Evaluation of optical properties using
spectroscopic ellipsometry
1. Features
Spectroscopic ellipsometry (SE) provides dielectric
constants (refractive index) and film thicknesses.
Detector
Features of our facility:
- Wavelength regions (193 nm to 1700 nm)
- Minimum beam diameter 500 mmf
Usually, about 2 to 3 mmf
- Equipped with the 300mm wafer stage
- Depth profile and anisotropy analysis
Lamp
300 mm R-q
Stage
2. Mapping measurement example of SiO 2 film on Si wafer
Refractive index
(590nm)
( cm)
( cm)
Film thickness
(nm)
( cm)
( cm)
Film thickness distribution
Refractive index distribution
300mm size uniformity of thickness and optical constant can be obtained.
3. Evaluation of Optical Constant and Absorption Coefficient
Refractive index(n)
3.0
k
k
k
k
SiO
酸化膜
(TEOS)
2 (TEOS)
SiO
窒化膜
(スパッタ)
2 (Sputtering)
SiN
(Plasma
CVD) CVD)
窒化膜
(プラズマ
TiO
TiO22膜
2.0
2.5
1.5
2.0
1.5
1.0
1.0
0.5
0.5
0.0
. 0.0
0
200
400
600
800
1000 1200 1400 1600 1800
Wavelength (nm)
8.0x105
2.5
Absorption coefficient(/cm)
n
n
n
n
Extinction coefficient(k)
3.5
SiN (Sputtering
CVD)
窒化膜
(スパッタ)
窒化膜
(プラズマ
SiN (Plasma
CVD) CVD)
TiO22膜
TiO
6.0x105
4.0x105
2.0x105
0.0
0
200
400
600
800
1000 1200 1400 1600 1800
Wavelength (nm)
The refractive index and extinction coefficients of wide wavelength range
(from 193nm to 1680nm) can be evaluated.
Toray Research Center, Inc.
P01107構造化学第１研究室20131105
STC：開(20141121)

ODC-DC002B FOL14xx series with FBG Datasheet

Folie 1