ḟୡ௦༙ᑟయ䝎䜲䝲䝰䞁䝗䝕䝞䜲䝇ᇶ♏◊✲ Keyword : ⷧ⭷䚸༙ᑟయ䚸pn᥋ྜ䚸䝎䜲䝲䝰䞁䝗 ⊂❧⾜ᨻἲே㻌 ≀㉁䞉ᮦᩱ◊✲ᶵᵓ ᄂᆮỉ Ꮡ 䝎䜲䝲䝰䞁䝗䛿䝽䜲䝗䜼䝱䝑䝥༙ᑟయᮦᩱ䛸䛧䛶῝⣸እ⥺䜸䝥䝖䜶䝺䜽䝖䝻䝙䜽䝇䚸䝟䝽䞊䝕䝞 䜲䝇➼䜈䛾ᛂ⏝䛜ᮇᚅ䛥䜜䛶䛔䜎䛩䚹NIMS䝎䜲䝲䝰䞁䝗◊✲䜾䝹䞊䝥䛿1980ᖺ௦䛻䝎䜲䝲 䝰䞁䝗Ẽ┦ᡂ㛗ᢏ⾡䜢䚸1990ᖺ௦䛻nᆺ༙ᑟయᢏ⾡䜢☜❧䛧䚸䛥䜙䛻21ୡ⣖䛻ධ䜚pn᥋ ྜ䛾ᙧᡂ䛻ᡂຌ䛧䜎䛧䛯䚹䛶ୡ⏺ึ䛾ᢏ⾡䛷䛒䜚䚸᪥ᮏ䛜䜛ୡ⏺ⓗ◊✲ᡂᯝ䛷䛩䚹 ᄂᆮỉ ཀྵẟ 䝎䜲䝲䝰䞁䝗䛾5.5eV䛸䛔䛖䛝䛺䝞䞁䝗䜼䝱䝑䝥䚸䛭䛾⾲㠃䛜ᣢ䛴㈇ᛶ㟁Ꮚぶຊ䛸䛔䛖≉ ␗䛺ᛶ㉁䛜ᵝ䚻䛺≉ᛶ䜢⏕䜏ฟ䛩ྍ⬟ᛶ䜢ᣢ䛳䛶䛔䜎䛩䚹䝗䞊䝢䞁䜾ไᚚ䚸ᡂ㛗ไᚚ䛾 䛥䛛䜙䛣䛾ᛶ㉁䜢⏕䛛䛧䛯ᛂ⏝䛜ᅔ㞴䛷䛧䛯䚹䝅䝸䝁䞁୪䜏䛾⣧≀ไᚚ䚸⤖ᬗᛶ ไᚚᢏ⾡䛾☜❧䜢┠ᣦ䛧䚸䛂䛘䜛䛃䝎䜲䝲䝰䞁䝗ᮦᩱ䜢┠ᣦ䛧䜎䛩䚹 இέᇢᄂᆮἚἦἕἁἋ ⾨ᫍ䛻ᦚ㍕䛥䜜䜛pin᥋ྜ䝉䞁䝃䞊 pn᥋ྜ῝⣸እ⥺䠄235nm䠅LED Energy [eV] 8 10 7 5.0 4.0 3.0 Free exciton FETO (5.27 eV) FETO+O (5.10 eV) A band Diamond LED 4.5 eV band 200 250 300 350 400 450 500 550 Wavelength [nm] 235nm䛾ᙉ䛔῝⣸እ⥺Ⓨග 䝎䜲䝲䝰䞁䝗pn᥋ྜ῝⣸እLED䛾Ⓨග䝇䝨䜽䝖䝹 pn᥋ྜᆺ෭㝜ᴟ䠄NEA䜶䝭䝑䝍䞊䠅 ᥋ྜᆺ෭㝜ᴟ䛾ືసཎ⌮ n-type e- 䝎䜲䝲䝰䞁䝗䜶䝭䝑䝍䞊䛛䜙䛾ᨺฟ㟁Ꮚീ p-type e- Vacuum ee- e- e- electron emission VD Photon energy [eV] 98 7 6 5 4 3 -1 10 -2 Band-edge 10 -3 10 4 3x10 -4 10 5 -5 3x10 10 -6 10 -7 10 -8 10 -9 10 200 300 400 Wavelength [nm] PROBA-IIᐇ㦂⾨ᫍ SQ SLQ ඃ䜜䛯⣸እ⥺ឤᗘ䛸 䝋䞊䝷䞊䝤䝷䜲䞁䝗䝛䝇 500 1E-3 1 2 10 5 CL spectrum of n-type layer at RT 1E-6 1E-3 1E-9 1E-6 1E-12 recombination NEA surface Diamond NEA emitter ૨ᴾ ྂᴾ 100 Pm Metal contact p-type diamond surface on on mesa mesa (pn junction diode) Current density (A/cm ) 6 Emission current Ic, Diode current Id (A) 10 Responsivity [A/W] Intensity [arbitrary unit] 6.0 10 -80 1E-9 -60 -40 -20 0 20 Diode voltage Vd (V) 䝎䜲䝲䝰䞁䝗pn᥋ྜ䝎䜲䜸䞊䝗㡰᪉ྥືస䠄㉥䝥䝻䝑䝖䠅 䛻క䛖㟁Ꮚᨺฟ䠄㟷䝥䝻䝑䝖䠅 Æ 㧗䛔㟁Ꮚᨺฟຠ⋡䠄Ie/Id䠅䠖1.5䠂 㻌 㻌I-N. Lin, S. Koizumi, et.al.,” Diamond electron emission” MRS Bulletin 39 (6), 533-541 (2014). 㻌 ᑠἨ㻌 ⪽䚸䇾n ᆺ䝎䜲䝲䝰䞁䝗䛾ᡂ䛸䝞䞁䝗䜶䞁䝆䝙䜰䝸䞁䜾䇿 䠄➨6❶➨1⠇䚸pp.267~282䠅䚸䝫䝇 䝖䝅䝸䝁䞁༙ᑟయ䚸䠄ᰴᘧ♫䜶䝚䞉䝔䜱䞊䞉䜶䝇䚸ᮾி䚸2013䠅ISBN 978-4-86469-059-1 㻌 S. Koizumi and T. Makino, ” nType Diamond Growth and Homoepitaxial Diamond Junction Devices”, Optical Engineering of Diamond, (WILEY-VCH, Germany, 2013). LJƱNJ ܱဇ҄ƷႸ z nᆺ䝗䞊䝢䞁䜾䛾㧗ᗘ䛻䜘䜚✀䚻䛾䝎䜲䝲䝰䞁䝗䝕 䝞䜲䝇ᙧᡂ䛻ᡂຌ z ᴟ㝈⎔ቃ༙ᑟయ䝉䞁䝃䠄㧗 ⎔ቃ䚸ᨺᑕ⥺䠅 z ῝⣸እ⥺LED z ✲ᴟ䛾䝟䝽䞊䝕䝞䜲䝇༙ᑟయᮦᩱ䛸䛧䛶䛾䝎䜲䝲䝰 z 䝟䝽䜶䝺䝕䝞䜲䝇 䞁䝗Ẽ┦ᡂ㛗ᢏ⾡䜢᥈ồ z ᶒ≉チ䠖7௳ ග䞉㟁Ꮚᮦᩱ䝴䝙䝑䝖㻌 䝽䜲䝗䜼䝱䝑䝥ᶵ⬟ᮦᩱ䜾䝹䞊䝥㻌 ᑠἨ㻌 ⪽ E-mail : KOIZUMI.Satoshi䖃nims.go.jp㻌 㻌 㻌 㻌 㻌 㻌 㻌 — 150 —
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