強磁性半導体のMCD(協力研究) 藤森 淳 ・ 2003A報告 Zn1-xCoxO, Zn1-xVxO, Ga1-xMnxN ・ 2004A予定 Zn1-xCoxO, Zn1-xVxO, Zn1-xCrxTe 2000A報告 Zn1-xCoxO、 Zn1-xVxO • 80 K, 2 TににおけるMCDの測定 ⇒全体(~常磁性成分)のXASと強磁性成分のMCD ⇒強磁性Co、Vの価数、スピン状態、結晶場の決定 Ga1-xMnxN • 80 K, 2 TににおけるMCDの測定 ⇒常磁性成分のXAS、MCD ⇒Mn2+の価数、スピン状態の確認 High-temperature ferromagnetism in Zn1-xCoxO Reduction -> n-type doping -> ferromagnetism TC ~ 300 K ! small moment K. Ueda, H. Tabata, T. Kawai, APL. ‘01 Co 2p core-level XAS and MCD of Zn1-xCoxO Co2+ MCD intensity ~several % of total Co ions magnetic impurities such as spinel ? M. Kobayashi et al. Co 2p core-level MCD of Zn1-xCoxO Calc: Mobs/Mspin = 0.56 Calc: Mobs/Mspin = 0.21 Expt: Mobs/Mspin = 0.28 V 3d t2 e 10Dq < 0 10Dq > 0 e Td symmetry ? t2 Oh symmetry ? e.g. spinel M. Kobayashi et al. A. Tanaka High-temperature ferromagnetism in Zn1-xVxO Reduction -> n-type doping -> ferromagnetism TC >> 300 K ! small moment H. Saeki, H. Tabata, T. Kawai, Solid St. Commun. ‘01 V 2p core-level XAS and MCD of Zn1-xVxO 0.6 - (-2 Tesla) Zn0.95V0.05O T = 20 K + (+2 Tesla) 20 0.2 V2+ + V L2 V L3 - 10 0 0 -3 +/- 30 - x10 (10-3) (arb. units) 0.4 MCD intensity ~several % of total V ions -0.2 + - - (MCD) -10 -0.4 510 515 520 525 magnetic impurities ? 530 Photon energy (eV) Y. Ishida et al. V 2p core-level MCD of Zn1-xVxO V3+(d2) 10Dq = +0.7 eV V2+(d3) 10Dq = +0.7 eV V3+(d2) 10Dq = -0.7 eV, D = +0.1 eV V2+(d3) 10Dq = -0.7 eV, D = -0.1 eV V2+(d3) 10Dq = -0.7 eV, D = +0.1 eV Expt. e V 3d 10Dq > 0 t2 Oh symmetry ? e.g. spinel t2 ep D > 0 or 10Dq < 0 a1 a1 D<0 ep ? ? e Td symmetry Uniaxial distortion 10Dq = -0.7 eV Y. Ishida et al. A. Tanaka 2000A報告 Zn1-xCoxO、 Zn1-xVxO • 80 K, 2 TににおけるMCDの測定 ⇒全体(~常磁性成分)のXASと強磁性成分のMCD ⇒強磁性Co、Vの価数、スピン状態、結晶場の決定 Ga1-xMnxN • 80 K, 2 TににおけるMCDの測定 ⇒常磁性成分のXAS、MCD ⇒Mn2+の価数、スピン状態の確認 Mn 2p core-level XAS and MCD of Ga1-xMnxN morb ~ 0.0 B/atom (d5) mspin ~ 0.14 B/atom ~ 3 % magnetization 2 T, 80 K x T. Kondo et al. Zn1-xCoxO、 Zn1-xVxO予定 • 低温・強磁場から高温・低磁場におけるMCDの測定 ⇒強磁性成分MCDと常磁性成分MCDの分離 Magnetization ( B/Co) – 測定温度=30, 60,120,240 K ? 0.6 [email protected]_ZFC [email protected]_FC 0.5 M at 80K, 2T ~ 0.35 (B/Co) 0.4 0.3 0.2 0.1 0 0 100 200 300 Temperature (K) Zn1-xCrxTe予定 H. Saito et al., PRL 90, 207202 (2003) • XAS, MCDの測定 ⇒Crの価数、結晶場、スピン状態の決定 強磁性成分MCDと常磁性成分MCDの分離
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