7MBR75VJC120-50
IGBT Modules
Power Module (V series)
1200V / 75A / PIM
■ Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Conveter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
■ Applications
Inverter for Motor Drives
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
■ Outline drawing ( Unit : mm )
単位 ／ Unit ： mm
公差／tolerance：ISO 2768-f
STANDARD LID USE
Weight: 95g (typ.)
■ Equivalent Circuit
[ Converter ]　[ Brake]　[ Inverter ]
1
[ Temp Sensor ]
FM6M1623
2015/08
7MBR75VJC120-50
IGBT Modules
■　Absolute Maximum ratings ( at Tc= 25oC unless otherwise specified )
Inverter
Items
Symbols
Brake
Maximum
ratings
Units
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltage
VGES
±20
V
Collector current
o
Ic
Continuous
Tc=100 C
75
Icp
1ms
Tc=80oC
150
-Ic
-Ic pulse
VCES
Collector-Emitter voltage
Converter
Conditions
1ms
150
VGES
Gate-Emitter voltage
Collector current
A
75
1200
V
±20
V
IC
Continuous
Tc=80oC
75
ICP
1ms
Tc=80oC
150
A
Repetitive peak reverse voltage (Diode)
VRRM
1200
V
Repetitive peak reverse voltage
VRRM
1600
V
50Hz/60Hz, sine wave
75
A
10ms, Tj=150oC
half sine wave
490
A
1200
IO
Average output current
Surge current
2
It
Surge current
2
It
(Non-Repetitive)
IFSM
(Non-Repetitive)
2
It
(Non-Repetitive)
IFSM
(Non-Repetitive)
I2 t
Junction temperature
Tj
Operating junciton temperature
(under switching conditions)
Tjop
Case temperature
Storage temperature
Isolation
voltage
between terminal and DCB Backside (*1)
between temperature sensor and others
(*2)
Screw
torque
Mounting
700
2400
A2s
Converter
150
Inverter, Brake
150
Converter
150
175
o
Tc
125
Tstg
-40～+125
Viso
(*3)
10ms, Tj=25 C
half sine wave
Inverter, Brake
A2s
A
o
-
AC : 1min.
M4
C
2500
VAC
2.5
Nm
(*1) All terminals should be connected together during the test.
(*2) Two temp sensor terminals should be connected together, other terminals should be connected together
and shorted to DCB Backside during the test.
(*3) Recommendable value : 2.0-2.5 Nm (M4)
2
FM6M1623
2015/08
7MBR75VJC120-50
IGBT Modules
■ Electrical characteristics ( at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Inverter
Collector-Emitter
saturation voltage
Collector power disipation
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
Symbols
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Pc
Rg(int)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VGE =
VCE=
VCE =
VGE=
VCE =
IC =
VGE=
IC =
0V
1200V
0V
±20V
20V
75mA
15V
75A
VGE=
IC =
15V
75A
Brake
Reverse recovery time
Zero gate voltage
collector current
Gate-Emitter
leakage current
Collector-Emitter
saturation voltage
Collector power disipation
Internal gate resistance
Turn-on time
Converte
Turn-off time
Reverse current
trr
ICES
IGES
VCE(sat)
(terminal)
VCE(sat)
(chip)
Pc
Rg(int)
ton
tr
toff
tf
IRRM
Forward on voltage
VFM
Reverse current
IRRM
Temperature Sensor
R
o
Tj= 25 C
Tj=125oC
Tj=150oC
Tj= 25oC
Tj=125oC
Tj=150oC
1 device
VCE=10V,VGE=0V,f=1MHz
VCC = 600V
IC = 75A
VGE= ±15V
RG = 2 Ω
IF =
Tj= 25oC
Tj=125oC
Tj=150oC
Tj= 25oC
Tj=125oC
Tj=150oC
75A
Forward on voltage
VF
(chip)
Characteristics
min.
typ.
max.
Conditions
IF =
75A
IF =
VGE =
VCE=
VCE =
VGE=
VGE=
IC =
75A
0V
1200V
0V
±20V
15V
75A
VGE=
IC =
15V
75A
1 device
VCE= 600V
IC =
75A
VGE= ±15V
RG = 2 Ω
VR= 1200V
IF =
75A
VR=
T=
T=
Tj= 25oC
Tj=125oC
Tj=150oC
Tj= 25oC
Tj=125oC
Tj=150oC
terminal
chip
1600V
25oC
100oC
Im=1mA
Im=1mA
Units
-
-
1.0
mA
-
-
200
nA
6.0
6.5
7.0
V
-
2.15
2.50
2.55
1.85
2.20
2.25
260
10
6.1
0.42
0.11
0.04
0.44
0.06
2.25
2.50
2.45
1.95
2.20
2.15
-
2.60
2.30
1.20
0.60
1.00
0.30
2.70
2.40
0.35
-
-
1.0
mA
-
-
200
nA
-
2.15
2.50
2.55
1.85
2.20
2.25
260
10.0
0.42
0.11
0.44
0.06
1.55
1.25
1000
1670
2.60
2.30
1.20
0.60
1.00
0.30
1.0
1.0
-
V
W
Ω
nF
μs
V
μs
V
W
Ω
μs
mA
V
mA
Ω
■ Thermal resistance characteristics
Items
Thermal resistance(1device)
Symbols
Rth(j-c)
Conditions
Inverter / Brake IGBT
Inverter FWD
Converter Diode
Characteristics
min.
typ.
max.
-
0.58
0.75
0.90
Contact thermal resistance
Rth(c-f)
with Thermal Compound
0.05
(1device) (*4)
(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.
3
-
Units
o
C/W
FM6M1623
2015/08
7MBR75VJC120-50
IGBT Modules
[ Inverter / Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
[ Inverter / Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
Tj= 150oC / chip
150
150
15V
Collector current: IC [A]
VGE=20V
12V
100
75
15V
125
Collector current: IC [A]
VGE=20V
125
10V
50
12V
100
75
10V
50
25
25
8V
8V
0
0
0
1
2
3
4
5
0
Collector-Emitter voltage: VCE[V]
3
4
5
[ Inverter / Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.
Tj= 25oC / chip
8
Collector - Emitter voltage: VCE [V]
150
Tj=150oC
125
Tj=25oC
100
Tj=125oC
75
50
25
0
6
4
Ic=150A
2
Ic=75A
Ic=38A
0
1
2
3
4
5
5
10
Collector-Emitter voltage: VCE[V]
15
20
25
Gate - Emitter voltage: VGE [V]
[ Inverter / Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
[ Inverter / Brake ]
Dynamic gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25oC
Vcc=600V , Ic=75A , Tj=25oC
20
100
800
15
600
10
Gate-Emitter voltage: VGE [V]
VCE
Cies
1
Cres
Coes
0.1
0.01
0
10
20
10
400
5
200
0
0
-5
-10
Collector - Emitter voltage: VCE [V]
-400
VGE
-15
-20
-600
30
-200
-600
Collector-Emitter voltage: VCE [V]
0
Capacitance: Cies, Coes, Cres [nF]
2
Collector-Emitter voltage: VCE[V]
[ Inverter / Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Collector current: IC [A]
1
-800
-400
-200
0
200
400
600
Gate charge: Qg [nC]
4
FM6M1623
2015/08
7MBR75VJC120-50
IGBT Modules
[ Inverter ]
Switching time vs. Collector current (typ.)
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V，VGE=±15V，Rg=2Ω，Tj= 125oC
Vcc=600V，VGE=±15V，Rg=2Ω，Tj= 150oC
10000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
toff
1000
ton
tr
100
tf
10
0
25
toff
1000
50
75
100
125
150
ton
tr
100
tf
10
175
0
25
Collector　current :Ic [A]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
1000
toff
ton
tr
tf
10
1.0
10.0
20
125
150
175
Eon(150oC)
Eon(125oC)
15
Eoff(150oC)
Eoff(125oC)
10
Err(150oC)
Err(125oC)
5
0
0
100.0
25
50
75
100
125
150
175
200
Collector　current :Ic [A]
Gate Resistance :Rg [Ω]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=±15V
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, Rg >= 2Ω ,Tj = 150°C
12
200
Eon(150oC)
10
Eon(125oC)
8
Eoff(150oC)
Eoff(125oC)
175
Collector current: IC [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
100
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V，VGE=±15V，Rg=2Ω
Vcc=600V，Ic=75A，VGE=±15V，Tj= 125oC
0.1
75
Collector　current :Ic [A]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
100
50
150
6
125
100
Err(150oC)
Err(125oC)
4
2
RBSOA
(Repetitive pulse)
75
50
25
0
0
1
10
100
0
400
800
1200
Collector-Emitter voltage : VCE [V]
Gate Resistance :Rg [Ω]
(Main terminals)
5
FM6M1623
2015/08
7MBR75VJC120-50
IGBT Modules
[ Inverter / Brake ]
Forward current vs. forward on voltage (typ.)
chip
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=600V，VGE=±15V，Rg=2Ω
150
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
1000
Tj=25oC
Tj=150oC
Forward current : IF [A]
125
Tj=125oC
100
75
50
25
0
trr(150oC)
trr(125ooC)
Irr(150 C)
Irr(125oC)
100
10
0
1
2
3
4
5
0
25
50
Forward on voltage : VF [V]
75
100
125
150
175
200
Forward current : IF [A]
[ Converter ]
Forward current vs. forward on voltage (typ.)
chip
150
Forward current : IF [A]
125
100
75
50
Tj=25oC
Tj=150oC
25
0
0.0
0.5
1.0
1.5
2.0
2.5
Forward on voltage : VFM [V]
[ Temperature Sensor ]
Temperature characteristic(typ.)
Transient thermal resistance (typ.)
2500




2250
2000
FWD[Inverter]
Conv. Diode
1
IGBT[Inverter / Brake]
0.1
n
0.01
0.001
1
2
3
[sec]
0.0001
0.0021
0.0133
0.1247
rn
IGBT
0.03736
0.05821
0.42066
0.06377
[ oC/W]
FWD
0.04832
0.07527
0.54396
0.08245
Conv
0.05798
0.09032
0.65275
0.09895
0.100
1750
1500
1250
1000
750
4
τn
0.010
Resistance［Ω］
t
−

Zth = ∑ rn ⋅ 1 − e τ n

n =1

4
o
Thermal resistanse : Rth(j-c)[ C/W]
10
500
250
0
-50 -25
1.000
0
25
50
75
100 125 150 175
Temperature［oC］
Pulse width : Pw[sec]
6
FM6M1623
2015/08
7MBR75VJC120-50
IGBT Modules
Warnings
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of 8/2015.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed
in this Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license,
either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric
Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or
implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the
use of the applications described herein.
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products
may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate
safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become
faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
･Computers ･OA equipment ･Communications equipment (terminal devices) ･Measurement equipment
･Machine tools ･Audiovisual equipment ･Electrical home appliances ･Personal equipment ･Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment
listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such
equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
･Transportation equipment (mounted on cars and ships) ･Trunk communications equipment
･Traffic-signal control equipment ･Gas leakage detectors with an auto-shut-off feature
･Emergency equipment for responding to disasters and anti-burglary devices ･Safety devices ･Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to
strategic equipment (without limitation).
･Space equipment ･Aeronautic equipment ･Nuclear control equipment ･Submarine repeater equipment
7. Copyright (c)1996-2015 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the
product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
7
FM6M1623
2015/08
Technical Information
IGBT Modules
Please refer to URLs below for futher information about products, application manuals and technical documents.
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FUJI ELECTRIC Power Semiconductor WEB site
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Information
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ThinkCentre E73z (type 10BD, 10BL)