Manufacturing Main Results in 2013 http://cmp.imag.fr CMP annual users meeting, 23 January 2014, PARIS Technology Processes in 2013 AMS IC : STMicroelectronics 0.35 µ CMOS / CMOS-Opto 0.35 µ SiGe 0.35 µ HV CMOS 0.35 µ HV CMOS EEPROM 28nm CMOS 10LM 40nm CMOS 7LM 65nm CMOS 7LM 130nm CMOS 6LM 130nm HV-CMOS 4LM Tezzaron / GlobalFoundries CMP / AMS MEMS : MEMSCAP STMicroelectronics 0.18 µ HV CMOS 28nm FDSOI 65nm SOI 130nm SOI 130nm SiGe BiCMOS 0.15 µ GaAS D-mode pHEMT TriQuint 3D-IC : 0.18 µ CMOS 2 Tiers 3D-IC / 130nm CMOS 0.35 µ CMOS front-side bulk micromachining PolyMUMPS MetalMUMPS SOI-MUMPS THELMA CMP annual users meeting, 23 January 2014, PARIS 2 2013 : Main Results 266 Circuits 85 Institutions = 266 Circuits in 2012 85 Institutions in 2012 In 2013 In 2012 Prototypes 255 Circuits 84 Institutions 263 Circuits 84 Institutions Low Volume Prods 64 Circuits 26 Institutions 52 Circuits 22 Institutions Industrial circuits 71 Circuits 22 Institutions 62 Circuits 20 Institutions CMP annual users meeting, 23 January 2014, PARIS 3 Circuits per foundry in 2013 0.4% 1.1% 39.1% 59.4% CMP annual users meeting, 23 January 2014, PARIS 4 Circuits per foundry CMP annual users meeting, 23 January 2014, PARIS 5 Circuits per technology in 2013 CMP annual users meeting, 23 January 2014, PARIS 6 Circuits per technology CMP annual users meeting, 23 January 2014, PARIS 7 Circuits E - R - I in 2013 CMP annual users meeting, 23 January 2014, PARIS 8 Circuits E - R - I CMP annual users meeting, 23 January 2014, PARIS 9 Circuits per country CMP annual users meeting, 23 January 2014, PARIS 10 Circuits per geographical area CMP annual users meeting, 23 January 2014, PARIS 11 Number of Circuits CMP annual users meeting, 23 January 2014, PARIS 12 Non academic Centers in 2013 CEA-Saclay GIF SUR YVETTE FRANCE OMEGA – IN2P3 PALAISEAU FRANCE C-DAC Kerala INDIA Acreo AB NORRKOPING SWEDEN INSTITUT DE PHYSIQUE NUCLEAIRE Villeurbanne cedex FRANCE INVIA MEYREUIL FRANCE IPHC / IN2P3 STRASBOURG FRANCE Dolphin Integration Meylan FRANCE Fraunhofer Institut fuer Integrierte Schaltungen IIS ERLANGEN GERMANY LETI/CEA Grenoble Grenoble FRANCE LPSC Grenoble FRANCE NEURELEC Vallauris FRANCE NIPSON Belfort FRANCE Freemems St Martin d’Hères FRANCE Siliconsortium Ltd. Hyogo JAPAN Krakow Design Consultants Kraków POLAND Si-Ware systems Heliopolis Cairo EGYPT Thalès SA Elancourt FRANCE ValpTek Montbonnot FRANCE LPC / IN2P3 AUBIERE FRANCE Weeroc SAS ORSAY FRANCE Robert Bosch GmbH REUTLINGEN GERMANY CMP annual users meeting, 23 January 2014, PARIS 22 Centres in 2013 21 Centres in 2012 13 Low Volume Productions in 2013 CHINESE UNIVERSITY OF HONG KONG CHINESE UNIVERSITY OF HONG KONG NANYANG TECHNOLOGICAL UNIVERSITY Siliconsortium ltd. Jaypee institute of information technology Siliconsortium ltd. CEA-Saclay IMS MOSIS MOSIS MOSIS MOSIS MOSIS MOSIS MOSIS MOSIS MOSIS MOSIS MOSIS MOSIS MOSIS Siliconsortium ltd. Centre Microélectronique de Provence - Georges Charpak INVIA INVIA Stanford University CMC Microsystems University of Michigan NANYANG TECHNOLOGICAL UNIVERSITY Siliconsortium ltd. University of Texas at Dallas 30 30 31 33 35 35 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 50 50 50 50 50 50 50 50 50 University of Texas at Dallas Hong Kong University of Science & Technology University of Washington Chalmers University of Technology MOSIS LPC – IN2P3 Clermont Siliconsortium ltd. LPC – IN2P3 Clermont Thalès SA OMEGA – IN2P3 Thalès SA Thalès SA Thalès SA University of Michigan LETI/CEA Grenoble LETI/CEA Grenoble CEA-Saclay CEA-Saclay CEA-Saclay CEA-Saclay ENSEA CEA-Saclay Si-Ware systems LETI/CEA Grenoble CEA-Saclay Thalès SA CALTECH ANR-DIPMEM Consortium LETI/CEA Grenoble LETI/CEA Grenoble LETI/CEA Grenoble IPHC –Strasbourg / LBNL NIPSON Technologies • Low volume productions available in MPW runs. • From tens to some hundreds or thousands parts. CMP annual users meeting, 23 January 2014, PARIS 50 50 50 50 50 60 60 65 75 90 100 100 100 100 100 250 372 372 372 372 699 744 1000 1000 1860 2000 1 wafer 5 wafers 6 wafers 6 wafers 6 wafers 100 wafers 210000 14 Low Volume Productions in 2013 Dedicated production runs : IPHC - Strasbourg / LBNL 100 wafers 8" (0.35um CMOS) (Prod. wafers) CEA-Saclay 9 wafers 8" (0.35um CMOS) CEA-Saclay 18 wafers 8" (0.35um CMOS) NIPSON 12 wafers 8" (0.8um BiCMOS) LETI-CEA Grenoble 6 wafers 8" (0.35um CMOS) LETI-CEA Grenoble 6 wafers 8" (0.35um CMOS) LETI-CEA Grenoble 25 wafers 8" (0.35um CMOS) (Prod. wafers) Dedicated production runs of 6, 12, 18, or 25 wafers. Up to 300 wafers per project per year can be ordered through CMP. CMP annual users meeting, 23 January 2014, PARIS 15 Example of prices, prototyping CMOS .35 μ AMS 650 €/mm2 CMOS opto .35 μ AMS 810 €/mm2 CMOS HV .35 μ AMS 1000 €/mm2 CMOS 130nm ST 2200 €/mm2 CMOS 65 nm ST 7500 €/mm2 CMOS 40 nm ST 10000 €/mm2 FDSOI 28 nm ST 15000 €/mm2 SiGe BiCMOS .35 μ AMS SiGe:C BiCMOS 130nm ST 3500 €/mm2 SOI 130nm ST 3000 €/mm2 Poly-SOI-Metal MUMPS MEMSCAP 3D-IC 130nm Tezzaron CMP annual users meeting, 23 January 2014, PARIS 890 €/mm2 3700 €/cm2 1500 €/mm2 16 Cycle time CMOS 11 weeks HV CMOS 12 weeks SiGe BiCMOS 13 weeks Advanced CMOS 16 - 20 weeks Including : 1-2 weeks data preparation 2-3 weeks wafer dicing and packaging CMP annual users meeting, 23 January 2014, PARIS 17 Technology Processes in 2014 0.35 µ CMOS / CMOS-Opto 0.35 µ SiGe 0.35 µ HV CMOS 0.35 µ HV CMOS EEPROM AMS 0.18 µ CMOS 0.18 µ HV CMOS IC : 65nm CMOS 7LM STMicroelectronics 28nm FDSOI 130nm CMOS 6LM 130nm HV-CMOS 4LM 3D-IC : MEMS : Tezzaron / GlobalFoundries 130nm SiGe BiCMOS 130nm SOI (FEM) 2 Tiers 3D-IC / 130nm CMOS CMP / AMS 0.35 µ CMOS front-side bulk micromachining AMS 0.35 µ CMOS backside bulk micromachining MEMSCAP PolyMUMPS STMicroelectronics Teledyne-DALSA SOIMUMPS PiezoMUMPS MetalMUMPS THELMA MIDIS CMP annual users meeting, 23 January 2014, PARIS 18
© Copyright 2024 ExpyDoc
