垂直磁化型磁気トンネル接合素子に向けた
bcc 型反強磁性薄膜の開発
169
!25"5/*7# "'5)<;@1 垂直磁化型磁気トンネル接合素子に向けた
bcc 型反強磁性薄膜の開発
İ Ñ ¬ƅ ＊　＊
白　土　優
Bcc-based antiferromagnetic thin film
toward perpendicularly magnetized tunnel junctions
ƅ
Bcc-based antiferromagnetic thin film toward
perpendicularly
magnetized tunnel junctions
Yu Shiratsuchi
*
*
Shiratsuchiand high integration spintronic devices, we
Toward the development of low powerYuconsumption
investigated the bcc-based antiferromagnetic thin film. In this scholarship, we focused on the Cr3Al(001)
thin film possessing the X-phase. Based on the characteristics of the X-phase; the electrical resistivity and
Toward the development of spintronic devices with low power consumption and high integration, we
the X-ray diffraction, the formation of the X-phase was investigated for the several growth temperatures.
investigated the bcc-based antiferromagnetic thin film. In this scholarship, we focused on the Cr3Al(001)
When the growth temperature was below 673 K, the characteristics of the X-phase were observed. For the
thin film possessing the X-phase. Based on the characteristics of the X-phase; the electrical resistivity
growth temperatures of 773 K and 873 K, the C11b phase was detected by the X-ray diffraction. By using
and the lattice spacing, the formation of the X-phase was investigated for the several growth temperatures. the synchrotron X-ray radiation measurements, it was revealed that the X-phase grown at 573 K was single
When the growth temperature was below 673 K, the characteristics of the X-phase were observed. For
crystalline and the lattice parameter and the axial angle were similar to those of the bulk value.
the growth temperatures of 773 K and 873 K, the C11b phase was detected by the X-ray diffraction. By
using the synchrotron X-ray radiation measurements, it was revealed that the X-phase grown at 573 K was
single crystalline and the lattice parameter and the axial angle were similar to those of the bulk value.
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*豊田理研スカラー
（大阪大学大学院工学研究科マテリアル生産科学専攻）
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30
45
60
75
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(b)
0.4
1600
1400
0.0
1200
-0.4
1000
-0.8
800
600
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dρ/dT at 80 K
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bcc-based index
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る
170
400
-1.6
200
0
300
400
500
600
700
800
-2.0
900
Growth Temperature / K
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