AT45DB021D and AT45DB021E Comparison Adesto Field Application http://www.adestotech.com/ Victor Lim [email protected] 1 AT45DB021D and AT45DB021E Comparison Content: Features Highlight for AT45DB021E Features not recommended for new design AT45DB021E Command Set Summary Power performance comparison Program / Erase Time comparison Feature description 2-byte Status Register Enter and exit Ultra-Deep Power Down Freeze Sector Lockdown Buffer and Page size reconfiguration Software Reset Low Power Read Mode 2 AT45DB021E Feature Highlight AT45DB021E is designed to replace the AT45DB021D in the 8 pin packages. While it maintains the fine granular structure, it also introduces a few new features. Improved Deep Power Down mode – 4.5μA (typical) Ultra-Deep Power Down mode – 200nA Low Power Read mode (01h command) User configurable and re-configurable page size (256bytes or 264bytes) Wider operating voltage range: 1.65V – 3.6V Allows Software Reset Now with 5 Bytes Device ID 3 AT45DB021E Feature Highlight AT45DB021D AT45DB021E New New New New New 4 AT45DB021E Features not recommended for new design These commands are supported, but recommended not to use in new design Commands AT45DB021D AT45DB021E Buffer Read Main Memory Page Read Continuous Array Read Status Register Read Continuous Array Read (Legacy Command – Not Recommended for New Designs) 54H 52H 68H 57H E8H 54H 52H 68H 57H E8h 5 AT45DB021E Command Set Comparison Commands AT45DB021D AT45DB021E Buffer Read (High Frequency) Buffer Read (Low Frequency) Continuous Array Read (High Frequency) Continuous Array Read (Legacy Command – Not Recommended for New Designs) Continuous Array Read (Low Frequency) Continuous Array Read (Low Power Mode) Main Memory Page Read D4H D1H 0BH E8H 03H D4h D1h 0Bh E8h 03h 01h D2h Block Erase Buffer to Main Memory Page Program with Built-In Erase Buffer to Main Memory Page Program without Built-In Erase Buffer Write Chip Erase Main Memory Byte/Page Program through Buffer without Built-In Erase Main Memory Page Program through Buffer with Built-In Erase Page Erase Sector Erase 50H 83H 88H 84H C7H, 94H, 80H, 9AH D2H 82H 81H 7CH 50h 83h 88h 84h C7h + 94h + 80h + 9Ah 02h 82h 81h 7Ch New New 6 AT45DB021E Command Set Comparison Commands AT45DB021D Enable Sector Protection Disable Sector Protection Erase Sector Protection Register Program Sector Protection Register Read Sector Protection Register Sector Lockdown Read Sector Lockdown Register Freeze Sector Lockdown Program Security Register Read Security Register 3DH + 2AH + 7FH + A9H 3DH + 2AH + 7FH + 9AH 3DH + 2AH + 7FH + CFH 3DH + 2AH + 7FH + FCH 32H 3DH + 2AH + 7FH + 30H 35H Main Memory Page to Buffer Transfer Main Memory Page to Buffer Compare Auto Page Rewrite through Buffer Deep Power-Down Resume from Deep Power-Down Ultra-Deep Power-Down Status Register Read Configure “Power of 2” (Binary) Page Size Configure Standard DataFlash Page Size Software Reset 53H 60H 58H B9H ABH AT45DB021E 3Dh + 2Ah + 7Fh + A9h 3Dh + 2Ah + 7Fh + 9Ah 3Dh + 2Ah + 7Fh + CFh 3Dh + 2Ah + 7Fh + FCh 32h 3Dh + 2Ah + 7Fh + 30h 35h 34h + 55h + AAh + 40h 9BH + 00H + 00H + 00H 9Bh + 00h + 00h + 00h 77H 77h 53h 60h 58h B9h ABh 79h D7H D7h 3Dh + 2Ah + 80h + A6h 3Dh + 2Ah + 80h + A6h 3Dh + 2Ah + 80h + A7h F0h + 00h + 00h + 00h New New New New 7 AT45DB021E Command Set Comparison AT45DB021E New 5-byte Manufacturer ID Commands AT45DB021D AT45DB021E Manufacturer and Device ID Read Manufacturer ID Device ID (Byte 1) Device ID (Byte 2) [Optional to Read] Extended Device Information (EDI) String Length [Optional to Read] EDI Byte 1 9FH 9Fh 1Fh 23h 00h 00h 1Fh 23h 00h 01h 00h New These commands are supported, but recommended not to use in new design Commands AT45DB021D AT45DB021E Buffer Read Main Memory Page Read Continuous Array Read Status Register Read Continuous Array Read (Legacy Command – Not Recommended for New Designs) 54H 52H 68H 57H E8H 54H 52H 68H 57H E8h 8 AT45DB021D and AT45DB021E – Power performance AT45DB021D AT45DB021E Improved Improved Improved Improved Improved 9 AT45DB021D and AT45DB021E – Program / Erase Time AT45DB021D Program / Erase Time AT45DB021E Program / Erase Time Improved Improved New Improved Improved Improved 10 AT45DB021E – New 2-byte Status Register 2nd Byte New No change on the first byte 11 AT45DB021E - Ultra-Deep Power Down New Market Leading Ultra-Deep Power Down • 200nA (typ) • 1μA (max) 12 AT45DB021E - Exit Ultra-Deep Power Down New 13 AT45DB021E – Freeze Sector Lockdown New 14 AT45DB021E – page size re-configuration New User can reconfigure as needed 15 AT45DB021E – Software Reset New 16 AT45DB021E – Low Power Read Mode New Lower Read Current: Command 01h: 6mA typ at 1MHz 7mA typ at 15MHz 17 AT45DB021E – Samples and Datasheet DataFlash® Datasheet: http://www.adestotech.com/products/serial-flash/dataflash DataFlash® Sample Request: http://www.adestotech.com/sample-ordering-information 18
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