Ｏｒｉｇｉｎ‘ｓ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｄｅｖｉｃｅｓ ＵＳＲ３０Ｐ６ （６００Ｖ/３０Ａ） Ｕｌｔｒａ Ｆａｓｔ ａｎｄ Ｓｏｆｔ Ｒｅｃｏｖｅｒｙ Ｄｉｏｄｅ ＵＳＲ３０Ｐ６ Features ● Outline Drawing Unit : mm ・ High speed recovery time (less than 100ns). φ3.2±0.2 ・ Ultra soft recovery. 4.5 5±0.3 16 MAX ④ ・ Low forward voltage drop. ● Applications 4.0 ・ High frequency switched mode power supplies. 1.5 15±0.2 ● ・ Block diode (reverse current) as flywheel. 2.8 20±0.5 ・ Power factor and harmonic correction (snubber circuit) ● Structures 1 0.6 25.45±0.5 ・ Resin molded and Silicon epitaxial planar diode. ① ② ③ ・ TO-3P Package ④ ・ Weight : 5.2g ・ Terminal plating : Sn ・ Conforms to RoHS regulations ① ● ② ③ Absolute Maximum Ratings （Ta=25℃） Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage Items VRM − 600 V Average Rectified Forward Current IO Tc=90℃, Half sin wave, Resistive Load 30 A Peak Forward Surge Current IFSM Tj=25℃, 50Hz,Single-phase, Half sin wave, Non-Repetitive 300 A Tj − -40∼+150 ℃ Storage Temperature Tstg − -40∼+150 ℃ Mounting Torque TOR − 0.8 N・m Operating Junction Temperature ● Electrical Characteristics （Tj=25℃） Items Symbol Conditions TYP. MAX. Unit Forward Voltage Drop VＦ ＩＦ=30A − 1.5 V Reverse Current ＩR ＶＲ=600V − 200 μA Reverse Recovery Time ｔｒｒ ＩＦ=30A, dif/dt=-300/μs − 100 Ns ＳＦ ＩＦ=30A, dif/dt=-300/μs 0.8 − - Junction to Case − 1.0 ℃/W Softness Factor （※） Terminal resistance Rth(j-c) (※)Definition of Softness Factor ｔｒｒ ＩＦ ｔａ ｄｉｆ／ｄｔ ｔｂ ソフトネスファクタ＝ ｔａ Softness Factor ｔｂ ＩＲＲＭ ０.５ Ｉ ＲＲＭ ｄｉｒ／ｄｔ ０.７５ ＩＲＲＭ 1 ｄｉｒ／ｄｔ≒ ＩＲＰＭ ｔｂ ｄｉｆ／ｄｔ×ｔａ ｄｉｆ／ｄｔ ＝ ＝ ｔｂ ＳＦ OSES2137_PD-06/2010 Ｏｒｉｇｉｎ‘ｓ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｄｅｖｉｃｅｓ ＵＳＲ３０Ｐ６ （６００Ｖ/３０Ａ） ● Characteristics Diagrams 最大値(Maximum) 代表値(Typical) 103 100 逆電流 Reverse Current ＩＲ［μＡ］ 順電流 Forward Current ＩＦ［Ａ］ 102 Ｔｊ＝１５０℃ 10 Ｔｊ＝２５℃ Ｔｊ＝１５０℃ 101 100 Ｔｊ＝７５℃ 10-1 Ｔｊ＝２５℃ 10-2 パルス測定 Pulse measurement パルス測定 Pulse measurement -3 1 10 0 0.5 1 1.5 2 0 2.5 順電圧 Forward Voltage ＶＦ［Ｖ］ 200 400 600 800 逆電圧 Reverse Voltage ＶＲ［Ｖ］ FORWARD CHARACTERISTICS REVERSE CHARACTERISTICS 平均整流電流 Average Rectified Forward Current ＩＯ［Ａ］ 40 30 20 10 0 0 50 100 150 200 ケース温度 Case Temperature ＴＣ［℃］ DERATING CURVE 2 OSES2137_PD-06/2010
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