
FIT (60%)
0.8
1.3
2.1
3.1
4.7
7.0
10.2
14.9
21.3
30.3
42.5
59.2
81.6
111.5
151.1
203.1
270.8
358.5
471.2
614.9
MTTF
MTTF
90% (yrs) 60% (yrs)
69968
134577
44634
85849
28891
55570
18963
36473
12612
24258
8495
16339
5791
11138
3993
7681
2784
5355
1962
3773
1396
2685
1003
1930
728
1399
532
1024
393
756
292
562
219
421
166
318
126
242
97
186
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Silicon Laboratories
TITLE
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Doc ID
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Process – Diode
Failure Rate as a Function of Junction Temperature
Estimated upper bound at two confidence levels
5000.0
4500.0
4000.0
3500.0
FIT Rate
3000.0
FIT (90%)
2500.0
FIT (60%)
2000.0
1500.0
1000.0
500.0
0.0
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95 100 105 110 115 120
Junction Temperature [C]
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TITLE
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Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for Diode
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
188
188
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
0
0
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
8.61E-05 Boltzman's constant [eV/K]
Calculated Values:
Af
239.4
v
2.0
DH
187703
X2
4.6
FIT
51.2
239.4
2.0
187703
1.8
20.4
MTTF
MTTF
4.9E+07
5597.7
2.0E+07
2227.5
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for Diode
Tja
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
Af
1971.6
1257.7
814.1
534.4
355.4
239.4
163.2
112.5
78.5
55.3
39.3
28.3
20.5
15.0
11.1
8.2
6.2
4.7
3.5
2.7
FIT (90%) FIT (60%)
6.2
2.5
9.8
3.9
15.1
6.0
23.0
9.1
34.5
13.7
51.2
20.4
75.2
29.9
109.0
43.4
156.4
62.2
221.9
88.3
311.8
124.1
433.9
172.7
598.3
238.1
817.7
325.4
1108.2
441.0
1489.6
592.8
1986.6
790.6
2629.7
1046.5
3455.9
1375.2
4510.2
1794.8
MTTF
MTTF
90% (yrs) 60% (yrs)
18348
46107
11704
29412
7576
19038
4973
12496
3307
8311
2228
5598
1519
3816
1047
2631
730
1835
514
1293
366
920
263
661
191
479
140
351
103
259
77
193
57
144
43
109
33
83
25
64
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TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Process - High Voltage
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Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability FIT Calculations for temperature acceleration
Single Point Calculation for High Voltage
Variables:
90%
60%
Confidence Level
Tja [C]
50
50
Junction Temperature at operating condition
Tsa [C]
125
125
Ambient Temperature at stress
Tjs [C]
140
140
Junction Temperature at stress (assume 15C rise)
Ea
0.7
0.7
Energy Activation
D
4106
4106
Equivalent Devices stressed (Assuming 1000hrs per device)
H
1000
1000
Number of hours on stress
F
0
0
Number of failures
P
0.1
0.4
Confidence Level [.1 = 90%; .4 = 60%]
Constants:
k
8.61E-05
Calculated Values:
Af
239.4
v
2.0
DH
4105994
X2
4.6
FIT
2.3
MTTF
MTTF
4.3E+08
48727.4
8.61E-05 Boltzman's constant [eV/K]
239.4
2.0
4105994
1.8
0.9
Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))]
degrees of freedom [2(F+1)]
Total device hours D*H
Chi-Square Distribution Value
Failures in time [failures / 1xE9 hours]
=[X2/(2*AF*D*H)*1E9]
1.1E+09 Mean Time To Failure [hours] (Note: MTTF is 1/FIT)
122449.1 Mean Time To Failure [years] (Note: MTTF is 1/FIT)
FIT Estimation Curves for High Voltage
Tja
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
Af
1971.6
1257.7
814.1
534.4
355.4
239.4
163.2
112.5
78.5
55.3
39.3
28.3
20.5
15.0
11.1
8.2
6.2
4.7
3.5
2.7
FIT (90%)
0.3
0.4
0.7
1.0
1.6
2.3
3.4
5.0
7.1
10.1
14.3
19.8
27.4
37.4
50.7
68.1
90.8
120.2
158.0
206.2
FIT (60%)
0.1
0.2
0.3
0.4
0.6
0.9
1.4
2.0
2.8
4.0
5.7
7.9
10.9
14.9
20.2
27.1
36.1
47.8
62.9
82.0
MTTF
MTTF
90% (yrs) 60% (yrs)
401353
1008577
256031
643391
165728
416464
108775
273345
72345
181800
48727
122449
33217
83474
22906
57562
15970
40133
11252
28276
8008
20124
5755
14461
4173
10488
3054
7674
2253
5663
1676
4213
1257
3159
950
2386
723
1816
554
1391
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TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
0.11um OTP Reliability Summary
Effective Dev-Hrs
at 150°C
Chargeable
Failures
1,126,000
Typical Case:
Predicted FIT
@Ta=50°C,
Worst Case:
Predicted FIT
@Ta=85°C,
60% UCL
10 Year Predicted
Failure Rate
Ta=50°C
60% UCL
60% UCL
10 Year Predicted
Failure Rate
Ta=85°C
60% UCL
5.7
0.050%
44.3
0.388%
0
Data Retention Reliability
1000000
MTTF (Years)
100000
10000
1000
100
10
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
100 110 125
90
100 110 125
Use Temperature [C]
5 Year Continuous Use Fallout
(% )
Data Retention Reliability
Continuous Use Fallout
10%
1%
0%
0%
0%
20
25
30
35
40
45
50
55
60
65
70
75
80
85
Use Temperature [C]
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TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
0.13um OTP Reliability Summary
Effective Dev-Hrs
at 150°C
Chargeable
Failures
Typical Case:
Predicted FIT
@Ta=50°C,
60% UCL
10 Year Predicted
Failure Rate
Ta=50°C
60% UCL
Worst Case:
Predicted FIT
@Ta=85°C,
60% UCL
10 Year Predicted
Failure Rate
Ta=85°C
60% UCL
0
3.7
0.033%
29.1
0.255%
1,716,000
Data Retention Reliability
1000000
MTTF (Years)
100000
10000
1000
100
10
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
100
110
125
85
90
100
110
125
Use Temperature [C]
5 Year Continuous Use Fallout
(%)
Data Retention Reliability
Continuous Use Fallout
10%
1%
0%
0%
0%
20
25
30
35
40
45
50
55
60
65
70
75
80
Use Temperature [C]
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Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
0.18um Flash Reliability Summary
Effective Dev-Hrs
at 150°C
Chargeable
Failures
17,578,301
Typical Case:
Predicted FIT
@Ta=50°C,
Worst Case:
Predicted FIT
@Ta=85°C,
60% UCL
10 Year Predicted
Failure Rate
Ta=50°C
60% UCL
60% UCL
10 Year Predicted
Failure Rate
Ta=85°C
60% UCL
0.4
0.003%
2.8
0.025%
0
Data Retention Reliability
10000000
1000000
MTTF (Years)
100000
10000
1000
100
10
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
100 110 125
90
100 110 125
Use Temperature [C]
5 Year Continuous Use Fallout
(% )
Data Retention Reliability
Continuous Use Fallout
10%
1%
0%
0%
0%
0%
20
25
30
35
40
45
50
55
60
65
70
75
80
85
Use Temperature [C]
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TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
0.18um OTP Reliability Summary
Effective Dev-Hrs
at 150°C
Chargeable
Failures
14,005,512
Typical Case:
Predicted FIT
@Ta=50°C,
Worst Case:
Predicted FIT
@Ta=85°C,
60% UCL
10 Year Predicted
Failure Rate
Ta=50°C
60% UCL
60% UCL
10 Year Predicted
Failure Rate
Ta=85°C
60% UCL
0.5
0.004%
3.6
0.031%
0
Data Retention Reliability
10000000
1000000
MTTF (Years)
100000
10000
1000
100
10
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
100 110 125
90
100 110 125
Use Temperature [C]
5 Year Continuous Use Fallout
(% )
Data Retention Reliability
Continuous Use Fallout
10%
1%
0%
0%
0%
0%
20
25
30
35
40
45
50
55
60
65
70
75
80
85
Use Temperature [C]
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Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
0.25um HDR Flash Reliability Summary
Effective Dev-Hrs
at 150°C
Chargeable
Failures
4,315,033
Typical Case:
Predicted FIT
@Ta=50°C,
Worst Case:
Predicted FIT
@Ta=85°C,
60% UCL
10 Year Predicted
Failure Rate
Ta=50°C
60% UCL
60% UCL
10 Year Predicted
Failure Rate
Ta=85°C
60% UCL
1.5
0.013%
11.6
0.101%
0
Data Retention Reliability
1000000
MTTF (Years)
100000
10000
1000
100
10
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
100 110 125
90
100 110 125
Use Temperature [C]
5 Year Continuous Use Fallout
(% )
Data Retention Reliability
Continuous Use Fallout
10%
1%
0%
0%
0%
0%
20
25
30
35
40
45
50
55
60
65
70
75
80
85
Use Temperature [C]
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TITLE
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Doc ID
14Q3_QR_Report-01
0.35um Non-HE Flash Reliability Summary
Effective Dev-Hrs
at 150°C
Chargeable
Failures
7,472,366
Typical Case:
Predicted FIT
@Ta=50°C,
Worst Case:
Predicted FIT
@Ta=85°C,
60% UCL
10 Year Predicted
Failure Rate
Ta=50°C
60% UCL
60% UCL
10 Year Predicted
Failure Rate
Ta=85°C
60% UCL
0.9
0.008%
6.7
0.059%
0
Data Retention Reliability
10000000
1000000
MTTF (Years)
100000
10000
1000
100
10
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
100 110 125
90
100 110 125
Use Temperature [C]
5 Year Continuous Use Fallout
(% )
Data Retention Reliability
Continuous Use Fallout
10%
1%
0%
0%
0%
0%
20
25
30
35
40
45
50
55
60
65
70
75
80
85
Use Temperature [C]
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TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
0.35um HE Flash Reliability Summary
Effective Dev-Hrs
at 150°C
Chargeable
Failures
Typical Case:
Predicted FIT
@Ta=50°C,
60% UCL
10 Year Predicted
Failure Rate
Ta=50°C
60% UCL
Worst Case:
Predicted FIT
@Ta=85°C,
60% UCL
10 Year Predicted
Failure Rate
Ta=85°C
60% UCL
0
2.7
0.024%
21.1
0.184%
2,371,053
Data Retention Reliability
1000000
MTTF (Years)
100000
10000
1000
100
10
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
100
110
125
85
90
100
110
125
Use Temperature [C]
5 Year Continuous Use Fallout
(%)
Data Retention Reliability
Continuous Use Fallout
10%
1%
0%
0%
0%
20
25
30
35
40
45
50
55
60
65
70
75
80
Use Temperature [C]
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Silicon Laboratories
TITLE
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Doc ID
14Q3_QR_Report-01
Reliability Monitor Program
Overview
Once a product is qualified, we verify continued product reliability with a reliability monitor
program. The monitor program is scheduled to periodically sample wafer fab and package
technologies. The results are published in this report. Any failures are used to drive corrective
action and product and process improvement.
Stress Descriptions
Silicon Laboratories follows JEDEC as the preferred industry standard. The most common
reliability tests and conditions are listed in the following table. The specific JEDEC documents are
available on the Internet at www.jedec.org.
Reliability Tests, Procedures and Conditions Table
Symbol
DR
Stress Name
Data Retention Bake
Stress Procedure
AEC_Q100
Standard Conditions
150°C (pkg form); 250C (wafer)
ELFR
Early Life Failure Rate
JEDEC JESD22-A108
125°C; Max operating voltage
HAST
Highly-Accelerated Temperature
and Humidity Stress Test
JEDEC JESD22-A110
130°C; 85%rh; 22.2 psia; biased
HTB
High Temperature Bake
JEDEC JESD22-A103
150°C
LTOL
Low Temperature Operating Life
JEDEC JESD22-A108
-10°C; Max operating voltage
HTOL
High Temperature Operating Life
JEDEC JESD22-A108
125°C; Max operating voltage
PC
Preconditioning
JEDEC JESD22-A113
According to MSL level prior to
package stresses (listed below)
TC
Temperature Cycle
JEDEC JESD22-A104
Condition C: -65 to 150°C
Unbiased HAST
JEDEC JESD22-A118
130°C; 85%rh
Temperature Humidity Bias
JEDEC JESD22-A101
85°C; 85%RH; Max operating voltage
U-HAST
THB
Qualification
Guideline
Stress Test Driven Qualification of Integrated Circuits; EIA / JEDEC EIA/JESD47 / AEC-Q100
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TITLE
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Doc ID
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Silicon Reliability Test Method and Conditions
Early Life Failure Rate (ELFR)
The purpose of this test is to simulate the user operation over the first portion of the product
lifetime, also called early life. Silicon Laboratories typically uses dynamic conditions, meaning the
device is powered up, and the inputs are toggled to exercise a maximum number of transistors
and circuit area. Reliability acceleration is accomplished primarily by temperature and
secondarily by voltage.
High Temperature Operating Life (HTOL)
The purpose of this test is to simulate the user part operation over the expected life of the
product. We typically use dynamic conditions, meaning the device is powered up, and the inputs
are toggled to exercise a maximum number of transistors and circuit area. Reliability acceleration
is accomplished primarily by temperature and secondarily by voltage.
High Temperature Storage Life (HTSL) / High Temperature Bake (HTB)
The purpose of this test is to determine the effect of storage at elevated temperature. This is
performed to assess the stability of semiconductor device materials and interfaces.
Low Temperature Operating Life (LTOL)
The purpose of this test is to simulate the user operation at low temperature. This is a specialized
test to address specific fab failure mechanisms, such as hot-carrier injection. Wafer level
reliability tests are more effective for this characterization and are the primary qualification
method. Silicon Laboratories typically uses dynamic conditions, meaning the device is powered
up, and the inputs are toggled to exercise a maximum number of transistors and circuit area.
Nonvolatile Memory Data Retention (DR)
The purpose of this test is to measure the ability of a nonvolatile memory cell to retain its charge
state at elevated temperature in the absence of applied external bias. This test can be done
either in wafer form or on packaged units.
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Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability Monitor Report – Silicon Stresses
QLotNum
Stress
FabProcess
ReadDate
SampleSize
ReadPt
Fails
ºC
Q035242
Q035241
Q035033
Q035637
Q035612
Q035671
Q035721
Q035137
Q035944
Q035945
Q034371
Q034416
Q035141
Q035078
Q035803
Q035911
Q035910
Q035909
Q036080
Q034720
Q034931
Q034932
Q034746
Q033443
Q034933
Q035015
Q035041
Q035024
Q035023
Q035456
Q035518
Q035519
Q035639
Q035468
Q035660
Q035670
Q034644
Q034752
Q034773
Q034677
Q034804
Q034753
Q034843
Q034842
Q035034
HTSL
HTSL
HTSL
ELFR
ELFR
ELFR
HTOL
HTOL
ELFR
HTOL
HTOL
ELFR
ELFR
HTOL
ELFR
HTSL
HTSL
HTSL
ELFR
ELFR
ELFR
ELFR
HTOL
HTSL
HTOL
HTSL
LTOL
HTOL
HTOL
ELFR
ELFR
ELFR
ELFR
HTOL
ELFR
ELFR
HTSL
ELFR
HTOL
HTSL
HTSL
HTOL
HTSL
HTSL
ELFR
0.11 um
0.11 um
0.11 um
0.11 um
0.11 um
0.11 um
0.11 um
0.11 um
0.11 um
0.11 um
0.13 um
0.13 um
0.13 um
0.13 um
0.13 um
0.13 um
0.13 um
0.13 um
0.13 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
02-Apr-14
02-Apr-14
02-Apr-14
03-Jun-14
03-Jun-14
12-Jun-14
31-Jul-14
31-Jul-14
25-Aug-14
15-Sep-14
04-Oct-13
18-Oct-13
16-Jan-14
27-Feb-14
30-Jun-14
25-Aug-14
25-Aug-14
25-Aug-14
22-Sep-14
09-Oct-13
15-Nov-13
18-Nov-13
20-Nov-13
26-Dec-13
02-Jan-14
16-Jan-14
24-Jan-14
28-Jan-14
28-Jan-14
22-Apr-14
08-May-14
12-May-14
28-May-14
31-May-14
01-Jun-14
06-Jun-14
21-Oct-13
22-Oct-13
25-Oct-13
28-Oct-13
02-Dec-13
05-Dec-13
07-Dec-13
07-Dec-13
20-Dec-13
49
48
78
507
814
818
81
85
812
83
80
504
510
76
506
26
26
26
433
503
504
509
77
30
84
30
38
85
84
518
519
519
523
80
520
517
27
826
88
27
27
99
50
49
900
1000
1000
1000
48
48
48
1000
1000
96
1000
1000
48
48
1000
48
1000
1000
1000
48
48
48
48
1000
1000
1000
1000
1000
1000
1000
48
48
48
48
1000
48
48
1000
48
24
1000
1000
1000
1000
1000
48
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
150
150
150
125
125
125
125
125
125
125
100
100
125
125
125
150
150
150
125
25
25
25
125
150
125
150
-10
90
90
90
90
90
25
90
25
25
150
125
125
150
150
125
150
150
125
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Pg. 53/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
QLotNum
Stress
FabProcess
ReadDate
SampleSize
ReadPt
Fails
ºC
Q034599
Q034598
Q034602
Q034775
Q034774
Q034778
Q034776
Q034895
Q034887
Q034888
Q034896
Q034885
Q034906
Q034618
Q035081
Q035080
Q034901
Q034893
Q034610
Q034995
Q034614
Q034886
Q034597
Q034596
Q034595
Q035602
Q035601
Q035600
Q034894
Q035165
Q035164
Q035163
Q035249
Q035378
Q035377
Q035597
Q035596
Q035595
Q035572
Q035963
Q035887
Q034789
Q034646
Q034645
Q034818
HTSL
HTSL
ELFR
HTSL
HTSL
LTDR
LTDR
LTDR
LTDR
HTDR
HTDR
HTSL
HTSL
HTSL
HTDR
HTDR
HTSL
HTSL
HTSL
HTSL
HTSL
ELFR
HTSL
HTSL
HTSL
HTDR
HTDR
HTDR
ELFR
HTSL
HTSL
HTSL
HTDR
HTDR
HTDR
HTOL
HTOL
HTOL
HTOL
HTDR
HTSL
ELFR
HTSL
HTOL
ELFR
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, embedded flash
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
15-Jan-14
15-Jan-14
17-Jan-14
24-Jan-14
24-Jan-14
24-Jan-14
24-Jan-14
29-Jan-14
29-Jan-14
03-Feb-14
05-Feb-14
14-Feb-14
19-Feb-14
19-Feb-14
21-Feb-14
21-Feb-14
21-Feb-14
21-Feb-14
21-Feb-14
22-Feb-14
22-Feb-14
27-Feb-14
10-Mar-14
10-Mar-14
10-Mar-14
17-Mar-14
17-Mar-14
17-Mar-14
28-Mar-14
03-Apr-14
03-Apr-14
03-Apr-14
09-Apr-14
08-May-14
08-May-14
15-May-14
15-May-14
15-May-14
07-Jun-14
07-Jul-14
20-Aug-14
22-Oct-13
22-Oct-13
23-Oct-13
24-Oct-13
30
30
500
99
100
100
100
40
40
40
39
29
30
30
87
86
30
30
30
30
30
520
30
30
30
80
80
80
503
27
27
27
107
40
40
81
80
84
80
80
27
304
26
80
300
1000
1000
48
1000
1000
1000
1000
500
500
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
48
1000
1000
1000
1000
1000
1000
48
1000
1000
1000
1000
1000
1000
1000
1000
1000
48
1000
1000
48
1000
1000
48
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
150
150
125
150
150
25
25
25
25
150
150
150
150
150
150
150
150
150
150
150
150
125
150
150
150
150
150
150
125
150
150
150
150
150
150
125
125
125
125
130
150
125
150
125
125
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Pg. 54/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
QLotNum
Stress
FabProcess
ReadDate
SampleSize
ReadPt
Fails
ºC
Q034716
Q035086
Q034986
Q034985
Q034984
Q035112
Q035126
Q035047
Q035044
Q035234
Q035245
Q035243
Q035244
Q035232
Q036021
Q036020
Q036019
Q034735
Q034729
Q034739
Q035779
Q035776
Q035773
Q035329
Q035328
Q035327
Q034623
Q034785
Q034669
Q034772
Q034787
Q034788
Q034926
Q035061
Q035116
Q035411
Q035443
Q035358
Q035359
Q035577
Q035578
Q034934
Q034668
Q034548
Q034630
HTSL
ELFR
HTOL
HTOL
HTOL
ELFR
ELFR
HTSL
HTSL
ELFR
ELFR
ELFR
ELFR
HTOL
HTSL
HTSL
HTSL
HTSL
HTSL
HTSL
HTSL
HTSL
HTSL
HTSL
HTSL
HTSL
HTOL
ELFR
HTSL
HTSL
HTOL
HTOL
HTSL
HTOL
HTSL
ELFR
HTSL
HTOL
HTOL
ELFR
ELFR
HTOL
ELFR
HTOL
HTSL
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, OTP
0.18 um, RF
0.18 um, RF
0.18 um, RF
0.18 um, RF
0.18 um, RF
0.18 um, RF
0.18 um, RF
0.18 um, RF
0.18 um, RF
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.25 um
0.45 um - 0.5 um
55 nm
55 nm
55 nm
05-Dec-13
17-Jan-14
22-Jan-14
22-Jan-14
22-Jan-14
28-Jan-14
03-Feb-14
17-Feb-14
17-Feb-14
21-Feb-14
26-Mar-14
10-Apr-14
22-Apr-14
22-Apr-14
15-Aug-14
15-Aug-14
15-Aug-14
15-Nov-13
15-Nov-13
02-Dec-13
24-May-14
24-May-14
24-May-14
26-Jun-14
26-Jun-14
26-Jun-14
18-Oct-13
23-Oct-13
25-Oct-13
07-Nov-13
20-Nov-13
20-Dec-13
09-Jan-14
05-Feb-14
28-Feb-14
26-Apr-14
08-May-14
29-Jun-14
30-Jun-14
12-Jul-14
16-Jul-14
02-Jan-14
02-Oct-13
17-Oct-13
21-Oct-13
30
600
78
79
78
600
570
30
30
30
816
810
813
80
25
25
25
50
50
50
25
25
25
25
25
25
80
820
80
80
95
95
80
86
78
820
80
82
82
828
814
83
1623
80
30
1500
48
1000
1000
1000
48
48
1500
1500
48
48
48
48
1000
1000
1000
1000
1000
1000
1000
500
500
500
1000
1000
1000
1000
48
500
500
1000
1000
1000
1000
500
48
500
1000
1000
48
48
1000
48
1000
1000
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
100
125
125
125
125
125
125
100
100
125
125
125
125
125
100
100
100
150
150
150
150
150
150
150
150
150
125
125
175
175
125
125
175
125
175
125
175
125
125
125
125
125
125
90
150
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Pg. 55/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
QLotNum
Stress
FabProcess
ReadDate
SampleSize
ReadPt
Fails
ºC
Q034987
Q035018
Q034816
Q034833
Q035121
Q035110
Q035178
Q035177
Q035176
Q035540
Q035520
Q035638
Q035936
Q035606
Q035553
Q035592
Q035622
Q035607
Q035640
Q035834
Q036058
Q035769
Q036059
Q035875
Q035845
Q036165
Q035905
Q035933
Q035892
Q036188
Q036187
Q035476
HTSL
ELFR
HTSL
HTSL
HTSL
HTOL
HTSL
HTSL
HTSL
ELFR
ELFR
ELFR
ELFR
HTOL
HTOL
HTSL
HTSL
HTOL
HTSL
ELFR
HTOL
LTOL
ELFR
ELFR
HTOL
ELFR
HTOL
HTSL
HTSL
HTSL
HTSL
HTOL
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
55 nm
High Voltage
28-Nov-13
29-Nov-13
03-Dec-13
06-Dec-13
12-Dec-13
17-Jan-14
29-Jan-14
29-Jan-14
29-Jan-14
14-May-14
20-May-14
06-Jun-14
23-Jun-14
26-Jun-14
26-Jun-14
02-Jul-14
07-Jul-14
08-Jul-14
10-Jul-14
25-Jul-14
08-Aug-14
11-Aug-14
13-Aug-14
16-Aug-14
16-Aug-14
22-Aug-14
29-Aug-14
29-Aug-14
29-Aug-14
10-Sep-14
10-Sep-14
09-Jun-14
25
500
26
30
25
80
25
25
25
178
523
572
501
85
85
25
77
79
27
1500
80
34
503
1250
85
505
85
77
77
25
25
80
1000
48
1000
1000
1000
1000
1000
1000
1000
48
48
48
48
1000
1000
1000
1000
1000
1000
48
1000
1000
48
48
1000
48
1000
1000
1000
1000
1000
1000
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
150
90
150
150
150
90
150
150
150
105
40
90
90
75
105
150
150
40
150
90
90
-10
90
90
90
90
90
150
150
150
150
125
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Pg. 56/65
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TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Package Reliability Test Method and Conditions
Preconditioning (PC)
This test method is performed to simulate the various shipping conditions, the end use
environment and customer board mounting process for a given packaging system.
Preconditioning is an industry standard flow for non-hermetic (plastic) integrated circuit packages
that is representative of a typical industry solder reflow operation. The test parts are subject to
bake, moisture soak and three reflow cycles prior to being submitted to package reliability testing.
Temperature Cycling (TC)
This test evaluates potential reliability degradation due to thermal cycling effects. Devices are
placed in a chamber using forced air to cycle devices between the specified temperature
extremes. This test is conducted to determine the ability of components and solder interconnects
to withstand mechanical stresses induced by alternating high and low temperature extremes.
Permanent changes in electrical and/or physical characteristics can result from these mechanical
stresses.
Temperature Humidity and Bias (THB)
This test evaluates the reliability of non-hermetic packaged integrated circuits in humid
environments. It employs severe conditions of temperature, humidity and bias to accelerate the
penetration of moisture through the external protective material (encapsulant) or along the
interface between the external protective material and the metallic conductors passing through it.
This test is less accelerated than autoclave and unbiased HAST and takes longer to complete. It
provides more realistic results in line with actual field performance. The dominant failure
mechanism is aluminum corrosion accelerated by moisture, bias and contamination.
Highly-Accelerated Temperature and Humidity Stress Test (HAST)
This test evaluates the reliability of non-hermetic packaged integrated circuits in humid
environments. It employs severe conditions of temperature, humidity, and bias which accelerate
the penetration of moisture through the external protective material (encapsulant or seal) or along
the interface between the external protective material and the metallic conductors which pass
through it. The stress usually activates the same failure mechanisms as the “85/85” Temperature
Humidity and Bias (THB) test.
Unbiased Highly-Accelerated Stress Test (U-HAST)
This test is performed to evaluate the reliability of non-hermetic packaged integrated circuits in
humid environments. It is an alternate to Autoclave and tests for the same failure mechanisms. It
employs severe conditions of temperature, humidity, and pressure to accelerate the penetration of
moisture through the external protective material (encapsulant) or along the interface between the
external protective material and the metallic conductors passing through it. UHAST is preferred
over the autoclave stress method due to the reduction in artifacts induced by the 100%rh
environment of autoclave, such as lead corrosion or contamination transfer by liquid water. The
dominant failure mechanism is corrosion of internal materials.
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TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reflow Profile and Moisture Sensitivity Level
Overview
Non-hermetic (plastic) integrated circuit packages are classified by moisture sensitivity level
according to IPC/JEDEC J-Std-020. It is critical for final product quality that the board assembly
process account for package moisture sensitivity, especially the peak reflow temperature and the
maximum manufacturing expose time (MET).
Reflow Profile
Non-hermetic integrated circuit SMD (surface mount devices) are qualified in compliance to the
applicable reflow profiles provided in IPC/JEDEC J-Std-020. The board assembler should not
exceed the limits defined in the reflow profile tables of IPC/JEDEC J-Std-020.
Moisture Sensitivity Level
The Moisture Sensitivity Level (MSL) and peak reflow temperature are indicated on each product
packing label.
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Pg. 58/65
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TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Reliability Monitor Report – Package Stresses
QLotNum
Stress
PkgType
Read Date
Sample Size
Read Point
Fails
Q035678
Q035679
Q035908
Q035907
Q035906
Q035914
Q035913
Q035912
Q035119
Q035120
Q035656
Q035654
Q035643
Q035641
Q036196
Q035275
Q034771
Q034770
Q035442
Q035341
Q035339
Q035331
Q035778
Q035775
Q035772
Q035755
Q035753
Q035736
Q036073
Q036072
Q036071
Q036070
Q036069
Q036068
Q034798
Q034718
Q035043
Q035042
Q035467
Q035466
Q035465
Q035464
Q035463
Q035462
Q034917
Q034964
Q035040
Q035039
Q035038
Temp Cycle
HAST
HAST
HAST
HAST
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
HAST
HAST
Temp Cycle
HAST
Temp Cycle
HAST
Temp Cycle
HAST
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
UHAST
UHAST
UHAST
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
THB
Temp Cycle
THB
Temp Cycle
Temp Cycle
Temp Cycle
THB
THB
THB
Temp Cycle
UHAST
UHAST
HAST
Temp Cycle
4-DFN-2.0X2.5
4-DFN-2.0X2.5
4-DFN-2X2.5-LF
4-DFN-2X2.5-LF
4-DFN-2X2.5-LF
4-DFN-2X2.5-LF
4-DFN-2X2.5-LF
4-DFN-2X2.5-LF
4-DFN-3.2X4.0
4-DFN-3.2X4.0
4-DFN-5X7-LF
4-DFN-5X7-LF
4-DFN-5X7-LF
4-DFN-5X7-LF
4-DFN-5X7-LF
6-CLCC-5X7-LF
8-LGA-10x12.5-LF
8-LGA-10x12.5-LF
8-LGA-10x12.5-LF
8-SOIC-150-LF
8-SOIC-150-LF
8-SOIC-150-LF
8-TSSOP-173-LF
8-TSSOP-173-LF
8-TSSOP-173-LF
8-TSSOP-173-LF
8-TSSOP-173-LF
8-TSSOP-173-LF
10-DFN-2.0x2.5-LF
10-DFN-2.0x2.5-LF
10-DFN-2.0x2.5-LF
10-DFN-2.0x2.5-LF
10-DFN-2.0x2.5-LF
10-DFN-2.0x2.5-LF
10-OLGA-2.85x4.90-LF
10-OLGA-2.85x4.90-LF
10-OLGA-2.85x4.90-LF
10-OLGA-2.85x4.90-LF
10-OLGA-2.85x4.90-LF
10-OLGA-2.85x4.90-LF
10-OLGA-2.85x4.90-LF
10-OLGA-2.85x4.90-LF
10-OLGA-2.85x4.90-LF
10-OLGA-2.85x4.90-LF
10-SDFN-3x3-LF
10-SDFN-3x3-LF
10-SDFN-3x3-LF
10-SDFN-3x3-LF
10-SDFN-3x3-LF
13-Jun-14
24-Jun-14
22-Jul-14
22-Jul-14
22-Jul-14
23-Jul-14
23-Jul-14
23-Jul-14
03-Feb-14
20-Feb-14
09-Jun-14
09-Jun-14
09-Jun-14
09-Jun-14
16-Sep-14
26-Mar-14
18-Oct-13
18-Oct-13
07-May-14
21-May-14
22-May-14
22-May-14
12-May-14
12-May-14
12-May-14
18-Aug-14
18-Aug-14
18-Aug-14
22-Aug-14
22-Aug-14
22-Aug-14
03-Sep-14
03-Sep-14
03-Sep-14
06-Nov-13
22-Nov-13
10-Jan-14
07-Feb-14
09-May-14
09-May-14
09-May-14
09-Jun-14
09-Jun-14
09-Jun-14
11-Nov-13
26-Nov-13
21-Dec-13
21-Dec-13
21-Dec-13
29
30
26
27
27
27
27
27
80
30
30
30
30
30
30
25
80
80
80
77
77
77
25
25
25
30
30
30
30
30
30
50
50
50
30
30
30
30
30
30
30
30
30
30
80
77
78
79
80
700
96
96
96
96
700
700
700
700
96
96
700
96
700
96
700
96
500
500
500
500
500
500
500
500
500
500
500
96
96
96
500
500
500
1500
1000
1500
1000
1500
1500
1500
1000
1000
1000
500
96
96
96
500
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs.
Pg. 59/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
QLotNum
Stress
PkgType
Read Date
Sample Size
Read Point
Fails
Q034861
Q034860
Q034859
Q034858
Q035060
Q035059
Q035058
Q035057
Q034972
Q034924
Q034925
Q035115
Q035114
Q035873
Q035872
Q035871
Q035281
Q035280
Q035279
Q035240
Q035239
Q035238
Q035237
Q035236
Q035032
Q035031
Q035235
Q035030
Q035590
Q035589
Q035591
Q035594
Q034733
Q034732
Q034731
Q034728
Q034738
Q034737
Q034736
Q034734
Q034730
Q034802
Q035532
Q035531
Q035530
Q035535
Q035534
Q035533
Q035217
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
HAST
HAST
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
HAST
Temp Cycle
UHAST
UHAST
Temp Cycle
UHAST
Temp Cycle
HAST
HAST
UHAST
HAST
Temp Cycle
LTSL
HAST
UHAST
UHAST
HAST
Temp Cycle
HAST
UHAST
Temp Cycle
Temp Cycle
HAST
Temp Cycle
Temp Cycle
Temp Cycle
UHAST
UHAST
UHAST
Temp Cycle
16-SOIC-150-LF
16-SOIC-150-LF
16-SOIC-150-LF
16-SOIC-150-LF
16-SOIC-150-LF
16-SOIC-150-LF
16-SOIC-150-LF
16-SOIC-150-LF
16-SOIC-300-LF
16-SSOP-150-LF
16-SSOP-150-LF
16-SSOP-150-LF
16-SSOP-150-LF
16-TSSOP-4.4-LF
16-TSSOP-4.4-LF
16-TSSOP-4.4-LF
20-QFN-3X3-LF
20-QFN-3X3-LF
20-QFN-3X3-LF
20-QFN-4X4-LF
20-QFN-4X4-LF
20-QFN-4X4-LF
20-QFN-4X4-LF
20-QFN-4X4-LF
20-QFN-4X4-LF
20-QFN-4X4-LF
20-QFN-4X4-LF
20-QFN-4X4-LF
24-QFN-3x3-LF
24-QFN-3x3-LF
24-QFN-3x3-LF
24-QFN-3x3-LF
24-SQFN-4x4-LF
24-SQFN-4x4-LF
24-SQFN-4x4-LF
24-SQFN-4x4-LF
24-SQFN-4x4-LF
24-SQFN-4x4-LF
24-SQFN-4x4-LF
24-SQFN-4x4-LF
24-SQFN-4x4-LF
28-QFN-4X4-LF
28-QFN-4X4-LF
28-QFN-4X4-LF
28-QFN-4X4-LF
28-QFN-4X4-LF
28-QFN-4X4-LF
28-QFN-4X4-LF
32-QFN-5X5-LF
18-Oct-13
18-Oct-13
18-Oct-13
18-Oct-13
21-Oct-13
21-Oct-13
21-Oct-13
21-Oct-13
10-Dec-13
10-Dec-13
20-Dec-13
11-Feb-14
18-Feb-14
09-Sep-14
09-Sep-14
09-Sep-14
13-Mar-14
13-Mar-14
13-Mar-14
27-Feb-14
27-Feb-14
27-Feb-14
27-Feb-14
27-Feb-14
27-Feb-14
27-Feb-14
04-Mar-14
18-Mar-14
21-May-14
21-May-14
22-May-14
27-Jun-14
10-Oct-13
10-Oct-13
10-Oct-13
18-Oct-13
13-Dec-13
13-Dec-13
13-Dec-13
13-Dec-13
13-Dec-13
30-Oct-13
27-Feb-14
27-Feb-14
27-Feb-14
23-Apr-14
23-Apr-14
23-Apr-14
30-Apr-14
72
72
72
72
72
72
72
72
80
80
80
80
80
30
30
30
90
90
90
79
80
80
80
80
80
80
80
80
25
80
25
22
77
80
80
80
79
79
80
80
80
80
22
22
22
22
22
22
30
500
500
500
500
500
500
500
500
500
500
96
96
500
500
500
500
500
500
500
96
500
96
96
500
96
500
96
96
96
96
500
1000
96
96
96
96
500
96
96
500
500
96
500
500
500
96
96
96
500
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs.
Pg. 60/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
QLotNum
Stress
PkgType
Read Date
Sample Size
Read Point
Fails
Q035215
Q035213
Q034588
Q034587
Q034586
Q034582
Q034581
Q034580
Q034594
Q034593
Q034748
Q034779
Q034784
Q034794
Q034970
Q034969
Q035884
Q035961
Q034652
Q034654
Q034653
Q034690
Q034642
Q034687
Q034675
Q034799
Q034803
Q034805
Q034865
Q034864
Q034946
Q034689
Q034974
Q034764
Q034763
Q034762
Q034806
Q034783
Q034782
Q034781
Q036055
Q036054
Q036057
Q036056
Q036060
Q036061
Q036158
Q036159
Q036160
Temp Cycle
Temp Cycle
UHAST
UHAST
UHAST
HAST
HAST
HAST
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
HAST
HAST
Temp Cycle
Temp Cycle
Temp Cycle
UHAST
HAST
HAST
HAST
UHAST
Temp Cycle
UHAST
Temp Cycle
Temp Cycle
HAST
HAST
HAST
LTSL
LTSL
LTSL
HAST
LTSL
LTSL
LTSL
UHAST
UHAST
Temp Cycle
Temp Cycle
HAST
HAST
UHAST
HAST
Temp Cycle
32-QFN-5X5-LF
32-QFN-5X5-LF
32-VQFN-S-6x6
32-VQFN-S-6x6
32-VQFN-S-6x6
32-VQFN-S-6x6
32-VQFN-S-6x6
32-VQFN-S-6x6
32-VQFN-S-6x6
32-VQFN-S-6x6
36-QFN-5X6-LF
36-QFN-5X6-LF
36-QFN-5X6-LF
42-LGA-5X7-LF
42-LGA-5X7-LF
42-LGA-5X7-LF
42-LGA-5X7-LF
42-LGA-5X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
48-QFN-7X7-LF
30-Apr-14
30-Apr-14
26-Nov-13
26-Nov-13
26-Nov-13
04-Dec-13
04-Dec-13
04-Dec-13
15-Jan-14
15-Jan-14
15-Oct-13
17-Oct-13
18-Oct-13
23-Oct-13
02-Dec-13
02-Dec-13
20-Jul-14
01-Aug-14
01-Oct-13
02-Oct-13
02-Oct-13
03-Oct-13
08-Oct-13
09-Oct-13
10-Oct-13
18-Oct-13
25-Oct-13
28-Oct-13
29-Oct-13
29-Oct-13
21-Nov-13
27-Nov-13
02-Dec-13
08-Dec-13
08-Dec-13
08-Dec-13
23-Dec-13
05-Jan-14
05-Jan-14
05-Jan-14
01-Aug-14
01-Aug-14
08-Aug-14
08-Aug-14
13-Aug-14
14-Aug-14
29-Aug-14
03-Sep-14
04-Sep-14
30
30
30
30
30
25
25
25
30
30
30
30
30
28
29
30
30
30
81
78
80
81
26
78
27
25
27
31
25
25
30
78
29
85
86
84
26
80
81
80
25
25
25
25
25
25
25
25
25
500
500
96
96
96
96
96
96
1000
1000
500
500
500
500
500
500
264
264
500
500
500
192
96
96
96
96
500
96
500
500
96
96
96
1000
1000
1000
96
2000
2000
2000
96
96
500
500
96
96
96
96
500
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs.
Pg. 61/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
QLotNum
Stress
PkgType
Read Date
Sample Size
Read Point
Fails
Q036186
Q036185
Q034585
Q034583
Q034584
Q034579
Q034578
Q034577
Q034591
Q034589
Q034590
Q034635
Q034817
Q034814
Q034823
Q034822
Q034815
Q034832
Q034830
Q034831
Q034821
Q034825
Q034835
Q035022
Q034945
Q035623
Q035624
Q035805
Q035893
Q035891
Q035890
Q035932
Q035931
Q035934
Q034694
Q034695
Q035157
Q035159
Q035158
Q035162
Q035161
Q035160
Q035016
Q035013
Q035010
Q035747
Q035746
Q035745
Q035817
THB
THB
UHAST
UHAST
UHAST
HAST
HAST
HAST
Temp Cycle
Temp Cycle
Temp Cycle
LTSL
UHAST
HAST
Temp Cycle
UHAST
Temp Cycle
Temp Cycle
HAST
UHAST
HAST
LTSL
LTSL
HAST
LTSL
UHAST
Temp Cycle
HAST
UHAST
HAST
Temp Cycle
UHAST
Temp Cycle
HAST
HAST
Temp Cycle
HAST
HAST
HAST
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
UHAST
UHAST
UHAST
HAST
48-QFN-7X7-LF
48-QFN-7X7-LF
48-TQFP-7x7
48-TQFP-7x7
48-TQFP-7x7
48-TQFP-7x7
48-TQFP-7x7
48-TQFP-7x7
48-TQFP-7x7
48-TQFP-7x7
48-TQFP-7x7
52-LGA-6x8-LF
52-LGA-6x8-LF
52-LGA-6x8-LF
52-LGA-6x8-LF
52-LGA-6x8-LF
52-LGA-6x8-LF
52-LGA-6x8-LF
52-LGA-6x8-LF
52-LGA-6x8-LF
52-LGA-6x8-LF
52-LGA-6x8-LF
52-LGA-6x8-LF
52-LGA-6x8-LF
52-LGA-6x8-LF
56-LGA-8x8-LF
56-LGA-8x8-LF
56-LGA-8x8-LF
56-LGA-8x8-LF
56-LGA-8x8-LF
56-LGA-8x8-LF
56-LGA-8x8-LF
56-LGA-8x8-LF
56-LGA-8x8-LF
56-QFN-8X8-LF
56-QFN-8X8-LF
56-QFN-8X8-LF
56-QFN-8X8-LF
56-QFN-8X8-LF
56-QFN-8X8-LF
56-QFN-8X8-LF
56-QFN-8X8-LF
60-LGA-8X8-LF
60-LGA-8X8-LF
60-LGA-8X8-LF
60-LGA-8X8-LF
60-LGA-8X8-LF
60-LGA-8X8-LF
60-LGA-8X8-LF
10-Sep-14
10-Sep-14
07-Jan-14
07-Jan-14
21-Jan-14
27-Jan-14
27-Jan-14
27-Jan-14
22-Feb-14
22-Feb-14
25-Feb-14
18-Oct-13
29-Oct-13
29-Oct-13
30-Oct-13
30-Oct-13
30-Oct-13
01-Nov-13
04-Nov-13
05-Nov-13
22-Nov-13
04-Dec-13
05-Dec-13
13-Dec-13
06-Jan-14
29-May-14
26-Jun-14
01-Jul-14
21-Jul-14
21-Jul-14
21-Jul-14
31-Jul-14
31-Jul-14
14-Aug-14
03-Oct-13
09-Oct-13
10-Feb-14
11-Feb-14
11-Feb-14
18-Feb-14
18-Feb-14
18-Feb-14
12-Dec-13
12-Dec-13
12-Dec-13
23-Jun-14
23-Jun-14
23-Jun-14
07-Jul-14
25
25
30
30
30
26
27
27
30
30
30
30
26
78
30
30
26
30
79
30
80
30
30
30
30
15
25
25
15
25
25
15
25
25
26
26
27
27
26
27
27
27
30
30
30
30
30
29
28
1000
1000
96
96
96
96
96
96
1000
1000
1000
1000
96
96
500
96
500
500
96
96
96
1000
1000
96
1000
96
1000
96
96
96
1000
96
1000
96
96
1000
96
96
96
500
500
500
500
500
500
96
96
96
96
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs.
Pg. 62/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
QLotNum
Stress
PkgType
Read Date
Sample Size
Read Point
Fails
Q035883
Q035882
Q035749
Q035780
Q034899
Q034608
Q034897
Q034607
Q034900
Q034609
Q034904
Q034616
Q034903
Q034615
Q034905
Q034617
Q036049
Q036048
Q036047
Q036046
Q036045
Q036044
Q036052
Q036051
Q036050
Q034839
Q034838
Q034853
Q034852
Q034942
Q034941
Q034940
Q034973
Q034992
Q034991
Q034990
Q034989
Q035123
Q035122
Q035075
Q035074
Q035073
Q035066
Q035072
Q035071
Q035070
Q035069
Q035067
Q035184
HAST
HAST
Temp Cycle
HAST
UHAST
UHAST
HAST
HAST
Temp Cycle
Temp Cycle
UHAST
UHAST
HAST
HAST
Temp Cycle
Temp Cycle
UHAST
UHAST
UHAST
Temp Cycle
Temp Cycle
Temp Cycle
HAST
HAST
HAST
UHAST
UHAST
Temp Cycle
Temp Cycle
HAST
HAST
UHAST
Temp Cycle
THB
THB
LTSL
LTSL
THB
LTSL
UHAST
UHAST
UHAST
HAST
Temp Cycle
Temp Cycle
Temp Cycle
HAST
HAST
THB
60-LGA-8X8-LF
60-LGA-8X8-LF
64-QFN-9X9-LF
64-QFN-9X9-LF
64-TQFP-10x10
64-TQFP-10x10
64-TQFP-10x10
64-TQFP-10x10
64-TQFP-10x10
64-TQFP-10x10
64-VQFN-S-9x9
64-VQFN-S-9x9
64-VQFN-S-9x9
64-VQFN-S-9x9
64-VQFN-S-9x9
64-VQFN-S-9x9
64-VQFN-S-9x9
64-VQFN-S-9x9
64-VQFN-S-9x9
64-VQFN-S-9x9
64-VQFN-S-9x9
64-VQFN-S-9x9
64-VQFN-S-9x9
64-VQFN-S-9x9
64-VQFN-S-9x9
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
20-Jul-14
20-Jul-14
23-Jun-14
07-Jul-14
03-Jan-14
03-Jan-14
30-Jan-14
30-Jan-14
08-Feb-14
08-Feb-14
20-Dec-13
20-Dec-13
28-Jan-14
28-Jan-14
04-Feb-14
04-Feb-14
22-Aug-14
22-Aug-14
22-Aug-14
03-Sep-14
03-Sep-14
03-Sep-14
18-Sep-14
18-Sep-14
18-Sep-14
24-Oct-13
24-Oct-13
28-Oct-13
28-Oct-13
07-Nov-13
07-Nov-13
07-Nov-13
14-Nov-13
28-Nov-13
28-Nov-13
28-Nov-13
28-Nov-13
12-Dec-13
12-Dec-13
23-Dec-13
23-Dec-13
23-Dec-13
24-Dec-13
30-Dec-13
30-Dec-13
30-Dec-13
30-Dec-13
30-Dec-13
29-Jan-14
28
28
27
27
30
29
30
30
30
30
30
30
29
30
30
30
30
30
30
30
30
30
30
30
30
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
21
25
25
264
264
500
96
96
96
96
96
1000
1000
96
96
96
96
1000
1000
96
96
96
500
500
500
96
96
96
96
96
500
500
96
96
96
500
1000
1000
1000
1000
1000
1000
96
96
96
96
500
500
500
96
96
1000
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs.
Pg. 63/65
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TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
QLotNum
Stress
PkgType
Read Date
Sample Size
Read Point
Fails
Q035183
Q035182
Q035181
Q035180
Q035179
Q035523
Q035522
Q036162
Q036161
Q036164
Q036163
Q035326
Q035325
Q035324
Q035337
Q035336
Q035335
Q033979
Q033978
Q035657
Q035985
Q035984
Q035958
Q034909
Q034612
Q034908
Q034611
Q034910
Q034613
Q034891
Q034884
Q034883
Q034892
Q034890
Q034882
Q035130
THB
THB
LTSL
LTSL
LTSL
HAST
HAST
HAST
HAST
UHAST
UHAST
Temp Cycle
Temp Cycle
Temp Cycle
HAST
HAST
HAST
Temp Cycle
Temp Cycle
Temp Cycle
Temp Cycle
HAST
Temp Cycle
UHAST
UHAST
HAST
HAST
Temp Cycle
Temp Cycle
UHAST
Temp Cycle
UHAST
Temp Cycle
HAST
HAST
UHAST
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
68-QFN-8X8-LF
72-QFN-10X10-LF
72-QFN-10X10-LF
72-QFN-10X10-LF
72-QFN-10X10-LF
72-QFN-10X10-LF
72-QFN-10X10-LF
80-TQFP-12X12-LF
80-TQFP-12X12-LF
80-TQFP-12X12-LF
81-WLCSP-EFM32WG Ern
81-WLCSP-EFM32WG Ern
85-LGA-6X8-LF
100-LQFP-14x14
100-LQFP-14x14
100-LQFP-14x14
100-LQFP-14x14
100-LQFP-14x14
100-LQFP-14x14
112-LFBGA-10x10
112-LFBGA-10x10
112-LFBGA-10x10
112-LFBGA-10x10
112-LFBGA-10x10
112-LFBGA-10x10
120-VFBGA-7x7
29-Jan-14
29-Jan-14
29-Jan-14
29-Jan-14
29-Jan-14
20-Mar-14
20-Mar-14
03-Sep-14
03-Sep-14
04-Sep-14
04-Sep-14
20-May-14
20-May-14
20-May-14
25-Jun-14
25-Jun-14
25-Jun-14
27-Jan-14
28-Jan-14
12-Jun-14
01-Aug-14
21-Aug-14
28-Jul-14
19-Jan-14
19-Jan-14
28-Jan-14
28-Jan-14
22-Feb-14
22-Feb-14
07-Jan-14
10-Jan-14
15-Jan-14
04-Feb-14
05-Feb-14
05-Feb-14
24-May-14
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
110
110
30
27
25
100
30
30
28
30
30
30
30
25
30
29
27
29
150
1000
1000
1000
1000
1000
96
96
96
96
96
96
500
500
500
96
96
96
500
500
500
500
96
500
96
96
96
96
1000
1000
264
500
264
1000
264
264
264
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs.
Pg. 64/65
Silicon Laboratories
TITLE
Quarterly Quality & Reliability Report
Doc ID
14Q3_QR_Report-01
Revision History
Rev No
01
Description
Original
All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs.
Effective Date
17-Oct-2014
Pg. 65/65

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