アボガドロ定数決定のための単結晶シリコンの結晶評価

http://www.nmij.jp
2012S2-004
I.
(SI
IAC project
XRCD
XRCD
Si
28Si
M
X
NA
ρ
d220
KEK-PF
M ρ
NA =
3
8d 220
II.
4.R1
9.R1
9.R1
XINT
9.R1
4.R1
X
KEK-PF
[1]
Defect
NRLM3 NRLM4
Carbon (x1015)
5.6(9)
Oxygen (x1015) 2.0(2)
Boron (x1015)
0.3(10)
Avo28 4.7.1 XINT
Avo28 9.7.1
(seed)
(center) (tail)
0.182(83)
1.07(10) 2.990(196)
6.4(1)
0.196(23)
0.37(3)
0.0196(17)
0.004(1) 0.344(28)
0.33(10)
0.33(10) 0.33(10)
<0.0083
Vacancy (x1015)
Δd/d distribution 5 x 10-8
(p-v)
2.5 x 10-8 1.5 x 10-8
(4.R1)
0.440(38)
2 x 10-8 4 x 10-8
(9.R1)
9.R1
IV.
2015
V.
2014
CGPM
Be
MDCM
3×10-9
10 %
2011
III.
28 Si
4.R1
1
24 CGPM
h
e
NA
k
Avo28
X
Δd/d
4.R1
2x10-8
SI
X
4.R1
XINT
1.5x10-8 XINT
2018
26
BIPM
CGPM
NMI
CODATA2014
[3]
9.R1
Si
Δd/d
[2]
9.R1
VI.
4x10-8
4.R1
XINT
[1] H. Fujimoto, A. Waseda and X. W. Zhang, Metrologia 48, S55 (2011).
[2] A. Waseda, H. Fujimoto, X. W. Zhang, N. Kuramoto and K. Fujii, IEEE
Trans. Instrum. Meas, to be published.
[3] Y. Azuma et al., Metrologia, to be published.

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