トンネルスピンゼーベック効果を用いた Cr2O3/LiNbO3/Cr2O3 積層膜

Cr2O3/LiNbO3/Cr2O3
)
(ME)
ME
Cr2O3/LiNbO3/Cr2O3
tunneling
tunnel
RF magnetron sputtering
o
100 W
490 C
nm
Cr2O3, LiNbO3
Ar:O2 = 32:1, 8:1
Cr2O3/LiNbO3/Cr2O3
1.3 Pa
RF-power
LiNbO3
60,
5, 10, 15
(111) Nb:SrTiO3
(VSM)
LCR
VSM
Fig.1
LiNbO3
15 nm
Fowler-Nordheim (FN) Tunneling
tunneling
LiNbO3
2
Fig.2
Cr2O3
2
Cr2O3
1.5 oC
tunnel
5 oC
0.02 V
2
10
Fig.1
Cr2O3
0.834
0.833
0.832
0.831
0
50 100 150 200
Magnetic field (Oe)
Fig.1 Applied Magnetic fields
dependence of FN tunneling voltage
FN tunneling voltage (V)
FN tunneling voltage (V)
2 oC
0.83
0 Oe
0.82
0.81
0
2
4
6
Temperature gradient (oC)
Fig.2 Relationship between the FN tunneling
voltage and temperature gradient in the sample