EFFECT OF PARASITIC RLC PARAMETERS IN GSM BAND AMPLIFIER ON TRANSMISSION COEFFICIENT Introduction EMC Studio/EMCoS PCB VLab This application demonstrates effect of parasitic RLC parameters on forward transmission coefficient (S21) in GSM band Signal Amplifier. Simulations are performed in EMCoS PCB VLab and EMC Studio. Parasitic effects are considered separately for all conductive traces along main signal path. This realistic model is compared to ideal case when wires only connect functional elements in equivalent circuit and do not affect design performance. Measurement Setup Measurements were performed in EMCoS laboratory. Equivalent Circuit of Signal Amplifier L3 C6 22e-9 R3 22e-6 R4 110 C5 22e-22 110 C7 Port 1 C1 C4 R1 22e-9 22k 3.3p I1 C2 560 3.3e-12 Signal Amplifier 22e-9 Port 2 C8 R6 22k Q5 V1 9 L2 22e-9 R2 C9 22e-9 22e-22 L1 BFG540/X/PLP 1 0 39e-12 C3 22e-9 Q6 R 10 R9 R7 10 10 50 BFG540/X/PLP R8 120 Port 2 Port 1 BFG540/X/PLP transistors included in Amplifier circuit are modeled in System Simulation model as Touchstone devices defined from manufacturer’s s-parameters datasheet (as *.snp files). Simulation Model Description Calculation of parasitic RLC elements and generation of equivalent circuit are performed in EMCoS PCB VLab environment. PCB model of signal amplifier is obtained from ODB++ format and parasitic L and C coefficients are calculated for each conductive path. Each pair of ports on the figure represents a part of conductive path which is then translated to parasitic sub-circuit. Totally 21 parasitic subcircuits are obtained for complete conductive path. Generated parasitic circuits are integrated in amplifier equivalent model for system simulation analysis in EMC Studio. EMCoS PCB VLab Model of Signal Amplifier for Parasitic RLC Calculations along Conductive Paths 1 2 5 3 6 4 7 9 8 10 11 12 13 14 17 16 15 18 19 Integration of Parasitic Sub-circuits in Amplifier Equivalent Model .SUBCKT 14 pin_Port_1_in pin_Port_1_out L1_1a pin_Port_1_in p1_1_3 1.86851380E-11 C1_1 p1_1_3 0 8.27958287E-15 L1_1b p1_1_3 p1_2_1 1.86851380E-11 L1_2a p1_2_1 p1_2_3 1.86851380E-11 C1_2 p1_2_3 0 8.27958287E-15 L1_2b p1_2_3 p1_3_1 1.86851380E-11 L1_3a p1_3_1 p1_3_3 1.86851380E-11 Parasitic Sub-circuit 1 (Port 1 - 1st Part of Conductive Path) .SUBCKT 1 pin_Port_1_in pin_Port_1_out L1_1a pin_Port_1_in p1_1_3 4.96532890E-11 C1_1 p1_1_3 0 9.35144347E-15 L1_1b p1_1_3 p1_2_1 4.96532890E-11 L1_2a p1_2_1 p1_2_3 4.96532890E-11 C1_2 p1_2_3 0 9.35144347E-15 L1_2b p1_2_3 p1_3_1 4.96532890E-11 L1_3a p1_3_1 p1_3_3 4.96532890E-11 EMCoS Ltd. 27 Pekin Street, Tbilisi, 0160, Georgia Phone: +995-32-2389091 E-mail: [email protected] www.emcos.com Measurement Setup Measurement setup and equivalent circuit for Signal Amplifier (GSM Band) are shown below. C1 Parasitic Sub-circuit 14 (Port 14 - 14th Part of Conductive Path) C4 R1 22e-9 22k 3.3p I1 1 0 EMC Studio/EMCoS PCB VLab Application Note: #17 20 21 EFFECT OF PARASITIC RLC PARAMETERS IN GSM BAND AMPLIFIER ON TRANSMISSION COEFFICIENT System simulation model for Signal Amplifier with included parasitic sub-circuits is shown below (devices colored in grey represent parasitic sub-circuits and red color devices - transistor models defined from manufacturer’s s-parameters datasheet): EMC Studio System Simulation Model of Signal Amplifier with Included Parasitic Sub-circuits 3 pin_port_1_out pin_port_1_in BFG540_1 2 Port1_plus PIN2 Net1 Port2_plus Net2 PIN1 Net3 Port1_minus Net1 Net2 Port2_minus PIN3 Net4 Net3 pin_port_1_out PIN18 pin_port_1_out pin_port_1_in pin_port_1_out pin_port_1_in pin_port_1_out pin_port_1_in pin_port_1_out pin_port_1_in pin_port_1_out pin_port_1_in Net18 PIN17 Net1 Net17 pin_port_1_out PIN16 Net2 Net16 pin_port_1_in PIN15 17 pin_port_1_out pin_port_1_in Net1 Net2 Net1 Net2 Net1 Net2 Net1 Net2 Net1 Net2 Net1 Net2 Net1 PIN42 PIN41 PIN19 PIN20 PIN21 PIN22 PIN23 PIN24 PIN25 PIN26 PIN27 PIN28 PIN29 PIN30 PIN31 PIN32 Net42 Net41 Net19 Net20 Net21 Net22 Net23 Net24 Net25 Net26 Net27 Net28 Net29 Net30 Net31 Net32 PIN33 C4 L11 R11 0.1e-9 3.8 Net2 PIN34 pin_port_1_in Net34 Net1 C12 12.5e-12 PIN35 pin_port_1_out Net35 Net2 L3 PIN36 pin_port_1_in 33e-9 Net36 Net1 PIN37 pin_port_1_out L2 R7 110 22e-9 22e-6 33e-9 R12 22e3 560 C5 22e3 3.3e-12 C9 C6 3.3e-12 R1 22e-9 R5 L7 560 0.2e-9 39e-12 P1 R9 10 10 Net15 P2 R10 120 Port1_plus PIN5 Net1 Port2_plus Net5 PIN4 L6 L8 0.5e-9 Net3 Net4 Port1_minus PIN6 Net2 Port2_minus Net6 BFG540_2 Net4 19 22e-9 R4 22e-9 C2 22e-9 C7 22e-9 18 C8 R6 110 C3 L10 0.5e-9 pin_port_1_out Net33 AMP5 R8 Net1 pin_port_1_out pin_port_1_in Net2 L1 Net2 pin_port_1_in 9 13 Net1 0.2e-9 C10 Net37 Net2 PIN38 pin_port_1_in Net38 Net1 PIN39 pin_port_1_out Net39 Net2 PIN40 pin_port_1_in Net40 Net1 20 21 12.5e-12 L4 R2 0.1e-9 3.7 PIN8 PIN7 PIN12 PIN11 PIN13 PIN14 PIN43 PIN44 PIN45 PIN46 PIN47 PIN48 PIN9 PIN10 Net8 Net7 Net12 Net11 Net13 Net14 Net43 Net44 Net45 Net46 Net47 Net48 Net9 Net10 pin_port_1_in pin_port_1_out Net1 12 Net2 pin_port_1_inpin_port_1_out Net1 pin_port_1_inpin_port_1_out Net2 7 Net1 pin_port_1_inpin_port_1_out Net2 Net1 5 6 Results 26 Simulation results for both ideal and realistic models of Signal Amplifier are compared to measurements. Realistic model of Signal Amplifier with parasitic effects gives better agreement with measurements. Net2 pin_port_1_inpin_port_1_out Net1 8 Net2 pin_port_1_in pin_port_1_out Net1 15 Net2 pin_port_1_in pin_port_1_out Net1 Net2 14 Transmission Coefficient 24 22 Conclusions Rapid RLC solver included into EMCoS PCB VLab provides parasitic RLC extraction and generation of equivalent circuit for analysis of parasitic effects on PCB Generated parasitic circuit can be used further in EMC Studio system simulation analysis Realistic model of amplifier with parasitic sub-circuits gives better agreement with measurements then ideal model EMCoS Ltd. 27 Pekin Street, Tbilisi, 0160, Georgia Phone: +995-32-2389091 E-mail: [email protected] www.emcos.com 16 11 Net2 C1 1 10 EMC Studio/EMCoS PCB VLab Application Note: #17 S21 [dB] EMC Studio/EMCoS PCB VLab 4 20 18 16 14 12 0.5 Measurements Simulations - Ideal Model Simulations - Model with Parasitic Elements 1 1.5 Frequency [GHz] 2
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