DSI45-16A

DSI45-16A
final for release
V RRM =
I FAV =
VF =
Standard Rectifier
Single Diode
1600 V
45 A
1.23 V
Part number
DSI45-16A
3
1
Backside: cathode
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
● Housing: TO-247
Conditions
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
Ratings
Symbol
Definition
VRRM
max. repetitive reverse voltage
IR
reverse current
VF
forward voltage
I FAV
average forward current
VF0
threshold voltage
min.
slope resistance
RthJC
thermal resistance junction to case
T VJ
virtual junction temperature
Ptot
total power dissipation
I FSM
max. forward surge current
VR = 1600 V
20
µA
TVJ = 150 °C
3
mA
TVJ = 25 °C
IF =
45 A
IF =
90 A
IF =
45 A
IF =
90 A
rectangular
TVJ = 150 °C
d = 0.5
t = 10 ms (50 Hz), sine
(60 Hz), sine
junction capacitance
1.28
V
1.37
V
1.23
V
V
TC = 130°C
45
A
TVJ = 175°C
0.81
V
9.1
mΩ
0.55
K/W
175
°C
TC = 25 °C
270
W
TVJ = 45°C
480
A
VR = 0 V
518
A
TVJ = 150°C
408
A
441
A
t = 10 ms (50 Hz), sine
TVJ = 45°C
1152
A2 s
t = 8,3 ms (60 Hz), sine
VR = 0 V
1120
A2 s
t = 10 ms (50 Hz), sine
TVJ = 150°C
832
A2 s
t = 8,3 ms (60 Hz), sine
VR = 0 V
808
A2 s
VR = 400 V; f = 1 MHz
TVJ = 25 °C
t = 8,3 ms
CJ
V
1.35
-40
t = 10 ms (50 Hz), sine
value for fusing
Unit
VR = 1600 V
t = 8,3 ms
I 2t
max.
1600
for power loss calculation only
rF
typ.
TVJ = 25 °C
TVJ = 25 °C
(60 Hz), sine
VR = 0 V
18
pF
Release: PM __________________, RD __________________, QA __________________, GM ___________________
Date:
PM __________________, RD __________________, QA __________________, GM ___________________
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20090529a
DSI45-16A
final for release
Ratings
Symbol
Definition
min.
Conditions
I RMS
RMS current
RthCH
thermal resistance case to heatsink
Tstg
storage temperature
per pin
max.
Unit
70
0.25
-55
Weight
A
K/W
150
°C
6
MD
mounting torque
FC
mounting force with clip
1)
typ.
1)
g
0.8
1.2
Nm
20
120
N
IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Product Marking
Logo
Marking on product
DateCode
Assembly Code
Ordering
Standard
abcdef
YYWW
XXXXXX
Part Name
DSI45-16A
Similar Part
DSI45-16AR
DSI45-12A
DSI45-08A
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Marking on Product
DSI45-16A
Package
ISOPLUS247 (2)
TO-247AD (2)
TO-247AD (2)
Delivering Mode
Tube
Base Qty Code Key
30
471917
Voltage class
1600
1200
800
Data according to IEC 60747and per diode unless otherwise specified
20090529a
DSI45-16A
final for release
Outlines TO-247
L
B
E
F
C
A
H
D
G
J
K
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
M
N
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32
5.4
5.49
6.2
0.170 0.216
0.212 0.244
G
H
1.65
-
2.13
4.5
0.065 0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040 0.055
0.426 0.433
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5
2.49
0.087 0.102
Data according to IEC 60747and per diode unless otherwise specified
20090529a
DSI45-16A
final for release
70
104
500
60
400
2
200
103
2
30
300
I t [A s]
40
IFSM [A]
IF [A]
50
20
100
10
0
0.0
0.4
0.8
1.2
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
0.01
0.1
1
1
t [s]
Fig. 2 Surge overload current
2
3
4 5 6 7 8 910
t [ms]
2
Fig. 3 I t versus time per diode
100
50
80
40
60
30
IF(AV)M [A]
Ptot [W]
102
0
0.001
1.6
40
20
20
10
0
0
0
10
20
30
40
0
20
40
IF(AV)M [A]
60
80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tamb [°C]
TC [°C]
Fig. 4 Power dissipation vs. direct output current & ambient temperature, sine 180°
Fig. 5 Max. forward current versus
case temperature, sine180°
ZthJC [K/W]
0.6
Constants for ZthJC calculation:
0.4
i
0.2
0.0
0.001
Rthi (K/W)
ti (s)
1 0.1633
0.016
2 0.2517
0.118
3 0.0933
0.588
4 0.04167
2.6
DSI45
0.01
0.1
1
10
t [s]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20090529a

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