2SC2655L

UNISONIC TECHNOLOGIES CO., LTD
2SC2655
NPN SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS POWER
SWITCHING APPLICATIONS
„
FEATURES
* Low saturation voltage:
VCE(SAT)= 0.5V (Max.)
* High speed switching time: TSTG=1.0μs (Typ.)
„
ORDERING INFORMATION
Ordering Number
Lead Free
2SC2655L-x-AE3-R
2SC2655L-x-T9N-B
2SC2655L-x-T9N-K
2SC2655L-x-T9N-R
„
Halogen Free
2SC2655G-x-AE3-R
2SC2655G-x-T9N-B
2SC2655G-x-T9N-K
2SC2655G-x-T9N-R
Package
SOT-23
TO-92NL
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
B
C
E
C
B
E
C
B
E
C
B
Packing
Tape Reel
Tape Box
Bulk
Tape Reel
MARKING (FOR SOT-23 PACKAGE)
www.unisonic.com.tw
Copyright © 2011Unisonic Technologies Co., Ltd
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2SC2655
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( TA=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
2
A
Collector Current (Pulse) (Note 1)
ICP
3
A
Base Current
IB
0.5
A
SOT-23
350
Collector Power Dissipation
Pc
mW
TO-92NL
900
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. PW≦16ms, Duty Cycle≦50%.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS(TA=25°C, unless otherwise specified)
PARAMETER
Collector Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
TEST CONDITIONS
IC= 10mA, IB= 0
VCB=50V, IE= 0
VEB= 5V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=1.5A
IC=1A, IB=0.05A
IC=1A, IB=0.05A
VCE=2V, IC=0.5A
VCB= 10V, IE= 0, f=1MHz
MIN
50
TYP
MAX
1.0
1.0
240
70
40
0.5
1.2
UNIT
V
μA
μA
100
30
V
V
MHz
pF
0.1
μS
10Ω
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
BVCEO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(SAT)
VBE(SAT)
fT
COB
Switching Time(Turn-on Time)
tON
IB1= -IB2=0.05A
DUTY CYCLE≦1%
„
CLASSIFICATION OF hFE(1)
RANK
RANGE
O
70-140
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Y
120-240
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„
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
VCE-Ic
Ic-VCE
2.4
25 20
2.0
18
15
Common Emitter
TA=25°С
1
0.8
12
1.6
8
6
1.2
0.8
2
4
0
6
10
8
12 14
Collector -Emitter Voltage, VcE(V)
0
30
40
0.4
0.8
1
0.8
0.8
0.4
0
Common Emitter
TA=100°С
0.4
0.8
1.2
1.6
Common EmitterTA= -55°С
10
20
2.4
2.0
0
0
40
50
0.4
0.8
1.2
2.4
2.0
VCE(SAT) -Ic
1000
1
Common Emitter
VCE=2V
TA=25°С
1.6
Collector Current, Ic (A)
hFE -Ic
500
30
0.2
Collector Current, Ic (A)
300
2.4
2.0
0.4
30
40
0
IB=5mA
0.6
20
10
0.2
1.6
VCE-Ic
VCE-Ic
IB=5mA
1.2
Collector Current, Ic (A)
1
0.6
Common
Emitter
TA=25°С
20
10
0.2
IB=2mA
0
IB=5mA
0.4
4
0.4
0
0.6
10
TA=100°С
Common Emitter
Ic/IB=20
0.5
0.3
100
0.1
TA=100°С
TA=-55°С
50
0.05
30
TA=25°С
TA=-55°С
10
0.01
0.03
0.1
0.3
1
Collector Current, Ic (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0.02
0.01
0.03 0.05 0.1
0.3 0.5
1
Collector Current, Ic (A)
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S)
U
O
Ic INU
N
O
(C
Collector Power Dissipation, Pc (mW)
.
AX
M
Collector Current-Ic(mA)
Collector Current, Ic (A)
Base Emitter Saturation
Voltage, VBE(SAT)
TYPICAL CHARACTERISTICS(Cont.)
Collector Current, Ic(A)
„
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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